SIGC04T60GSE 3

IGBT Chip Features: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling

This chip is used for: • power module • discrete components

C

Applications: • drives • white goods • resonant applications

G

Chip Type

VCE

IC

Die Size

Package

SIGC04T60GSE

600V

6A

1.89 x 2.17 mm2

sawn on foil

E

Mechanical Parameters Raster size

1.89 x 2.17

Emitter pad size (incl. gate pad)

1.007 x 1.33

Gate pad size

0.361 x 0.513

mm2

Area total

4.1

Thickness

70

µm

Wafer size

200

mm

Max.possible chips per wafer Passivation frontside Pad metal Backside metal

6841 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding

Die bond

Electrically conductive glue or solder

Wire bond

Al,