VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com

Vishay Semiconductors

Thyristor High Voltage, Phase Control SCR, 40 A FEATURES • Designed and JEDEC-JESD47

2 (A)

qualified

according

to

• 140 °C max. operating junction temperature

TO-220AB

1

2

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

3

1 (K) (G) 3

Available

APPLICATIONS

• Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge

PRODUCT SUMMARY Package

TO-220AB

Diode variation

Single SCR

IT(AV)

25 A

VDRM/VRRM

1200 V

VTM

1.6 V

IGT

35 mA

TJ

- 40 °C to 140 °C

DESCRIPTION The VS-40TTS12... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 140 °C junction temperature.

MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV)

TEST CONDITIONS Sinusoidal waveform

VALUES

UNITS

25 A

IRMS

40

VRRM/VDRM

1200

V

ITSM

350

A

1.6

V

dV/dt

500

V/µs

dI/dt

150

A/µs

- 40 to 140

°C

VRRM, MAXIMUM PEAK REVERSE VOLTAGE V

VDRM, MAXIMUM PEAK DIRECT VOLTAGE V

TJ °C

1200

1200

- 25 to 140

TJ = 25 °C

VT

TJ

VOLTAGE RATINGS PART NUMBER VS-40TTS12PbF, VS-40TTS12-M3

Revision: 26-Jul-13

Document Number: 94390 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS PARAMETER

SYMBOL

Maximum average on-state current Maximum RMS on-state current

IT(AV) IRMS

Maximum peak, one-cycle  non-repetitive surge current

ITSM

Maximum I2t for fusing

I2t

Maximum I2t for fusing Maximum on-state voltage Low level value of on-state slope resistance Low level value of threshold voltage Maximum reverse and direct leakage current Holding current

I2t VTM rt VT(TO) IRRM/IDRM IH

Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current

IL dV/dt dI/dt

TEST CONDITIONS TC = 93 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 80 A, TJ = 25 °C TJ = 140 °C TJ = 25 °C VR = Rated VRRM/VDRM TJ = 140 °C Anode supply = 6 V, resistive load, initial IT = 1 A,  TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open

VALUES

UNITS

25 40 300 350 450 630 6300 1.6 11.4 0.96 0.5 12

A

A2s A2s V m V

mA

100 200 500 150

V/μs A/μs

VALUES

UNITS

TRIGGERING PARAMETER

SYMBOL

Maximum peak gate power

TEST CONDITIONS

PGM

8.0

PG(AV)

2.0

Maximum peak positive gate current

+ IGM

1.5

A

Maximum peak negative gate voltage

- VGM

10

V

Maximum required DC gate current to trigger

IGT

Anode supply = 6 V, resistive load, TJ = 25 °C

35

mA

Maximum required DC gate  voltage to trigger

VGT

Anode supply = 6 V, resistive load, TJ = 25 °C

1.3

Maximum DC gate voltage not to trigger

VGD

Maximum DC gate current not to trigger

IGD

Maximum average gate power

TJ = 140 °C, VDRM = Rated value

W

V

0.2 1.5

mA

VALUES

UNITS

SWITCHING PARAMETER

SYMBOL

Typical turn-on time

tgt

Typical reverse recovery time

trr

Typical turn-off time

tq

TEST CONDITIONS TJ = 25 °C

0.9 4

TJ = 140 °C

μs

110

THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER

SYMBOL

Maximum junction and storage temperature range

TJ, TStg

Maximum thermal resistance,  junction to case

RthJC

Maximum thermal resistance,  junction to ambient

RthJA

Typical thermal resistance,  case to heatsink

RthCS

TEST CONDITIONS

DC operation

Marking device

Revision: 26-Jul-13

UNITS

- 40 to 140

°C

0.8 °C/W

60 Mounting surface, smooth and greased

0.5 2

g

0.07

oz.

minimum

6 (5)

maximum

12 (10)

kgf · cm (lbf · in)

Approximate weight Mounting torque

VALUES

Case style TO-220AB

40TTS12

Document Number: 94390 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40TTS12PbF, VS-40TTS12-M3

140 RthJC (DC) = 0.8 ˚C/W

130 120

Conduction Angle

110 30˚

100

60˚ 90˚

90

120˚

80

180˚

70 0

5

10

15

20

25

30

Maximum Average On-state Power Loss (W)

