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GT15J321 TOSHIBA Insulated Gate Bipolar Transistor

Silicon N Channel IGBT

GT15J321 High Power Switching Applications Fast Switching Applications •

Fourth-generation IGBT

•

Fast switching (FS

•

Enhancement mode type

•

High speed: tf = 0.03 μs (typ.)

•

Low saturation Voltage: VCE (sat) = 1.90 V (typ.)

•

FRD included between emitter and collector

Unit: mm

Absolute Maximum Ratings (Ta = 25°C) Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

VCES

600

V

Gate-emitter voltage

VGES

±20

V

DC

IC

15

1 ms

ICP

30

DC

IF

15

1 ms

IFM

30

Collector power dissipation (Tc = 25°C)

PC

30

W

TOSHIBA

Junction temperature

Tj

150

°C

Weight: 1.7 g

Tstg

−55~150

°C

Collector current Emitter-collector forward current

Storage temperature range

A

A

JEDEC

―

JEITA

― 2-10R1C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Equivalent Circuit

Marking

Collector

Gate

15J321 Emitter

Part No. (or abbreviation code) Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

1

2006-10-31

GT15J321 Electrical Characteristics (Ta = 25°C) Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGES

VGE = ±20 V, VCE = 0

⎯

⎯

±500

nA

Collector cut-off current

ICES

VCE = 600 V, VGE = 0

⎯

⎯

1.0

mA

VGE (OFF)

IC = 1.5 mA, VCE = 5 V

3.5

⎯

6.5

V

VCE (sat)

IC = 15 A, VGE = 15 V

⎯

1.90

2.45

V

VCE = 20 V, VGE = 0, f = 1 MHz

⎯

2300

⎯

pF

⎯

0.04

⎯

Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance

Cies Rise time

Switching time

tr

Turn-on time Fall time Turn-off time

Inductive Load

ton

VCC = 300 V, IC = 15 A

⎯

0.17

⎯

tf

VGG = 15 V, RG = 43 Ω

⎯

0.03

0.15

⎯

0.34

⎯

(Note 1)

toff

μs

Peak forward voltage

VF

IF = 15 A, VGE = 0

⎯

⎯

2.0

V

Reverse recovery time

trr

IF = 15 A, di/dt = −100 A/μs

⎯

⎯

200

ns

Thermal resistance (IGBT)

Rth (j-c)

⎯

⎯

⎯

4.16

°C/W

Thermal resistance (Diode)

Rth (j-c)

⎯

⎯

⎯

4.63

°C/W

Note 1: Switching time measurement circuit and input/output waveforms VGE

90% 10%

0 −VGE IC

L

IC

VCC

90%

90%

RG VCE

0

VCE

10%

10%

td (off)

10% td (on)

10% tr

tf toff

ton

Note 2: Switching loss measurement waveforms VGE

90% 10%

0

IC

0

VCE

5%

Eoff

Eon

2

2006-10-31

GT15J321

IC – VCE

VCE – VGE

50

20 Common emitter

VCE (V)

Common emitter Tc = 25°C

20

30

15

Collector-emitter voltage

Collector current IC

(A)

40

9

20 8 10 VGE = 7 V 0

0

1

2

3

Collector-emitter voltage

4

Tc = −40°C 16

15 8

4

0 0

5

30

12

VCE (V)

IC = 6 A

4

8

12

Gate-emitter voltage

16

VGE (V)

VCE – VGE

VCE – VGE 20

20 Common emitter

VCE (V)

Tc = 25°C 16

Collector-emitter voltage

Collector-emitter voltage

VCE (V)

Common emitter

30

12

15 8

4

0 0

IC = 6 A

4

8

12

Gate-emitter voltage

16

Tc = 125°C 16

30

12

15 8

4

0 0

20

IC = 6 A

4

8

VGE (V)

IC – VGE

16

20

VGE (V)

VCE (sat) – Tc 4 Common emitter VCE = 5 V

Collector-emitter saturation voltage VCE (sat) (V)

Common emitter

(A)

