Physics of Semiconductor Devices
EDITOR
Krishan Lai
UB/TIB Hannover 111 897 173
Narosa Publishing House New Delhi
Madras
Bombay
Calcutta
89
CONTENTS Preface
m
DEVICE PHYSICS OF HETEROSTRUCTURES AND QUANTUM DEVICES 1.
Stabilty and performance of GeSi heterostructures bipolar transistors S. C. Jain, A. H. Harker and A .M. Stoneham
"
Device models for HBT circuit simulation D. L. Pulfrey
10
3.
Carrier transport parameters in strained SiGe alloys A. Nathan and T. Manku
I8
4.
Two-dimensional carrier transport in Si/SiGe modulation doped structures grown by RTCVD V. Venkataraman, C. W. Liu and J. C. Strum
2.
5.
6.
7.
8.
9.
10.
Quantum derivation of the mean forces , acting in non-uniform or graded structures, and of transport expressions using Ehrenfest's canonical relations C. M. Van Vliet, J.J Nainaparampil and A.H. Marshak Competing hot electron resistant technologies in submicron arena W.S. Khokle, P.N. Andhare, R .K. Nahar, Suresh Chandra, 0. P. Wadhawan and P. D. Vyas
26
29
""
High-mobility p-channel MOSFET on strained Si Deepak K. Nayak
*°
N-channel MOSFET model for high temperature applications K. S. Yadav, M. S. Tyagi and W. S. Khokle
"2
Effect of substrate temperature and laser power on recrystallization of polysilicon SOI films for CMOS circuits Sudhir Chandra, S. C. Rustagi, Ami Chand and G. Bose On measurement of threshold voltage and mobility in polysilicon thin film transistors S. C. Rustagi, Ami Chand and Sudhir Chandra
""
"°
11.
Effect of post-implant annealing on MOSFET parameters in SIMOX structures Ami Chand, Sudhir Chandra and S. C. Rustagi
g2
12.
A simplified approach to failure analysis of DRAMS Sharon O'Boyle, Shobha Gupta
65
13.
Early voltage of parasitic lateral bipolar transistor and its effect on latch-up behavior in VLSI CMOS technology A. Bandyopadhyay, A. B. Bhattacharyya, P. R. Verma, R. Kumar and M. J. Zarabi
68
14.
Accelerated life testing: a study of the validity of theoretical models Jiju Antony, John G. Roche and Shobha Gupta
71
15.
Drain induced barrier lowering in short channel NMOS devices S. Gurunarayanan, R.Mehrotra and Chandrashekhar
76
16.
Optimization of tub design in twin-well based CMOS process J. N. Roy and Vinod Chaku
77
17.
Growth and characterisation of III-V epitaxial layers by MOVPE S. K. Agarwal, M. V. G. Padmavati and R. Tyagi
80
18.
Variation of uniformity of MESFET s threshold voltage and mapping of EL2 level using photoluminescence imaging P. Santhana Raghavan, J. Arokiaraj, J. Kumar and P. Ramasamy
88
19.
Device characteristics of a superconducting field effect transistor using AlGaAs/GaAs 2DEG Seongjae Lee, Kyoung Wan Park, Mincheol Shin, and El-Hang Lee
91
20.
New constructions of phototransformers on (Al, Ga) As heterostructures V. Dorogan, V. Kosyak, T. Vieru
94
21.
Computer aided study of excess noise in GaAs APD with differnt crystal orientations J. K. Miflhra, G. N. Dash and S. P. Pati
97
22.
23.
Semiconductor quantum heterostructures : will they be useful for future lightwave communications and information technology? El-Hang (Howard) Lee Quantum waveguide structures and discontinuities A, weisshaar, S. M. Goodnick, V. K. Tripathi, J. C. Wu and M. N. Wybourne
24.
Nanoelectronic devices and integrated circuits based on effect of resonant tunneling V. G. Mokerov, B. K. Medvedev, B. G. Nalbandov, S. S. Shmelev, D. Posyjanski
25.
