Datasheet EARTH LEAKAGE CURRENT DETECTOR

EARTH LEAKAGE CURRENT DETECTOR IC BD54123F ●General Description BD54123F integrates leakage detector and amplifier. Especially, it is suitable for high sensitivity and a highspeed operation use, and since the operating temperature range is wide, it can be used for various uses.

●Key Specifications ■ Operating supply voltage range: 12V to 22V ■ Operating temperature range: -40°C to +85°C ■ Supply current: 330μA(typ.) ■ Trip voltage: 4.92mV to 11.06mV ■ Output current ability(Ta=-40℃): -200μA~(min.)

●Features ■ Small temperature fluctuation and high input sensitivity ■ Wide operating temperature range

W(Typ.) x D(Typ.) x H(Max.) 5.00mm x 6.20mm x 1.71mm

●Packages SOP8

●Applications ■ Earth leakage circuit breaker ■ Earth leakage circuit relay

●Typical Application Circuit Example

SCR

RVS

COS VZ

8

7

C1

VR Trip Coil

6

OS

5 NR

SC

Reference voltage output block

VS

Latch block

CVS

1

IN

CIN

CVR

2

GND

3 RIN

OD

4 COD

ZCT:Zero current transformer TEST SW&R

○Product structure:Silicon monolithic integrated circuit www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001

○This product is not designed protection against radioactive rays.

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TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002

Datasheet

BD54123F ●Pin Configurations

●Block Diagrams SOP8 (TOP VIEW)

8

7 VS

7

6

5

1

2

3

4

5 NR

SC

Latch block

Reference voltage output block

8

6

OS

VR

1

IN

2

GND

3

OD

4

●Pin Descriptions Pin No.

Symbol

Function

1

VR

Reference voltage

2

IN

Input

3

GND

4

OD

Output of input comparator

5

SC

Input of latch circuit

6

NR

Noise absorption

7

OS

Output

8

VS

Power supply

Ground

●Absolute Maximum Ratings (Ta=25℃) Parameter

Symbol

Rating

Unit

*1

IS

8

mA

IN-VR current

IIN-VR

±250

mA

VR pin current

IVR

30

mA

IN terminal current

IIN

30

mA

SC terminal current

ISC

5

mA

Power Supply voltage

VS

36

V

Input terminal voltage

VVR/IN

17

V

VOD/SC/NR/OS

8

V

Power dissipation

Pd

680 *2

mW

Storage temperature

Tstg

-55 to +150



Supply current

OD/SC/NR/OS terminal voltage

*1 *2

The power-supply voltage is limited by the internal clamping circuit. To use at temperature above Ta=25[℃] reduce 5.5mW/℃. Mounted on a glass epoxy PCB (70mm×70mm×1.6mm)

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Datasheet

BD54123F ●Recommended Operating Ratings Parameter

Symbol

Limits

Unit

Supply voltage

VS

12 to 22

V

Operating temperature

Topr

-40 to +85



CVS

1≦

μF

External capacitor between VS and GND External capacitor between OS and GND

COS

≦1

μF

●Electrical Characteristics (Unless otherwise specified, VS=12V, GND=0V, Ta=25℃) Limits

Temperature range

Min.

Typ.

Max.

-40℃

-

-

520

25℃

-

330

500

85℃

-

-

460

VT

-40℃ to +85℃

4.92

7.50

OD Source current

IODSO

25℃

-27.2

OD Sink current

IODSI

25℃

Parameter

Symbol

IS1

Supply current

Trip voltage

OS Source current

IOSSO

Unit

Conditions

μA

ΔVIN=VVR-VIN=30mV

11.06

mV

VT=ΔVIN=VVR-VIN

-20.6

-14.0

μA

16.7

26.0

35.3

μA

-40℃

-200

-

-

25℃

-100

-

-

85℃

-75

-

-

ΔVIN=VVR-VIN=30mV, VOD=1.2V VOD=0.8V, ΔVIN=VVR-VIN=0mV

μA

VSC=2.0V, VOS=0.8V

VSC=0.2V, VOS=0.2V

OS Sink current

IOSSI

-40℃ to +85℃

200

-

-

μA

SC ON voltage

VSCON

25℃

1.00

1.24

1.48

V

Input clamp voltage

VIC

-40℃ to +85℃

4.2

5.5

6.7

V

IIC=20mA

Differential input clamp voltage

VIDC

-40℃ to +85℃

0.6

1.0

1.4

V

IIDC=100mA

Maximum current voltage

VSM

25℃

26

29

32

V

IS=7mA

IOS2

-40℃ to +85℃

-100

-

-

μA

IS=900μA,VSC=2.0V VOS=0.8V

VSOFF

25℃

0.5

-

-

V

tON

25℃

1.8

2.9

4.0

ms

Supply current 2

*1

Latch OFF Supply Voltage Operating time

*2

*1 Supply current 2 is OS source current value when the power supply current(Is=900μA) is given. *2 Operating time is time until output voltage reaches 0.8V after detecting the leakage signal. Conditions : Capacitor(0.047μF) is connected between OD(OS) and GND.

