Thin Film Evaporation Material Source Reference Temp (°C) at Vap. Press. Melting Density Point (°C) (g/cm3)

Evaporation Techniques

10-8 Torr

10-6 Torr

10-4 Torr

Electron Beam

Crucible

Coil

Boat

Remarks (n = index of refraction)

677

821

1010

Xlnt.

TiB2-BN ZrB2 BN

W

TiB2 W

Alloys and wets; tungsten-stranded superior

Name

Symbol

Aluminum

Al

660

2.7

AlSb

1080

4.3

AlAs

1600

3.7

~1300

AlBr3

97

3.01

~50

Al4C3

1400

2.36

~800

Al2%Cu

640

2.82

AlF3

1257 Subl.

3.07

AlN

Subl.

Al2O3 Al2%Si

Aluminum Antimonide Aluminum Arsenide Aluminum Bromide Aluminum Carbide Aluminum 2% Copper Aluminum Fluoride Aluminum Nitride Aluminum Oxide (alumina) Alumnium 2% Silicon

n=2.7 Wire feed and flash. Difficult from dual sources.

Poor

3.26

~1750

Fair

2045

3.97

1550

Xlnt.

640

2.69

1010

TiB2-BN

425 Subl.

BN C Al2O3

Sb

630

6.68

Antimony Telluride

Sb2Te3

619

6.5

Antimony Trioxide

Sb2O3

656

5.2 or 5.76

Antimony Triselenide

Sb2Se3

611

Mo

Fair

700 Subl.

Antimony

Denton Vacuum

Graphite

410 490 Subl. Subl.

279 345 Subl. Subl.

Poor

600 Subl. Subl.

~300 Subl.

Graphite

Mo, W

n=1.38 at 0.55µ Decomposes. Reactice evaporate in 10-3 N2 with glow discharge.

W

Wire feed and flash. Difficult from dual sources. Mo Ta

Mo Ta Al2O3 Coated

Carbon Good

Sapphire xlnt in EB, forms smooth hard films. N=1.66

Toxic. Evaporates well. Film structure is rate-dependent.

Decomposes over 750 degrees C.

BN Al2O3

Pt

Toxic. Decomposes on W. n=2.05

Carbon

Ta

Stoichiometry variable.

Thin Film Evaporation Material Source Reference

Antimony Trisulphide

Sb2S3

550

4.64

Arsenic

As

814

5.73

As2Se3

360

4.75

As2S3

300

3.43

As2Te3

362

Ba

710

3.78

BaCl2

962

3.86

BaF2

1280

4.83

Barium Oxide

BaO

1923

Barium Sulphide

BaS

Barium Titanate Beryllium

Arsenic Selenide Arsenic Trisulphide Arsenic Telluride Barium Barium Chloride Barium Fluoride

Beryllium Chloride Beryllium Fluoride Beryllium Oxide

107 150 Subl. Subl.

~200

Good

210 Subl.

Poor

~400

Fair

Al2O3 BeO Vit. Carbon Al2O3 Quartz Al2O3 Quartz

Mo Ta

n=3.01 at 0.55µ. No decomposition.

C

Toxic. Sublimes rapidly at low temperature. n=2.41 at 3.8µ.

Mo

n=2.8

Flash 545

627

735

Fair

Good

5.72 or 5.32

~1300

Poor

2200

4.25

1100

BaTiO3

Decomposes

6

Dec.

Dec.

Dec.

Be

1278

1.85

710

878

1000

BeCl2

440

1.9

BeF2

800

1.99

BeO

2530

3.01

Bismuth

Bi

271

9.8

Bismuth Fluoride

BiF3

727

8.75

Metals

W

~650 ~700 Subl.

Denton Vacuum

Al2O3

Subl. Subl.

Al2O3

W Ta Mo

Wets w/o alloying - reacts with ceramics

Ta, Mo

Use gentle preheat to outgas

Mo

n=1.29 at 5µ. Density Rate Dependent.

Pt

Decomposes slightly. n=1.98

Mo

n=2.16 Decomposes, yields free Ba from single source; sputtering preferred; or co-evaporate from 2 sources

Xlnt.

BeO C Vit. Carbon

W

W Ta

Wets W/Mo/Ta. Metal powder and oxides are toxic. Evaporates easily.

~150 Subl. Subl.

330

410

Subl. Subl.

~200 Subl.

Good

Toxic.

1900

Good

Powders toxic. No decomposition from EB guns. n=1.72

520 ~300 Subl.

Xlnt.

Al2O3 Vit. Carbon

W

W Mo Al2O3 Ta

Graphite

Thin Film Evaporation Material Source Reference

Vapors are toxic. High Resistivity. No shorting of baskets.

n=1.74 at 1µ. 1.64 at 10µ

Bismuth Oxide Bismuth Selenide Bismuth Telluride Bismuth Titanate Bismuth Trisulphide

Bi2O3

820

8.9

~1400

Poor

Bi2Se3

710

7.66

~650

Good

Bi2Te3

585

7.85

~600

Bi2Ti2O7

Dec.

Dec.

