SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
N-Channel MOSFET Features █ 85V,120A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability
General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings Symbol VDSS ID
Parameter
Value
Units
Drain-Source Voltage
85
Continuous Drain Current (TC=25℃)
120
V A
Continuous Drain Current (TC=100℃)
84
A
IDM
Pulsed Drain Current (Note 1)
450
A
VGS
Gate-Source Voltage
± 20
EAS
Single Pulsed Avalanche Energy (Note 2)
928
Maximum Power Dissipation (TC=25℃)
230
V mJ W
Derating Factor above 25℃
1.53
W/℃
Operating Junction Temperature Range
-55 to +175
℃
Storage Temperature Range
-55 to +175
℃
Max.
Units
0.65
℃/ W
PD TJ TSTG
Thermal Characteristics Symbol
Parameter
Rth j-c
Thermal Resistance, Junction to case
Rth c-s
Thermal Resistance, Case to Sink
0.5
℃/ W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/ W
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Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
Electrical Characteristics (TC=25℃
unless otherwise noted)
Symbol
Test Conditions
Parameter
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
85
-
-
V
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
1
uA
IGSS
Gate Leakage Current, Forward
VGS=20V, VDS=0V
-
-
100
nA
Gate Leakage Current, Reverse
VGS=-20V, VDS=0V
-
-
-100
nA
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=250uA
2
-
4
V
RDS(on)
Drain-Source On-State Resistance
VGS=10V, ID=40A
-
5.8
7
mΩ
Qg
Total Gate Charge
VDD=60V
-
120
-
nC
Qgs
Gate-Source Charge
VGS=10V
-
32
-
nC
Qgd
Gate-Drain Charge
ID=80A
-
50
-
nC
t d(on)
Turn-on Delay Time
VDD=37.5V,VGS=10V
-
25
-
ns
tr
Turn-on Rise Time
ID=45A,RG=4.7Ω
-
66
-
ns
t d(off)
Turn-off Delay Time
-
36
-
ns
tf
Turn-off Fall Time
TC=25℃ (Note 3)
-
24
-
ns
Ciss
Input Capacitance -
VDS=25V
-
3700
-
pF
Coss
Output Capacitance
VGS=0V
-
430
-
pF
Crss
Reverse Transfer Capacitance
f = 1MHz
-
230
-
pF
(Note 3)
Source-Drain Diode Characteristics (TC=25℃ Symbol
Parameter
Test Conditions
unless otherwise noted)
Min.
Typ.
Max.
Units
IS
Continuous Source Diode Forward Current
-
-
120
A
ISM
Pulsed Source Diode Forward Current (Note 1)
-
-
450
A
VSD
Forward On Voltage
VGS=0V, IS=45A
-
-
1.2
V
tr r
Reverse Recovery Time
VGS=0V, IS=45A
-
100
150
ns
Qr r
Reverse Recovery Charge
dIF/dt = 100A/us
-
410
650
nC
Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=0.5mH, VDD=50V, RG=25 Ω, Starting TJ=25℃ 3. Pulse Width ≤ 300 us; Duty Cycle≤2%
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Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
Typical Characteristics
Drain Current
ID- Drain Current (A)
ID - Drain Current (A)
Output Characteristics
VDS - Drain-Source Voltage (V)
T j- Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
V DS- Drain-Source Voltage (V) -3-
Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
Typical Characteristics
Drain-Source On Resistance
Ptot - Power (W)
RDS(ON) - On Resistance (mΩ)
Power Dissipation
Tj - Junction Temperature (°C)
ID- Drain Current (A) Gate Threshold Voltage
RDS(ON) - On- Resistance (mΩ )
Normalized Threshold Volt age
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
T j- Junction Temperature (°C) -4-
Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
Typical Characteristics Source-Drain Diode Forward
I S - Source Current (A)
Normalized On Resista nce
Drain-Source On Resistance
Tj- Junction Temperature (°C) VSD- Source-Drain Voltage (V) Gate Charge
C - Capacit ance (pF)
V GS- Gate-Source Volt age (V)
Capacitance
VDS- Drain-Source Voltage (V)
QG - Gate Charge (nC) -5-
Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
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Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
Package Outline Dimensions are shown in millimeters R：TO220
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Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
2
S：TO263（D PAK）
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Mar.2016
SI-TECH SEMICONDUCTOR CO.,LTD S85N12R/S/RP
RP:TO220（短脚）
DIM
A B C D E F G H J K M N O P Q S T U W Y
-9-
MILLIMETERS
10.1±0.2 15.6±0.2 1.2±0.2 0.8±0.2 3.7±0.2 3.0±0.2 3.6±0.2 0.5±0.2 6.5±0.1 3.5±0.1 1.3±0.2 2.6±0.2 4.5±0.2 2.0±0.2 9.0±0.2 0.25±0.1 0.25±0.1 2.8±0.07 8.0±0.2 6.4±0.2 （单位：mm）
Mar.2016