Modelling of excitonic electrorefraction in multiple quantum wells and design of a directional coupler with low voltage length product P. K. Basu and A. Bandyopadhyay
26.
Growth and characterisation of GaAs/GaAlAs single quantum well laser structure by metalorganic vapour phase epitaxy R. Tyagi, M. V. G. Padmavati, M. Bal, G. D. Sharda, A. Dhaul, R. K. Purohit and S. K. Agarwal
27.
Bang-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100) D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki
l^O
118
136
ADVANCED DISCRETE DEVICES 1.
2.
3.
4.
Ideal SIT; ballistic device Jun-Ichi Nishizawa and Ken Suto Electronic interference effects in the ballistic conductivity of one- and two-dimensional structures on the basis of quantum wells V. A. Petrov and I. M. Sandier Physics based limitations of conventional Gummel-Poon SPICE CAD models for advanced bipolar transistors D. J. Roulston Intense light emission in diffused porus silicon junctions V. K. Jain, Amita Gupta, Adarsh Kumar, G. K. Singhal and Vikram Kumar
^
j.48
151
^gy
5.
Light emitting diodes of porus silicon Amita Gupta, V. K. Jain, Adarsh Kumar, G. K. Singhal, D. S. Ahuja, 0. P. Arora, P. P. Puri and Mahender Pal
164
6.
Multifunctional photosensor for image processing on the basis of photoelectric structures 'with memory S. L. Vinogradov, V. V. Vologin and V. E. Shubin
Igg
7.
A novel uncooled MCT detector for broad range IR application R. K. Sharma, D. Verma, A. Dhar, J. P. Singh , V.K. Singh and B. B. Sharma
\7\
8.
Blocked impurity band IR dectectors A. N. Chandorkar and Sudha V. Kolluri
173
9.
High performance InGaAs/InP PIN phot ode tec tors using magnetron sputtered SiO2 as diffusion mask 0. P. Daga, D. C. Dumka, J. K. Singh, H. S. Kothari, S. Ahmad and B. R. Singh
186
10.
Grided Pd/TiOs MOS capacitor for organic vapours Lallan Yadava, R. Dwivedi and S. K. Srivastava
Igg
11.
Material prepration for semiconductor gas sensor application M. H. Madhusudhana Reddy and A. N. Chandorkar
192
12.
A smart semiconductor silicon pressure sensor V. R. Singh, Shikha Bhatnagar, Sunita Verma and Ranvir Singh
195
13.
Band splitting in hi-frequency GaAs DDRs due to diffusion current G. N. Dash, S. P. Pati and A K. Panda
igg
14.
Composite YjOj/SiO, dielectric based metalinsulator-semiconductor diodes for high density memory device application R. N. Sharma and A.C. Rastogi
201
15.
GaAs based analog to digital converter for GHz applications Harsh, Samudra Gupta, Meena Mishra, R. K. Purohit and Ishwar Chandra
204
CHARACTERIZATION OF SEMICONDUCTING MATERIALS, UNIT PROCESSES AND DEVICES 1.
High resolution X-ray diffraction characterization of process induced defects in semiconductor crystals Krishan Lai
2.
Conditions for improving the properties of the Si/SiO2 system by F-implantation P. Balk, V. V. Afanas'ev and J. M. M. de Nijs
3.
Interaction of atomic hydrogen with defects in silicon silicoi processing S. Ashok
4.
Ultrathin bond and etchback silicon on insulator (BESOI) for CMOS applications Subramanian S. Iyer, Philip M. Pitner, Manu J. Tejwani and Thomas 0. Sedgwick
5.
Characterization of semiconductor devices via line-modified asymmytric crystal topography W. T. Beard, Jr., W. G. Hutchison, R. W. Armstrong, X. J. Zhang, J. L. Fitz and J .K. Whisnant
6.
Double crystal X-ray topography characterization of an electrical bias induced stress variation in nMOSFETs David I Ma, Syed B. Qadri, Daniel McCarthy and Martin C. Peckerar
7.
Spectroscopic elipsometric studies of metal silicide thin films V. D. Vankar and G. Srinivas
8.
