SiHP25N40D www.vishay.com

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D Series Power MOSFET FEATURES

PRODUCT SUMMARY VDS (V) at TJ max.

• Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Compliant to RoHS Directive 2011/65/EU

450

RDS(on) max. at 25 °C ()

VGS = 10 V

0.17

Qg max. (nC)

88

Qgs (nC)

12

Qgd (nC)

23

Configuration

Single D

TO-220AB

Note * Pb containing terminations are not RoHS compliant, exemptions may apply

G

G

D

S

APPLICATIONS

S

• Consumer Electronics - Displays (LCD or Plasma TV) • Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers

N-Channel MOSFET

• SMPS

ORDERING INFORMATION Package Lead (Pb)-free

TO-220AB SiHP25N40D-E3

Lead (Pb)-free and Halogen-free

SiHP25N40D-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage

LIMIT

VDS

400

VGS

Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C)

SYMBOL

VGS at 10 V

TC = 25 °C TC = 100 °C

Pulsed Drain Currenta

ID IDM

Linear Derating Factor Single Pulse Avalanche

Energyb

Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope

TJ = 125 °C

Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature)

for 10 s

± 30

UNIT V

30 25 16

A

78 2.2

W/°C

EAS

556

mJ

PD

278

W

TJ, Tstg

- 55 to + 150

°C

dV/dt

24 0.6 300c

V/ns °C

Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 17 A. c. 1.6 mm from case. d. ISD  ID, starting TJ = 25 °C. S12-0625-Rev. B, 26-Mar-12

Document Number: 91483 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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THERMAL RESISTANCE RATINGS PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

-

62

Maximum Junction-to-Case (Drain)

RthJC

-

0.45

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current

VDS

VGS = 0 V, ID = 250 μA

400

-

-

V

VDS/TJ

Reference to 25 °C, ID = 250 μA

-

0.5

-

V/°C

VGS(th)

VDS = VGS, ID = 250 μA

3

-

5

V nA

VGS = ± 30 V

-

-

± 100

VDS = 400 V, VGS = 0 V

-

-

1

VDS = 320 V, VGS = 0 V, TJ = 125 °C

-

-

10

IGSS IDSS

μA

-

0.14

0.17



gfs

VDS = 50 V, ID = 13 A

-

7.4

-

S

Input Capacitance

Ciss

1707

-

Coss

-

177

-

Reverse Transfer Capacitance

Crss

VGS = 0 V, VDS = 100 V, f = 1 MHz

-

Output Capacitance Total Gate Charge

Qg

Drain-Source On-State Resistance Forward Transconductance

RDS(on)

VGS = 10 V

ID = 13 A

Dynamic

VGS = 10 V

19

-

44

88

-

12

-

-

23

-

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

-

21

42

tr

-

57

86

-

40

80

-

37

74

-

1.8

-

-

-

24

-

-

78

-

-

1.2

V

-

353

-

ns

-

4.4

-

μC

-

24

-

A

Rise Time Turn-Off Delay Time

td(off)

Fall Time

tf

Gate Input Resistance

Rg

ID = 13 A, VDS = 320 V

-

pF

VDD = 320 V, ID = 13 A, VGS = 10 V, Rg = 24.6  f = 1 MHz, open drain

nC

ns



Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Current

ISM

Diode Forward Voltage

VSD

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

Reverse Recovery Current

IRRM

S12-0625-Rev. B, 26-Mar-12

MOSFET symbol showing the integral reverse p - n junction diode

D

A

G

S

TJ = 25 °C, IS = 13 A, VGS = 0 V TJ = 25 °C, IF = IS = 13 A, dI/dt = 100 A/μs, VR = 20 V

Document Number: 91483 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TOP

15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V

60

3 TJ = 25 °C

RDS(on), Drain-to-Source On Resistance (Normalized)

ID, Drain-to-Source Current (A)

80

40

20

2.5 2 1.5 1

VGS = 10 V 0.5 0 - 60 - 40 - 20 0

0 0

5

15

20

Fig. 1 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

10 000 TJ = 150 °C Ciss

30 20

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd

1000 Coss 100 Crss 10

10 5V 1

0 0

5

10

15

20

25

30

0

VDS, Drain-to-Source Voltage (V)

