s Clock and Data Recovery Module

NS GM E038B Jun. 11, 2002 MOS43CM 10 Gb/s Clock and Data Recovery Module MOS43CM has a function of regenerating clock and data signals from NRZ data ...
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NS GM E038B Jun. 11, 2002

MOS43CM 10 Gb/s Clock and Data Recovery Module MOS43CM has a function of regenerating clock and data signals from NRZ data input signal of STM-64 or OC-192 (9.95328 Gb/s).

BLOCK DIAGRAM D-FF with phase comparator

Din

Din

Q ~ 50 Ω ~ -0.5 V

Q

65 Ω

CK PC OUT

LPF Power Divider

~ ~ ~

VCO

Cout ~ 50 Ω

APPLICATIONS Receiver terminals and regenerators for SDH/SONET (STM-64/OC-192) systems

FEATURES •Data Rate: •Data Output Rise Time (20~80%): •Data Output Fall Time (20~80%): •DC Coupled Data Output : •AC Coupled Clock Output: •Power Dissipation:

9.95328 Gb/s trQ = 40 ps (typ.) tfQ = 30 ps (typ.) VOH = 0.0 V, VOL = -0.9 V (typ.) VCamp = 0.9 Vpp (typ.) 4.4 W (typ.)

TIMING CHART Din Q Cout 1 / 12

MOS43CM PIN CONNECTION TABLE No.

NAME

FUNCTION

TERMINAL

1

Din

2

Cout

3

Q

Recovered Data Output

4

VSS

Power Supply (-3.5 V)

5

GND

Ground (0.0 V)

6

VF

7

GND

8

NEL Internal Use. (Open)

9

PC OUT GND

10

LDET

NEL Internal Use. (Open)

11

GND

12

DVref

13

GND

Ground (0.0 V) Data Input Reference Level Adjustor (Normally GND, 0.0 V) Ground (0.0 V)

Data input, AC Coupling SMA (Female)

Recovered Clock Output, AC Coupling

FC(1) Rag plate FC(1)

Power Supply (+15 V) Ground (0.0 V)

Rag plate FC(1)

Ground (0.0 V)

Rag plate FC(1) Rag plate FC(1) Rag plate

Note) (1) Feedthrough Capacitor Type EMI Filter

CONNECTION DIAGRAM (TOP VIEW)

1

Din

6 5

VF

7

4

V SS

8 9

LDET

11

DVref

13

10

PC OUT

12

Q

3

Cout

2

MOS43CM 10Gb/s Clock and Data Recov ery Module S/N MADE IN JAPAN

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MOS43CM ABSOLUTE MAXIMUM RATINGS SYMBOL

PARAMETER

RATING

VSS

Power Supply Voltage

-4.0 V ~ 0.0 V

VF

Power Supply Voltage

VDin

Applied Voltage at Din

DVref

Applied Voltage at DVref

0.0 V ~ +16.7 V power on power off < 1.4 Vpp < 1.3 Vpp -0.4 V ~ +0.4 V

Vout1 Vout2

Applied Voltage at Q, and PC OUT Applied Voltage at Cout

Tstor

Storage Temperature

-40℃ ~ +80℃

TMB

Module Bottom Temperature under Bias

0℃ ~ +80℃(1)

Applied voltage at LDET

0.0 V ~ +7.0 V

LDET

-1.75 V ~ +0.2 V < 1.4 Vpp

Note) (1) The module should be protected from condensation.

RECOMMENDED OPERATING CONDITIONS Pin Name

Operating Condition

VSS

min. –3.57 V, max. -3.43 V

VF

min. +14.7 V, max. +15.3 V

Din

Q

AC Coupling GND (0.0 V) Connect this pin to the neighboring rag plate. Terminate with 50 ohm to GND.

Cout

Terminate with 50 ohm to GND.

PC OUT

Open. NEL Internal Use.

LDET

Open. NEL Internal Use.

Operating Temperature

+5℃≦ TMB(1) ≦+70℃

DVref

Note) (1) The module should be protected from condensation.

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MOS43CM ELECTRICAL CHARACTERISTICS VSS = -3.57 to -3.43 V, VF = +14.7 to +15.3 V, GND = 0.0 V, DVref = 0.0V Input Sequence = PRBS 223-1(1), Input Data Rate = 9.95328 Gb/s±25ppm, Mark Ratio = 1/2, Bit Error Rate<10-12, TMB = +5℃ to +70℃ Related I/O

Din

Q

Q, Cout

SYMBOL

PARAMETER

VDmin

Minimum Input Voltage Amplitude

VDmax

Maximum Input Voltage Amplitude

1.2

VQOH

Output Voltage, High

-0.2

VQOL

Output Voltage, Low

VQamp

Output Voltage Amplitude

trQ tfQ JTOL(2)

Output Rise Time (20-80%) Output Fall Time (20-80%) Jitter Tolerance

tDC

Phase difference of Q to Cout Output Voltage Amplitude

VCamp Cout

Power Supply

(2)

JGEN

Jitter Generation

JTRN(2)

Jitter Transfer

Iss

Power Supply Current (VSS)

IF Pd

Power Supply Current (VF) Power Dissipation

Notes) (1) Pull-in operation is not guaranteed for 1,0,1,0... input signal pattern. (2) Vss = -3.5 V, VF = +15.0 V, TMB = 30℃ (3) Vss = -3.57 V, VF = +15.3 V

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MIN.

0.7

TYP.

MAX.

UNITS

0.06

0.15

Vpp Vpp

0.0

V

-0.9

-0.75

V

0.9

1.4

Vpp

40 50 30 45 See page 6

ps ps

18

43

68

ps

0.7

0.9

1.5

Vpp

≦ 0.1

UIpp

See page 6 0.7 0.13 4.4

1.0(3) (3)

0.20

(3)

6.7

A A W

MOS43CM DEFINITIONS OF trQ, tfQ , AND tDC 80%

Q

80%

20%

20% trQ

Cout

tfQ

tDC + 50%

OUTPUT WAVEFORMS (Examples) Conditions:

VSS = -3.5 V, VF = +15.0 V, GND = 0.0 V, DVref = 0.0V Din = 150 mVpp, Input Sequence = PRBS 223-1, Mark Ratio = 1/2, Data Rate = 9.95328 Gb/s, TMB = 30℃

500 mV/div.

Q

Cout

20 ps/div.

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MOS43CM JITTER PERFORMANCE Conditions:

VSS = -3.5 V, VF = +15.0 V, GND = 0.0 V, DVref = 0.0V Din = 0.15 Vpp, Input Sequence = PRBS 223-1, Mark Ratio = 1/2, Data Rate = 9.95328 Gb/s, TMB = 30℃

JITTER TOLERANCE MASK f1 = 2.4 kHz

f0 = 316 Hz

f2 = 24 kHz

Amplitude (UIpp)

15

f3 = 400 kHz 1.5

f4 = 4 MHz

-20 dB/dec

.15

f5 = 8 MHz

10

100

1k

10 k

100 k

1M

10 M

Frequency [Hz]

Jitter Ratio (dB)

JITTER TRANSFER MASK

Slope = -20 dB/ dec 0.1

316

8M Modul ation Freque ncy (H z)

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MOS43CM SAMPLE IMPLEMENTATION

E/O

10 Gb/s Modulator Driver Module

MC240-100A

Z0 = 50 Ω

1 D in

O/E Converter with Post/Limiting Amp.

65 Ω

Q

3

Cout

2

Z0 = 50 Ω MOS39A

~50 Ω ~-0.50 V ~50 Ω 50 Ω -0.4~-0.6 V ~200 kΩ

DVref -3.5 V +15 V

12 DVref 0.01 uF 4 VSS 0.01 uF 6 VF 0.01 uF

PCOUT

8 Open 1000 pF

LDET

10 1000 pF

GND

5, 7, 9, 11, 13

Note) Numbers represent pin numbers.

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Open

MOS43CM CASE DIMENSION (mm)

9.55±0.3

5.0 7.5

7.5

7.5

7.5

10.0

5.0

34.0

24.0

Vss

VF

PC OUT

LDET

12.0

DVref

11.4±2.0

5.0

5.0

1.7±0.2

Q

MOS43CM 10Gb/s Clock and Data Recov ery Module S/N MADE IN JAPAN

44.0

78.0

Din

Cout

2.0

1.3 max 2.0

2.0

5.0

5.0

40.0

MOS43CM S/N

Notes)

(1) Tolerance: (2) Material: (3) Surface:

±0.2 Aluminum Chemical Conversion Coatings on Aluminum (NIPPON PAINT CO., LTD.)

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MOS43CM SAMPLE MOUNTING (mm) MOUNTING TOP VIEW

64.0

36.0

Mother Board

MOUNTING SIDE VIEW

M2.0 SCREW for Heatsink

Module Bottom

Please attach a heatsink to this surface.

M2.0 SCREW for Mother Board 36.0

64.0

MOTHER BOARD

4-φ2.4

Unit: mm Tolerance: ±0.2

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MOS43CM HANDLING PRECAUTIONS BEFORE OPERATING THE GaAs/Si-Bipolar IC MODULES, PLEASE READ THIS HANDLING INSTRUCTION TO PREVENT DAMAGE FROM ELECTRIC SURGES SUCH AS POWER LINE LEAK AND ELECTROSTATIC DISCHARGE. 1. Determine the standard GND on the working desk. The Standard GND should be connected to the highest quality GND in the room. Connect commonly all of GND terminals of all the equipment to the standard GND on the working desk. The working desk should be conductive and should be connected to the standard GND. Connection cables are preferred to be as short as possible and as thick as possible. 2. Put on a conductive wrist–strap connected to the standard GND on the desk through a 1-Mohm resistor. 3.

Confirm that the voltages of all surrounding materials including human body which touch the modules are less than 0.2V. Please measure these voltages using an oscilloscope (Do not use DC and AC voltmeters).

4.

Make sure that there is no abnormal spike on the power supply voltage.

5.

Ground all soldering iron tips. Leak voltage should be less than 0.2V.

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MOS43CM Caution 1. In order to improve products and technology, specifications are subject to change without notice. 2. When using the products, be sure the latest information and specifications are used. 3. Circuit drawings etc. shall be provided for the purpose of information only on application examples not for actual installation of equipment. NTT Electronics Corp. shall not assume any liability for damage that may result from the use of these circuit drawings etc. NTT Electronics Corp. shall not assent to or guarantee any rights of execution for patent rights of the third parties and other rights that may be raised for use of these circuit drawings. 4. To make a design, the products shall be used within the assured ranges with respect to maximum ratings, voltage, and radiation. NTT Electronics Corp. shall not take any responsibility for damage caused by neglecting the assured values or improper usage. 5. Though NTT Electronics Corp. makes every effort to improve quality and reliability, there is a risk that failure or malfunction may occur in semiconductors. It is therefore necessary that the purchasers should take responsibility for making a design that allows the products to operate safely on equipment and systems without any direct threat to the human body and/or property, should such failures or malfunction occur. 6. NTT Electronics Corp.'s semiconductor device products are designed to be used with multimedia networks communication equipment and related measuring equipment. They have not been developed for such equipment that may affect people's lives. Those who intend to use the products for special purposes that may affect human life as a result of failure or malfunction in the equipment using the products or that require extremely high reliability (e.g. life support, aircraft and space rockets, control in nuclear power facilities, submarine relays, control of operations, etc.) shall contact NTT Electronics Corp. before using the products. NTT Electronics Corp. shall not assume any liability for damage that may occur during operation of the products without prior consultation. 7. This product is controlled under the 'Foreign Exchange and Foreign Trade Law'. In the case of exporting this product, it is requested that you take necessary procedures to obtain prior approval from the Japanese Minister of Economy, Trade and Industry. 8. Some of the products use GaAs (gallium arsenide). GaAs powder and vapor are dangerous for humans. Do not break, cut, crush or chemically destroy the products. To dispose of the products, follow the relevant regulations and laws; do not mix with general industrial waste and domestic garbage. 9. Any questions should be directed to the Sales Department of NTT Electronics Corp.

Copyright 2002 NTT Electronics Corp.

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MOS43CM

NTT Electronics Corporation reserves the right to make change in designs, specifications and other information at any time without prior notice. These products or technologies are subject to Japanese strategic restrictions.

NTT Electronics Corporation 1841-1, Tsuruma, Machida-shi, Tokyo, 194-0004, Japan Tel: +81-42-799-8537 Fax: +81-42-799-8534

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