VS-ST303SP Series www.vishay.com

Vishay Semiconductors

Inverter Grade Thyristors (Stud Version), 300 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance

TO- 209AE (TO-118)

• Compression bonding • Designed and qualified for industrial level

PRODUCT SUMMARY

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

IT(AV)

300 A

VDRM/VRRM

400 V, 1200 V

VTM

2.16 V

TYPICAL APPLICATIONS

ITSM at 50 Hz

3000 A

• Inverters

ITSM at 60 Hz

3150 A

• Choppers

IGT

200 mA

• Induction heating

TJ

-40 °C to 125 °C

Package

TO-209AE (TO-118)

Diode variation

Single SCR

• All types of force-commutated converters  

MAJOR RATINGS AND CHARACTERISTICS PARAMETER

TEST CONDITIONS

IT(AV)

TC

IT(RMS)

VALUES

UNITS

300

A

65

°C

471

ITSM I2t

50 Hz

7950

60 Hz

8320

50 Hz

316

60 Hz

288

VDRM/VRRM

A

kA2s

400 to 1200

V

tq

10/20

μs

TJ

-40 to 125

°C

IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA

ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER

VS-ST303S

VOLTAGE CODE

VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V

VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V

04

400

500

08

800

900

12

1200

1300

50

Revision: 08-Jul-14 Document Number: 94375 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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CURRENT CARRYING CAPABILITY ITM

FREQUENCY

ITM

180° el

ITM

UNITS

100 µs

180° el

50 Hz

670

470

1050

940

5240

4300

400 Hz

480

330

1021

710

1800

1270

1000 Hz

230

140

760

470

730

430

2500 Hz

35

-

150

-

90

Recovery voltage VR Voltage before turn-on VD

50

50

VDRM

VDRM

VDRM

50

Case temperature

40

Equivalent values for RC circuit

-

50

Rise of on-state current di/dt

65

10/0.47

40

A

V

65

10/0.47

40

A/μs 65

°C μF

10/0.47

ON-STATE CONDUCTION PARAMETER

SYMBOL

Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one half cycle,  non-repetitive surge current

IT(AV) IT(RMS)

ITSM

TEST CONDITIONS 180° conduction, half sine wave

°C

471 7950

t = 8.3 ms t = 10 ms t = 10 ms

I2t

A

65

t = 10 ms

t = 8.3 ms t = 10 ms t = 8.3 ms

No voltage reapplied 100 % VRRM  reapplied No voltage reapplied

UNITS

300

DC at 45 °C case temperature

t = 8.3 ms

Maximum I2t for fusing

VALUES

8320

A

6690 Sinusoidal half wave, initial TJ = TJ maximum

7000 316 288 224

100 % VRRM  reapplied

204

Maximum I2t for fusing

I2t

t = 0.1 ms to 10 ms, no voltage reapplied

3160

Maximum peak on-state voltage

VTM

ITM = 1255 A, TJ = TJ maximum,  tp = 10 ms sine wave pulse

2.16

Low level value of threshold voltage

VT(TO)1

(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum

1.44

High level value of threshold voltage

VT(TO)2

(I >  x IT(AV)), TJ = TJ maximum

1.46

Low level value of forward slope resistance

rt1

(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum

0.57

High level value of forward slope resistance

rt2

(I >  x IT(AV)), TJ = TJ maximum

0.56

Maximum holding current

IH

TJ = 25 °C, IT > 30 A

600

Typical latching current

IL

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A

1000

kA2s

kA2s

V

m

mA

SWITCHING PARAMETER

SYMBOL

Maximum non-repetitive rate of rise of turned-on current Typical delay time

VALUES

UNITS

TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt

1000

A/μs

td

TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5  source

0.80

tq

TJ = TJ maximum,  ITM = 550 A, commutating dI/dt = 40 A/μs VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs

dI/dt

minimum Maximum turn-off time

maximum

TEST CONDITIONS

10

μs

20

Revision: 08-Jul-14 Document Number: 94375 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BLOCKING PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