100

200

300

400

VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 2 - Typical Output Characteristics

100

24

VGS, Gate-to-Source Voltage (V)

ID, Drain-to-Source Current (A)

20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V BOTTOM 6 V

40

30

VDS, Drain-to-Source Voltage (V)

TOP

50

25

Capacitance (pF)

ID, Drain-to-Source Current (A)

60

10

ID = 13 A

80

60

40 TJ = 150 °C 20 TJ = 25 °C

VDS = 320 V VDS = 200 V VDS = 80 V

20 16 12 8 4 0

0 0

5

10

15

20

VDS, Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S12-0625-Rev. B, 26-Mar-12

25

0

10

20

30

40

50

60

70

80

Qg, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91483 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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30

ISD, Reverse Drain Current (A)

100

24

ID, Drain Current (A)

TJ = 150 °C TJ = 25 °C

10

1

18

12

6 VGS = 0 V 0

0.1 0.2

0.4

0.6

0.8

1

1.2

1.4

25

1.6

VSD, Source-Drain Voltage (V)

75

100

125

150

TJ, Case Temperature (°C)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Drain Current vs. Case Temperature

500

1000 Operation in this Area Limited by RDS(on)

IDM = Limited

475

VDS, Drain-to-Source Brakdown Voltage (V)

100 ID, Drain Current (A)

50

100 μs

10 Limited by RDS(on)*

1 ms

1

10 ms

0.1

TC = 25 °C TJ = 150 °C Single Pulse

400 375 350 - 60 - 40 - 20 0

10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 8 - Maximum Safe Operating Area

Normalized Effective Transient Thermal Impedance

425

BVDSS Limited

0.01 1

450

Fig. 10 - Temperature vs. Drain-to-Source Voltage

1 Duty Cycle = 0.5 0.2 0.1 0.05

0.1

Single Pulse

0.01 0.0001

0.02

0.001

0.01

0.1

1

Pulse Time (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

S12-0625-Rev. B, 26-Mar-12

Document Number: 91483 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay Siliconix RD

VDS

QG

10 V

VGS

D.U.T.

RG

QGS

+ - VDD

QGD

VG

10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

Charge Fig. 12 - Switching Time Test Circuit

Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T.

VDS 90 %

50 kΩ 12 V

0.2 µF 0.3 µF

+

10 % VGS

D.U.T. td(on)

td(off) tf

tr

-

VDS

VGS 3 mA

Fig. 13 - Switching Time Waveforms

IG ID Current sampling resistors

Fig. 17 - Gate Charge Test Circuit

L Vary tp to obtain required IAS

VDS

D.U.T

RG

+ -

IAS

V DD

10 V 0.01 Ω

tp

Fig. 14 - Unclamped Inductive Test Circuit

VDS tp VDD VDS

IAS Fig. 15 - Unclamped Inductive Waveforms

S12-0625-Rev. B, 26-Mar-12

Document Number: 91483 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP25N40D www.vishay.com

Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit +

D.U.T.

Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer

+

-

-

Rg

• • • •

+

dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test

+ -

VDD

Driver gate drive P.W.

Period

D=

P.W. Period VGS = 10 Va

D.U.T. lSD waveform Reverse recovery current

Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt

Re-applied voltage Inductor current

VDD

Body diode forward drop

Ripple ≤ 5 %

ISD

Note a. VGS = 5 V for logic level devices

Fig. 18 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91483.

S12-0625-Rev. B, 26-Mar-12

Document Number: 91483 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com

Vishay Siliconix

TO-220-1 A

E

DIM.

Q H(1) D

3

2

L(1)

1

M*

L

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

A

4.24

4.65

0.167

0.183

b

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F ØP

MILLIMETERS

c

0.36

0.61

0.014

0.024

D

14.33

15.85

0.564

0.624

E

9.96

10.52

0.392

0.414

e

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

F

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264 0.115

J(1)

2.41

2.92

0.095

L

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

ØP

3.53

3.94

0.139

0.155

Q

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C

b e J(1) e(1)

Package Picture ASE

Revison: 14-Dec-15

Xi’an

Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000