Do not use mounting tab or center lead, electrically connected
TO-92 Type 70
SIDAC (95 - 330 Volts) 9
General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device.
Applications • • • • • • • • •
Teccor offers the complete voltage range (95-330) over three different packages: •
TO-92 (95-280 volts)
•
Axial lead DO-15X (95-280 volts)
•
Surface Mount DO-214AA (95-280 volts)
•
TO-202AB (190-330 volts)
Teccor’s Sidacs feature glass passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments.
Features • • •
Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more information.
Teccor Electronics, Inc. (972) 580-7777
High voltage lamp ignitors Natural gas ignitors Gas oil ignitors High voltage power supplies Xenon ignitors Over voltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors
9-1
AC circuit oriented Glass-passivated junctions High surge current capability
SIDAC
Electrical Specifications IT(RMS)
Part No.
VDRM
Repetitive On-State Peak RMS Current Off-State TJ≤110°C Voltage 50/60Hz Sine Wave (7) (8)
Type
TO-92 E Package
DO-15X G Package
TO-202AB F Package
DO-214AA S Package
See “Package Dimensions” section for variations.
VBO
IDRM
Breakover Voltage 50/60Hz Sine Wave (1)
Volts
Repetitive Breakover Peak Current Off-State 50/60Hz Current Sine Wave 50/60Hz Sine Wave V=VDRM
Amps
Volts
µAmps
µAmps
MAX
MIN
MIN
MAX
MAX
MAX
K1050E70
K1050G
K1050S
1.0
±90
95
113
5
10
K1100E70 K1200E70
K1100G K1200G
K1100S K1200S
1.0 1.0
±90 ±90
104 110
118 125
5 5
10 10
K1300E70 K1400E70
K1300G K1400G
K1300S K1400S
1.0 1.0
±90 ±90
120 130
138 146
5 5
10 10
K1500E70 K2000E70
K1500G K2000G
K2000F1
K1500S K2000S
1.0 1.0
±90 ±180
140 190
170 215
5 5
10 10
K2200E70 K2400E70
K2200G K2400G
K2200F1 K2400F1
K2200S K2400S
1.0 1.0
±180 ±190
205 220
230 250
5 5
10 10
K2500E70
K2500G
K2500F1 K3000F1
K2500S
1.0 1.0
±190 ±190
240 270
280 330
5 5
10 10
General Notes
Electrical Specification Notes
•
All measurements are made at 60Hz with a resistive load at an ambient temperature of +25°C unless otherwise specified.
•
Storage temperature range (TS) is -65°C to +150°C.
•
The case (TC) or lead (TL) temperature is measured as shown on the dimensional outline drawings. See “Package Dimensions” section of this catalog.
•
Junction temperature range (TJ) is -40°C to +125°C.
(1) (2) (3) (4) (5) (6) (7)
•
Lead solder temperature is a maximum of +230°C for 10 seconds maximum; ≥ 1/16" (1.59mm) from case.
SIDAC
IBO
(8) (9)
9-2
See Figure 9.5 for VBO change vs junction temperature. See Figure 9.6 for IBO vs junction temperature. See Figure 9.2 for IH vs case temperature. See Figure 9.13 for test circuit. See Figure 9.1 for more than one full cycle rating. RθJA for TO-202 Type 23 and Type 41 is 70°C/watt. TC ≤ 90°C for TO-92 Sidac and TC ≤ 105°C for TO-202 Sidacs. TL ≤ 100°C for DO-15X and TL ≤ 90°C for DO-214AA. See Figure 9.14 for clarification of Sidac operation. For best Sidac operation, the load impedance should be near or less than switching resistance.
Teccor Electronics, Inc. (972) 580-7777
SIDAC IH
VTM
ITSM
RS
Dynamic Holding Current 50/60Hz Sine Wave R = 100Ω (3) (4)
Peak On-State Voltage IT = 1 Amp
Peak One Cycle Surge Current 50/60Hz Sine Wave (Non-Repetitive) (5)
Switching Resistance
Volts Max
mAmps
R
S
(V ±V ) BO S = -------------------------------(I ± I ) S BO
50/60Hz Sine Wave (9)
Amps
dv/dt Critical Rate-of-Rise of Off-State Voltage at Rated VDRM TJ ≤ 100°C
Electrical Specifications SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature
40
20 10 8.0 6.0 BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE.