500

V/μs

Maximum critical rate of rise of off-state voltage

dV/dt

TJ = TJ maximum, linear to 80 % VDRM,  higher value available on request

Maximum peak reverse and off-state leakage current

IRRM, IDRM

TJ = TJ maximum, rated VDRM/VRRM applied

50

mA

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TRIGGERING PARAMETER Maximum peak gate power

PGM

Maximum average gate power

PG(AV)

Maximum peak positive gate current

IGM

Maximum peak positive gate voltage

+VGM

Maximum peak negative gate voltage

-VGM

Maximum DC gate currrent required to trigger

IGT

Maximum DC gate voltage required to trigger

VGT

Maximum DC gate current not to trigger

IGD

Maximum DC gate voltage not to trigger

VGD

60

TJ = TJ maximum, f = 50 Hz, d% = 50

10 10

TJ = TJ maximum, tp  5 ms

20 5 200

TJ = 25 °C, VA = 12 V, Ra = 6  TJ = TJ maximum, rated VDRM applied

W A V mA

3

V

20

mA

0.25

V

VALUES

UNITS

THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER

SYMBOL

Maximum operating junction temperature range

TEST CONDITIONS

TJ

-40 to 125

Maximum storage temperature range

TStg

-40 to 150

Maximum thermal resistance, junction to case

RthJC

DC operation

0.10

Maximum thermal resistance, case to heatsink

RthCS

Mounting surface, smooth, flat and greased

0.03

Non-lubricated threads

48.5 (425)

N·m (lbf · in)

535

g

Mounting force, ± 10 % Approximate weight Case style

See dimensions - link at the end of datasheet

°C

K/W

TO-209AE (TO-118)

RthJ-hs CONDUCTION CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

180°

0.011

0.008

120°

0.013

0.014

90°

0.017

0.018

60°

0.025

0.026

30°

0.041

0.042

TEST CONDITIONS

UNITS

TJ = TJ maximum

K/W

Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC  

Revision: 08-Jul-14 Document Number: 94375 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-ST303SP Series Vishay Semiconductors

130

Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)

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ST303SSeries RthJC (DC) = 0.10 K/ W

120 110

Conduc tion Angle

100 90

30° 60°

80

90° 120°

70

180°

60 0

50

100

150

200

250 300

350

130

ST303SSeries R (DC) = 0.10 K/ W

120

thJC

110 100 Conduction Period

90 80 70

30° 60°

60

90° 120°

50 0

100

200

300

DC 400

500

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

600

R

0.5 K /

ta el -D

100

ST303SSeries TJ = 125°C

W K/

Conduction Angle

01 0.

200

=

RMSLimit

300

SA

400

0. 06 K/ W 0. 08 K/ W 0. 12 K/ W 0.1 6K /W 0.2 K/ W 0.3 K/ W

W K/

180° 120° 90° 60° 30°

500

h R t

03 0.

Maximum Average On-state Power Loss (W)

180°

40

W

0 0

50

100

150

200

250

25 300

Average On-state Current (A)

50

75

100

125

Maximum Allowab le Ambient Temperature (°C)

Maximum Average On-state Power Loss (W)

Fig. 3 - On-State Power Loss Characteristics

900 DC 180° 120° 90° 60° 30°

800 700 600

R th S

A = 0. 0. 03 01 K/ K/ W W 0. 06 -D K/ el W ta

500

0.1 2

400

RMSLimit

300

200

Conduction Period

ST303SSeries TJ = 125°C

100

R

K/ W

0.2 K/ W 0.3 K/ W 0.5 K /W

0 0

25 50 100 150 200 250 300 350 400 450 500 Average On-state Current (A)

50

75

100

125

Maximum Allowab le Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics Revision: 08-Jul-14 Document Number: 94375 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-ST303SP Series

7000

Vishay Semiconductors Transient Thermal Impedance Z thJC (K/ W)

Peak Half Sine Wave On-state Current (A)

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At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s