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Datasheet

BD54123F ●Test circuits

1.IS1

2.VT

3.IODSO

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

1

2

5

6

7

8

1

2

4

5

6

7

8

1

2

4

5

6

7

8

A

IOD

3

4

+

A

3

VS

IS

+ ΔVIN

ΔVIN

4.IODSI

VS

V VOD

VS ΔVIN

3

5.IOSSO/IOSSI

VOD

6.VSCON

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

1

2

4

5

6

7

8

1

2

4

5

6

7

8

1

2

4

5

6

7

8

A

IOD

3

3

VSC +

VS +

VOD

3

A

VS

VSC

IOS

V Vos

VOS

7.VIC

8.VIDC

9.VSM

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

1

2

5

6

7

8

1

2

4

5

6

7

8

1

2

4

5

6

7

8

3

4

3

3

VS

VSM V

IIDC V

IC V VIC

IS

VIDC

10.IOS2

11.VSOFF

12.tON

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

VR

IN GND OD

SC

NR

OS

VS

1

2

4

5

6

7

8

1

2

4

5

6

7

8

1

2

4

5

6

7

8

0.047 μF

V

3

VSC

IS +

A

IOS

3

3

VS

0.047 μF V

VOS

ΔVIN

VOS

VS 0.047 μF

●Timing Chart Input voltage between IN and VR ΔVIN(IN-VR)

VT

VSCON OD/SC terminal voltage VOD/VSC

OS terminal voltage VOS

0.8V

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Datasheet

BD54123F ●Typical Performance Curves(reference data)

1.0

800

0.9

700 600

0.7

S u p p ly C u rre n t IS [u A ]

P o w e r D issip a tio n [W ]

0.8

105℃

0.6 0.5 0.4 0.3

500

-60℃ 25℃

400 300 200

0.2 100

0.1 0.0 0

25

50

85

75

0

100

125

0

150

5

10 15 20 Power Supply VS [V]

Ambient Temperature Ta [℃]

Figure 1 Derating curve

30

Figure 2 Circuit current - Supply voltage

40

0 O S term inal S ource C urrent I O S S O [uA ]

30

R a te of fluctua tion Δ [% ]

25

20

RIN=300

10 0 -10

RIN=1kΩ -20 -30 -40

-100

105℃ -200

25℃ -300

-60℃ -400

-500 -60

-40

-20

0

20

40

60

80

100

120

0

5

10

15

20

Ambient Temperature Ta [℃]

Power Supply VS [V]

Figure 3 Trip voltage fluctuation rate - Ambient temperature

Figure 4 OS terminal source current - Supply voltage

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TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002

Datasheet

5

10

4

8 O S te rm in a l v o lta g e V O S [V ]

O p e ra tin g tim e t O N [m s ]

BD54123F

3

2

1

6

4

-60℃

2

105℃ 0

0 -60

-40

-20

0

20

40

60

80

100

0

120

1

2

Ambient Temperature Ta [℃]

Figure 5 Operating time - Ambient temperature

10

10

8

8

6

105℃

25℃

3 4 5 6 Power Supply VS [V]

7

8

9

10

Figure 6 Latch OFF supply voltage - Ambient temperature

O S te rm in a l v o lta g e V O S [V ]

O S te rm in a l vo lta g e V O S [V ]

25℃

-60℃

4

2

6

4

-60℃ 25℃

2

105℃ 0

0 0.6

0.8

1.0

1.2

1.4

1.6

1.8

0

SC terminal input voltage VSCON [V]

Figure 7 SC ON voltage - Ambient temperature

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1

2

3 4 5 6 Power Supply VS [V]

7

8

9

10

Figure 8 Latch ON supply voltage - Ambient temperature

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Datasheet

BD54123F

●Power Dissipation Power dissipation(total loss) indicates the power that can be consumed by IC at Ta=25℃(normal temperature).IC is heated when it consumed power, and the temperature of IC chip becomes higher than ambient temperature. The temperature that can be accepted by IC chip depends on circuit configuration, manufacturing process, and consumable power is limited. Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature) and thermal resistance of package (heat dissipation capability). The maximum junction temperature is typically equal to the maximum value in the storage temperature range. Heat generated by consumed power of IC radiates from the mold resin or lead frame of the package. The parameter which indicates this heat dissipation capability(hardness of heat release)is called thermal resistance, represented by the symbol θja℃/W.The temperature of IC inside the package can be estimated by this thermal resistance. Fig.9(a) shows the model of thermal resistance of the package. Thermal resistance θja, ambient temperature Ta, junction temperature Tj, and power dissipation Pd can be calculated by the equation below θja = (Tj - Ta) / Pd ℃/W ・・・・・ (Ⅰ) Derating curve in Fig.9(b) indicates power that can be consumed by IC with reference to ambient temperature. Power that can be consumed by IC begins to attenuate at certain ambient temperature. This gradient is determined by thermal resistance θja. Thermal resistance θja depends on chip size, power consumption, package, ambient temperature, package condition, wind velocity, etc even when the same of package is used. Thermal reduction curve indicates a reference value measured at a specified condition. Fig.10(a) show a derating curve for an example of BD54123F. LSIの 消 費 力 [W] Power dissipation of 電 LSI Pd (max)