Pt Graphite Quartz Graphite Quartz

Vapors are toxic. n=2.55 Sputtering preferred; or co-evaporate from 2 sources.

W Mo

Sputtering preferred; or co-evaporate from 2 sources. Decomposes. Sputtering preferred; or co-evaporate from 2 sources in 10-2O2

Dec.

Bi2S3

685

7.39

Boron

B

2100

2.36

1278 1548 Subl. Subl.

1797 Subl.

Xlnt.

Boron Carbide

B4C

2350

2.5

2500

2580

2650

Xlnt.

Similar to chromium.

Boron Nitride

BN

2300

2.2

Subl. Subl.

~1600 Subl.

Poor

Sputtering preferred; Decomposes.

B2O3

460

1.82

~1400

Good

B2S3

310

1.55

800

Graphite

180

Al2O3 Quartz

Boron Oxide Boron Trisulphide Cadmium Cadmium Antimonide Cadmium Arsenide Cadmium Bromide Cadmium Chloride Cadmium Fluoride Cadmium Iodide Cadmium Oxide Cadmium Selenide

n = 1.5 (approx.)

Cd

321

8.64

CdSb

456

6.92

Cd3As2

721

6.21

CdBr2

567

5.19

~300

CdCl2

570

4.05

~400

CdF2

1070

6.64

~500

CdI2

400

5.3

~250

CdO

900

6.95

~530

CdSe

1264

5.81

Denton Vacuum

64

120

Poor

C Vit. Carbon

C

Material explodes with rapid cooling. Forms carbide with container.

Pt Mo

n=1.46

W Cb Mo Ta

Poisons vacuum systems, low sticking coefficient

Quartz

Subl. Subl.

540 Subl.

n=1.56

Disproportionates. n=2.49 Good

Al2O3 Quartz

Mo Ta

Thin Film Evaporation Material Source Reference

Evaporates easily. n=2.4 at 0.6µ

Cadmium Silicide

CdSiO2

Cadmium Sulphide

CdS

1750

4.82

Cadmium Telluride

CdTe

1098

6.2

Calcium

Ca

842

1.55

Calcium Fluoride

CaF2

1360

CaO

~600 Subl. Subl.

n=1.69

550 Subl.

Fair

W Mo Ta

Sticking coefficient strongly affected by substrate temperature. n=2.4, JVST 12, 188 (1975)

W

W Mo Ta

Stoichiometry depends on substrate temperature. n=2.6 Corrodes in air.

Al2O3 Quartz

450 459 Subl.

Poor

Al2O3 Quartz

W

W

3.18

~1100

Xlnt.

Quartz

W Mo Ta

2580

3.35

~1700

W Mo Ta W Mo

CaO-SiO2

1540

2.9

CaS

Subl.

2.18

CaTiO3

1975

4.1

CaWO4

1620

6.06

Carbon

C

Subl.

1.8 - 2.3

Cerium

Ce

795

8.23

Ceric Oxide

CeO2

2600

7.3

Cerium Fluoride

CeF3

1418

6.16

Ce2O3

1692

6.87

Cs

28

1.87

CsBr

636

4.44

~400

W

n=1.70

CsCl

646

3.97

~500

W

n=1.64 Hygroscopic

CsF

684

3.59

~500

W

Calcium Oxide Calcium Silicate Calcium Sulphide Calcium Titanate Calcium Tungstate

Cerium Oxide Cesium Cesium Bromide Cesium Chloride Cesium Fluoride

Denton Vacuum

272 357 Subl. Subl.

ZrO2 Good

Quartz

1600

1690

Mo Poor

2137 Subl.

Xlnt.

1150

1380

Good

1890 2000 Subl. Subl.

2310 Subl. ~900

970

-16

22

30

Decomposes. n=2.14 Disproportionates except in sputtering.

Good 1657 1867 Subl. Subl.

Forms volatile oxides with W and Mo. n=1.84 n=1.61

1100 1490

Rate control important. Use gentle preheat to outgas. n=1.2 - 1.4

W

n=1.92 EB preferred. Arc evaporation. Poor film adhesion. Vitreous carbon n=1.47

Al2O3 BeO Vit. Carbon

W Ta

Films oxidize easily.

Good

W

Use 250-300 °C substrate temperature. n=2.2-2.4. Reacts with W.

Good

W Mo Ta

Use gentle preheat to outgas. n=1.63 at 0.55µ

Fair

W

Alloys with source; use 0.015-0.020 W boat. n=1.95

Quartz

W

S.S.

Thin Film Evaporation Material Source Reference

Cesium Hydroxide Cesium Iodide

CsOH

272

3.67

550

CsI

621

4.51

~500

2.9

~800

Pt Pt Quartz

Chiolote

Na5Al3F14

Chromium

Cr

1890

7.2

CrB

2760

6.17

CrB2

842

4.36

550

Cr3C2

1890

6.68

~2000

CrCl2

824

2.75

550

Cr2O3

2435

5.21

~2000

Cr3Si

1710

6.51

Chromium Boride Chromium Bromide Chromium Carbide Chromium Chloride Chromium Oxide Chromium Silicide Chromium Silicon Monoxide Cobalt Cobalt Bromide Cobalt Chloride Cobalt Oxide Copper

837 977 Subl. Subl.