6500 6000 5500 5000 4500 4000

ST303S Series

3500 3000 1

10

100

1 Steady State Value RthJC = 0.10 K/ W (DC Operation) 0.1

0.01 ST303SSeries

0.001 0.001

8000

Maximum Non Repetitive Surge Current 7500 Versus Pulse Train Duration. Control Of Conduc tion May Not Be Maintained. 7000 Initial TJ = 125°C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 5500 5000 4500 4000 ST303SSeries 3500 3000 0.01

0.1

1

Pulse Train Duration (s)

1000 TJ = 25°C TJ = 125°C ST303S Series 100 3

4

5

6

10

320

I

TM

300 280 260

= 500 A 300 A 200 A 100 A 50 A

240 220 200 180 160 ST303S Series TJ = 125 °C

140 120 100 80 10

20 30

40 50

60 70 80

90 100

7

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

8

Fig. 9 - Reverse Recovered Charge Characteristics

Maximum Reverse Rec overy Current - Irr (A)

Instantaneous On-state Current (A)

10000

2

1

Rate Of Fall Of On-state Current - di/ dt (A/ µs)

Fig. 6 - Maximum Non-Repetitive Surge Current

1

0.1

Fig. 8 - Thermal Impedance ZthJC Characteristics

Maximum Reverse Recovery Charge - Qrr (µC)

Peak Half Sine Wave On-state Current (A)

Fig. 5 - Maximum Non-Repetitive Surge Current

0.01

Square Wave Pulse Duration (s)

Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N)

180 160 140

ITM = 500 A 300 A 200 A 100 A 50 A

120 100 80 ST303S Series TJ = 125 °C

60 40 20 10

20 30

40 50

60 70 80 90 100

Rate Of Fall Of On-state Current - di/ dt (A/ µs)

Fig. 10 - Reverse Recovery Current Characteristics

Revision: 08-Jul-14 Document Number: 94375 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Pea k On-state Current (A)

1E4

500

1000

1E3

50 Hz

400 200 100

1000

1500

Snubb er circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM

2000 2500

1E2

1E1 1E1

1E2

1E3

1E4

50 Hz

ST303SSeries Sinusoidal pulse TC = 65°C

tp

1E1

100

Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM

1500

ST303S Series Sinusoida l pulse TC = 40°C

tp

400 200

500

1E2

1E3

1E4

Pulse Basewidth (µs)

Pulse Basewidth (µs)

Fig. 11 - Frequency Characteristics

Peak On-state Current (A)

1E4

1E3 500

400 200

100

50 Hz 400

1000 2000

Snub b er c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM

1500

2500

1E1

2000

ST303SSeries Trap ezoid al p ulse TC = 40°C d i/ dt = 50A/ µs

1E0 1E1

50 Hz

1000

Snub ber c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM

1500

1E2

100

200

500

1E2

1E3

1E4

1E1

ST303SSeries Tra p ezoida l pulse TC = 65°C di/ d t = 50A/µs

1E2

1E3

1E4

Pulse Basewidth (µs)

Pulse Basewidth (µs)

Fig. 12 - Frequency Characteristics

Peak On-sta te Current (A)

1E4

1E3

400

200 100

50 Hz 400

500 1000

Snub ber circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM

1500 2000

1E1

1E2

50 Hz

2000

ST303S Series Tra pezoid al p ulse TC = 40°C di/ d t = 100A/ µs

1E3

Snubber c irc uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM

1500

2500

tp

1E0 1E1

100

500

1000

1E2

200

ST303S Series Trapezoidal pulse TC = 65°C di/ dt = 100A/ µs

tp

1E4

1E1

1E2

1E3

1E4

Pulse Basewidth (µs)

Pulse Basewidth (µs)

Fig. 13 - Frequency Characteristics

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Peak On-state Current (A)

1E5

tp

1E4

ST303SSeries Rectangular pulse di/ dt = 50A/ µs

20 joules p er pulse 3

5

20 joules per pulse

10

10 5

2 1

1E3

3 2 1

0.5 0.4

0.5

1E2 ST303SSeries Sinusoidal pulse

tp

1E1 1E1

0.4

1E2

1E3

1E1

1E4

1E2

1E3

1E4

Pulse Basewidth (µs)

Pulse Basewidth (µs)

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr