LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.8 Inch)

Pb Lead-Free Parts

LSD895/6AEGR-XX-PF

DATA SHEET

DOC. NO

:

QW0905- LSD895/6AEGR-XX-PF

REV.

:

B

DATE

: 07 - May.- 2010

發行 立碁電子

DCC

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/9

PART NO. LSD895/6AEGR-XX-PF

Package Dimensions

20.0(0.79")

PIN NO.1

8.4(0.33")

PIN 1 PIN 11

27.6 (1.09")

2.54X5 =12.7 (0.5")

20.3 (0.8")

LSD895/6AEGR-XX-PF PIN 7

LIGITEK PIN 6

ψ2.1(0.083")

Ø 0.51 TYP

3.6±0.5

15.24(0.6")

Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/9

PART NO.LSD895/6AEGR-XX-PF

Internal Circuit Diagram

LSD895AEGR-XX-PF 1

A 3

B

C

D

11

8

4

7

E 5

F

G

DP

2

10

6

F

G

DP

2

10

6

LSD896AEGR-XX-PF 1

A 3

B

C

8 11 9,12 NO PIN

D 4

7

E 5

G R

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/9

PART NO.LSD895/6AEGR-XX-PF

Electrical Connection

PIN NO.

LSD895AEGR-XX-PF

PIN NO.

LSD896AEGR-XX-PF

1

Commom Cathode (G)

1

Commom Anode (G)

2

Anode F

2

Cathode F

3

Anode A

3

Cathode A

4

Anode D

4

Cathode D

5

Anode E

5

Cathode E

6

Anode DP

6

Cathode DP

7

Commom Cathode (R)

7

Commom Anode (R)

8

Anode C

8

Cathode C

9

NO PIN

9

NO PIN

10

Anode G

10

Cathode G

11

Anode B

11

Cathode B

12

NO PIN

12

NO PIN

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/9

PART NO. LSD895/6AEGR-XX-PF

Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol

Parameter

UNIT E

G

Forward Current Per Chip

IF

30

30

mA

Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width)

IFP

120

120

mA

Power Dissipation Per Chip

PD

100

100

mW

Ir

10

μA

Operating Temperature

Topr

-25 ~ +85

℃

Storage Temperature

Tstg

-25 ~ +85

℃

Reverse Current Per Any Chip

Part Selection And Application Information(Ratings at 25℃)

common cathode or anode Material Emitted CHIP

PART NO

GaAsP/GaP Orange LSD895AEGR-XX-PF

GaP

Green

GaAsP/GaP Orange LSD896AEGR-XX-PF

GaP

Green

Common Cathode Common Anode

Electrical

λP

△λ

(nm)

(nm)

Vf(v)

Iv(mcd)

IV-M

Min. Typ. Max. Min. Typ. 635

45

1.7

2.1

2.6

1.75 3.05

565

30

1.7

2.1

2.6

1.75 3.05

635

45

1.7

2.1

2.6

1.75 3.05

565

30

1.7

2.1

2.6

1.75 3.05

Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.

2:1

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/9

PART NO. LSD895/6AEGR-XX-PF

Test Condition For Each Parameter

Symbol

Unit

Test Condition

Forward Voltage Per Chip

Vf

volt

If=20mA

Luminous Intensity Per Chip

Iv

mcd

If=10mA

Peak Wavelength

λp

nm

If=20mA

△λ

nm

If=20mA

Ir

μA

Vr=5V

Parameter

Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio

IV-M

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/9

PART NO. LSD895/6AEGR-XX-PF

Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage

Fig.2 Relative Intensity vs. Forward Current 3.0

Relative Intensity Normalize @20mA

Forward Current(mA)

1000 100

10 1.0

2.5 2.0 1.5 1.0 0.5 0.0

0.1 2.0

1.0

3.0

4.0

5.0

1.0

10

Fig.4 Relative Intensity vs. Temperature

1.2

Relative Intensity@20mA Normalize @25℃

Forward Voltage@20mA Normalize @25℃

Fig.3 Forward Voltage vs. Temperature

1.1 1.0

0.9 0.8 -20

0

20

40

60

80

100

Relative Intensity@20mA

Fig.5 Relative Intensity vs. Wavelength

1.0

0.5

0.0 600

650

Wavelength (nm)

700

3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40

-20

0

20

40

60

80

Ambient Temperature( ℃)

Ambient Temperature( ℃)

550

1000

Forward Current(mA)

Forward Voltage(V)

-40

100

750

100

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/9

PART NO. LSD895/6AEGR-XX-PF

Typical Electro-Optical Characteristics Curve G CHIP Fig.2 Relative Intensity vs. Forward Current

Fig.1 Forward current vs. Forward Voltage

3.5

Relative Intensity Normalize @20mA

Forward Current(mA)

1000 100

10 1.0

3.0 2.5 2.0 1.5 1.0 0.5 0.0

0.1 1.0

2.0

3.0

4.0

5.0

1.0

10

Fig.4 Relative Intensity vs. Temperature

1.2

Relative Intensity@20mA Normalize @25℃

Forward Voltage@20mA Normalize @25℃

Fig.3 Forward Voltage vs. Temperature

1.1 1.0

0.9 0.8 -20

0

20

40

60

80

100

Relative Intensity@20mA

Fig.5 Relative Intensity vs. Wavelength

1.0

0.5

0.0 550

600

Wavelength (nm)

3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40

-20

0

20

40

60

Ambient Temperature( ℃)

Ambient Temperature( ℃)

500

1000

Forward Current(mA)

Forward Voltage(V)

-40

100

650

80

100

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD895/6AEGR-XX-PF

Page 8/9

Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C

Temp(°C) 260° C3sec Max

260° 5° /sec max

120°

25° 0° 0

2° /sec max Preheat

50

100

60 Seconds Max

Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.

150 Time(sec)

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/9

PART NO. LSD895/6AEGR-XX-PF

Reliability Test:

Test Item

Test Condition

Description

Reference Standard

Operating Life Test

1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)

This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.

MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1

High Temperature Storage Test

1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs)

The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.

MIL-STD-883:1008 JIS C 7021: B-10

Low Temperature Storage Test

1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs)

The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.

High Temperature High Humidity Test

1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs

The purpose of this test is the resistance of the device under tropical for hours.

1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles

The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature.

MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011

Solder Resistance Test

1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec.

This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.

MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1

Solderability Test

1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec

This test intended to see soldering well performed or not.

MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

Thermal Shock Test

JIS C 7021: B-12

MIL-STD-202:103B JIS C 7021: B-11