Studies on the conductivity of heavily doped LPCVD polysilicon films K. N. Bhat and P. Venugopal
9.
Preparation and characterization of high purity chemicals used in fabrication of semiconductor devices P. K. Gupta, A.K. Agrawal, R. Ramachandran, Chetna Kaw, Sunita Ganju, A.K. Sarkar and Krishan Lai
219
232
271
10.
EPR Studies of paramagnetic defects in semiconducting materials S.K. Gupta
2g7
11.
Inductively coupled plasma optical emission spectrometric method for determination of arsenic in ppb range in high purity silicon P. K. Gupta, A.K. Agrawal, Chetna Kaw and Krishan Lai
095
12.
Indirect determination of traces of boron in high purity silicon by Zeeman graphite furnace atomic absorption spectrophotometer Ajit K. Sarkar, N. Singh, D. C. Parashar and Krishan Lai
.„.
13.
An extraction method for determination of phosphorus by spectrophotometry in high purity materials used in semi-conductor technology R. Ramachandran, Deepa Bhatnagar and D. C. Parashar
„..
14.
Evaluation of trace quantities of moisture in photoresists and chemicals used in processing of semiconductor devices P. K. Gupta, A. K. Agrawal, Chetna Kaw, Sunita Ganju and Krishan Lai
„„.
15.
Polarised specular reflectance and transmittance measurements of silicon and germanium in the infrared region D. Gupta and S. P. Varma
„_„
16.
Energy gap studies by reflection spectra T. P. Sharma, Sachin Kr. Sharma and Ciby Thomas T.
OIQ
17.
Methods to restore the surface properties of silicon subjected to RIE V. K. Bhasin, K. Remashan, P. R. S. Rao and K. N. Bhat
„-.„
18.
Dry cleaning of silicon wafers with CF4/H2 Plasma H. N. Upadhyay, R. K. Chanana, R. Dwivedi and S. K. Srivastava
19.
Characterization of defects generated by BF2* implantation in silicon single crystals by high resolution X-ray diffraction G.Bhagavannarayana , Krishan Lai
31g
„.„
20.
Kelvin probe setup for semiconductor surface work function studies C. Suresh Kumar, A. Subrahmanyam and J. Majhi
322
21.
Formation of the oxide films on silicon in RF oxygen plasma B.C. Chakravarty
325
22.
Optimization of growth conditions of dry thermal oxides for radiation hard applications M. H. Madhusudhana Reddy and D. K. Sharma
32g
23.
Radiation performance of reoxidized nitrided pyrogenic oxide as a field dielectric S. S. Moharir and R. Lai
go,
24.
Low temperature deposition of amorphous silicon nitride thin films by photo-CVD process V. K. Rathi, Vijay Shanker and O.P. Agnihotri
33^
25.
Characterization of silicon wafers with thin nitride-oxide films regarding crystalline perfection and biaxial stress S.K. Haider, Vyay Kumar, Krishan Lai, P. Suryanarayana, B.B. Dixit and P.D. Vyas
33-7
26.
Study of biaxial stress and crystalline perfection of device quality silicon wafers w i t h photo-CVD grown thin oxide and oxinitride deposits S.K. Haider, Vijay Kumar, Krishan Lai, Vipan Kumar and O.P. Agnihotri
34Q
27.
Physical model for electron trap generation in the MOS oxides stressed at high fields R. M. Patrikar, R. Lai and J. Vasi
3^3
28.
Study of hole trapping in thin silicon dioxide under radiation environment B.M. Deb and A. N. Chandorkar
34g
29.
Trap generation upon irradiation in reoxidized nitrided oxide gate dielectrics A. Mallik, V. Ramgopal Rao, AN. Chandorkar and J. Vasi
35Q
30.
Hole traps in reoxidized nitrided oxide gate dielectrics A. Mallik, J. Vasi and A. N. Chandorkar
3g^
31.
A new technique for reduction of bending of device quality silicon single crystals by passage of electric current Krishan Lai, S. Niranjana N. Goswami and Peter Thoma
„__
32.
