AO4807 30V Dual P-Channel MOSFET

General Description

Product Summary

The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

ID (at VGS=-10V)

-30V -6A

RDS(ON) (at VGS=-10V)

< 35mΩ

RDS(ON) (at VGS = -4.5V)

< 58mΩ

VDS

100% UIS Tested 100% Rg Tested

SOIC-8 Top View

D1

Bottom

D2

Top View S2 G2 S1 G1

1 2 3 4

8 7 6 5

D2 D2 D1 D1

G1

G2 S1

S2

Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage

VGS TA=25°C

Continuous Drain Current C

Units V

±20

V

-6

ID

TA=70°C

Maximum -30

-5

A

IDM

-30

Avalanche Current C

IAS, IAR

23

A

Avalanche energy L=0.1mH C TA=25°C

EAS, EAR

26

mJ

Pulsed Drain Current

Power Dissipation B

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead

Rev 6: Nov 2011

2

PD

TA=70°C

TJ, TSTG

Symbol t ≤ 10s Steady-State Steady-State

W

1.3

RθJA RθJL

-55 to 150

Typ 48 74 32

www.aosmd.com

°C

Max 62.5 90 40

Units °C/W °C/W °C/W

Page 1 of 6

AO4807

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol

Parameter

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-250µA, VGS=0V

-30 -1 TJ=55°C

-5

Gate-Body leakage current

VDS=0V, VGS= ±20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250µA

-1.3

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-30

nA

-2.4

V

21

35

31.5

45

VGS=-4.5V, ID=-5A

33

58

19

TJ=125°C

gFS

Forward Transconductance

VDS=-5V, ID=-6A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

Crss

Reverse Transfer Capacitance Gate resistance

A

-0.8

DYNAMIC PARAMETERS Input Capacitance Ciss

Rg

µA

±100

Static Drain-Source On-Resistance

Output Capacitance

Units

-1.85

VGS=-10V, ID=-6A

Coss

Max

V

VDS=-30V, VGS=0V

IGSS

RDS(ON)

Typ

VGS=0V, VDS=-15V, f=1MHz

mΩ mΩ S

-1

V

-3.5

A

760

pF

140

pF

95

pF

3.2

5.0

Ω

SWITCHING PARAMETERS Qg(10V) Total Gate Charge

13.6

16

nC

Qg(4.5V) Total Gate Charge

6.7

8

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, ID=-6A

VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω

1.5

2.5

nC

3.2

nC

8

ns

6

ns

17

ns

tf

Turn-Off Fall Time

5

ns

trr

Body Diode Reverse Recovery Time

IF=-6A, dI/dt=100A/µs

15

Qrr

Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs

9.7

ns nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using