Si8821EDB www.vishay.com

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET FEATURES

PRODUCT SUMMARY VDS (V)

-30

RDS(on) (Ω) Max.

ID (A) a, e

0.135 at VGS = -4.5 V

-2.3

0.150 at VGS = -3.7 V

-2.1

0.215 at VGS = -2.5 V

-1.8

MICRO FOOT® 0.8 x 0.8 S 3

xxx xx

5.2 nC

• TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Typical ESD protection 1400 V HBM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

S 2

APPLICATIONS

S

• Load switches and chargers switches • Battery management, power management

8 0. m m

1

Qg (Typ.)

mm 0.8

Backside View

1 G

G

• DC/DC converters

4 D Bump Side View

• For smart phones, tablet PCs, and mobile computing D

Marking Code: xx = AL xxx = Date/Lot traceability code Ordering Information: Si8821EDB-T2-E1 (lead (Pb)-free and halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter

Symbol

Limit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

± 12

TA = 70 °C TA = 25 °C

ID

Continuous Source-Drain Diode Current

IDM TC = 25 °C TA = 25 °C

IS

TA = 70 °C TA = 25 °C

PD

Package Reflow Conditions c

A

-15 -0.7 a -0.4 b

0.6 a 0.5 b

W

0.3 b

TA = 70 °C Operating Junction and Storage Temperature Range

-1.6 b

0.9 a

TA = 25 °C Maximum Power Dissipation

-1.8 a

-1.3 b

TA = 70 °C Pulsed Drain Current (t = 300 μs)

V

-2.3 a

TA = 25 °C Continuous Drain Current (TJ = 150 °C)

Unit

TJ, Tstg

-55 to 150

VPR

260

IR/Convection

260

°C

Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C.

S15-0509-Rev. D, 16-Mar-15

Document Number: 63268 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8821EDB www.vishay.com

Vishay Siliconix

THERMAL RESISTANCE RATINGS Parameter

Symbol a, b

t=5s

Maximum Junction-to-Ambient c, d

t=5s

Maximum Junction-to-Ambient

RthJA

Typical

Maximum

105

135

200

260

Unit °C/W

Notes a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 185 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 330 °C/W.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

VDS

VGS = 0 V, ID = -250 μA

-30

-

-

V

-

-21

-

-

0.5

-

-0.6

-

-1.3

Static Drain-Source Breakdown Voltage VDS Temperature Coefficient

ΔVDS/TJ

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

Gate-Source Threshold Voltage

VGS(th)

-

-

± 0.1

VDS = 0 V, VGS = ± 12 V

-

-

±5

VDS = -30 V, VGS = 0 V

-

-

-1

VDS = -30 V, VGS = 0 V, TJ = 70 °C

-

-

-10

ID(on)

VDS ≤ -5 V, VGS = -4.5 V

-5

-

-

VGS = -4.5 V, ID = -1 A

-

0.105

0.135

RDS(on)

VGS = -3.7 V, ID = -1 A

-

0.115

0.150

VGS = -2.5 V, ID = -0.5 A

-

0.150

0.215

VDS = -5 V, ID = -1 A

-

4.8

-

-

440

-

-

50

-

-

40

-

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Current a

Forward

Transconductance a

VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 4.5 V

Gate-Source Leakage

Drain-Source On-State Resistance a

ID = -250 μA

gfs

mV/°C V μA

μA A Ω

S

Dynamic b Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

S15-0509-Rev. D, 16-Mar-15

VDS = -15 V, VGS = 0 V, f = 1 MHz

VDS = -15 V, VGS = -10 V, ID = -1 A

-

11

17

-

5.2

8

VDS = -15 V, VGS = -4.5 V, ID = -1 A

-

0.9

-

-

1.6

-

VGS = -0.1 V, f = 1 MHz

-

15

-

-

25

50

td(on) tr

-

20

40

-

40

80

tf

-

15

30

td(on)

-

5

10

-

10

20

-

50

100

-

15

30

td(off)

tr td(off) tf

VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω

VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω

pF

nC

Ω

ns

Document Number: 63268 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8821EDB www.vishay.com

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

TA = 25 °C

-

-

-0.7

-

-

-15

-

-0.82

-1.2

V

-

11

20

ns

-

4

10

nC

-

6.5

-

-

4.5

-

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current

IS

Pulse Diode Forward Current

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

ta

Reverse Recovery Rise Time

tb

IS = -1 A, VGS = 0 V

IF = -1 A, dI/dt = 100 A/μs, TJ = 25 °C

A

ns

Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2

2.00

10-3 IGSS - Gate Current (A)

IGSS - Gate Current (mA)

1.50

TJ = 25 °C 1.00

0.50

10-4 10-5

TJ = 150 °C

10-6 TJ = 25 °C

10-7 10-8 10-9

0.00 0

3

6

9

12

15

VGS - Gate-Source Voltage (V)

Gate Current vs. Gate-Source Voltage

S15-0509-Rev. D, 16-Mar-15

18

0

3

6

9

12

15

18

VGS - Gate-to-Source Voltage (V)

Gate Current vs. Gate-Source Voltage

Document Number: 63268 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8821EDB www.vishay.com

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15

5

VGS = 5 V thru 3.5 V VGS = 3 V

4

ID - Drain Current (A)

ID - Drain Current (A)

12

9 VGS = 2.5 V 6

3

3

2 TC = 25 °C 1

VGS = 2 V

TC = 125 °C TC = - 55 °C

VGS = 1.5 V 0

0 0.0

0.5

1.0

1.5

2.0

2.5

0.0

3.0

0.5

1.0

1.5

2.0

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

0.400

2.5

700

VGS = 2.5 V

0.300 C - Capacitance (pF)

RDS(on) - On-Resistance (Ω)

600

0.200 VGS = 3.7 V 0.100

Ciss

500 400 300 200

VGS = 4.5 V 100

0.000

0

0

3

6

9

12

15

0

5

10

15

20

25

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

10

30

1.6 VDS = 7.5 V

ID = 1 A

8

RDS(on) - On-Resistance (Normalized)

VGS - Gate-to-Source Voltage (V)

Coss Crss

6 VDS = 15 V

4

VDS = 24 V

2

0

VGS = 4.5, 3.7 V, ID = 1 A

1.4

VGS = 2.5 V, ID = 0.5 A 1.2

1.0

0.8

0.6

0

3

6

9

Qg - Total Gate Charge (nC)

Gate Charge S15-0509-Rev. D, 16-Mar-15

12

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

Document Number: 63268 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8821EDB www.vishay.com

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.40

10

0.35

RDS(on) - On-Resistance (Ω)

IS - Source Current (A)

ID = 1 A 0.30

TJ = 150 °C

1 TJ = 25 °C

0.25 TJ = 125 °C

0.20 0.15 TJ = 25 °C

0.10 0.05

0.1

0.00 0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

2

3

4

5

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.94

14

0.92

12 10 Power (W)

0.90 VGS(th) (V)

1

0.88 ID = 250 μA

8 6

0.86 4

0.84

0.82 - 50

2

- 25

0

25 50 75 100 TJ - Temperature (°C)

125

0 0.001

150

Threshold Voltage

0.01

0.1

1 Time (s)

10

100

1000

Single Pulse Power, Junction-to-Ambient

100 Limited by RDS(on)*

ID - Drain Current (A)

10

100 µs 1 1 ms 0.1

10 ms

TA = 25 °C

BVDSS Limited

0.01 0.1

100 ms 10 s, 1s DC

1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient S15-0509-Rev. D, 16-Mar-15

Document Number: 63268 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8821EDB www.vishay.com

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.5

0.8

Power Dissipation (W)

ID - Drain Current (A)

2.0

1.5

1.0

0.6

0.4

0.2

0.5

0.0

0.0

0

25

50

75

100

125

TA - Ambient Temperature (°C)

Current Derating*

150

25

50

75 100 125 T A - Ambient Temperature (°C)

150

Power Derating

Note When mounted on 1" x 1" FR4 with full copper.

* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

S15-0509-Rev. D, 16-Mar-15

Document Number: 63268 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8821EDB www.vishay.com

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1

Notes:

0.05

PDM

0.1

t1

0.02

t2 1. Duty Cycle, D =

t1 t2 2. Per Unit Base = R thJA = 185 °C/W 3. T JM - T A = PDMZthJA(t)

Single Pulse 0.01 0.0001

0.001

4. Surface Mounted

0.01

0.1

1

100

10

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper)

1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1

Notes:

0.05

PDM

0.1

t1 t2 1. Duty Cycle, D =

0.02

t1 t2 2. Per Unit Base = R thJA = 330 °C/W 3. T JM - TA = PDMZthJA(t)

Single Pulse 0.01 0.0001

0.001

4. Surface Mounted

0.01

0.1

1

10

100

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63268.

S15-0509-Rev. D, 16-Mar-15

Document Number: 63268 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com

Vishay Siliconix

MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S

e

S

e

XXX

S

D

S

S

4x Ø b

G

D

S

AK Mark on Backside of die

A2

4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215

A1

A

e

b

k

b1

e

Bump Note 2

Note 4

Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad.

DIM.

MILLIMETERS a

INCHES

MIN.

NOM.

MAX.

MIN.

NOM.

MAX.

A

0.328

0.365

0.402

0.0129

0.0144

0.0158

A1

0.136

0.160

0.184

0.0053

0.0062

0.0072

A2

0.192

0.205

0.218

0.0076

0.0081

0.0086

b

0.200

0.220

0.240

0.0078

0.0086

0.0094

b1

0.175

0.0068

e

0.400

0.0157

S

0.160

0.180

0.200

0.0062

0.0070

0.0078

D

0.720

0.760

0.800

0.0283

0.0299

0.0314

K

0.040

0.070

0.100

0.0015

0.0027

0.0039

Note a. Use millimeters as the primary measurement.

ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033

Revision: 16-Feb-15

1

Document Number: 69442

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com

Vishay

Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000