4.0
2.0
140
Maximum Allowable Ambient Temperature (TA) - ˚C
Peak Surge (Non-Repetitive) On-State Current [I(TSM)] - Amps
100
100
80
10
100
TO
DO 15 X
20 2T YP an E d 1 TO TO 92 20 2T an YP d DO E 23 21 & 4 41
60
40
25 20
1.0 1.0
CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING
120
1000
0
Surge Current Duration - Full Cycles
0.2
0.4
0.6
0.8
1.0
RMS On-State Current [IT(RMS)] - Amps
Figure 9.1
Peak Surge Current vs Surge Current Duration
Figure 9.4
Maximum Allowable Ambient Temperature vs On-State Current +4
Percentage of VBO Change - %
1.5
Ratio of
˚
IH IH(TC=25 C)
2.0
1.0
.5
+2 0 -2 -4 -6 -8 -10
0
-40
-15
+25
+65
+105
+125
-12
˚
Case Temperature (TC) - C
+25
-40
-20
0
+20
+40
+60
+80
+100
+120 +140
Junction Temperature (TJ) - ˚C
di/dt Limit Line
600 400
ITRM VBO Firing Current Waveform
No
n-R
ep
200
Re
ea
ted
pe
titi
100 80 60 40
on
f=1 f=1 00 Hz
20 10 8 6 4
f=1
f=5 f=1
Fr
to l/f
eq
0H
ue
nc
z
yf
=5
Hz TJ=125ºC Max
kH
z
kH
z
0k
2 1 0.8 0.6
Normalized VBO Change vs Junction Temperature
Figure 9.5
Normalized DC Holding Current vs Case/Lead Temperature
Repetitive Peak Breakover Current (IBO) Multiplier
Repetitive Peak On-State Current (ITRM) - Amps
Figure 9.2
Hz
4
V=VBO
3 2
1 20
f=20 kHz
2 x 10-3
9 8 7 6 5 4
30
40
50
60
70
80
90
100
110 120 130
Junction Temperature (TJ) - C
˚
6 8
1 x 10-2
2
4
6 8
1 x 10-1
2
4 6 81
Pulse base width (to) - mSec. Figure 9.3
SIDAC
Figure 9.6
Repetitive Peak On-State Current (I TRM) vs Pulse Width at Various Frequencies
9-4
Normalized Repetitive Peak Breakover Current vs Junction Temperature
Teccor Electronics, Inc. (972) 580-7777
SIDAC 9 TL =25˚C
Positive or Negative Instantaneous On-State Current (iT) - Amps
8 4.7 µF
TO-92, DO-214AA & DO-15X "E", "S" and "G" Packages
7
-
10 µF
-
6
100V
+
4.7 kΩ
+
50V
K1200E SIDAC
½W
+ -
5 4
4.7 µF 100V
1.2 µF
200V
24 VAC 60 Hz
3 TO-202 "F" Package
2 1 H.V. IGNITOR
0 0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2 2.4
2.6
2.8
3.0
3.2
3.4
3.6
Positive or Negative Instantaneous On-State Voltage (vT ) - Volts
Figure 9.7
On-State Current vs On-State Voltage (Typical)
Ignitor Circuit (Low Voltage Input)
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Figure 9.15
2.2 2.0 Average On-State Power Dissipation [PD(AV)] - Watts
Figure 9.10
BALLAST
BALLAST
1.8 1.6
0.47µF 400V
SIDAC
1.4 1.2
3.3 KΩ
TO-202 "F" Package
SIDAC LAMP
0.22µF 7.5 KΩ
LAMP
1.0 0.8
120 VAC 60 Hz
0.6
220 VAC 60 Hz 16 mH
"E", "S" & "G" Packages TO-92, DO-214AA & DO-15X
0.4 0.2 0
0.2
0.4
0.6
0.8
120 VAC
1.0
220 VAC
RMS On-State Current [IT(RMS)] - Amps
Figure 9.8
Figure 9.11
Power Dissipation (Typical) vs On-State Current
Typical High Pressure Sodium Lamp Firing Circuit
100Ω
SCR
SIDAC 2w
100-250 VAC 60 Hz
-
XENON LAMP
10 µF
+
250V
20 MΩ
+ 10 µF - 450V
100-250 VAC 60 Hz
120VAC 60Hz
K2200G 4KV SIDAC
.01µF 400V
200400V TRIGGER TRANSFORMER 20:1
Figure 9.9
Figure 9.12
Comparison of Sidac vs SCR
Teccor Electronics, Inc. (972) 580-7777
9-5
Xenon Lamp Flashing Circuit
SIDAC
Electrical Specifications
PUSH TO TEST S1
100-250 VAC 60 Hz
VBO
SWITCH TO TEST IN EACH DIRECTION
DEVICE UNDER TEST
100 Ω 1%
VBO
IPK
VBO 100-250 VAC 60 Hz
TRACE STOPS
I
H
LOAD IH
IH
IH
S1
Figure 9.13
120-145 CONDUCTION ANGLE
˚
SCOPE INDICATIONS
SCOPE
Dynamic Holding Current Test Circuit for Sidacs
Figure 9.14
LOAD CURRENT
Basic Sidac Circuit
(a) Circuit (b) Waveforms
VBO R SIDAC VDC(IN) ≥ VB0
IL
C
Figure 9.15
VC
VC
Rmax ≤
VIN - VBO IBO
Rmin ≥
VIN - VTM IH (MIN)
t RL
IL
t
Relaxation oscillator Using a Sidac
INPUT VOLTAGE
VCE MONITOR
0V
tw ≈ 3 ms (See Note A)
(See Note B)
2N6127 (or equivalent)
INPUT
RBB1 = 150Ω
100 mH TIP-47
5V COLLECTOR CURRENT 0.63 A
tw 100 mS
0 50Ω
RBB2 = 100Ω
50Ω
+ VBB2 =0 VBB1 =10 V
+ VCC = 20 V
-
RS = 0.1 Ω
IC MONITOR
SIDAC VBO
COLLECTOR VOLTAGE 10 V
VCE(sat)
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM = 0.63A. NOTE B: Sidac (or Diac or series of Diacs) chosen so that V BO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.
Figure 9.16
SIDAC
Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements