SIDAC SIDAC. Z ibo Seno Electronic Engineering Co., Ltd. ( Volts)

Z ibo Seno Electronic Engineering Co., Ltd. SIDAC DO-15 Axial Lead DO-214AA Surface Mount TO-202AB Type 1 Do not use mounting tab or center lead,...
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Z ibo Seno Electronic Engineering Co., Ltd.

SIDAC

DO-15 Axial Lead

DO-214AA Surface Mount

TO-202AB Type 1

Do not use mounting tab or center lead, electrically connected

SIDAC (95 - 330 Volts) 9

General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device. Teccor offers the complete voltage range (95-330) over three different packages: • Axial lead DO-15 (95-280 volts) •

Surface Mount DO-214AA (95-280 volts)



TO-202AB (190-330 volts)

Teccor’s Sidacs feature glass passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more information.

SIDAC

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Applications • • • • • • • • •

High voltage lamp ignitors Natural gas ignitors Gas oil ignitors High voltage power supplies Xenon ignitors Over voltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors

Features • • •

AC circuit oriented Glass-passivated junctions High surge current capability

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Electrical Specifications

SIDAC IT(RMS)

Part No.

Repetitive On-State Peak RMS Current Off-State TJ≤125°C Voltage 50/60Hz Sine Wave (7) (8)

Type

DO-15 G Package

TO-202AB DO-214AA F Package S Package See “Package Dimensions” section for variations.

Amps MAX

Volts MIN

VBO

IDRM

Breakover Voltage 50/60Hz Sine Wave (1)

IBO

Repetitive Breakover Peak Current Off-State 50/60Hz Current Sine Wave 50/60Hz Sine Wave V=VDRM

MIN

MAX

µAmps MAX

µAmps MAX

Volts

K105

K105

1.0

±90

95

113

5

10

K110

K110

1.0

±90

104

118

5

10

K120 K130

K120 K130

1.0 1.0

±90 ±90

110 120

125 138

5 5

10 10

K140

K140

1.0

±90

130

146

5

10

K150

K150

1.0

±90

140

170

5

10

1.0 1.0

±180 ±180

190 205

215 230

5 5

10 10

K200 K220

K200 K220

K200 K220

K240

K240

K240

K241 K250

K250 K300

1.0

±190

220

250

5

10

1.0 (10)

±190

220

250

5

10

1.0 1.0

±190 ±190

240 270

280 330

5 5

10 10

K250

General Notes

Electrical Specification Notes



All measurements are made at 60Hz with a resistive load at an ambient temperature of +25°C unless otherwise specified.



Storage temperature range (TS) is -65°C to +150°C.



The case (TC) or lead (TL) temperature is measured as shown on the dimensional outline drawings. See “Package Dimensions” section of this catalog.



Junction temperature range (TJ) is -40°C to +125°C.



Lead solder temperature is a maximum of +230°C for 10 seconds maximum; ≥ 1/16" (1.59mm) from case.

SIDAC

VDRM

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See Figure 9.6 for VBO change vs junction temperature. See Figure 9.7 for IBO vs junction temperature. See Figure 9.2 for IH vs case temperature. See Figure 9.14 for test circuit. See Figure 9.1 for more than one full cycle rating. RθJA for TO-202 Type 23 and Type 41 is 70°C/watt. TC ≤ 90°C for TO-92 Sidac and TC ≤ 105°C for TO-202 Sidacs. TL ≤ 100°C for DO-15X and TL ≤ 90°C for DO-214AA. (8) See Figure 9.15 for clarification of Sidac operation. (9) For best Sidac operation, the load impedance should be near or less than switching resistance. (10) Teccor's new, improved series of sidacs is designed to ensure goodcommutationathigherswitchingfrequencies asrequiredinignitor circuits for high intensity discharge (HID) lighting. A typical circuit for a metal halide lamp ignitor is shown in the schematic, Figure 9.3. With proper component selection this circuit will produce three pulses for ignition of Osram lamp types such as HQI-T70W, HQIT150W, and HQI-T250W which require a minimum of three pulses at 4kV magnitude and >1µs duration each at a minimum repetition rate of 3.3kHz. (1) (2) (3) (4) (5) (6) (7)

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Z ibo Seno Electronic Engineering Co., Ltd. SIDAC IH

VTM

ITSM

RS

Dynamic Holding Current 50/60Hz Sine Wave R = 100Ω (3) (4)

