VS-ST1200C..K Series www.vishay.com

Vishay Semiconductors

Phase Control Thyristors (Hockey PUK Version), 1650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS A-24 (K-PUK)

• DC motor controls • Controlled DC power supplies

PRODUCT SUMMARY Package

A-24 (K-PUK)

Diode variation

Single SCR

IT(AV)

1650 A

VDRM/VRRM

1200 V, 1400 V, 1600 V, 1800 V, 2000 V

VTM

1.73 V

IGT

100 mA

TJ

-40 °C to 125 °C

• AC controllers        

MAJOR RATINGS AND CHARACTERISTICS PARAMETER

TEST CONDITIONS

IT(AV)

Ths

IT(RMS)

Ths

ITSM I2t

A

55

°C

3080

A

25

°C

30 500

60 Hz

32 000

50 Hz

4651

60 Hz

4250

Typical

TJ

UNITS

1650

50 Hz

VDRM/VRRM tq

VALUES

A kA2s

1200 to 2000

V

200

μs

-40 to 125

°C

ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER

VS-ST1200C..K

VOLTAGE CODE

VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V

VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V

12

1200

1300

14

1400

1500

16

1600

1700

18

1800

1900

20

2000

2100

IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA

100

Revision: 09-Jan-15 Document Number: 94394 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS PARAMETER

SYMBOL

Maximum average on-state current at heatsink temperature Maximum RMS on-state current

IT(AV) IT(RMS)

TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms

Maximum peak, one-cycle non-repetitive surge current

ITSM

t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms

Maximum I2t for fusing

I2t

t = 8.3 ms t = 10 ms

Maximum

for fusing

I2t

A

55 (85)

°C

3080

No voltage reapplied

30 500

100 % VRRM  reapplied

25 700

No voltage reapplied

32 000

Sinusoidal half wave, initial TJ = TJ maximum

4651 4250 3300

t = 0.1 ms to 10 ms, no voltage reapplied

46 510

(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum

0.91

High level value of threshold voltage

VT(TO)2

(I >  x IT(AV)), TJ = TJ maximum

1.01

Low level value of on-state slope resistance

rt1

(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum

0.21

High level value of on-state slope resistance

rt2

(I >  x IT(AV)), TJ = TJ maximum

0.19

Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse

1.73

VTM IH

Typical latching current

IL

TJ = 25 °C, anode supply 12 V resistive load

kA2s

3000

VT(TO)1

Maximum holding current

A

26 900

Low level value of threshold voltage

Maximum on-state voltage

UNITS

1650 (700)

100 % VRRM  reapplied

t = 8.3 ms I2t

VALUES

600 1000

kA2s V

m V mA

SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current

SYMBOL dI/dt

TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM

VALUES

UNITS

1000

A/μs

Typical delay time

td

Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C

1.9

Typical turn-off time

tq

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs

200

SYMBOL

TEST CONDITIONS

VALUES

UNITS

μs

BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage

dV/dt

TJ = TJ maximum linear to 80 % rated VDRM

500

V/μs

Maximum peak reverse and  off-state leakage current

IRRM, IDRM

TJ = TJ maximum, rated VDRM/VRRM applied

100

mA

Revision: 09-Jan-15 Document Number: 94394 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-ST1200C..K Series www.vishay.com

Vishay Semiconductors

TRIGGERING PARAMETER

SYMBOL

Maximum peak gate power

PGM

Maximum average gate power

PG(AV)

Maximum peak positive gate current

IGM

Maximum peak positive gate voltage

+ VGM

Maximum peak negative gate voltage

- VGM

VALUES

TEST CONDITIONS

TYP.

TJ = TJ maximum, tp  5 ms

16

TJ = TJ maximum, f = 50 Hz, d% = 50

3

VGT

DC gate voltage not to trigger

VGD

V -

100

200

50

-

1.4

-

TJ = 25 °C

1.1

3.0

TJ = 125 °C

0.9

-

Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied

TJ = -40 °C

IGD

A

20

200

TJ = 25 °C

IGT

DC gate current not to trigger

W

5.0

TJ = 125 °C DC gate voltage required to trigger

UNITS

3.0 TJ = TJ maximum, tp  5 ms TJ = -40 °C

DC gate current required to trigger

MAX.

