SUP85N03-3m6P Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY VDS (V) 30

RDS(on) (Ω)

ID (A)

0.0036 at VGS = 10 V

85d

0.0044 at VGS = 4.5 V

85d

• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

Qg (Typ.) 67

APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter

TO-220AB

D

G

G D S S

Top View Ordering Information: SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter

Symbol

Limit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C TC = 70 °C

ID IDM

Pulsed Drain Current Avalanche Current a

L = 0.1 mH

Single Avalanche Energy

TC = 25 °C

Maximum Power Dissipationa

TA = 25

Operating Junction and Storage Temperature Range

°Cc

V

85d 85d 120

IAS

45

EAS

101

PD

Unit

78.1

A

mJ

b

3.1

W

TJ, Tstg

- 55 to 150

°C

Symbol

Limit

Unit

THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)

c

Junction-to-Case (Drain)

RthJA

40

RthJC

1.6

°C/W

Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.

Document Number: 65536 S09-2271-Rev. A, 02-Nov-09

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SUP85N03-3m6P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter

Symbol

Test Conditions

Min.

VDS

VDS = 0 V, ID = 250 µA

30

VGS(th)

VDS = VGS, ID = 250 µA

1

IGSS

VDS = 0 V, VGS = ± 20 V

Typ.

Max.

Unit

Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea

IDSS

2.5 ± 250

VDS = 30 V, VGS = 0 V

1

VDS = 30 V, VGS = 0 V, TJ = 125 °C

50

VDS = 30 V, VGS = 0 V, TJ = 150 °C

250

ID(on) RDS(on) gfs

VDS ≥ 10 V, VGS = 10 V

50

V nA µA A

VGS = 10 V, ID = 22 A

0.0030

0.0036

VGS = 4.5 V, ID = 20 A

0.0036

0.0044

VDS = 15 V, ID = 20 A

110

Ω S

Dynamicb Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg

Gate-Source Chargec

Qgs

c

Rg

Gate Resistance Turn-On Delay Timec Rise Timec

400 67 VDS = 15 V, VGS = 10 V, ID = 20 A

Fall Timec

td(off)

100 nC

10.5 12.2

f = 1 MHz

td(on) tr

c

pF

680

Qgd

Gate-Drain Charge

Turn-Off Delay Time

3535 VGS = 0 V, VDS = 15 V, f = 1 MHz

VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

tf

Drain-Source Body Diode Ratings and Characteristics TC = 25 °C

0.3

1.4

2.8

11

20

10

20

35

53

10

20

85

Pulsed Current

ISM

120

Forward Voltagea

VSD

Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge

IF = 10 A, VGS = 0 V

trr IRM(REC) Qrr

ns

b

IS

Continuous Current

Ω

IF = 10 A, dI/dt = 100 A/µs

A

0.83

1.5

V

41

62

ns

2

3

A

40

60

nC

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65536 S09-2271-Rev. A, 02-Nov-09

SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120

0.0045

I D - Drain Current (A)

R DS(on) - On-Resistance (Ω)

VGS = 10 V thru 4 V

100

VGS = 3 V 80

60

40

0.0040

VGS = 4.5 V 0.0035 VGS = 10 V 0.0030

20

0 0.0

0.0025 0.5

1.0

1.5

2.0

0

20

40

VDS - Drain-to-Source Voltage (V)

80

100

ID - Drain Current (A)

Output Characteristics

On-Resistance vs. Drain Current

5

0.020

4

0.016

R DS(on) - On-Resistance (Ω)

I D - Drain Current (A)

60

3

2 TC = 25 °C 1

0.012

0.008

TJ = 150 °C

0.004

TC = 125 °C 0 0.0

TJ = 25 °C

TC = - 55 °C 0.6

1.2

1.8

2.4

0.000

3.0

0

2

4

6

8

VGS - Gate-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

On-Resistance vs. Gate-to-Source Voltage

10

10

300

VGS - Gate-to-Source Voltage (V)

g fs - Transconductance (S)

ID = 20 A TC = - 55 °C

240

180

TC = 25 °C

120

TC = 125 °C

60

8 VDS = 15 V 6 VDS = 8 V

VDS = 24 V

4

2

0

0 0

12

Document Number: 65536 S09-2271-Rev. A, 02-Nov-09

24

36

48

60

0

20

40

60

I D - Drain Current (A)

Qg - Total Gate Charge (nC)

Transconductance

Gate Charge

80

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SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1

100

I S - Source Current (A)

1.8 ID = 250 µA

TJ = 150 °C VGS(th) (V)

10

TJ = 25 °C

1.5

1.2

1 0.9

0.1 0.0

0.2

0.4

0.6

0.8

1.0

0.6 - 50

1.2

0

25

50

75

TJ - Temperature (°C)

Source-Drain Diode Forward Voltage

Threshold Voltage

5000

100

125

150

100

125

150

VDS - Drain-to-Source Voltage (V)

41

Ciss

4000 C - Capacitance (pF)

- 25

VSD - Source-to-Drain Voltage (V)

3000

2000 Coss 1000

39 ID = 250 µA 37

35

Crss 0 0

5

10

15

20

25

33 - 50

30

- 25

0

25

50

75

VDS - Drain-to-Source Voltage (V)

TJ - Junction Temperature (°C)

Capacitance

Drain Source Breakdown vs. Junction Temperature

1.8

160

1.5

120 I D - Drain Current (A)

(Normalized)

R DS(on) - On-Resistance

ID = 20 A

1.2

0.9

VGS = 10 V

0.6 - 50

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80

40

VGS = 4.5 V - 25

Package Limited

0

25

0 50

75

100

125

150

0

25

50

75

100

TJ - Junction Temperature (°C)

TC - Case Temperature (°C)

On-Resistance vs. Junction Temperature

Current Derating

125

150

Document Number: 65536 S09-2271-Rev. A, 02-Nov-09

SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted 1000

100

Limited by RDS(on)*

TJ = 25 °C

TJ = 150 °C

10

I D - Drain Current (A)

I DAV (A)

100 100 µA 10

1 ms 10 ms, 100 ms 1 s, 10 s, DC

1

TC = 25 °C Single Pulse

0.1

1 10-5

10-4

10-3

10-2

10-1

Time (s)

Single Pulse Avalanche Current Capability vs. Time

0.01 0.1

BVDSS Limited

1

10

100

VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

Normalized Effective Transient Thermal Impedance

1 Duty Cycle = 0.5

0.2 0.1

0.05 0.02 Single Pulse 0.1 10 -4

10 -3

10 -2

10 -1

1

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65536.

Document Number: 65536 S09-2271-Rev. A, 02-Nov-09

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Legal Disclaimer Notice Vishay

Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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