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Si7143DP Vishay Siliconix

P-Channel 30-V (D-S) MOSFET FEATURES

PRODUCT SUMMARY RDS(on) (Ω)

ID (A)e,f

0.0100 at VGS = - 10 V

- 35

0.0186 at VGS = - 4.5V

- 35

VDS (V) - 30

• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC

Qg (Typ.) 24.6 nC

PowerPAK SO-8

APPLICATIONS S

6.15 mm

• Load Switch • Adaptor Switch • Notebook PC

5.15 mm

1

S 2

S 3

S

G

G

4 D 8

D 7

D 6

D 5

D Bottom View P-Channel MOSFET

Ordering Information: Si7143DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C

ID

IDM

Pulsed Drain Current Continuous Source-Drain Diode Current

TC = 25 °C TA = 25 °C

IS

Avalanche Current Single-Pulse Avalanche Energy

L = 0.1 mH

IAS EAS

Maximum Power Dissipation

TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C

PD

Limit - 30 ± 20 - 35e - 35e - 16.1a, b - 12.9a, b - 60 - 30 - 3.5a, b - 25 31.25 35.7 22.8 4.2a, b 2.7a, b - 50 to 150 260

Unit V

A

mJ

W

TJ, Tstg °C Soldering Recommendations (Peak Temperature)c, d Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. f. Based on TC = 25 °C Operating Junction and Storage Temperature Range

Document Number: 65670 S10-0112-Rev. A, 18-Jan-10

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Si7143DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain)

Symbol RthJA RthJC

t ≤ 10 s Steady State

Typical 25 2.9

Maximum 30 3.5

Unit °C/W

Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 70 °C/W.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter

Symbol

Test Conditions

Min.

Static Drain-Source Breakdown Voltage VDS Temperature Coefficient

VDS

VGS = 0 V, ID = - 250 µA

- 30

ΔVDS/TJ

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = - 250 µA

Gate-Source Threshold Voltage

Typ.

Max.

Unit V

- 20

mV/°C

5

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.8

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

Drain-Source On-State Resistancea

RDS(on)

Forward Transconductancea Dynamicb Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage

gfs

VDS ≤ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 16.1 A

tr

-1 - 20 0.0100

VGS = - 4.5 V, ID = 11.8 A

0.0155

0.0186

VDS = - 15 V, ID = - 16.1 A

37 2230

VDS = - 15 V, VGS = 0 V, f = 1 MHz

385

pF

322 VDS = - 15 V, VGS = - 10 V, ID = - 14.4 A VDS = - 15 V, VGS = - 4.5 V, ID = - 14.4 A

47.5

71

24.6

37

7.7

VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω

0.3

1.5

3.0

50

75

43

65

30

45

14

21

14

21

VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω

tf IS

9

18

36

54

10

20

TC = 25 °C

- 30 - 60

ISM VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

ta

Reverse Recovery Rise Time

tb

nC

12 f = 1 MHz

tf tr

Ω S

td(on) td(off)

µA A

0.0083

td(on) td(off)

- 1.2

IF = - 10 A

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Ω

ns

A

- 0.8

- 1.2

V

31

47

ns

30

45

nC

15 16

ns

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65670 S10-0112-Rev. A, 18-Jan-10

New Product

Si7143DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60

1.2 VGS = 10 V thru 5 V

50 I D - Drain Current (A)

I D - Drain Current (A)

0.9 40

30

VGS = 4 V

20

TC = 125 °C

0.6

0.3 10

TC = 25 °C TC = - 55 °C

0 0.0

0.0 0.5

1.0

1.5

2.0

2.5

0

1

VDS - Drain-to-Source Voltage (V)

3600

0.025

3000 C - Capacitance (pF)

RDS(on) - On-Resistance (Ω)

4

Transfer Characteristics

0.030

VGS = 4.5 V

0.015

0.010

Ciss

2400

1800

1200

VGS = 10 V

0.005

3

VGS - Gate-to-Source Voltage (V)

Output Characteristics

0.020

2

Coss

600 Crss

0.000

0 0

15

30

45

60

0

6

12

ID - Drain Current (A)

10

ID = 16.1 A

8 RDS(on) - On-Resistance (normalized)

- Gate-to-Source Voltage (V)

30

1.8 VDS = 8 V

ID = 16.1 A

GS

24

Capacitance

On-Resistance vs. Drain Current and Gate Voltage

V

18

VDS - Drain-Source Voltage (V)

6 VDS = 15 V 4 VDS = 24 V 2

0 0

10

20

30

40

50

1.5 VGS = 10 V 1.2 VGS = 4.5 V 0.9

0.6 - 50

- 25

0

25

50

75

100

125

Qg - Total Gate Charge (nC)

TJ - Junction Temperature (ºC)

Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 65670 S10-0112-Rev. A, 18-Jan-10

150

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Si7143DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100

0.05

RDS(on) - On-Resistance (Ω)

I S - Source Current (A)

0.04 10

TJ = 150 °C

1

TJ = 25 °C

0.03

TJ = 125 °C

0.02

0.01 TJ = 25 °C

0.1 0.0

0.00 0.3

0.6

0.9

1.2

2

4

VSD - Source-to-Drain Voltage (V)

8

10

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

- 1.3

200

ID = 250 µA

160

Power (W)

- 1.6 VGS(th) (V)

6

- 1.9

120

80

- 2.2

40

- 2.5 - 50

- 25

0

25

50

75

100

125

0 0.001

150

0.01

TJ - Temperature (°C)

0.1

1

10

Time (s)

Single Pulse Power, Junction-to-Ambient

Threshold Voltage 100

Limited by RDS(on)* 100 µs

ID - Drain Current (A)

10 1 ms 10 ms 1

100 ms 1s 10 s

0.1 DC TA = 25 °C Single Pulse 0.01 0.1

BVDSS Limited 1

10

100

VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

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Document Number: 65670 S10-0112-Rev. A, 18-Jan-10

New Product

Si7143DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60

ID - Drain Current (A)

45

30

Package Limited

15

0 0

25

50

75

100

125

150

TC - Case Temperature (°C)

Current Derating* 2.4

50

40

Power (W)

Power (W)

1.8 30

20

1.2

0.6 10

0.0

0 0

25

50

75

100

TC - Case Temperature (°C)

Power, Junction-to-Case

125

150

0

25

50

75

100

125

150

TA -- Ambient Temperature (°C)

Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 65670 S10-0112-Rev. A, 18-Jan-10

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Si7143DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1

Notes:

0.1 PDM

0.05

t1 t2 1. Duty Cycle, D =

0.02

t1 t2

2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t)

Single Pulse

0.01 10 -4

10 -3

10 -2

4. Surface Mounted

10 -1 1 Square Wave Pulse Duration (s)

100

10

1000

Normalized Thermal Transient Impedance, Junction-to-Ambient 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.05

0.1 0.02 Single Pulse

0.01 10 -4

10 -3

10 -2

10 -1

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65670.

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Document Number: 65670 S10-0112-Rev. A, 18-Jan-10

Legal Disclaimer Notice Vishay

Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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