PD- 95268

IRF7458PbF

SMPS MOSFET

HEXFET® Power MOSFET

Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits

S

l l l

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current

VDSS

RDS(on) max

ID

30V

8.0mΩ

14A

1

8

S

2

7

S

3

6

4

5

G

A A D D D D

SO-8

Top View

Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG

Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range

Max.

Units

30 ± 30 14 11 110 2.5 1.6 0.02 -55 to + 150

V V A W W mW/°C °C

Thermal Resistance Symbol RθJL RθJA

Parameter Junction-to-Drain Lead Junction-to-Ambient „

Typ.

Max.

Units

––– –––

20 50

°C/W

Notes  through „ are on page 8

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1 8/17/04

IRF7458PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS

RDS(on) VGS(th) IDSS IGSS

Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 2.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage –––

Typ. ––– 0.029 6.3 7.0 ––– ––– ––– ––– –––

Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 8.0 VGS = 16V, ID = 14A ƒ mΩ 9.0 VGS = 10V, ID = 11A ƒ 4.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 24V nA -200 VGS = -24V

Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss

Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. 26 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––

Typ. ––– 39 11 8.7 29 10 4.6 22 5.0 2410 1100 110

Max. Units Conditions ––– S VDS = 15V, ID = 11A 59 I D = 11A 17 nC VDS = 15V 13 VGS = 10V ƒ 44 VGS = 0V, VDS = 16V ––– VDD = 15V ––– ID = 11A ns ––– RG = 1.8Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz

Avalanche Characteristics Symbol EAS IAR

Parameter Single Pulse Avalanche Energy‚ Avalanche Current

Typ.

Max.

Units

––– –––

280 11

mJ A

Diode Characteristics Symbol IS ISM

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 

VSD

Diode Forward Voltage

trr Qrr trr Qrr

Reverse Reverse Reverse Reverse

2

Recovery Recovery Recovery Recovery

Time Charge Time Charge

Min. Typ. Max. Units –––

–––

2.3 A

–––

–––

110

––– ––– ––– ––– ––– –––

0.82 0.68 51 87 52 93

1.3 ––– 77 130 78 140

V ns nC ns nC

Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V ƒ TJ = 125°C, I S = 11A, VGS = 0V TJ = 25°C, IF = 11A, VR= 20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 11A, VR=20V di/dt = 100A/µs ƒ

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IRF7458PbF 1000

1000

VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

100

4.5V 10

20µs PULSE WIDTH TJ = 25 °C

1 0.1

1

10

100

4.5V 10

RDS(on) , Drain-to-Source On Resistance (Normalized)

I D , Drain-to-Source Current (A)

2.0

100

TJ = 150 ° C

TJ = 25 ° C V DS = 15V 20µs PULSE WIDTH

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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10

100

Fig 2. Typical Output Characteristics

1000

5.5

1

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

5.0

20µs PULSE WIDTH TJ = 150 °C

1 0.1

100

VDS , Drain-to-Source Voltage (V)

10 4.5

VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

6.0

ID = 14A

1.5

1.0

0.5

0.0 -60 -40 -20

VGS = 10V 0

20

40

60

80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance Vs. Temperature

3

IRF7458PbF 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd

Ciss Coss

1000

Crss

100

16

12

8

4

10

0 1

10

0

100

10

30

40

50

60

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

1000

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

I D , Drain Current (A)

100

100

TJ = 150 ° C 10

TJ = 25 ° C

10us

100us

10

1ms

1

0.1 0.2

V GS = 0 V 0.6

1.0

1.4

1.8

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

4

20

QG , Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

ISD , Reverse Drain Current (A)

C, Capacitance(pF)

10000

ID = 11A VDS = 24V VDS = 15V

VGS , Gate-to-Source Voltage (V)

100000

2.2

10ms

TA = 25 ° C TJ = 150 ° C Single Pulse

1 0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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Fig 6. On-Resistance Vs. Drain Current

IRF7458PbF 16

VDS

ID , Drain Current (A)

VGS 12

RD

D.U.T.

RG

+

-V DD

10V

8

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

4

VDS 90% 0

25

50

75

100

125

150

TC , Case Temperature ( °C) 10% VGS td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJA )

100

D = 0.50 0.20

10

0.10 0.05 0.02

1

0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE)

0.1

0.01 0.00001

t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA

0.0001

0.001

0.01

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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5

0.020

RDS(on) , Drain-to -Source On Resistance (Ω)

RDS (on) , Drain-to-Source On Resistance (Ω)

IRF7458PbF

0.016

VGS = 6.0V

0.012

VGS = 10V 0.008 VGS = 16V 0.004 0

20

40

60

80

100

0.016

0.014

0.012

ID = 14A

0.010

0.008

0.006

120

4

ID , Drain Current (A)

6

8

10

12

14

16

VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current

Fig 13. On-Resistance Vs. Gate Voltage

Current Regulator Same Type as D.U.T.

QG

VGS

.2µF

QGS

.3µF

D.U.T.

QGD

800

+ V - DS

EAS , Single Pulse Avalanche Energy (mJ)

50KΩ 12V

VG

VGS 3mA

Charge IG

ID

Current Sampling Resistors

Fig 13a&b. Basic Gate Charge Test Circuit and Waveform

15V

V(BR)DSS tp

L

VDS

D.U.T

RG

IAS 20V

I AS

tp

DRIVER

+ V - DD

0.01Ω

Fig 14a&b. Unclamped Inductive Test circuit and Waveforms

6

A

TOP BOTTOM

ID 5.0A 9.0A 11A

600

400

200

0 25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig 14c. Maximum Avalanche Energy Vs. Drain Current

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IRF7458PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5

A

8

6

7

6

5 H 0.25 [.010]

1

2

3

A

4

MAX

MIN

.0532

.0688

1.35

1.75

A1 .0040

.0098

0.10

0.25

b

.013

.020

0.33

0.51

c

.0075

.0098

0.19

0.25

D

.189

.1968

4.80

5.00

E

.1497

.1574

3.80

4.00

e

.050 BAS IC

1.27 BAS IC

e

e1

.025 BAS IC

0.635 BASIC

.2284

.2440

5.80

6.20

K

.0099

.0196

0.25

0.50

L

.016

.050

0.40

1.27

y

0°

8°

0°

8°

K x 45°

A C

y 0.10 [.004]

8X b 0.25 [.010]

MAX

H

e1

6X

MILLIMET ERS

MIN

A

E

INCHES

DIM

B

A1

8X L

8X c

7

C A B

FOOT PRINT

NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER

8X 0.72 [.028]

3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].

6.46 [.255]

7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET )

INT ERNAT IONAL RECT IFIER LOGO

XXXX F7101

DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER

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7

IRF7458PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

‚ Starting TJ = 25°C, L = 4.6mH

ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t