Anomalous hysteresis in electrical conduction of amorphous BaTiO3 films deposited by RPIB technique S.T. Lakshmikumar, W. T. Liu and T -M. Lu
„„.
33.
A study of boron doped polysilicon gate capacitance Suresh Chandra and P.N. Andhare
.„.
34.
Temperature dependance of minority carrier lifetime in some polysilicon V. Subramanian and J. Sobhanadri
„„„
35.
Phosphorus dopant profiles and diffusion coefficients in silicon -when diffused through LPCVD polysilicon layer A. V. N. Tilak and K.N. Bhat
„..
36.
Determination of biaxial stress in sUicon single crystals with thin molybdenum silicide films b y using high resolution X-ray diffraction Krishan Lai, Reshmi Mitra, V.D. Vankar and G. Srinivas
_„„
37.
Spectroscopic ellipsometry and high resolution X-ray diffraction studies of microstructural pecularities on molybdenum silicide thin films G. Srinivas, Reshmi Mitra, V.D. Vankar and Krishan Lai
„„
38.
Process and material properties of magnetron sputtered W and reaction formed
___
Awatar Singh and Krishan Lai 39.
On the self limiting thickness of CVD tungsten films produced by silicon reduction ofWF e K.M. K. Srivatsa, B. B. Dixit, V.P. Deshwal, P. Suryanarayana, G. Eranna, B.C. Joshi, R. S. Sheoran, P.D. Vyas and W.S. Khokle
„„
40.
Analytical approach to determine specific contact resistance B.D. Tyagi
„_ .
41.
Contact resistance improvement by barrier metal and salicide technology J.N. Roy, D.K. Datta, R.Rajagopal, Vinod Chaku and D.Dev
387
42.
Analysis of interconnect delay for VLSI metallization R.K. Nahar, P.D. Vyas and R. Shekhawat
390
43.
Molybdenum nitride thin film diffusion barrier for silicon metallization Anitha V.P., Nitin G. Patil and S.Major
393
44.
Deep donor (DX) defects in III-V ternary alloys J.C. Bourgoin and M. Zazoui
396
45.
Photoluminescence studies of defects in semiconductors Vikram Kumar
402
46.
Laser deposition of dielectrics, semiconductors and conductors on GaAs and InP D.N. Bose and S. Ghosh
409
47.
A synoptic study of the physical constants of III-V compounds B.R. Nag
416
48.
The role of unprecracked arsine and monoethylarsine in growing low carbon GaAs epilayers by CBE using trimethylgallium and triethylgallium Seong-Ju Park, Jeong-Rae Ro, Jae-Ki Sim and ElHang Lee
424
49.
High resolution X-ray diffraction study of cellular structure in LEC grown gallium arsenide crystals and biaxial stress induced by multilayer metallization S. Niranjana N. Goswami, Krishan Lai, Joachim Wurfl and H.L. Hartnagel
427
50.
Deep level due to Si-related DX center in heavily doped ion-implanted GaAs Subhasis Ghosh and Vikram Kumar
431
51.
Application of modified spreading resistance technique to profile GaAs epitaxial layers Harsh, S.K. Agarwal and M. Hussain
434
xui
52.
On the intracenter transitions in Fe doped in GaAs and InP Harish Bahadur
^gg
53.
New peculiarities of the conductivity compensation in semi-insulating InP
44^
Calin M.V., Pyshnaya N.B., Tiginyanu I.M. and Ureaki V.V. 54.
A novel technique for suppressing
A A,
phosphorus loss from InP surface during plasma hydrogenation Sathya Balasubramanian and Vikram Kumar 55.
X-ray photoelectron spectroscopy (XPS) studies of InP surface P. Manivannan and A. Subrahmanyam
56.
Photoluminiscence studies and fabrication of metal-insultator-semiconductor structure on LEC grown InP J. Arokiaraj, S. Arulkumaran, P. Santhana Raghavan, M. Udhaya Sankar, J. Kumar and P. Ramasamy
57.
Mechanism of self diffusion in InSb single crystals
447
453
Anjali Rastogi and K. V. Reddy 58.
Effect of vacuum and Cd-annealing on the surface morphology and deep level photoluminiscence of bulk undoped CdTe Suma Gurumurthy, H. L. Bhat, A. K. Sreedhar, R.K. Bagai and Vikram Kumar
59.
Reduction of the residual acceptor concentrations in GaSb
>gc
i.n
P.S. Dutta, H.L. Bhat, K.S. Sangunni and Vikram Kumar 60.
A novel spectroscopic technique for determining capture cross-section activation energy of Si-related DX center in AlxGa, ,As Subhasis Ghosh and Vikram Kumar
61.
Nucleation studies of InGaAs LPE on InP R. Jothilingam, R. Dhanasekaran and P. Ramasamy
^go
46g
62.
63.
Electrical and photoluminescence studies of InGaAs/InP grown by chloride vapour phase epitaxy technique Ramjay Pal, R.K. Purohit, S.K. Agarwal and D.N. Bose Deep level transient spectroscopy studies on Dy gettered I n , ^ Ga^^Ag D. Pal and D.N. Bose
64.
Morphological and compositional studies of oval defects in AlGaAs through Raman spectroscopy P.S. Dobal, P.K. Khulbe, H.D. Bist, S.K. Mehta and R.K. Jain
65.
Photoluminiscence studies on hydrogenated GaAlAs grown by MBE S.K. Mehta, T. Srinivasan, G.C. Dubey and R.K. Jain
66. 67.
Anodic sulphide films on g ^ ^ V.K. Gandotra and S.C. Gupta
477
4S0
Electron optical studies on thin films of the semiconducting alloy Ga6Se20Te711 V. Damodara Das, K. S. Raju and A, Bhaskaran
68.
Electrical resistance variation with temperature and thickness and Seebeck coefficient in vacuum-deposited thin films of 1% Pb doped PbSeojjTeoj, alloy V. Damodara Das, B. Sivagnanam and P. Gopal Ganesan
69.
Size dependence of electrical resistivity and thermoelectric power in Pbo^Sn^Te thin films V. Damodara Das and C. Bahuleyan
70.
Preparation of Pb,.,Eu,Se thin films by coevaporation technique P. C. Sharma, U.C. Sinha and A. N. Chandorkar
71.
^71
Electrical resistance variation and optical absorption in 2% indium doped CdSe(0,5)Te(0.5) thin films V. Damodara Das, K. Rajesh Nayak and Laxmikant Damodare
XV
***"
^92
496
72.
Grain boundary effect in polycrystalline CuInSe2 films R. Pal, K.K. Chattopadhyay, S. Chaudhuri and A.K. Pal
499
73.
Defect density in 75 MeV Ni ion bombarded amorphous semiconductors K.L. Bhatia, P. Singh, Nawal Kishore and M. Singh
502
74.
On the validity of Vegard's law in selenium tellurium films S.K. Sharma, Sachin Kumar Sharma and T.P. Sharma and S.C.K. Mishra
505
75.
Structure, dielectric, conduction and breakdown studies on amorphous Ge^Se,., thin films N. Balasundaram, D. Mangalaraj, Sa. K. Narayandass and C. Balasubramanian
508
76.
Study on aluminium - antimony alloy films Taminder Singh, Surinder Kaur and R.K. Bedi
5H
77.
Identification of defects induced on thermal oxidation of Cu j.9Se thin films S.K. Gupta and G.K. Padam
514
78.
X-ray study of alpha GajSe3 M.Y. Khan and Momeen
517
79.
Structural, optical and electrical properties of cadmium oxide films deposited by spray pyrolysis K. Gurumurugan, D. Mangalaraj, Sa. K. Narayandass and C. Balasubramanian
520
80.
Diamond films produced by D. C. plasma decomposition of CO2+H2 K.K. Chattopadhyay, S. Chaudhuri and A.K. Pal
523
81.
Hot carrier and Fowler-Nordheim stress in sub-micron MOS transistors C. R. Viswanathan
526
82.
Microstructure and composition of semiconductor materials and efficiency of thin film solar cells M.S. Saidov
534
xvi
83.