Influenced by composition…

Cr-SiO Co

1495

8.9

CoBr2

678

4.91

Subl. Subl.

CoCl2

740

3.36

Subl. Subl.

CoO

1935

5.68

Cu

1083

8.92

Copper Chloride Copper Oxide Copper Sulphide

CuCl

422

3.53

Cu2O

1235

6

CuS

1113

6.75

Cryolite

Na3AlF6

1000

2.9

Denton Vacuum

1157 Subl.

850

990

1200

Good

Vit. Carbon

W

W Pt Mo W Cr-plated rod or strip

n=1.79 n=1.33 Films very adherent. High rates possible.

Inconel Fair

W Fe Inconel

Sublimes easily.

Good

W, Mo

Disproportionates to lower oxides, reoxidizes at 600 °C in air. n=2.4

Good

W

Flash.

W Cb

Alloys with refractory metals.

Xlnt.

Al2O3 BeO

400 Subl. 472 Subl.

Inconel Inconel Sputtering preferred.

727

857

1017

Xlnt.

Al2O3 Mo, Ta

W

Mo

~600

Subl. Subl.

~600 Subl. ~500 Subl.

1020

1480

Subl. Subl.

1260

Films do not adhere well. Use intermediate layer, e.g. chromium. Evaporates from any source materials. n=1.93

Good

Al2O3

Ta

Evaporate in 10-2 - 10-4 of O2; n=2.70 J. Electrochem. Soc. 110, 119 (1967) n=1.45

Xlnt.

Vit. Carbon

W, Mo, Ta

Thin Film Evaporation Material Source Reference

Large chunks reduce spitting. Little decomposition. n=2.34 at 6330A.

Dysprosium Dysprosium Fluoride Dysprosium Oxide Erbium Erbium Fluoride Erbium Oxide Europium Europium Fluoride Europium Oxide Europium Sulphide Gadolinium Gadolinium Oxide

Dy

1409

DyF3

1360

Dy2O3

2340

7.81

Er

1497

9.06

ErF3

1350

7.81

~750

Mo

Er2O3

2400

8.64

~1600

Ir

Loses oxygen.

Eu

822

5.26

W, Ta

Low tantalum solubility.

EuF2

1380

6.5

~950

Eu2O3

2056

7.42

~1600

EuS

8.54

625

750

Subl. Subl.

900 ~800 Subl.

Good

Ta

Good

Ta

~1400 650 775 Subl. Subl.

280 360 Subl. Subl.

930 Subl.

Good

480 Subl.

5.75

Ir

Fair

Good

7.89

Gd2O3

2310

7.41

Ga

30

5.9

GaSb

710

5.6

Fair

GaAs

1238

5.3

Good

GaN

Subl.

6.1

Gallium Oxide

Ga2O3

1900

5.88

Gallium Phosphide

GaP

1540

4.1

Germanium

Ge

937

5.35

Ge3N2

450

5.2

GeO2

1086

6.24

Germanium Nitride Germanium Oxide

Denton Vacuum

Al2O3

ThO2

Ir, Ta, W

Loses oxygen; films clear and hard.

Al2O3

Ta

High Ta solubility.

Ir

Loses oxygen. n=1.8 at 0.55µ

Good

1312

Gallium Antimonide Gallium Arsenide Gallium Nitride

W, Ta

Mo

Gd

Gallium

Loses oxygen.

760

900

1175

Xlnt. Fair

619

742

907

Good

920

957

1167

Subl. Subl.

~650 Subl.

812

~625

Carbon

Alloys with refractory metals. Use EB gun. W, Ta

Flash evaporate.

W, Ta

Flash evaporate. n=5.64 at 10.6µ Evaporate Ga in 10-3 N2.

Al2O3

~200

770

Al2O3 BeO Quartz

Xlnt.

Pr, W

Loses oxygen.

Quartz

W, Ta

Decomposes vapor mostly P.

Quartz Al2O3

W, C, Ta

Excellent filsm from EB sources. Use 0.040 W. n=4.01 Sputtering preferred.

Good

Quartz Al2O3

Ta, Mo

Thin Film Evaporation Material Source Reference

Similar to SiO, film predominantly GeO.

Germanium Telluride Glass, Schott 8329

GeTe

725

6.2 2.2

Gold

Au

1062

19.32

Hafnium Hafnium Boride

Hf

2230

13.09

HfB2

3250

10.5

HfC

4160

12.2

Hafnium Carbide

807

947

1132

Xlnt.

2160 2250 3090

Good

Subl. Subl.

HfN

2852

13.8

HfO2

2812

9.68

HfSi2

1750

7.2

Holmium

Ho

1470

8.8

HoF3

1143

7.64

Ho2O3

2370

8.41

Inconel

Ni/Cr/Fe

1425

8.5

Indium

In

157

7.3

487

InSb

535

5.8

500

InAs

943

5.7

780

In2O3

1565

7.18

Subl. Subl.