25

Collector current IC

12

Gate-emitter voltage

30

20

15

10

5

20

Tc = 125°C

−40

VGE = 15 V

30 A

3

15 A 2

IC = 6 A 1

25 0 0

4

8

12

Gate-emitter voltage

16

0 −60

20

VGE (V)

−20

20

60

100

140

Case temperature Tc (°C)

3

2006-10-31

GT15J321

Switching time

0.5

Switching time 3

Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C

(μs)

1

ton, tr – RG

Switching time ton, tr

Switching time ton, tr

(μs)

3

0.3 ton 0.1 0.05 tr

0.03

ton, tr – IC

Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C

1 0.5 0.3

ton

0.1 0.05 0.03

tr 0.01 1

3

10

30

100

Gate resistance

Switching time

1 0.5

1000

toff, tf – RG

Switching time

toff 0.1 0.05 tf

3

10

30

100

Gate resistance

RG

300

(A)

0.3 tf 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C

0.05 0.03

0

3

(Ω)

6

Switching loss 10

Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C (Note 2)

9

Eon, Eoff (mJ)

0.3 Eoff 0.1

12

15

(A)

Eon, Eoff – IC

Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C

5

Eon

0.5

15

toff, tf – IC

Collector current IC

Switching loss

Eon, Eoff (mJ) Switching loss

1

12

toff

0.5

Eon, Eoff – RG

Switching loss

3

9

1

0.01

1000

10 5

6

3

0.3

0.01 1

3

Collector current IC

Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C

0.03

0

(Ω)

Switching time toff, tf (μs)

Switching time toff, tf (μs)

3

RG

300

0.01

3

1

(Note 2)

0.5 0.3

0.1

Eoff Eon

0.05 0.03

0.05 0.03 1

3

10

30

Gate resistance

100

RG

300

0.01

1000

(Ω)

0

3

6

9

Collector current IC

4

12

15

(A)

2006-10-31

GT15J321

C – VCE

VCE, VGE – QG 500

Cies

100

3

10

30

100

300

Collector-emitter voltage

1000

12 300

200

8

4

100

0 0

3000

20

Forward current IF

(A)

Reverse recovery current Irr (A)

Common collector VGE = 0

15

Tc = 125°C 25

5

−40

0.4

0.8

1.2

1.6

Forward voltage VF

30

10

100

trr

Irr 30

0

3

(V)

3

12

10 15

(A)

Reverse bias SOA

IC max (pulsed)*

30 50 μs* 100 μs* 1 ms*

DC operation 10 ms*

1

*: Single nonrepetitive pulse 0.5 Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10

9

Forward current IF

(A)

(A) Collector current IC

5

6

50

IC max (continuous) 10

300

3

1

2.0

Collector current IC

30

0 120

1000

Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C

Safe operating area 50

100

trr, Irr − IF 100

20

0 0

80

Gate charge QG (nC)

IF − VF

10

60

40

VCE (V)

30

25

200

VCE = 100 V

VGE (V)

300

trr (ns)

3 1

Cres

Common emitter VGE = 0 f = 1 MHz Tc = 25°C

16

Reverse recovery time

10

Coes

VCE (V)

300

RL = 20 Ω 400 Tc = 25°C

Collector-emitter voltage

Capacitance C

(pF)

1000

30

20 Common emitter

Gate-emitter voltage

3000

10 5 3

1 0.5 0.3

Tj < = 125°C VGE = 15 V RG = 43 Ω

30

Collector-emitter voltage

100

300

0.1 1

1000

VCE (V)

3

10

30

Collector-emitter voltage

5

100

300

1000

VCE (V)

2006-10-31

GT15J321

Transient thermal impedance rth (t) (°C/W)

10

10

rth (t) – tw

2 Tc = 25°C 1 FRD

10

10

10

10

10

0 IGBT

−1

−2

−3

−4 10

−5

10

−4

10

−3

10

−2

Pulse width

10

−1

tw

10

0

10

1

10

2

(s)

6

2006-10-31

GT15J321

RESTRICTIONS ON PRODUCT USE

20070701-EN

• The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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2006-10-31