TJ = TJ maximum

Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied

mA

V

10

mA

0.25

V

VALUES

UNITS

THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER

SYMBOL

Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink

TJ

-40 to 125

TStg

-40 to 150

RthJ-hs

Maximum thermal resistance, case to heatsink

TEST CONDITIONS

RthC-hs

DC operation single side cooled

0.0.42

DC operation double side cooled

0.021

DC operation single side cooled

0.006

DC operation double side cooled

K/W

0.003

Mounting force, ± 10 % Approximate weight Case style

°C

See dimensions - link at the end of datasheet

24 500 (2500)

N (kg)

425

g

A-24 (K-PUK)

RthJC CONDUCTION CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

SINGLE SIDE

DOUBLE SIDE

SINGLE SIDE

DOUBLE SIDE

180°

0.003

0.003

0.002

0.002

120°

0.004

0.004

0.004

0.004

90°

0.005

0.005

0.005

0.005

60°

0.007

0.007

0.007

0.007

30°

0.012

0.012

0.012

0.012

TEST CONDITIONS

UNITS

TJ = TJ maximum

K/W

Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 09-Jan-15 Document Number: 94394 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-ST1200C..K Series

130

Vishay Semiconductors

ST1200C..K Series (Single Side Cooled) RthJ-hs (DC) = 0.042 K/W

120 110 100 90

Conduction Angle

80

30° 60°

70

90°

60

120° 180°

50 40

0

200

400

600

800 1000 1200

Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

www.vishay.com

130

ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W

120 110 100 90 80

Conduction Period

70 60 50

30° 60° 90°

40 30 20

120° 180° 0

110 100 90 80

Conduction Period

70 60

30°

50

60° 90° 120° 180°

40 30 20

0

400

800

1200

DC 1600

2000

4000

180° 120° 90° 60° 30° RMS Limit

3500 3000 2500 2000 1500 1000

Conduction Angle

500

ST1200C..K Series T J = 125°C

0

0

Average On-state Current (A)

110 100 90

Conduction Angle

80 70 30°

60

60°

50

90°

40 30

0

400

800

1200

120°

180°

1600

800

1200

1600

2000

2000

Fig. 5 - On-State Power Loss Characteristics

Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W

120

400

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

130

3600

Fig. 4 - Current Ratings Characteristics

Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W

120

DC

1800 2400 3000

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

130

600 1200

5000 DC 180° 120° 90° 60° 30°

4000 3000

RMS Limit 2000

Conduction Period

1000 0

ST1200C..K Series TJ = 125°C 0

600 1200 1800 2400 3000 3600

Average On-state Current (A)

Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics

Fig. 6 - On-State Power Loss Characteristics

Revision: 09-Jan-15 Document Number: 94394 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-ST1200C..K Series

28000

Vishay Semiconductors Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

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At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

26000 24000 22000 20000 18000 16000

ST1200C..K Series

14000 12000

1

10

100

32000

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C 28000 No Voltage Reapplied 26000 Rated VRRM Reapplied

30000

24000 22000 20000 18000 16000 14000

ST1200C..K Series

12000 0.01

0.1

1

Pulse Train Duration (s)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled

Instantaneous On-state Current (A)

10000

1000

TJ = 25°C TJ = 125°C ST1200C..K Series

100 0.5

1

1.5

2

2.5

3

Instantaneous On-state Voltage (V)

Transient Thermal Impedance Z thJ-hs (K/W)

Fig. 9 - On-State Voltage Drop Characteristics

0.1

0.01

Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation)

0.001 0.001

ST1200C..K Series

0.01

0.1

1

10

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

Revision: 09-Jan-15 Document Number: 94394 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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10

Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr