AON2260 60V N-Channel MOSFET

General Description

Product Summary

The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

VDS ID (at VGS=10V)

60V 6A

RDS(ON) (at VGS = 10V)

< 44mΩ

RDS(ON) (at VGS = 4.5V)

< 53mΩ

DFN 2x2B Top View S

D

Bottom View D D D S

Pin 1 D

Pin 1

G

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS

Gate-Source Voltage Continuous Drain Current

TA=25°C

Pulsed Drain Current C Power Dissipation A

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D

Rev 0 : Dec 2011

Steady-State

A A

30

W

1.8

TJ, TSTG

Symbol t ≤ 10s

V

2.8

PD

TA=70°C

±20 4.7

IDM TA=25°C

Units V

6

ID

TA=70°C

Maximum 60

RθJA

www.aosmd.com

-55 to 150

Typ 37 66

°C

Max 45 80

Units °C/W °C/W

Page 1 of 5

AON2260

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol

Parameter

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250µA, VGS=0V

Typ

Max

60

Units V

VDS=60V, VGS=0V

1 TJ=55°C

µA

5

Gate-Body leakage current The AON2260 combines advanced trench MOSFETVtechnology with a low resistance package to provide ±100 extremely nA low R DS=0V, VGS=±20V VGS(th)

Gate Threshold Voltage

VDS=VGS，ID=250µA

1.5

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

2

2.5

36

44

61.5

75

VGS=4.5V, ID=4A

42

53

mΩ

1

V

3.5

A

VGS=10V, ID=6A RDS(ON)

Static Drain-Source On-Resistance

TJ=125°C

A

gFS

Forward Transconductance

VDS=5V, ID=6A

21

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.75

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=30V, f=1MHz

426

pF

50

pF pF Ω

2.3

3.5

SWITCHING PARAMETERS Qg(10V) Total Gate Charge

6.1

12

nC

Qg(4.5V) Total Gate Charge

2.6

6

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

VGS=10V, VDS=30V, ID=6A

1

mΩ

S

5 VGS=0V, VDS=0V, f=1MHz

V

1.2

nC

0.8

nC

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

1.5

ns

trr

Body Diode Reverse Recovery Time

IF=6A, dI/dt=100A/µs

27

Qrr

Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs

12

ns nC

VGS=10V, VDS=30V, RL=5Ω, RGEN=3Ω

3

ns

2.5

ns

15

ns

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using