AO6801E 30V Dual P-Channel MOSFET
General Description
Product Summary
The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
ID (at VGS=-10V)
-2A
RDS(ON) (at VGS=-10V)
< 110mΩ
VDS
-30V
RDS(ON) (at VGS=-4.5V)
< 135mΩ
RDS(ON) (at VGS=-2.5V)
< 185mΩ
Typical ESD protection
HBM Class 1C
TSOP6 Top View
D1
Bottom View
D2
Top View
G1
1
6
S2
2
5
S1
G2
3
4
D2
D1 G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 0: April 2012
Steady-State Steady-State
A
0.70
W
0.45
TJ, TSTG
Symbol t ≤ 10s
V
-15
PD
TA=70°C
±12 -1.6
IDM TA=25°C
Power Dissipation B
Units V
-2.0
ID
TA=70°C
Maximum -30
RθJA RθJL
www.aosmd.com
-55 to 150
Typ 150 185 150
°C
Max 180 230 180
Units °C/W °C/W °C/W
Page 1 of 5
AO6801E
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-15
VGS=-10V, ID=-2A Static Drain-Source On-Resistance
TJ=125°C
90
110
129
158
A mΩ
135
mΩ mΩ
VDS=-5V, ID=-2A
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss
Gate resistance
V
185
IS=-1A,VGS=0V
Rg
µA
-1.5
105
Diode Forward Voltage
Output Capacitance
±10 -1.05
140
Forward Transconductance
Reverse Transfer Capacitance
µA
VGS=-2.5V, ID=-1A VSD
Coss
Units
VGS=-4.5V, ID=-1.5A
gFS
Crss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
7 -0.78
S -1
V
-1
A
305
pF
42
pF
26
pF
8.5
17
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
7
12
nC
Qg(4.5V) Total Gate Charge
3.5
6
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-2A
0.7
nC
Qgd
Gate Drain Charge
1.2
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
4
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=7.5Ω, RGEN=3Ω
23
ns
7
ns
IF=-2A, dI/dt=500A/µs
9.5
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=500A/µs
13.5
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using
