RSS090P03 Transistors
Switching (−30V, −9.0A) RSS090P03 zExternal dimensions (Unit : mm)
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8).
1.27
(1)
(8)
0.4
5.0
(4)
(5)
SOP8
3.9 6.0
1.75
0.2
zApplication Power switching, DC / DC converter.
0.4Min.
Each lead has same dimensions
zStructure Silicon P-channel MOS FET
zEquivalent circuit
zPackaging specifications Package Type
Taping
(8)
(7)
(6)
(5)
TB
Code Basic ordering unit (pieces)
2500
RSS090P03
∗2 ∗1
zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of Storage temperature
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
Limits −30 ±20 ±9.0 ±36 −1.6 −36 2.0 150 −55 to +150
Unit V V A A A A W °C °C
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain
∗1 ∗1 ∗2
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
zThermal resistance (Ta=25°C) Parameter Channel to ambient
Symbol Rth (ch-a)
Limits 62.5
Unit °C / W
∗
∗ Mounted on a ceramic board.
Rev.A
1/4
RSS090P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − VGS (th) −1.0 Gate threshold voltage − Static drain-source on-state RDS (on) ∗ − resistance − Yfs ∗ 6.0 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge Qgd −
Typ. − − − − 10 15 17 − 4000 750 580 25 50 150 80 39 7.0 15
Max. ±10 − −1 −2.5 14 21 23 − − − − − − − − − − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −9.0A, VGS= −10V ID= −4.5A, VGS= −4.5V ID= −4.5A, VGS= −4.0V VDS= −10V, ID= −4.5A VDS= −10V VGS=0V f=1MHz ID= −4.5A VDD −15V VGS= −10V RL=3.3Ω RGS=10Ω VDD −15V VGS= −5V ID= −9.0A
∗Pulsed
Body diode characteristics (source-drain characteristics) VSD Forward voltage − − −1.2
V
IS= −1.6A, VGS=0V
Rev.A
2/4
RSS090P03 Transistors
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
0.1
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta=25°C Pulsed
10 VGS= −4V VGS= −4.5V VGS= −10V
1 0.1
1
GATE-SOURCE VOLTAGE : −VGS (V)
10
1 0.1
1
VGS= −4V Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
1 0.1
10
1
10
Ciss
1000 Coss Crss
100
1000
1
0.1
0.01 0.0
td (off) 100
tr td (on)
10
1 0.01
0.1
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed
tf
VGS=0V Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
Fig.5 Static Drain-Source On-State vs. Drain Current
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10
10000
10
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
DRAIN CURRENT : −ID (A)
10000
10
1
DRAIN CURRENT : −ID (A)
10
Fig.4 Static Drain-Source On-State vs. Drain Current
1
1 0.1
10
100
DRAIN CURRENT : −ID (A)
Ta=25°C f=1MHz VGS=0V 100 0.01 0.1
10
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS= −4.5V Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
VGS= −10V Pulsed
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
DRAIN CURRENT : −ID (A)
Fig.1 Typical Transfer Characteristics
100
100
REVERSE DRAIN CURRENT : −IDR (A)
1
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS= −10V Pulsed
1
10
Fig.6 Reverse Drain Current Source-Drain Current
8
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
Ta=25°C VDD= −15V ID= −9A RG=10Ω Pulsed
7 6 5 4 3 2 1 0
0
5
10
15
20
25
30
35
40
45
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
RSS090P03 Transistors zMeasurement circuits
VGS
ID
VGS
VDS
10% 90%
RL D.U.T.
90%
90%
RG VDD VDS
10% td(on)
tr ton
10% td(off)
tr toff
Fig.11 Switching Time Waveforms
Fig.10 Switching Time Test Circuit
VG VGS
ID
VDS RL
IG (Const.) D.U.T.
Qg VGS Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.A
4/4
Appendix
Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
