Si4896DY Vishay Siliconix

N-Channel 80-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY VDS (V) 80

RDS(on) (Ω)

ID (A)

0.0165 at VGS = 10 V

9.5

0.022 at VGS = 6.0 V

8.3

• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

D

SO-8 S

1

8

D

S

2

7

D

S

3

6

D

G

4

5

D

G

Top View

S

Ordering Information: Si4896DY-T1-E3 (Lead (Pb)-free) Si4896DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter

Symbol

10 s

Steady State

Drain-Source Voltage

VDS

80

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)a

TA = 25 °C TA = 70 °C

Pulsed Drain Current Avalanche Current

L = 0.1 mH

Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa

ID

TA = 25 °C TA = 70 °C

9.5

5.4

IAS

40

A

2.8

1.4

3.1

1.56

2.0

1.0

TJ, Tstg

Operating Junction and Storage Temperature Range

6.7 50

PD

V

7.6

IDM IS

Unit

- 55 to 150

W °C

THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)

Symbol t ≤ 10 s Steady State Steady State

RthJA RthJF

Typical

Maximum

33

40

65

80

17

21

Unit °C/W

Notes: a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71300 S09-0870-Rev. C, 18-May-09

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Si4896DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter

Symbol

Test Conditions

Min. 2.0

Typ.

Max.

Unit

± 100

nA

Static VGS(th)

VDS = VGS, ID = 250 µA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Gate Threshold Voltage

Drain-Source On-State Resistancea

Diode Forward Voltage

a

VDS = 64 V, VGS = 0 V

1

VDS = 64 V, VGS = 0 V, TJ = 55 °C

5

VDS ≥ 5 V, VGS = 10 V

RDS(on)

Forward Transconductancea

V

µA

50

A

VGS = 10 V, ID = 10 A

0.0135

0.0165

VGS = 6.0 V, ID = 8.0 A

0.0175

0.022

gfs

VDS = 15 V, ID = 10 A

25

VSD

IS = 2.8 A, VGS = 0 V

0.75

1.1

34

41

Ω S V

Dynamicb Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

VDS = 40 V, VGS = 10 V, ID = 10 A 0.2

td(on)

Turn-On Delay Time

VDD = 40 V, RL = 40 Ω ID ≅ 1.0 A, VGEN = 10 V, Rg = 6 Ω

tr

Rise Time

td(off)

Turn-Off Delay Time Fall Time

tf

Source-Drain Reverse Recovery Time

trr

nC

7.5 11.0

IF = 2.8 A, dI/dt = 100 A/µs

0.85

1.2

17

25

11

17

40

60

31

45

45

75

Ω

ns

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50

50 VGS = 10 V thru 6 V 40 I D - Drain Current (A)

I D - Drain Current (A)

40

30

5V

20

10

30

20 TC = 125 °C 10 25 °C - 55 °C

3 V, 4 V 0

0 0

www.vishay.com 2

2

4

6

8

10

0

1

2

3

4

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

5

6

Document Number: 71300 S09-0870-Rev. C, 18-May-09

Si4896DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3000

0.04

C - Capacitance (pF)

R DS(on) - On-Resistance (Ω)

2500 0.03

VGS = 6 V

0.02

VGS = 10 V

2000

Ciss

1500

1000

0.01

Crss 500

0

0.00 0

10

20

30

40

50

0

20

60

80

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

Capacitance 2.5

VDS = 40 V ID = 10 A

VGS = 10 V ID = 10 A

16

12

8

4

(Normalized)

RDS(on) - On-Resistance

2.0

1.5

1.0

0.5

0 0

15

30

45

0.0 - 50

60

- 25

0

Qg - Total Gate Charge (nC)

50

75

100

125

150

On-Resistance vs. Junction Temperature

100

RDS(on) - On-Resistance (Ω)

0.08

TJ = 150 °C

10

1 TJ = 25 °C 0.1

0.01 0.0

25

TJ - Junction Temperature (°C)

Gate Charge

I S - Source Current (A)

40

On-Resistance vs. Drain Current 20

VGS - Gate-to-Source Voltage (V)

Coss

0.06

ID = 10 A

0.04

0.02

0.00 0.2

0.4

0.6

0.8

1.0

1.2

0

2

4

6

8

10

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 71300 S09-0870-Rev. C, 18-May-09

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Si4896DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0

100

0.5 T = 25 °C 10 0.0

I DAV (A)

VGS(th) Variance (V)

ID = 250 µA

- 0.5

T = 125 °C 1

- 1.0

- 1.5 - 50

- 25

0

25

50

75

100

125

0.1 10 -5

150

10 -4

10 -3

10 -2

10 -1

TJ - Temperature (°C)

Time (s)

Threshold Voltage

Avalanche Current vs. Time

1

10

60

50

Power (W)

40

30

20

10

0 0.01

0.1

1

10

100

Time (s)

Single Pulse Power 2

Normalized Effective Transient Thermal Impedance

1 Duty Cycle = 0.5

0.2 Notes:

0.1

PDM

0.1 0.05

t1 t2 1. Duty Cycle, D =

0.02

t1 t2

2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01 10 -4

10 -3

10 -2

10 -1

1

10

100

600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

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Document Number: 71300 S09-0870-Rev. C, 18-May-09

Si4896DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2

Normalized Effective Transient Thermal Impedance

1 Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01

10 -4

10 -3

10 -2

10 -1

1

10

100

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71300.

Document Number: 71300 S09-0870-Rev. C, 18-May-09

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Package Information Vishay Siliconix

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012

8

6

7

5

E 1

3

2

H

4

S

h x 45

D

C 0.25 mm (Gage Plane) A

e

B

All Leads q

A1

L

0.004"

MILLIMETERS

INCHES

DIM

Min

Max

Min

Max

A

1.35

1.75

0.053

0.069

A1

0.10

0.20

0.004

0.008

B

0.35

0.51

0.014

0.020

C

0.19

0.25

0.0075

0.010

D

4.80

5.00

0.189

0.196

E

3.80

4.00

0.150

e

0.101 mm

1.27 BSC

0.157 0.050 BSC

H

5.80

6.20

0.228

0.244

h

0.25

0.50

0.010

0.020

L

0.50

0.93

0.020

0.037

q

0°

8°

0°

8°

S

0.44

0.64

0.018

0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

Document Number: 71192 11-Sep-06

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Application Note 826 Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172 (4.369) 0.028

0.022

0.050

(0.559)

(1.270)

0.152

(3.861)

0.047

(1.194)

0.246

(6.248)

(0.711)

Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index

APPLICATION NOTE

Return to Index

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Document Number: 72606 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com

Vishay

Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000