Low Power Bluetooth Module

Low Power Bluetooth Module ABBTM- NVC-MDCS71 FCC ID: OC3BM1871 DC: 1326 ABBTM-NVC-MDCS71 FEATURES: Pb RoHS RoHS/RoHS II compliant 19.5 x 12.5 x...
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Low Power Bluetooth Module

ABBTM- NVC-MDCS71 FCC ID: OC3BM1871 DC: 1326

ABBTM-NVC-MDCS71

FEATURES:

Pb

RoHS

RoHS/RoHS II compliant

19.5 x 12.5 x 2.4 mm SMT

Moisture Sensitivity Level (MSL) – Level 3

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APPLICATIONS:

• Single mode Bluetooth v4.1 low energy • Sports and fitness • 4 dBm TX power/ -92.5dBm RX sensitivity, RSSI monitoring for proximity applications • Healthcare • Supports master and slave • Home entertainment • Support GATT-based Profile: Proximity, Find Me, Heart Rate, HID and etc. • Office and mobile accessories • UART/I2C master/SPI master interfaces • Automotive • 9 digital PIOs/3 analog IOs • Commercial • 10bit ADC IOs • Watches • Wakeup interrupt and watchdog timer • Human interface devices • SMT pads for easy and reliable PCB mounting, Internal chip antenna • 19.50x12.50x2.4mm • FCC ID: OC3BM1871* • QDID: B020997* *Note: ABBTM-NVC-MDCS71 crosses to NovaComm P/N: NVC-MDCS71. BQB/FCC certification documentation is under P/N: NVC-MDCS71.

GENERAL DESCRIPTION ABBTM-NVC-MDCS71 is a single-mode Bluetooth 4.1 low power module, based on NovaComm’s proprietary technology. Using the CSR’s uEnergy platform, it enables ultralow power connectivity and basic data transfer for applications previously limited by the power consumption, size constraints and complexity of other wireless standards. It contains everything required to create a Bluetooth low energy product with RF, baseband, MCU, qualified Bluetooth V4.1 stack and customized firmware on a single module. The module can be power directly with a standard 3V coin cell batteries or pair of AAA batteries. In lowest power sleep mode it consumes only 600nA and will wake up in few hundred microseconds.

PIN CONFIGURATION:

Figure 1. Pinout (Topview)

ABRACON IS ISO 9001:2008 CERTIFIED

LLC

2 Faraday, Suite# B | Irvine | CA 92618 Revised: 06.29.15 Ph. 949.546.8000 | Fax. 949.546.8001 Visit www.abracon.com for Terms and Conditions of Sale

Low Power Bluetooth Module

ABBTM- NVC-MDCS71 FCC ID: OC3BM1871 DC: 1326

ABBTM-NVC-MDCS71

Pb

RoHS

RoHS/RoHS II compliant

19.5 x 12.5 x 2.4 mm SMT | | | | | | | | | | | | | | |

PIN DESCRIPTION Pin

Symbol

1 2 3 4

GND AIO2 AIO1 AIO0

5

UART_TX

6

UART_RX

7

PIO3

8

PIO4

9

GND

10

PIO5/SPI_CLK

Bi-directional with programmable strength internal pull-up/down

Programmable input/output line Or debug SPI_CLK select by SPI_PIO_SEL

11

PIO6/SPI_CSB

Bi-directional with programmable strength internal pull-up/down

Programmable input/output line Or debug chip select, selected by SPI_PIO_SEL

12

PIO7/SPI_MOSI

Bi-directional with programmable strength internal pull-up/down

Programmable input/output line Or debug SPI_MOSI, selected by SPI_PIO_SEL

13

VDD_PIO

Powered

PIO power supply

Bi-directional with programmable strength internal pull-up/down Bi-directional tri-state with weak internal pull-up

Programmable input/output line Or debug SPI_MISO, selected by SPI_PIO_SEL I2C data input/output or SPI serial flash data output(SF_OUT) I2C clock or SPI serial flash clock output (SF_CLK) Ground Programmable input/output line PWM or LED Controls Programmable input/output line PWM or LED Controls

14

PIO8/SPI_MISO

15

I2C_SDA

16

I2C_SCL

17

GND

18

PIO9

19

PIO10

20

PIO11

21 22 23

SPI_PIO_SEL VDD_BAT GND

24

WAKE

25

GND

ABRACON IS ISO 9001:2008 CERTIFIED

I/O Type

Description

Ground Bidirectional analogue Bidirectional analogue Bidirectional analogue CMOS output, tri-state, with weak internal pull-up CMOS input with weak internal pulldown Bi-directional with programmable strength internal pull-up/down Bi-directional with programmable strength internal pull-up/down Ground

Ground 10bit Analogue programmable I/O line 10bit Analogue programmable I/O line 10bit Analogue programmable I/O line UART data output UART data input Programmable input/output line PWM or LED Controls Programmable input/output line PWM or LED Controls Ground

Input with weak internal pull-up Ground Bi-directional with programmable strength internal pull-up/down Bi-directional with programmable strength internal pull-up/down Bi-directional with programmable strength internal pull-up/down Input with strong internal pull-down Power supply Ground Input has no internal pull-up or pull-down use external pull-down Ground

LLC

Programmable input/output line Selects SPI debug on (8:5) Button cell battery or DC 1.8V to 3.6V Ground Set high to wake the module from hibernate. Use an external pull-down for this pin. Ground

2 Faraday, Suite# B | Irvine | CA 92618 Revised: 06.29.15 Ph. 949.546.8000 | Fax. 949.546.8001 Visit www.abracon.com for Terms and Conditions of Sale

Low Power Bluetooth Module

ABBTM- NVC-MDCS71 FCC ID: OC3BM1871 DC: 1326

ABBTM-NVC-MDCS71

Pb

RoHS

RoHS/RoHS II compliant

19.5 x 12.5 x 2.4 mm SMT | | | | | | | | | | | | | | |

ELECTRICAL CHARACTERISTICS Absolute Maximum Rating Rating

Min

Max

Unit

Storage Temperature

-40

+85

°C

Battery (VDD_BAT) operation*

1.8

3.6

V

I/O supply voltage

-0.4

+3.6

V

Vss-0.4

VDD+0.4

V

Other Terminal Voltages except RF

* Short-term operation up to a maximum of 10% of product lifetime is permissible without damage, but output regulation and other specifications are not guaranteed in excess of 4.2V.

Recommended Operating Conditions Operating Condition Operating Temperature Range

Min -30

Battery (VDD_BAT) operation I/O Supply Voltage (VDD_PIO)

Typ

Max +85

Unit °C

1.8

+3.6

V

1.2

+3.6

V

Power Consumptions The current consumption are measured at the VDD_BAT.

Mode

Description

Total typical current at 3V (average)

Fast Advertising

All functions are shutdown. To wake up toggle the WAKE pin All functions are shutdown except for the sleep clock. The module can wake up on a timer on the sleep clock. In 30 second after Power on VDD=3.3V

Slow Advertising

In 3 minutes after fast advertising VDD=3.3V

6uA

Standby (no connect)

VDD=3.3V ,VDD_PIO=3.3v

5uA

Standby (connect)

VDD=3.3V ,VDD_PIO=3.3v

8uA

Transmit data

VDD=3.3V VDD_PIO=3.3V

1mA

RF RX /TX active (0dBm) *

VDD=3.3V VDD_PIO=3.3V

~16mA peak

Dormant Hibernate