InP

1058

4.8

630

In2Se3

890

5.7

Indium Antimonide Indium Arsenide Indium Oxide Indium Phosphide Indium Selenide

Denton Vacuum

W, Mo

Xlnt.

Hafnium Nitride Hafnium Oxide Hafnium Silicide

Holmium Fluoride Holmium Oxide

Quartz Al2O3

381

650 770 Subl. Subl.

Evaporable alkali glass. Melt in air before evaporating. N=1.47 Al2O3 BN Vit. Carbon

~2500

Fair

950 Subl.

Good

W

Films soft, not very adherent.

W

Film HfO n=2.0 at 0.5µ

W, Ta

Quartz

Good

870

W, Mo Coated Al2O3

~2600 Subl.

~800

597

W

Xlnt.; Mo Liner req'd

742

Graphite Al2O3

Ir

Loses oxygen.

W

W

Use fnie wire pre-wrapped on W. Low rate req'd for smooth films.

W

W, Mo

Wets W and Cu; use Mo liner in guns.

~400

W

970

W

~1200 Subl. 730

Good

Toxic, Decomposes; sputtering preferred; or co-evaporate from 2 sources; flash. n=4.3 at 1µ Toxic, Sputtering preferred; or co-evaporate from 2 sources; flash. n=4.5 at 1µ

Al2O3

W, Pt

Film In2O; transparent conductor.

Graphite

W, Ta

Deposits P rich. Flash evaporate. Sputtering preferred; or co-evaporate from 2 sources. Flash.

Thin Film Evaporation Material Source Reference

Indium Sesquisulphide Indium Sulphide Indium Telluride Iridium

850 Subl.

Graphite

650

Graphite

In2S3

1050

4.9

In2S

653

5.87

In2Te3

667

5.8

Ir

2459

22.65

1850

2080

2380

Fair

Iron

Fe

1535

7.86

858

998

1180

Xlnt.

Iron Bromide

Fe Br2

689

4.64

Iron Chloride

FeCl2

670

2.98

Subl. Subl.

561 300 Subl. 400

Subl. Subl.

Sputtering preferred; or co-evaporate from 2 sources; flash.

FeI2

592

5.31

Iron Oxide

FeO Fe2O3

1425

5.7

Poor

1565

5.24

Good

Iron Sulphide

FeS

1195

4.84

Kanthal

FeCrAl

1500

7.1

Lanthanum Lanthanum Boride Lanthanum Bromide Lanthanum Fluoride Lanthanum Oxide

La

920

6.17

LaB6

2210

2.61

LaBr3

783

5.06

LaF3

1490

6

La2O3

2250

5.84

Lead

Pb

328

11.34

Lead Bromide

PbBr2

373

6.66

~300

Lead Chloride

PbCl2

501

5.85

~325

Lead Fluoride

PbF2

822

8.24

Lead Iodide

PbI2

502

6.16

~400 Subl. ~500

Lead Oxide

PbO

890

9.53

~550

Lead Stannate

PbSnO3

1115

8.1

Denton Vacuum

ThO2 Al2O3 BeO Fe

W

W

Attacks W. Films hard, smooth. Use gentle preheat to outgas.

W

Disproportionates to Fe3O4 at 1530 °C, n=3.0

Fe

Iron Iodide Iron Oxide

Film In2S

Fe Decomposes; sputtering preferred. Al2O3

990

~1150 1212 1388

Decomposes. W

Xlnt.

Al2O3

W W, Ta

Films will burn in air if scraped.

Good n=1.94 Hygroscopic Subl. Subl.

342

427

Subl. Subl.

670

780

900 Subl.

Good

Ta, Mo

No decomposition. n=1.59 at 0.55µ

1400

Good

W, Ta

Loses oxygen. n=1.9 at 0.5µ

497

Xlnt.

W, Mo

Toxic. Carefully controlled rates req'd for superconductors.

Al2O3

Pt

Little decomposition. n=2.2

BeO

W, Pt, Mo

Toxic. n=1.75 at 0.3µ

Quartz Quartz Al2O3

Pt

n=2.7

Pt

No decomposition. n=2.55

Al2O3

Pt

Disproportionates.

905

Poor

Al2O3 Quartz

W

Thin Film Evaporation Material Source Reference

Graphite Al2O3 Quartz Al2O3 Al2O3 Graphite

~500 Subl. 550 Subl.

Lead Selenide

PbSe

1065

8.1

Lead Sulphide

PbS

1114

7.5

Lead Telluride

PbTe

917

8.16

Lead Titanate

PbTiO3

Lithium

Li

179

0.53

LiBr

547

3.46

LiCl

613

2.07

LiF

870

2.6

Lithium Iodide

LiI

446

4.06

400

Mo, W

Lithium Oxide

Li2O

1427

2.01

850

Pt, Ir

Lithium Bromide Lithium Chloride Lithium Fluoride

Subl. Subl. Subl. Subl. 780

910

1050

W, Mo

7.52

W

Little decomposition. n=3.91

Mo, Pt, Ta

Vapors toxic. Deposits Te rich. Sputtering preferred, or co-evaporate from sources. n=5.6 at 5µ

Ta 227

875

307

1020

407

Al2O3 BeO

Ta, S.S.

Metal reacts violently in air.

~500

Ni

n=1.78

400

Ni

Use gentle preheat for outgas. n=1.66

Ni, Ta, Mo, W

Rate control important for optical films. Use gentle preheat for outgas. n=1.36

1180

Good

Good

Xlnt.

Al2O3

Al2O3

n=1.64

Lutetium

Lu

1652

9.84

1300

Lutetium Oxide

Lu2O3

2489

9.41

1400

Magnesium

Mg

651

1.74

MgAl2O4

2135

3.6

MgBr2

700

3.72

~450

Ni

Decomposes.

MgCl2

708

2.32

400

Ni

Decomposes. n=1.6

MgF2

1266

2.9-3.2

1000

Mo, Ta

Rate control and substrate heat important for optical films. n=1.38

MgI2

700

4.24

200

MgO

2800

3.58

1300

Good

Manganese

Mn

1244

7.2

647 Subl.

Good

Manganese Bromide

MnBr2

695

4.38

Magnesium Aluminate Magnesium Bromide Magnesium Chloride Magnesium Fluoride Magnesium Iodide Magnesium Oxide

Denton Vacuum

185 247 Subl. Subl.

327 Subl.

Good

Al2O3 Vit. Carbon

Ta

W

Ir

Decomposes.

W, Mo Ta, Cb

Extremely high rates possible.

Good

507 572 Subl. Subl.

500

Xlnt.

Natural spinel.

Al2O3

Ir Carbon Al2O3 Al2O3 BeO

W produces volatile oxides. n=1.7. W

W, Ta, Mo Inconel

Thin Film Evaporation Material Source Reference

Manganese Chloride Manganese Oxide Manganese Sulphide Mercury Mercury Sulphide Molybdenum Molybdenum Boride Molybdenum Carbide Molybdenum Disulphide Molybdenum Silicide Molybdenum Trioxide Neodymium Neodymium Fluoride Neodymium Oxide

MnCl2

650

2.98

Mn3O4

1705

4.86

MnS

1615

3.99

Hg

-39

13.55

HgS

Subl.

8.1

Mo

2610

10.22

MoB2

2100

7.12

Poor

Mo2C

2687

9.18

Fair

MoS2

1185

4.8

MoSi2

2050

6.3

MoO3

795

4.7

Nd

1024

7

NdF3

1410

Nd2O3

Nichrome IV

450

Inconel W

1300 -68

-42

Subl. Subl. 1592 1822

Mo

-6 250 Subl. 2117

Al2O3

Decomposes. n=2.7.

Decomposes.

Xlnt.

Films smooth, hard. Careful degas req'd.

Evaporation of Mo(CO)6 yields Mo2C.

~50 W

Decomposes.

Mo, Pt

Slight O2 loss. n=1.9

Ta

Low Ta solubility.

1062

Xlnt.

Al2O3 BN Al2O3

6.5

~900

Good

Al2O3

Mo, W

Very little decomposition. n=1.61 at 0.55µ

2272

7.24

~1400

Good

ThO2

Ta, W

Loses oxygen, films clear, EB preferred. Hygroscopic n=1.79 n varies with substrate temp.

Ni/Cr

1395

8.5

847

987

1217

Xlnt.

W

Al2O3 Coated

Alloys with refractory metals.

Nickel

Ni

1453

8.9

927

1072

1262

Xlnt.

W

W

Alloys with refractory metals. Forms smooth adherent films.

Nickel Bromide

NiBr2

963

4.64

Subl. Subl.

362 Subl.

Nickel Chloride

NiCl2

1001

3.55

Nickel Oxide Niobium (Columbium) Niobium Boride

~900 731

871

Subl.

Subl. NiO

1990

7.45

Nb

2468

8.55

NbB2

3050

6.97

Denton Vacuum

Inconel

444 Subl.

Inconel Al2O3

~1470 1728

1977

Al2O3 Vit. Carbon BeO Al2O3 BeO Vit. Carbon

2287

Xlnt.

Dissociates upon heating. n=2.18 W

Thin Film Evaporation Material Source Reference

Attacks W source.

Niobium Carbide Niobium Nitride Niobium Oxide Niobium Pentoxide Niobium Telluride Niobium-Tin Niobium Trioxide Osmium Palladium Palladium Oxide Parylene (Union Carbide) Permalloy

NbC

3800

7.82

NbN

2573

8.4

NbO Nb2O5

Fair Reactive, evaporate Nb in 10-3 N2.

6.27 1530

NbTeX

1100

Pt

4.47

W

7.6

n=2.3 Composition variable.

Nb3Sn

Xlnt.

Nb2O3

1780

7.5

Os

1700

22.5

2170

2340

2760

Fair

Pd

1550

12.4

842

992

1192

Xlnt.

