SUP85N03-3m6P Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY VDS (V) 30
RDS(on) (Ω)
ID (A)
0.0036 at VGS = 10 V
85d
0.0044 at VGS = 4.5 V
85d
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
Qg (Typ.) 67
APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter
TO-220AB
D
G
G D S S
Top View Ordering Information: SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID IDM
Pulsed Drain Current Avalanche Current a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25
Operating Junction and Storage Temperature Range
°Cc
V
85d 85d 120
IAS
45
EAS
101
PD
Unit
78.1
A
mJ
b
3.1
W
TJ, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
1.6
°C/W
Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.
Document Number: 65536 S09-2271-Rev. A, 02-Nov-09
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SUP85N03-3m6P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea
IDSS
2.5 ± 250
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 125 °C
50
VDS = 30 V, VGS = 0 V, TJ = 150 °C
250
ID(on) RDS(on) gfs
VDS ≥ 10 V, VGS = 10 V
50
V nA µA A
VGS = 10 V, ID = 22 A
0.0030
0.0036
VGS = 4.5 V, ID = 20 A
0.0036
0.0044
VDS = 15 V, ID = 20 A
110
Ω S
Dynamicb Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Rg
Gate Resistance Turn-On Delay Timec Rise Timec
400 67 VDS = 15 V, VGS = 10 V, ID = 20 A
Fall Timec
td(off)
100 nC
10.5 12.2
f = 1 MHz
td(on) tr
c
pF
680
Qgd
Gate-Drain Charge
Turn-Off Delay Time
3535 VGS = 0 V, VDS = 15 V, f = 1 MHz
VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
0.3
1.4
2.8
11
20
10
20
35
53
10
20
85
Pulsed Current
ISM
120
Forward Voltagea
VSD
Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge
IF = 10 A, VGS = 0 V
trr IRM(REC) Qrr
ns
b
IS
Continuous Current
Ω
IF = 10 A, dI/dt = 100 A/µs
A
0.83
1.5
V
41
62
ns
2
3
A
40
60
nC
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 65536 S09-2271-Rev. A, 02-Nov-09
SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120
0.0045
I D - Drain Current (A)
R DS(on) - On-Resistance (Ω)
VGS = 10 V thru 4 V
100
VGS = 3 V 80
60
40
0.0040
VGS = 4.5 V 0.0035 VGS = 10 V 0.0030
20
0 0.0
0.0025 0.5
1.0
1.5
2.0
0
20
40
VDS - Drain-to-Source Voltage (V)
80
100
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
5
0.020
4
0.016
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
60
3
2 TC = 25 °C 1
0.012
0.008
TJ = 150 °C
0.004
TC = 125 °C 0 0.0
TJ = 25 °C
TC = - 55 °C 0.6
1.2
1.8
2.4
0.000
3.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
10
10
300
VGS - Gate-to-Source Voltage (V)
g fs - Transconductance (S)
ID = 20 A TC = - 55 °C
240
180
TC = 25 °C
120
TC = 125 °C
60
8 VDS = 15 V 6 VDS = 8 V
VDS = 24 V
4
2
0
0 0
12
Document Number: 65536 S09-2271-Rev. A, 02-Nov-09
24
36
48
60
0
20
40
60
I D - Drain Current (A)
Qg - Total Gate Charge (nC)
Transconductance
Gate Charge
80
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SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1
100
I S - Source Current (A)
1.8 ID = 250 µA
TJ = 150 °C VGS(th) (V)
10
TJ = 25 °C
1.5
1.2
1 0.9
0.1 0.0
0.2
0.4
0.6
0.8
1.0
0.6 - 50
1.2
0
25
50
75
TJ - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
5000
100
125
150
100
125
150
VDS - Drain-to-Source Voltage (V)
41
Ciss
4000 C - Capacitance (pF)
- 25
VSD - Source-to-Drain Voltage (V)
3000
2000 Coss 1000
39 ID = 250 µA 37
35
Crss 0 0
5
10
15
20
25
33 - 50
30
- 25
0
25
50
75
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
1.8
160
1.5
120 I D - Drain Current (A)
(Normalized)
R DS(on) - On-Resistance
ID = 20 A
1.2
0.9
VGS = 10 V
0.6 - 50
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80
40
VGS = 4.5 V - 25
Package Limited
0
25
0 50
75
100
125
150
0
25
50
75
100
TJ - Junction Temperature (°C)
TC - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
125
150
Document Number: 65536 S09-2271-Rev. A, 02-Nov-09
SUP85N03-3m6P Vishay Siliconix TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 1000
100
Limited by RDS(on)*
TJ = 25 °C
TJ = 150 °C
10
I D - Drain Current (A)
I DAV (A)
100 100 µA 10
1 ms 10 ms, 100 ms 1 s, 10 s, DC
1
TC = 25 °C Single Pulse
0.1
1 10-5
10-4
10-3
10-2
10-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
0.01 0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient Thermal Impedance
1 Duty Cycle = 0.5
0.2 0.1
0.05 0.02 Single Pulse 0.1 10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Document Number: 65536 S09-2271-Rev. A, 02-Nov-09
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Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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