Si4856ADY New Product

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested

PRODUCT SUMMARY VDS (V) 30

rDS(on) (W)

ID (A)

0.0052 @ VGS = 10 V

17

0.0076 @ VGS = 4.5 V

14

Qg (Typ)

APPLICATIONS D Buck Converter D Synchronous Rectifier − Secondary Rectifier

21

SO-8 S

1

8

D

S

2

7

D

S

3

6

D

G

4

5

D

D

G

Top View S

Ordering Information: Si4856ADY—E3 Si4856ADY-T1—E3 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter

Symbol

Limit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

Continuous Drain Current (TJ = 150_C)a, b

TA = 25_C

21

ID

17 14

TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b

IDM

"50

IS

2.7

Pulse Source-Drain Diode Current

ISM

50

Single Pulse Avalanche Current

IAS

45

EAS

100

L = 0.1 0 1 mH

Single Pulse Avalanche Energy

TC = 70_C TA = 25_C

mJ

4.2

PD

W

3.0 2.0

TA = 70_C Operating Junction and Storage Temperature Range

A

6.5

TC = 25_C Maximum Power Dissipationa

V

26

TC = 25_C TC = 70_C

Unit

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain)

Symbol t v 10 sec Steady State Steady State

RthJA RthJF

Typical

Maximum

34

41

67

80

15

19

Unit _C/W C/W

Notes a. Surface Mounted on 1” x 1” FR4 Board. b. t = 10 sec Document Number: 73239 S-50031—Rev. A, 17-Jan-05

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Si4856ADY New Product

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter

Symbol

Test Condition

Min

VGS(th)

VDS = VGS, ID = 250 mA

1.5

VDS

VGS = 0 V, ID = 250 mA

30

Typ

Max

Unit

Static Gate Threshold Voltage Drain-Source Breakdown Voltage VDS Temperature Coefficient

DVDS/Tj

VGS(th) Temperature Coefficient Gate-Body Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea

mV/_C

−6.2

VDS = 0 V, VGS = "20 V

"100

VDS = 30 V, VGS = 0 V

1

VDS = 30 V, VGS = 0 V, TJ = 70_C

5

nA mA

40

VDS w 5 V, VGS = 10 V

rDS(on)

V

24

ID = 250 mA

DVGS(th)/Tj

2.5

A

VGS = 10 V, ID = 17 A

0.0043

0.0052

VGS = 4.5 V, ID = 14 A

0.0063

0.0076

gfs

VDS = 15 V, ID = 17 A

57

VSD

IS = 2.7 A, VGS = 0 V

0.72

1.1

21

32

W S V

Dynamicb Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate-Resistance

VDS = 15 V, VGS = 4.5 V, ID = 17 A

8.2

Rg

Turn-On Delay Time

0.7

td(on)

Rise Time

tr

Turn-Off Delay Time

VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W

td(off)

Fall Time

nC

7.2

tf

1.5

2.3

18

27

15

23

57

90

20

30

Source-Drain Reverse Recovery Time

trr

IF = 2.7 A, di/dt = 100 A/ms

40

60

Body Diode Reverse Recovery Charge

Qrr

IF = 2.9 A, di/dt = 100 A/ms

36

60

W

ns

nC

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics

Transfer Characteristics

60

60 VGS = 10 thru 4 V

50

40

I D − Drain Current (A)

I D − Drain Current (A)

50

30 20 3V 10

40 30 TC = 125_C

20 10

25_C −55_C

0 0.0

0.4

0.8

1.2

1.6

VDS − Drain-to-Source Voltage (V) www.vishay.com

2

2.0

0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS − Gate-to-Source Voltage (V) Document Number: 73239 S-50031—Rev. A, 17-Jan-05

Si4856ADY New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current

0.0080

Capacitance

3600

Ciss

3000

0.0070

VGS = 4.5 V

C − Capacitance (pF)

r DS(on) − On-Resistance ( W )

0.0075

0.0065 0.0060 0.0055 0.0050

VGS = 10 V

0.0045 0.0040

2400 1800 1200 Coss 600

Crss

0.0035 0.0030

0 0

10

20

30

40

50

0

6

Gate Charge VDS = 10 V

30

VGS = 10 V ID = 17 A

1.4 15 V

4 20 V 3 2

1.2

1.0

0.8

1 0 0

6

12

18

24

0.6 −50

30

−25

0

Source-Drain Diode Forward Voltage

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

0.025

60

ID = 17 A r DS(on) − On-Resistance ( W )

TJ = 150_C

10

TJ = 25_C

1

0.020

0.015

0.010 TJ = 125_C 0.005 TJ = 25_C 0.000

0.1 0.00

25

TJ − Junction Temperature (_C)

Qg − Total Gate Charge (nC)

I S − Source Current (A)

24

On-Resistance vs. Junction Temperature

1.6

rDS(on) − On-Resiistance (Normalized)

V GS − Gate-to-Source Voltage (V)

ID = 17 A 5

18

VDS − Drain-to-Source Voltage (V)

ID − Drain Current (A)

6

12

0.2

0.4

0.6

0.8

VSD − Source-to-Drain Voltage (V) Document Number: 73239 S-50031—Rev. A, 17-Jan-05

1.0

1.2

0

2

4

6

8

10

VGS − Gate-to-Source Voltage (V)

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Si4856ADY New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power

Threshold Voltage 0.4

200 ID = 250 mA

160

−0.0

Power (W)

V GS(th) Variance (V)

0.2

−0.2

120

80

−0.4 40

−0.6 −0.8 −50

0 −25

0

25

50

75

100

125

150

0.001

0.01

0.1

1

10

Time (sec)

TJ − Temperature (_C)

100

Safe Operating Area 1 ms

* Limited by rDS(on)

I D − Drain Current (A)

10 10 ms 1 100 ms

0.1

TC = 25_C Single Pulse

1s 10 s dc

0.01 0.1

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

Normalized Effective Transient Thermal Impedance

1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified

1

Duty Cycle = 0.5

0.2 Notes:

0.1

PDM

0.1 0.05

t1

t2 1. Duty Cycle, D =

t1 t2 2. Per Unit Base = RthJA = 67_C/W

0.02

3. TJM − TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01 10−4

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4

10−3

10−2

10−1 1 Square Wave Pulse Duration (sec)

10

100

600

Document Number: 73239 S-50031—Rev. A, 17-Jan-05

Si4856ADY New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient Thermal Impedance

2 1

Duty Cycle = 0.5

0.2 0.1 0.1

0.05 0.02 Single Pulse

0.01 10−4

10−3

10−2 10−1 Square Wave Pulse Duration (sec)

1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73239. Document Number: 73239 S-50031—Rev. A, 17-Jan-05

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Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 Revision: 08-Apr-05

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Legal Disclaimer Notice Vishay

Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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