PdO

870

8.31

C8H8

300-400

1.1

Ni/Fe

1395

8.7

Co-evaporate from 2 sources. W

Al2O3 BeO

W

W

Al2O3

575

Alloys with refractory metals; rapid evaporation suggested. Spits in EB. Decomposes. Vapor depositable plastic

947

1047

1307

Phosphorus

P

41.4

1.82

327

361

402

Platinum

Pt

1769

21.45

1292

1492

1747

Good

Xlnt.

Al2O3 Vit. Carbon Al2O3 C, ThO2

W

Film low in Ni content. Use 84% Ni source.

W

Alloys with metals. Films soft, poor adhesion.

W

Toxic, radioactive.

Metal reacts violently in air. W

Plutonium

Pu

635

19

Polonium

Po

254

9.4

117

170

244

Quartz

Potassium Potassium Bromide Potassium Chloride Potassium Fluoride Potassium Hydroxide Potassium Iodide Praseodymium

K

64

0.86

23

60

125

Quartz

Mo

Metal reacts violently in air. Use gentle preheat to outgas.

KBr

730

2.75

~450

Quartz

Ta, Mo

Use gentle preheat to outgas. n=1.56

KCl

776

1.98

510

Good

Ta, Ni

Use gentle preheat to outgas. n=1.49

KF

880

2.48

~500

Poor

KOH

360

2.04

~400

Pt

Use gentle preheat to outgas.

KI

723

3.13

~500

Ta

Use gentle preheat to outgas. n=1.68

Pr

931

6.78

Denton Vacuum

800

950

1150

Good

Radioactive

Quartz

Use gentle preheat to outgas. n=1.35

Ta

Thin Film Evaporation Material Source Reference

Praseodymium Oxide

Pr2O3

2125

6.88

1400

Good

ThO2

Radium

Ra

700

5

246

320

416

Rhenium Rhenium Oxide

Re

3180

20.53

1928

2207

2571

Re2O7

297

8.2

Rhodium

Rh

1966

12.41

1277

1472

1707

Rubidium Rubidium Chloride Rubidium Iodide Ruthenium

Rb

38.5

1.47

-3

37

111

ThO2 Vit. Carbon Quartz

RbCl

715

2.76

~550

Quartz

RbI

642

3.55

~400

Quartz

Ir

Poor

Loses oxygen. n=2.0

Fine wire will self-evaporate.

~100 Good

W

W

EB gun preferred.

n=1.49

Ru

2700

12.45

1780

1990

2260

Poor

Sm

1072

7.54

373

460

573

Good

Al2O3

Ta

Sm2O3

2350

7.43

Good

ThO2

Ir

Loses O2. Films smooth, clear.

Sm2S3

1900

5.72

Good

Scandium

Sc

1539

2.99

Al2O3 BeO

W

Alloys with Ta

Scandium Oxide

Sc2O3

2300

3.86

Selenium

Se

217

4.79

89

Silicon

Si

1410

2.42

992

Silicon Boride

SiB6

Samarium Samarium Oxide Samarium Sulphide

714

837

1002

Xlnt.

~400

Fair

125

170

Good

1147

1337

Fair

2.47

W

Loses oxygen. n=1.88 at 0.5µ Al2O3 Vit. Carbon BeO Ta Vit. Carbon

W Mo

W, Mo

Toxic. Poisons vacuum systems.

W Ta

Alloys with W; use heavy W boat. SiO produced above 4 x 10-6 Torr. EB best. n=3.42

Poor

Silicon Carbide Silicon Dioxide Silicon Monoxide

SiC

2700

3.22

1000

SiO2

16101710

2.2-2.7

~1025

Xlnt.

Al2O3

SiO

1702

2.1

850 Subl.

Fair

Ta

Silicon Nitride

Si3N4

Subl.

3.44

Silicon Selenide

SiSe

Denton Vacuum

Spits violently in EB. Requires degas.

Subl. Subl.

Sputtering preferred. Quartz excellent in EB. n=1.47 W

Ta

~800 550

Baffle box source best for resistance evaporation. Low rate suggested. n=1.6 n=2.1

Quartz

Thin Film Evaporation Material Source Reference

Silicon Sulphide Silicon Telluride Silver Silver Bromide Silver Chloride Silver Iodide Sodium Sodium Bromide Sodium Chloride Sodium Cyanide Sodium Fluoride Sodium Hydroxide

SiS

Subl.

SiTe2

1.85

450

Quartz

4.39

550

Quartz Evaporates well from any source.

Quartz

Ta

n=2.25

Quartz

Mo, Pt

n=2.07

Ta

n=2.21

192

Quartz

Ta, S.S.

Use gentle preheat to outgas. Metal reacts violently in air.

3.2

~400

Quartz

2.16

530

961

10.49

AgBr

432

6.47

~380

AgCl

455

5.56

~520

AgI

558

5.67

Na

97

0.97

NaBr

755

NaCl

801

NaCN

563

NaF

988

2.79

~700

NaOH

318

2.13

~470

MgO3 5Al2O3

Strontium

Sr

769

2.6

SrF2

1190

4.24

SrO

2460

4.7

S8

Supermalloy

Ni/Fe/Mo

1410

8.9

Tantalum Tantalum Boride Tantalum Carbide Tantalum Nitride

Ta

2996

16.6

TaB2

3000

12.38

TaC

3880

14.65

TaN

3360

16.3

Denton Vacuum

958

1105

Xlnt.

W

~500 74

124

Good

Good

8

Above 2000 115

SrS

847

Use gentle preheat to outgas. n=1.64

Quartz

~550

Spinel

Strontium Fluoride Strontium Oxide Strontium Sulphide Sulphur

Al2O3 Mo

Ta Mo

Ag

BeO

Cu ovens, little decomposition. Use gentle preheat to outgas. n=1.54

Ag

Use gentle preheat to outgas. n=1.45

Mo, Ta, W

Use gentle preheat to outgas. No decomposition. n=1.30 at 0.55µ.

Pt

Use gentle preheat to outgas. n=1.36

Good 239

309

Subl. Subl.

403

Poor

n=1.72 Vit. Carbon

~1000

Al2O3

1500 Subl.

Al2O3

3.7 2

Ta, W, Mo

13

19

57

Poor

Quartz

W

W, Ta, Mo

n=1.44 Mo

Reacts with Mo and W; n=1.87

Mo

Decomposes. n=2.11

W

Poisons vacuum system. Sputtering preferred; or co-evaporate from 2 sources, Permalloy and Mo. Forms good films.

Good 1960

2240

2590

Wets but does not alloy with refractory metals. May react violently in air.

Xlnt.

~2500 Reactive; evaporate Ta in 10-3 N2.

Thin Film Evaporation Material Source Reference

Tantalum Pentoxide Tantalum Sulphide Technetium Teflon

Ta2O5

1800

TaS2

1300

Tc PTFE

8.74

1550

1780

1920

2200

11.5

1570

1800

2090

330

2.9

Good

Tellurium

Te

452

6.25

157

207

277

Poor

Terbium Terbium Fluoride Terbium Oxide Terbium Oxide

Tb

1357

8.27

800

950

1150

Xlnt.

TbF3

1176

Tb2O3

2387

Thallium Thallium Bromide Thallium Chloride Thallium Iodide (B) Thallium Oxide Thorium Thorium Bromide Thorium Carbide Thorium Dioxide Thorium Fluoride Thorium Oxyfluoride Thorium Sulphide

Vit. Carbon

Al2O3 Quartz Al2O3

W

W

7.87

1300

302

11.85

TlBr

480

7.56

TlCl

430

7

TlI

440

7.09

Tl2O3

717

9.65

Th

1875

11.7

1430

1660

1925

5.67

Subl. Subl.

Subl.

280

360

Subl. Subl. Subl. Subl. Subl. Subl.

470

Poor

~250 Subl. ~150 Subl. ~250 Subl.

Ir

Partially decomposes.

Ta

Films TbO.

Al2O3 Quartz

W, Ta

Wets freely, very toxic.

Quartz

Ta

Toxic. n=2.3

Quartz

Ta

Toxic. n=2.25

Xlnt.

~2300

ThO2

3050

10.03

~2100

Good

ThF4

1110

6.3

~750

Fair

ThOF2

900

9.1

Tm2O3

Denton Vacuum

Wets w/o alloying. Toxic.

Toxic. n=2.78 Toxic, Goes to Tl2O at 850 °C

8.96

Thulium Oxide

W, Ta

350

2773

Tm

Baffled Source. Film structure doubtful.

Quartz

ThC2

Thulium

W

~800

Tl

ThS2

Slight decomposition; evaporate in 10-3 Torr of O2. n=2.0 at 1.5µ

Ta

Tb4O7

ThBr4

Ta

W

W, Ta, Mo

Toxic, radioactive.

Mo

Toxic, n=2.47 at 5µ

Carbon

Vit. Carbon

Radioactive W

Radioactive. n=1.86 at 2.2 microns

Mo

Radioactive. n=1.52. Heat substrate to above 150°C.

Mo, Ta

Radioactive, n=1.52

6.8 1545

9.32 8.9

Sputtering preferred; or co-evaporate from 2 sources. 461 554 Subl. Subl.

680 Subl. 1500

Good

Al2O3

Ta Ir

Thin Film Evaporation Material Source Reference

Decomposes.

Tin

Sn

232

7.75

Tin Oxide

SnO2

1127

6.95

682

807

Subl. Subl.

997

Xlnt.

Al2O3

W

Mo

Wets Mo; use a Ta liner in EB guns.

~1000 Subl.

Xlnt.

Quartz Al2O3

W

W

Films from W oxygen deficient, oxidize in air. n=2.0

Good

Quartz

W

Alloys with refractory metals; evolves gas on first heating.

W, Mo

Evaporate in 10-4 of O2 onto 350° substrates. n=2.4

Tin Selenide

SnSe

861

6.18

~400

Tin Sulphide

SnS

882

5.08

~450

Tin Telluride

SnTe

780

6.44

~450

Titanium Titanium Boride Titanium Carbide

Ti

1675

4.5

TiB2

2980

4.5

TiC

3140

4.93

~2300

Titanium Dioxide (rutile)

TiO2

1640

4.29

~1300

Fair

Titanium Monoxide

TiO

1750

4.93

~1500

Good

TiN

2930

5.43

Good

Mo

Sputtering preferred. Decomposes with thermal evaporation.