Peak On-State Voltage IT = 1 Amp

Peak One Cycle Surge Current 50/60Hz Sine Wave (Non-Repetitive) (5)

Switching Resistance

F

S

(V –V ) BO S = -------------------------------(I – I ) S BO

dv/dt

di/dt

Critical Critical Rate-of-Rise Rate-of-Rise of Off-State of Turn-off Voltage at Voltage at Rated VDRM 8kHz TJ ≤ 100°C

Critical Rate-of-Rise of On-State Current

50/60Hz Sine Wave (9)

Volts Max Package

mAmps

R

dVq/dt

Amps 60Hz

TYP

MAX

E

G

60

150

1.5

1.5

1.5

20

60 60

150 150

1.5 1.5

1.5 1.5

1.5 1.5

20 20

kΩ

Volts/µSec

Volts/µSec

Amps/µSec

MIN

MIN

MIN

TYP

16.7

0.1

20

1500

150

16.7 16.7

0.1 0.1

20 20

1500 1500

150 150

50Hz

S

60

150

1.5

1.5

1.5

20

16.7

0.1

20

1500

150

60

150

1.5

1.5

1.5

20

16.7

0.1

20

1500

150

60 60

150 150

1.5 1.5

1.5 1.5

1.5 1.5

20 20

16.7 16.7

0.1 0.1

20 20

1500 1500

150 150

3.0

60

150

1.5

1.5

3.0

1.5

20

16.7

0.1

20

1500

150

60

150

1.5

1.5

3.0

1.5

20

16.7

0.1

20

1500

150

60 60

150 150

1.5

1.5

3.0 3.0

1.5

20 20

16.7 16.7

2.0 0.1

42 20

1500 1500

150 150

60

150

20

16.7

0.1

20

1500

150

3.0

Peak Surge (Non-Repetitive) On-State Current [I(TSM)] - Amps

100 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature

40

20 10 8.0 6.0 BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE.

4.0

2.0 1.0 1.0

10

100

Surge Current Duration - Full Cycles

Figure 9.1

V-I Characteristics

Peak Surge Current vs Surge Current Duration

THERMAL RESISTANCE (STEADY STATE) RθJC [RθJA] °C/W (TYPICAL)

SIDAC

G

F (6)

S

18 [75]

7 [45]

30 [85]

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1000

Z ibo Seno Electronic Engineering Co., Ltd.

SIDAC

1.5

Ratio of

˚

IH IH(TC=25 C)

2.0

1.0

.5

0

-40

+25

-15

+65

+105

+125

Maximum Allowable Ambient Temperature (TA) - ˚C

Electrical Specifications 140

CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING

120

100

80

60

TO

TO

-2

02

DO

40

-2

02

TY

PE

-2

14

23

TY

PE

&

1

41

25 20

˚

Case Temperature (TC) - C

0

0.2

0.4

0.6

0.8

1.0

RMS On-State Current [IT(RMS)] - Amps

Figure 9.2

Normalized DC Holding Current vs Case/Lead Temperature

Figure 9.5

Maximum Allowable Ambient Temperature vs On-State Current

Percentage of VBO Change - %

+4 H.V. STEP-UP TRANSFORMER BALLAST

K2401F1

0.1 - 0.15 µF 220V/240V 50/60Hz

METAL HALIDE LAMP

5 - 6µH

5.6K - 8.2K 5W

0.22 - 0.33 µF

+2 0 -2 -4 -6 -8 -10 -12

+25

-40

-20

Typical Metal Halide Ignitor Circuit

Figure 9.6

Typical Metal Halide Ignitor Circuit

ITRM VBO Firing Current Waveform

No

n-R

ep

200

Re

ea

ted

pe

titi

100 80 60 40

on

f=1

f=5

to l/f

eq

ue

nc

z

00

f=1

Fr

0H

f=1

20

yf

=5

Hz

Hz TJ=125ºC Max

kH

z

kH

z

f=1

0k

2

+40

+60

+80

+100

+120 +140

Normalized V BO Change vs Junction Temperature

di/dt Limit Line

600 400

10 8 6 4

+20

Junction Temperature (TJ) - ˚C

Repetitive Peak Breakover Current (IBO) Multiplier

Repetitive Peak On-State Current (ITRM) - Amps

Figure 9.3

0

f=20

1 0.8 0.6 2 x 10-3

4

Hz

9 8 7 6 5 4

V=VBO

3 2

1 20

30

40

50

60

70

80

90

100

110 120 130

Junction Temperature (TJ) - C

˚

kHz

6 8

1 x 10-2

2

4

6 8

1 x 10-1

2

4 6 81

Pulse base width (to) - mSec. Figure 9.4

SIDAC

Repetitive Peak On-State Current (I TRM) vs Pulse Width at Various Frequencies

4 of 6

Figure 9.7

Normalized Repetitive Peak Breakover Current vs Junction Temperature

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Z ibo Seno Electronic Engineering Co., Ltd. SIDAC

9 TL =25˚C

Positive or Negative Instantaneous On-State Current (iT) - Amps

8

4.7 µF TO-92, DO-214AA & DO-15X "E", "S" and "G" Packages

7

-

10 µF

-

6

+

100V

4.7 kΩ

+

50V

K1200E SIDAC

½W

+ -

5 4

4.7 µF 100V

1.2 µF

200V

24 VAC 60 Hz

3 TO-202 "F" Package

2 1 0 0

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2 2.4

2.6

2.8

3.0

3.2

3.4

H.V. IGNITOR

3.6

Positive or Negative Instantaneous On-State Voltage (vT) - Volts

Figure 9.8

On-State Current vs On-State Voltage (Typical)

Ignitor Circuit (Low Voltage Input)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Figure 9.15

2.2 2.0 Average On-State Power Dissipation [PD(AV)] - Watts

Figure 9.11

BALLAST

BALLAST

1.8 1.6

TO-202 "F" Package

0.47µF 400V

SIDAC 1.4

3.3 KΩ

1.2

SIDAC LAMP

0.22µF 7.5 KΩ

LAMP

1.0 0.8

120 VAC 60 Hz

0.6

220 VAC 60 Hz 16 mH

"E", "S" & "G" Packages TO-92, DO-214AA & DO-15X

0.4 0.2 0

0.2

0.4

0.6

0.8

120 VAC

1.0

220 VAC

RMS On-State Current [IT(RMS)] - Amps

Figure 9.9

Power Dissipation (Typical) vs On-State Current

Figure 9.12 Typical High Pressure Sodium Lamp Firing Circuit

100Ω

SCR

SIDAC 2w

100-250 VAC 60 Hz

-

10 µF

XENON LAMP

+

250V

20 MΩ

+ 10 µF - 450V

100-250 VAC 60 Hz

120VAC 60Hz

K2200F1 4KV SIDAC

.01µF 400V

200400V TRIGGER TRANSFORMER 20:1

Figure 9.10 Comparison of Sidac vs SCR

SIDAC

Figure 9.13 Xenon Lamp Flashing Circuit

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SIDAC

Electrical Specifications

PUSH TO TEST S1

100-250 VAC 60 Hz

VBO

SWITCH TO TEST IN EACH DIRECTION

100 Ω 1%

VBO

IPK

DEVICE UNDER TEST

VBO 100-250 VAC 60 Hz

TRACE STOPS

IH

LOAD IH

IH

IH

S1

120-145 CONDUCTION ANGLE

˚

SCOPE INDICATIONS

SCOPE

Figure 9.14 Dynamic Holding Current Test Circuit for Sidacs

LOAD CURRENT

Figure 9.15 Basic Sidac Circuit

(a) Circuit (b) Waveforms

VBO R SIDAC VDC(IN) ≥ VB0

VC

VC

IL

C

Rmax ≤

VIN - VBO IBO

Rmin ≥

VIN - VTM IH (MIN)

t RL

IL

t

Figure 9.16 Relaxation oscillator Using a Sidac

INPUT VOLTAGE

VCE MONITOR

0V

tw ≈ 3 ms (See Note A)

(See Note B)

2N6127 (or equivalent)

INPUT

100 mH

RBB1 = 150Ω

TIP-47

5V COLLECTOR CURRENT 0.63 A

tw 100 mS

0 50Ω

RBB2 =

50Ω

100Ω + VBB2 =0

VBB1 =10 V

+ VCC = 20 V

RS = 0.1 Ω

-

IC MONITOR

SIDAC VBO

COLLECTOR VOLTAGE 10 V

VCE(sat)

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

NOTE A: Input pulse width is increased until ICM = 0.63A. NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.

Figure 9.17 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements

SIDAC

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