Si4856ADY New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested
PRODUCT SUMMARY VDS (V) 30
rDS(on) (W)
ID (A)
0.0052 @ VGS = 10 V
17
0.0076 @ VGS = 4.5 V
14
Qg (Typ)
APPLICATIONS D Buck Converter D Synchronous Rectifier − Secondary Rectifier
21
SO-8 S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View S
Ordering Information: Si4856ADY—E3 Si4856ADY-T1—E3 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a, b
TA = 25_C
21
ID
17 14
TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b
IDM
"50
IS
2.7
Pulse Source-Drain Diode Current
ISM
50
Single Pulse Avalanche Current
IAS
45
EAS
100
L = 0.1 0 1 mH
Single Pulse Avalanche Energy
TC = 70_C TA = 25_C
mJ
4.2
PD
W
3.0 2.0
TA = 70_C Operating Junction and Storage Temperature Range
A
6.5
TC = 25_C Maximum Power Dissipationa
V
26
TC = 25_C TC = 70_C
Unit
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain)
Symbol t v 10 sec Steady State Steady State
RthJA RthJF
Typical
Maximum
34
41
67
80
15
19
Unit _C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. t = 10 sec Document Number: 73239 S-50031—Rev. A, 17-Jan-05
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Si4856ADY New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.5
VDS
VGS = 0 V, ID = 250 mA
30
Typ
Max
Unit
Static Gate Threshold Voltage Drain-Source Breakdown Voltage VDS Temperature Coefficient
DVDS/Tj
VGS(th) Temperature Coefficient Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea
mV/_C
−6.2
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 70_C
5
nA mA
40
VDS w 5 V, VGS = 10 V
rDS(on)
V
24
ID = 250 mA
DVGS(th)/Tj
2.5
A
VGS = 10 V, ID = 17 A
0.0043
0.0052
VGS = 4.5 V, ID = 14 A
0.0063
0.0076
gfs
VDS = 15 V, ID = 17 A
57
VSD
IS = 2.7 A, VGS = 0 V
0.72
1.1
21
32
W S V
Dynamicb Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate-Resistance
VDS = 15 V, VGS = 4.5 V, ID = 17 A
8.2
Rg
Turn-On Delay Time
0.7
td(on)
Rise Time
tr
Turn-Off Delay Time
VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W
td(off)
Fall Time
nC
7.2
tf
1.5
2.3
18
27
15
23
57
90
20
30
Source-Drain Reverse Recovery Time
trr
IF = 2.7 A, di/dt = 100 A/ms
40
60
Body Diode Reverse Recovery Charge
Qrr
IF = 2.9 A, di/dt = 100 A/ms
36
60
W
ns
nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics
Transfer Characteristics
60
60 VGS = 10 thru 4 V
50
40
I D − Drain Current (A)
I D − Drain Current (A)
50
30 20 3V 10
40 30 TC = 125_C
20 10
25_C −55_C
0 0.0
0.4
0.8
1.2
1.6
VDS − Drain-to-Source Voltage (V) www.vishay.com
2
2.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V) Document Number: 73239 S-50031—Rev. A, 17-Jan-05
Si4856ADY New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current
0.0080
Capacitance
3600
Ciss
3000
0.0070
VGS = 4.5 V
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.0075
0.0065 0.0060 0.0055 0.0050
VGS = 10 V
0.0045 0.0040
2400 1800 1200 Coss 600
Crss
0.0035 0.0030
0 0
10
20
30
40
50
0
6
Gate Charge VDS = 10 V
30
VGS = 10 V ID = 17 A
1.4 15 V
4 20 V 3 2
1.2
1.0
0.8
1 0 0
6
12
18
24
0.6 −50
30
−25
0
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.025
60
ID = 17 A r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.020
0.015
0.010 TJ = 125_C 0.005 TJ = 25_C 0.000
0.1 0.00
25
TJ − Junction Temperature (_C)
Qg − Total Gate Charge (nC)
I S − Source Current (A)
24
On-Resistance vs. Junction Temperature
1.6
rDS(on) − On-Resiistance (Normalized)
V GS − Gate-to-Source Voltage (V)
ID = 17 A 5
18
VDS − Drain-to-Source Voltage (V)
ID − Drain Current (A)
6
12
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V) Document Number: 73239 S-50031—Rev. A, 17-Jan-05
1.0
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si4856ADY New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power
Threshold Voltage 0.4
200 ID = 250 mA
160
−0.0
Power (W)
V GS(th) Variance (V)
0.2
−0.2
120
80
−0.4 40
−0.6 −0.8 −50
0 −25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (sec)
TJ − Temperature (_C)
100
Safe Operating Area 1 ms
* Limited by rDS(on)
I D − Drain Current (A)
10 10 ms 1 100 ms
0.1
TC = 25_C Single Pulse
1s 10 s dc
0.01 0.1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient Thermal Impedance
1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified
1
Duty Cycle = 0.5
0.2 Notes:
0.1
PDM
0.1 0.05
t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 67_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01 10−4
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4
10−3
10−2
10−1 1 Square Wave Pulse Duration (sec)
10
100
600
Document Number: 73239 S-50031—Rev. A, 17-Jan-05
Si4856ADY New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
2 1
Duty Cycle = 0.5
0.2 0.1 0.1
0.05 0.02 Single Pulse
0.01 10−4
10−3
10−2 10−1 Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73239. Document Number: 73239 S-50031—Rev. A, 17-Jan-05
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Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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