Ti2O3

2130

4.6

Good

W

Decomposes.

W

3410

19.3

WB 2

2900

12.75

W 2C

2860

17.15

Titanium Nitride Titanium Sesquioxide Tungsten Tungsten Boride Tungsten Carbide Tungsten Telluride Tungsten Trioxide Uranium Uranium Carbide Uranium Dioxide Uranium Fluoride Uranium Oxide Uranium Phosphide

WTe 3 1473

7.16

U

1132

19.07

UC2

2260

11.28

UO2

2176

10.9

UF4

~1000

U3O8

Dec

Denton Vacuum

1235

Quartz

1453

Xlnt.

2117

2407

2757

Vit. Carbon

W, Mo

Good

Use gentle preheat to outgas. Films TiO2 if evaporated like TiO2; n=2.2

Forms volatile oxides. Films hard & adherent.

Poor 1480

1720

2120

Xlnt.

C Quartz

Subl. Subl. 1132 1327

980 Subl. 1582 2100

Good

W, Pt

Good

W

Mo, W

Carbon

8.3 1200

Use gentle preheat to outgas. W reduces oxide slightly. n=1.68 Films oxidize. Decomposes.

W 300

8.57

TiC

Poor

9.49

WO 3

UP2

1067

Quartz

Ta causes decomposition

Ni W

Decomposes at 1300°C to UO2

Ta

Decomposes

Thin Film Evaporation Material Source Reference

Uranium Sulphide Vanadium Vanadium Boride Vanadium Carbide Vanadium Dioxide Vanadium Nitride Vanadium Pentoxide Vanadium Silicide

U2S3

1400

V

1890

5.96

VB2

2400

5.1

VC

2810

5.77

VO2

1967

4.34

VN

2320

6.13

V2O5

690

3.36

VSi2

1700

4.42

Ytterbium

Yb

824

6.98

Ytterbium Fluoride

YbF3

1157

8.17

Ytterbium Oxide

Yb2O3

2346

9.17

Yttrium

Y

1509

4.48

Y3Al5O12

1990

YF3

1387

4.01

Yttrium Oxide

Y2O3

2680

4.84

Zinc

Zn

419

7.14

Zinc Antimonide

Zn3Sb2

546

6.3

Zinc Bromide

ZnBr2

394

4.22

~300

Zinc Fluoride

ZnF2

872

4.84

~800

Zinc Nitride

Zn3N2

Zinc Oxide

ZnO

1975

5.61

~1800

Zinc Selenide

ZnSe

1526

5.42

660

Yttrium Aluminum Oxide Yttrium Fluoride

Denton Vacuum

1162

1332

1547

Xlnt.

W

Slight decomposition

W, Mo

Wets Mo. EB evaporated films preferred.

~1800 Subl. Subl.

~575 Subl.

Deposit metal in 1 x 10-3 O2

~500

520 590 Subl. Subl.

Subl. Subl. 830 973

Quartz

690 Subl.

Good

Ta

~800

Mo

n=1.57 at 3.8µ

~1500 Subl.

Ir

Loses oxygen.

W, Ta

High Ta solubility.

1157

Xlnt.

Al2O3

Good

Subl. Subl. 127

177

W W

~2000 Subl.

Good

C

250

Xlnt.

Al2O3 Quartz

Films not ferroelectric

W

Loses oxygen, films smooth and clear. n=1.79 at 1µ

Mo, W, Ta

Evaporates well under wide range of conditions.

Carbon

W

Decomposes.

Quartz

Pt, Ta

W

6.22

Mo Fair

Decomposes. Anneal in air at 450°C to reoxidize; n=2.0

Quartz

W Mo

Ta, W, Mo

Thin Film Evaporation Material Source Reference

Use gentle preheat to outgas. Evaporates well, n=2.6

Zinc Sulphide

ZnS

1830

4.09

Zinc Telluride

ZnTe

1238

6.34

Zircon

ZrSiO4

2550

4.56

Zirconium Zirconium Boride Zirconium Carbide Zirconium Nitride Zirconium Oxide Zirconium Silicide

Zr

1852

6.4

ZrB2

3040

6.08

ZrC

3540

6.73

ZrN

2980

7.09

ZrO2

2700

5.49

ZrSi2

1700

4.88

Denton Vacuum

Subl. Subl.

~800 Subl.

Good

~600

1477

1702

1987

Xlnt.

Ta, Mo

Use gentle preheat to outgas. Films partially decompose. Sticking coefficient varies with substrate temperature. n=2.3 at 0.5µ

Mo, Ta

Use gentle preheat to outgas. n=2.85 at 0.5µ

W

Alloys with W. Films oxidize readily.

Good ~2500 Reactively evaporate in 10-3 N2 atmosphere. ~2200

Good

W

Thin Film Evaporation Material Source Reference

Films oxygen deficient, clear, and hard. n=2.05 at 0.75µ