θja=(Tj-Ta)/P ℃/W

P2

θja2 < θja1

周囲温度 Ta [℃] Ambient temperature

θ' ja2

P1

θ ja2 Tj ' (max) Tj (max)

θ' ja1

Chip surfaceチップ temperature 表面温度 Tj [℃]

0

消費電力Pd[W] P [W] Power dissipation

25

50

θ ja1 75

100

Ambient temperature 周 囲 温 度 Ta [℃ ]

125

150

(b) Derating curve

(a) Thermal resistance

Figure 9. Thermal resistance and derating

1.0 0.9 Power Dissipation [W]

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0

25

50

75 85 100

125

150

Ambient Temperature Ta [℃] (a) BD54123F

BD54123F

Derating curve slope

UNIT

5.5

mW/℃

When using the unit above Ta=25℃, subtract the value above per degree℃ Permissible dissipation is a value when FR4 glass epoxy board 70mm×70mm×1.6mm (cooper foil area below 3%) is mounted.

Figure 10. Derating curve

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Datasheet

BD54123F ●I/O equivalence circuit VCC VCC

VS

300O

Pin 1 [VR]

Pin 5 [SC]

100kO

ESD PRO TECT

Pin 2

VCC VCC

VS Pin 1

Pin 2 [IN]

VCC

300O

Pin 6 [NR]

100kO

Pin 7

VCC VCC Pin 6

Pin 3 [GND]

Pin 7 [OS]

VCC VCC

VCC line (Internal Power Supply Line)

Pin 4 [OD]

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Pin 8 [VS]

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Datasheet

BD54123F

●Operational Notes 1) Absolute maximum ratings Absolute maximum ratings are the values which indicate the limits, within which the given voltage range can be safely charged to the terminal. However, it does not guarantee the circuit operation. 2) Power dissipation Pd Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to a rise in chip temperature, including reduced current capability. Therefore, please take into consideration the power dissipation (Pd) under actual operating conditions and apply a sufficient margin in thermal design. Refer to the thermal derating curves for more information. 3) Terminal short-circuits When the output and power supply terminals are shorted, excessive output current may flow, resulting in undue heat generation and, subsequently, destruction. 4) Ground terminal voltage All time, Ground terminal voltage should keep lowest voltage. In addition, please confirm whether there is not really a terminal becoming the voltage that is lower than GND including a transitional phenomenon. 5) Operation in a strong electromagnetic field Operation in a strong electromagnetic field may cause malfunctions. 6) Short-circuit between pins and erroneous mounting Incorrect mounting may damage the IC. In addition, the presence of foreign particles between the outputs, the output and the power supply, or the output and GND may result in IC destruction. 7) IC handing Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuations in the electrical characteristics due to piezo resistance effects. 8) Board inspection Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every process is recommended. In addition, when attaching and detaching the jig during the inspection phase, ensure that the power is turned off before inspection and removal. Furthermore, please take measures against ESD in the assembly process as well as during transportation and storage.

Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority.

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Datasheet

BD54123F ●Ordering Information

B

D

5

4

1

2

3

Part Number

F

E2 Packaging and forming specification E2: Embossed tape and reel (SOP8)

Package F: SOP8

●Physical Dimension Tape and Reel Information

SOP8 5.0±0.2 (MAX 5.35 include BURR)

+6° 4° −4°

5

0.3MIN

6

1 2

3

0.9±0.15

7

4.4±0.2

6.2±0.3

8

Tape

Embossed carrier tape

Quantity

2500pcs

Direction of feed

E2 The direction is the 1pin of product is at the upper left when you hold

( reel on the left hand and you pull out the tape on the right hand

)

4

0.595 1.5±0.1

+0.1 0.17 -0.05 S S

0.11

0.1

1.27

1pin

0.42±0.1

Reel

(Unit : mm)

Direction of feed

∗ Order quantity needs to be multiple of the minimum quantity.

●Marking Diagrams SOP8 (TOP VIEW)

5

4

1

2

3

LOT Number

1PIN MARK

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Datasheet

BD54123F ●Revision History Date

Revision

2012.10.29

001

Changes New Release

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