The improvement of quality and reliability of semiconductor devices by pulse photon annealing and stimulated diffusion in semiconductors T. Shishiyanu, I.K. Sinishchuk, V.P. Shontya, V.V. Cheban and S.T. Shishiyanu
541
84.
CAD tool development for phase-shift mask design B.P. Mathur and K. I. Arshak
551
85.
Properties of Cu and In selenide semiconductor thin films for solar cell application prepared by a new electrochemical selenization technique Archana Garg, K.S. Balakrishnan, A.C. Rastogi, Rashmi and R.H. Bhawalkar
554
86.
Electrical properties of mp*n Schottky diodes fabricated on silicon samples treated with H, plasma B.P. Rai, R. Dwivedi and S.K. Srivastava
557
87.
Physical nature and behaviour of spectral reflectivity of Si-TiOx system on silicon solar cells
5gl
Mohan Lai and Marek Lipinski 88.
Electrical properties of GaSb Schottky diodes P.S. Dutta, H.L. Bhat, K.S. Sangunni and Vikram Kumar
554
89.
Study of the effect of air corona stress on metal-oxide-semiconductor capacitors Ila Prasad and R.S. Srivastava
557
Semiconductive polymer thin films for
57O
90.
electronic applications S.C.K. Misra and Subhas Chandra 91.
Rise and decay time kinetics of anthraquinone derivatives H.O. Yadav, P.K.N. Raghavan and T.S. Varadarajan
573
92.
Characterization of chloro alumium phthalocyanine - metal contact by I-V and CV methods G.D. Sharma
575
xvu
93.
Electron transport mechanisms in amorphous silicon Schottky barrier devices Md. N. Islam, Y.N. Mohapatra, S.C. Agarwal and Satyendra Kumar
580
94.
Effect of in-situ thermal relaxation on optoelectronic properties of hydrogenated amorphous silicon film prepared in a multizone UHV plasma CVD system O.S. Panwar, P.N. Dixit, B.S. Satyanarayan and R. Bhattacharyya
583
95.
Subbandgap absorption studies on high rate deposited a-Si : H films C. Mukherjee, Tanay Seth, C. Anandan, P.N. Dixit and R. Bhattacharya
586
96.
Effect of lithium doping on sub band gap absorption in hydrogenated amorphous silicon S.K. Tripathi, Anil K. Sinha, S. Kumar and S.C. Agarwal
589
97.
Thermally induced metastability in amorphous silicon S. M. Pietruszko
59!}
98.
Metastabilities in undoped a-Si, xGe,: H alloys Anil K. Sinha, P. Agarwal, S. Kumar , S.C. Agarwal, P.N. Dixit, O.S. Panwar, Tanay Seth and R. Bhattacharya
595
99.
Thermal equilibrium metastability studies in n-type a-Si : H under illumination Sushil Kumar, P.N. Dixit, O.S. Panwar, Tanay Seth and R. Bhattacharyya
598
100.
Evidence for tailstates assisted tunnelling currents in Schottky barriers on amorphous silicon C. Anandan
601
101.
Effect of quenching on thermo power of a-Si : H Pratima Agarwal, P. Manoravi, P.N. Dixit, S. Kumar and S.C. Agarwal
604
102.
Characterization of a-Si : H / a-C : H multilayer structure P.N. Dixit, Sushil Kumar and R. Bhattacharyya
607
FUTURISTIC DEVICES 1.
Synchrotron X-ray diffraction from nanocrystalline semiconductors under pressure Syed B. Qadri and Earl. F. Skelton
613
2.
Lattice-mismatched epitaxy'materials and device aspects A. Schlachetzki
621
3.
Phenomenon of resist debris formation in electron beam lithography and the fabrication of arrays of closely spaced metal quantum dots P.R. Deshmukh, M. Singh, K.J. Rangra, P.D. Vyas, W.S. Khokle and B.B. Pal
629
4.
Modelling of resonant tunneling effects in laterally confined heterostructures at nanometer scales 0. Vanbesien, D. Wojciechowski, V. Sadaune and D. Lippens
637
AUTHOR INDEX
641
