MKP1V120 Series Preferred Device
Sidac High Voltage Bidirectional Triggers Bi–directional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on–state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: • High Pressure Sodium Vapor Lighting • Strobes and Flashers • Ignitors • High Voltage Regulators • Pulse Generators • Used to Trigger Gates of SCR’s and Triacs • Indicates UL Registered — File #E116110 • Device Marking: Logo, Device Type, e.g., MKP1V120, Date Code
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SIDACS ( ) 0.9 AMPERES RMS 120 thru 240 VOLTS
MT1
MT2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Symbol
Peak Repetitive Off–State Voltage (Sine Wave, 50 to 60 Hz, TJ = – 40 to 125°C) MKP1V120, MKP1V130, MKP1V160 MKP1V240
VDRM, VRRM
On-State Current RMS (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) Peak Non–repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range
Value
Unit Volts
IT(RMS)
"90 "180 "0.9
Amp
ITSM
"4.0
Amps
TJ
– 40 to +125
°C
Tstg
– 40 to +150
°C
DO–41 PLASTIC AXIAL (No Polarity) CASE 059A
ORDERING INFORMATION Device
Package
Shipping
MKP1V120RL
DO41
Tape and Reel 5K/Reel
MKP1V130RL
DO41
Tape and Reel 5K/Reel
MKP1V160
DO41
Bulk 1K/Bag
MKP1V160RL
DO41
Tape and Reel 5K/Reel
MKP1V240
DO41
Bulk 1K/Bag
MKP1V240RL
DO41
Tape and Reel 5K/Reel
Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 5
1
Publication Order Number: MKP1V120/D
MKP1V120 Series THERMAL CHARACTERISTICS Characteristic
Symbol
Max
Unit
RθJL
40
°C/W
TL
260
°C
Thermal Resistance, Junction to Lead Lead Length = 3/8″ Lead Solder Temperature (Lead Length 1/16″ from Case, 10 s Max)
w
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic
Symbol
Min
Typ
Max
Unit
IDRM
—
—
5.0
µA
110 120 150 220
— —
130 140 170 250
VTM
—
1.3
1.5
Volts
Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 Ohm)
IH
—
—
100
mA
Switching Resistance (Sine Wave, 50 to 60 Hz)
RS
0.1
—
—
kΩ
di/dt
—
120
—
A/µs
OFF CHARACTERISTICS Repetitive Peak Off–State Current TJ = 25°C (50 to 60 Hz Sine Wave) VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160 VDRM = 180 V, MKP1V240
ON CHARACTERISTICS Breakover Voltage IBO = 35 µA 35 µA 200 µA 35 µA
VBO MKP1V120 MKP1V130 MKP1V160 MKP1V240
Peak On–State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%)
Volts
DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of On–State Current, Critical Damped Waveform Circuit (IPK = 130 Amps, Pulse Width = 10 µsec)
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MKP1V120 Series Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current
Symbol
ITM
Parameter
IDRM VDRM
VTM
Off State Leakage Current Off State Repetitive Blocking Voltage
VBO IBO
Breakover Voltage
IH VTM
Holding Current On State Voltage
ITM
Peak on State Current
IS I(BO) + Voltage
VDRM
140
+ (V(I
(BO) S
V(BO) – V S)
– I (BO))
1.0 3/8″
120
IT(RMS) , ON–STATE CURRENT (AMPS)
TL
130
3/8″
110 TJ = 125°C Sine Wave Conduction Angle = 180°C
100 90 80 70 60 50
TJ = 125°C Sine Wave Conduction Angle = 180°C
0.8
Assembled in PCB Lead Length = 3/8″
0.6
0.4
0.2
40 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
IT(RMS), ON–STATE CURRENT (AMPS)
TA, MAXIMUM AMBIENT TEMPERATURE (°C)
Figure 1. Maximum Lead Temperature
Figure 2. Maximum Ambient Temperature
10 7.0 5.0
140
1.25
3.0 2.0
TJ = 25°C
PRMS , POWER DISSIPATION (WATTS)
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C)
VS
IDRM
Breakover Current
RS
I T , INSTANTANEOUS ON–STATE CURRENT (AMPS)
Slope = RS
IH
125°C
1.0 0.7 0.5 0.3 0.2
TJ = 25°C Conduction Angle = 180°C
1.00
0.75
0.50
0.25
0.1 0
1.0
2.0
3.0
4.0
0
5.0
0.2
0.4
0.6
0.8
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
IT(RMS), ON–STATE CURRENT (AMPS)
Figure 3. Typical On–State Voltage
Figure 4. Typical Power Dissipation
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1.0
MKP1V120 Series
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
THERMAL CHARACTERISTICS 1.0 0.7 0.5 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady–state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
0.3 0.2 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp.
0.1 0.07 0.05 0.03 0.02 0.01 0.1
0.2
0.5
1.0
2.0
5.0
20
10
50
100
TJ = TL + DTJL
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
IH , HOLDING CURRENT (NORMALIZED)
1.4
1.0
0.9
0.8 –60
–40
–20
0
20
40
60
80
120
100
1.2
1.0
0.8
0.6 0.4 –60
140
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
VBO , BREAKOVER VOLTAGE (NORMALIZED)
TYPICAL CHARACTERISTICS
10
IPK
10% tw 1.0 1.0
0.1
10
tw, PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve http://onsemi.com 4
100
120
140
MKP1V120 Series PACKAGE DIMENSIONS
DO–41 PLASTIC AXIAL (No Polarity) CASE 059A–01 ISSUE A
A
K
K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
B
DIM A B D K
D
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INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 –––
MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 –––
MKP1V120 Series
Notes
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MKP1V120 Series
Notes
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MKP1V120 Series
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MKP1V120/D