Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34, BPW 34 S, BPW 34 SR
BPW 34
BPW 34 S
BPW 34 SR
Wesentliche Merkmale
Features
• Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • BPW 34 S/BPW 34 SR: geeignet für Reflow Löten
• Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 S/BPW 34 SR: suitable for reflow soldering
Anwendungen
Applications
• Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Fernsteuerungen • Industrieelektronik • „Messen/Steuern/Regeln“
• • • •
Photointerrupters IR remote controls Industrial electronics For control and drive circuits
Typ Type
Bestellnummer Ordering Code
Fotostrom, Ev=1000 lx, standard light A, VR = 5 V Photocurrent Ip (µA)
BPW 34
Q62702P0073
80 (≥50)
BPW 34 S
Q65110A1209
80 (≥50)
BPW 34 SR
Q65110A2701
80 (≥50)
2007-05-23
1
BPW 34, BPW 34 S, BPW 34 SR Grenzwerte Maximum Ratings Bezeichnung Parameter
Symbol Symbol
Wert Value
Einheit Unit
Betriebs- und Lagertemperatur Operating and storage temperature range
Top; Tstg
– 40 … + 100
°C
Sperrspannung Reverse voltage
VR
32
V
Verlustleistung, TA = 25 ° C Total power dissipation
Ptot
150
mW
Kennwerte (TA = 25 ° C, Normlicht A, T = 2856 K) Characteristics (TA = 25 ° C, standard light A, T = 2856 K) Bezeichnung Parameter
Symbol Symbol
Wert Value
Einheit Unit
Fotoempfindlichkeit, VR = 5 V Spectral sensitivity
S
80 (≥50)
nA/Ix
Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity
λ S max
850
nm
Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax
λ
400 … 1100
nm
Bestrahlungsempfindliche Fläche Radiant sensitive area
A
7.00
mm2
Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area
L× B
2.65 × 2.65
mm × mm
L× W
Halbwinkel Half angle
ϕ
± 60
Grad deg.
Dunkelstrom, VR = 10 V Dark current
IR
2 (≤30)
nA
Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity
Sλ
0.62
A/W
Quantenausbeute, λ = 850 nm Quantum yield
η
0.90
Electrons Photon
Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage
VO
365 (≥ 300)
mV
2007-05-23
2
BPW 34, BPW 34 S, BPW 34 SR Kennwerte (TA = 25 ° C, Normlicht A, T = 2856 K) Characteristics (TA = 25 ° C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter
Symbol Symbol
Wert Value
Einheit Unit
Kurzschlussstrom, Ev = 1000 Ix Short-circuit current
ISC
80
µA
Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr , tf
20
ns
Durchlassspannung, IF = 100 mA, E = 0 Forward voltage
VF
1.3
V
Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance
C0
72
pF
Temperaturkoeffizient von VO Temperature coefficient of VO
TCV
– 2.6
mV/K
Temperaturkoeffizient von ISC Temperature coefficient of ISC
TCI
0.18
%/K
Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm
NEP
4.1 × 10– 14
Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit
D*
6.6 × 1012
2007-05-23
3
W -----------Hz cm × Hz --------------------------W
BPW 34, BPW 34 S, BPW 34 SR Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev)
Relative Spectral Sensitivity Srel = f (λ) OHF00078
100
ΙP
S rel % 80
OHF01066
10 3 µA
10 4 mV VO
10 2
10 3 VO
OHF00958
160 mW Ptot 140 120 100
60 10 1
Total Power Dissipation Ptot = f (TA)
10 2
ΙP
40
80 60
10 0
10 1
-1
0
40
20 20 10
0 400 500 600 700 800 900 nm 1100 λ
10 0
Dark Current
10 10 3 lx 10 4 EV
10 2
Capacitance C = f (VR), f = 1 MHz, E = 0
IR = f (VR), E = 0 OHF00080
4000
ΙR
10 1
C
pA
0
20
40
60
80 ˚C 100 TA
Dark Current
IR = f (TA), VR = 10 V, E = 0 OHF00081
100
0
OHF00082
10 3
Ι R nA
pF 80
10 2
3000
70 60 2000
10 1
50 40 30
10 0
1000
20 10 0
0
5
10
15
V VR
0 -2 10
20
10 -1
10 0
10 1
V 10 2 VR
Directional Characteristics Srel = f (ϕ) 40
30
20
10
ϕ
0
OHF01402
1.0
50 0.8 60
0.6
70
0.4
80
0.2 0
90
100
1.0
2007-05-23
0.8
0.6
0.4
0
20
40
60
80
100
4
120
10 -1
0
20
40
60
80 ˚C 100 TA
BPW 34, BPW 34 S, BPW 34 SR Maßzeichnung Package Outlines BPW 34
5.4 (0.213)
4.3 (0.169)
Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075)
3.7 (0.146)
3.5 (0.138) 3.0 (0.118)
1.2 (0.047) 0.7 (0.028)
0.8 (0.031) 0.6 (0.024)
4.9 (0.193) 4.5 (0.177)
0.6 (0.024) 0.4 (0.016)
Cathode marking 4.0 (0.157)
0.6 (0.024)
0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055)
0 ... 5˚
5.08 (0.200) spacing
Photosensitive area 2.65 (0.104) x 2.65 (0.104)
GEOY6643
BPW 34 S
0.3 (0.012)
1.1 (0.043) 0.9 (0.035)
6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169)
0...5 ˚ 0.2 (0.008) 0.1 (0.004)
1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)
Chip position
0.9 (0.035) 0.7 (0.028)
1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)
1.8 (0.071) ±0.2 (0.008)
Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)
GEOY6863
Maße in mm (inch) / Dimensions in mm (inch). 2007-05-23
5
BPW 34, BPW 34 S, BPW 34 SR
BPW 34 SR
0...5
˚ 0.2 (0.008) 0.1 (0.004)
1.1 (0.043) 0.9 (0.035)
0.3 (0.012)
1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)
Chip position
6.7 (0.264) 6.2 (0.244)
1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)
1.8 (0.071) ±0.2 (0.008)
0.9 (0.035) 0.7 (0.028)
4.5 (0.177) 4.3 (0.169)
Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)
GEOY6916
Maße in mm (inch) / Dimensions in mm (inch).
2007-05-23
6
BPW 34, BPW 34 S, BPW 34 SR Lötbedingungen Soldering Conditions
BPW 34 S BPW 34 SR
Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering
OHLA0687
300
Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile
˚C
T
(nach J-STD-020C) (acc. to J-STD-020C)
255 ˚C 240 ˚C
250
˚C 260 ˚C +0 -5 ˚C 245 ˚C ±5 ˚C ˚C 235 ˚C +5 -0 ˚C
217 ˚C 10 s min
200 30 s max
Ramp Down 6 K/s (max)
150 100 s max
120 s max 100 Ramp Up 3 K/s (max)
50
25 ˚C 0 0
50
100
150
200
250
s
300
t
Wellenlöten (TTW) TTW Soldering
BPW 34
(nach CECC 00802) (acc. to CECC 00802) OHLY0598
300 C T
10 s
250
Normalkurve standard curve
235 C ... 260 C
Grenzkurven limit curves
2. Welle 2. wave 200 1. Welle 1. wave 150
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C 100 2 K/s 50
Zwangskühlung forced cooling
0 0
50
100
150
200 t
2007-05-23
7
s
250
BPW 34, BPW 34 S, BPW 34 SR
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-05-23
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