AO3401A 30V P-Channel MOSFET

General Description

Product Summary

The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications.

ID (at VGS=-10V)

VDS

-30V -4.0A

RDS(ON) (at VGS=-10V)

< 50mΩ

RDS(ON) (at VGS =-4.5V)

< 60mΩ

RDS(ON) (at VGS=-2.5V)

< 85mΩ

SOT23 Top View

D

Bottom View D

D

G

S

G S

S

G

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage

VGS TA=25°C

Continuous Drain Current Pulsed Drain Current

C

Power Dissipation B

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead

Rev 3: Mar. 2011

Steady-State Steady-State

A

1.4

W

0.9

TJ, TSTG

Symbol t ≤ 10s

V

-27

PD

TA=70°C

±12 -3.2

IDM TA=25°C

Units V

-4

ID

TA=70°C

Maximum -30

RθJA RθJL

www.aosmd.com

-55 to 150

Typ 70 100 63

°C

Max 90 125 80

Units °C/W °C/W °C/W

Page 1 of 5

AO3401A

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol

Parameter

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage

Conditions

Min

ID=-250µA, VGS=0V

-30 -1

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250µA

-0.5

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-27

TJ=55°C

-5

VDS=0V, VGS= ±12V

±100

VGS=-10V, ID=-4.0A Static Drain-Source On-Resistance

TJ=125°C

50

62

75

mΩ mΩ

85

mΩ

17

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

-0.7

DYNAMIC PARAMETERS Input Capacitance Ciss

Gate resistance

41

60

VSD

Rg

V A

60

IS

Reverse Transfer Capacitance

-1.3

nA

47

VDS=-5V, ID=-4.0A

Crss

-0.9

µA

VGS=-4.5V, ID=-3.5A

Forward Transconductance

Output Capacitance

Units

VGS=-2.5V, ID=-2.5A gFS

Coss

Max

V

VDS=-30V, VGS=0V

IDSS

RDS(ON)

Typ

VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz

4

S -1

V

-2

A

645

pF

80

pF

55

pF

7.8

12

Ω

SWITCHING PARAMETERS Qg(10V) Total Gate Charge

14

nC

Qg(4.5V) Total Gate Charge

7

nC

VGS=-10V, VDS=-15V, ID=-4.0A

Qgs

Gate Source Charge

1.5

nC

Qgd

Gate Drain Charge

2.5

nC

tD(on)

Turn-On DelayTime

6.5

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr Qrr

VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω IF=-4.0A, dI/dt=100A/µs

Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs

3.5

ns

41

ns

9

ns

11

ns nC

3.5

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using