Vishay Semiconductors DC 180˚ 120˚ 90˚ 60˚ 30˚

60 50 40

30 RMS Limit 20

Conduction Period

10 Tj = 125˚C

0 0

10

20

30

40

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

Fig. 4 - On-State Power Loss Characteristics

140 RthJC (DC) = 0.8 ˚C/W

130 120 Conduction Period

110 100 30˚

90

60˚

80

90˚ 120˚

180˚

DC

70 0

5

180˚ 120˚ 90˚ 60˚ 30˚

30

RMS Limit

20

Conduction Angle

10

Tj = 125˚C

0 0

5

10

15

20

25

30

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

Revision: 26-Jul-13

240 220 200 180 160 140 120 1

10

100

Fig. 5 - Maximum Non-Repetitive Surge Current

Peak Half Sine Wave On-state Current (A)

60

40

At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

260

Number of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 2 - Current Rating Characteristics

50

280

10 15 20 25 30 35 40 45

Average On-state Current (A)

Maximum Average On-state Power Loss (W)

70

Average On-state Current (A)

Peak Half Sine Wave On-state Current (A)

Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C

www.vishay.com

400

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 350 Of Conduction May Not Be Maintained. Initial Tj = 125˚C No Voltage Reapplied 300 Rated Vrrm Reapplied

250 200 150 100 0.01

0.1

1

10

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94390 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com

Vishay Semiconductors

Instantaneous On-state Current (A)

1000 Tj = 25˚C Tj = 125˚C

100

10

1 0

1

2

3

4

5

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

10

Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs

(1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms

(a) (b) TJ = -10 ˚C

TJ = 140 ˚C

1 VGD

TJ = 25 ˚C

Instantaneous Gate Voltage (V)

100

(3)

(2)

(1)

Frequency Limited by PG(AV)

IGD

0.1 0.001

(4)

0.01

0.1 1 Instantaneous Gate Current (A)

10

100

Transient Thermal Impedance ZthJC (°C/W)

Fig. 8 - Gate Characteristics

1 Steady State Value (DC Operation)

0.1 Single Pulse

0.01 0.0001

0.001

0.01 0.1 Square Wave Pulse Duration (s)

1

10

Fig. 9 - Thermal Impedance ZthJC Characteristics

Revision: 26-Jul-13

Document Number: 94390 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com

Vishay Semiconductors

ORDERING INFORMATION TABLE

Device code

VS-

40

T

T

S

12

PbF

1

2

3

4

5

6

7

1

-

Vishay Semiconductors product

2

-

Current rating, RMS value

3

-

Circuit configuration: T = Single thyristor

4

-

Package: T = TO-220

5

-

Type of silicon: S = Standard recovery rectifier

6

-

7

-

Voltage rating (12 = 1200 V) Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example) PREFERRED P/N

QUANTITY PER T/R

MINIMUM ORDER QUANTITY

VS-40TTS12PbF

50

1000

PACKAGING DESCRIPTION Antistatic plastic tubes

VS-40TTS12-M3

50

1000

Antistatic plastic tubes

LINKS TO RELATED DOCUMENTS Dimensions Part marking information

Revision: 26-Jul-13

www.vishay.com/doc?95222 TO-220AB PbF

www.vishay.com/doc?95225

TO-220AB -M3

www.vishay.com/doc?95028

Document Number: 94390 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Outline Dimensions Vishay Semiconductors

TO-220AB DIMENSIONS in millimeters and inches A

(6) E E2

ØP 0.014 M B A M

(7)

A

B Seating plane A

Thermal pad (E)

A1 1

Q (6)

D

(H1)

H1

(7)

C

D2 (6) (6) D

2 3 D L1 (2)

C

Detail B D1

3xb 1

2

3

3 x b2

Detail B C E1 (6) L Base metal View A - A c

Plating c1 (4)

c

A

2x e A2

e1

(b, b2)

b1, b3

(4)

Section C - C and D - D

0.015 M B A M Lead assignments Lead tip

Diodes

Conforms to JEDEC outline TO-220AB

1. - Anode/open 2. - Cathode 3. - Anode

SYMBOL

MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88

INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507

NOTES

A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11

SYMBOL E E1 E2 e e1 H1 L L1 ØP Q 

(7) (8)

MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93°

INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93°

NOTES 3, 6 6 7

6, 7 2

Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline

For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected]

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Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000