Datasheet EARTH LEAKAGE CURRENT DETECTOR
EARTH LEAKAGE CURRENT DETECTOR IC BD54123F ●General Description BD54123F integrates leakage detector and amplifier. Especially, it is suitable for high sensitivity and a highspeed operation use, and since the operating temperature range is wide, it can be used for various uses.
●Key Specifications ■ Operating supply voltage range: 12V to 22V ■ Operating temperature range: -40°C to +85°C ■ Supply current: 330μA(typ.) ■ Trip voltage: 4.92mV to 11.06mV ■ Output current ability(Ta=-40℃): -200μA~(min.)
●Features ■ Small temperature fluctuation and high input sensitivity ■ Wide operating temperature range
W(Typ.) x D(Typ.) x H(Max.) 5.00mm x 6.20mm x 1.71mm
●Packages SOP8
●Applications ■ Earth leakage circuit breaker ■ Earth leakage circuit relay
●Typical Application Circuit Example
SCR
RVS
COS VZ
8
7
C1
VR Trip Coil
6
OS
5 NR
SC
Reference voltage output block
VS
Latch block
CVS
1
IN
CIN
CVR
2
GND
3 RIN
OD
4 COD
ZCT:Zero current transformer TEST SW&R
○Product structure:Silicon monolithic integrated circuit www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001
○This product is not designed protection against radioactive rays.
1/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●Pin Configurations
●Block Diagrams SOP8 (TOP VIEW)
8
7 VS
7
6
5
1
2
3
4
5 NR
SC
Latch block
Reference voltage output block
8
6
OS
VR
1
IN
2
GND
3
OD
4
●Pin Descriptions Pin No.
Symbol
Function
1
VR
Reference voltage
2
IN
Input
3
GND
4
OD
Output of input comparator
5
SC
Input of latch circuit
6
NR
Noise absorption
7
OS
Output
8
VS
Power supply
Ground
●Absolute Maximum Ratings (Ta=25℃) Parameter
Symbol
Rating
Unit
*1
IS
8
mA
IN-VR current
IIN-VR
±250
mA
VR pin current
IVR
30
mA
IN terminal current
IIN
30
mA
SC terminal current
ISC
5
mA
Power Supply voltage
VS
36
V
Input terminal voltage
VVR/IN
17
V
VOD/SC/NR/OS
8
V
Power dissipation
Pd
680 *2
mW
Storage temperature
Tstg
-55 to +150
℃
Supply current
OD/SC/NR/OS terminal voltage
*1 *2
The power-supply voltage is limited by the internal clamping circuit. To use at temperature above Ta=25[℃] reduce 5.5mW/℃. Mounted on a glass epoxy PCB (70mm×70mm×1.6mm)
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
2/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●Recommended Operating Ratings Parameter
Symbol
Limits
Unit
Supply voltage
VS
12 to 22
V
Operating temperature
Topr
-40 to +85
℃
CVS
1≦
μF
External capacitor between VS and GND External capacitor between OS and GND
COS
≦1
μF
●Electrical Characteristics (Unless otherwise specified, VS=12V, GND=0V, Ta=25℃) Limits
Temperature range
Min.
Typ.
Max.
-40℃
-
-
520
25℃
-
330
500
85℃
-
-
460
VT
-40℃ to +85℃
4.92
7.50
OD Source current
IODSO
25℃
-27.2
OD Sink current
IODSI
25℃
Parameter
Symbol
IS1
Supply current
Trip voltage
OS Source current
IOSSO
Unit
Conditions
μA
ΔVIN=VVR-VIN=30mV
11.06
mV
VT=ΔVIN=VVR-VIN
-20.6
-14.0
μA
16.7
26.0
35.3
μA
-40℃
-200
-
-
25℃
-100
-
-
85℃
-75
-
-
ΔVIN=VVR-VIN=30mV, VOD=1.2V VOD=0.8V, ΔVIN=VVR-VIN=0mV
μA
VSC=2.0V, VOS=0.8V
VSC=0.2V, VOS=0.2V
OS Sink current
IOSSI
-40℃ to +85℃
200
-
-
μA
SC ON voltage
VSCON
25℃
1.00
1.24
1.48
V
Input clamp voltage
VIC
-40℃ to +85℃
4.2
5.5
6.7
V
IIC=20mA
Differential input clamp voltage
VIDC
-40℃ to +85℃
0.6
1.0
1.4
V
IIDC=100mA
Maximum current voltage
VSM
25℃
26
29
32
V
IS=7mA
IOS2
-40℃ to +85℃
-100
-
-
μA
IS=900μA,VSC=2.0V VOS=0.8V
VSOFF
25℃
0.5
-
-
V
tON
25℃
1.8
2.9
4.0
ms
Supply current 2
*1
Latch OFF Supply Voltage Operating time
*2
*1 Supply current 2 is OS source current value when the power supply current(Is=900μA) is given. *2 Operating time is time until output voltage reaches 0.8V after detecting the leakage signal. Conditions : Capacitor(0.047μF) is connected between OD(OS) and GND.
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
3/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●Test circuits
1.IS1
2.VT
3.IODSO
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
1
2
5
6
7
8
1
2
4
5
6
7
8
1
2
4
5
6
7
8
A
IOD
3
4
+
A
3
VS
IS
+ ΔVIN
ΔVIN
4.IODSI
VS
V VOD
VS ΔVIN
3
5.IOSSO/IOSSI
VOD
6.VSCON
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
1
2
4
5
6
7
8
1
2
4
5
6
7
8
1
2
4
5
6
7
8
A
IOD
3
3
VSC +
VS +
VOD
3
A
VS
VSC
IOS
V Vos
VOS
7.VIC
8.VIDC
9.VSM
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
1
2
5
6
7
8
1
2
4
5
6
7
8
1
2
4
5
6
7
8
3
4
3
3
VS
VSM V
IIDC V
IC V VIC
IS
VIDC
10.IOS2
11.VSOFF
12.tON
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
VR
IN GND OD
SC
NR
OS
VS
1
2
4
5
6
7
8
1
2
4
5
6
7
8
1
2
4
5
6
7
8
0.047 μF
V
3
VSC
IS +
A
IOS
3
3
VS
0.047 μF V
VOS
ΔVIN
VOS
VS 0.047 μF
●Timing Chart Input voltage between IN and VR ΔVIN(IN-VR)
VT
VSCON OD/SC terminal voltage VOD/VSC
OS terminal voltage VOS
0.8V
tON www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
4/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●Typical Performance Curves(reference data)
1.0
800
0.9
700 600
0.7
S u p p ly C u rre n t IS [u A ]
P o w e r D issip a tio n [W ]
0.8
105℃
0.6 0.5 0.4 0.3
500
-60℃ 25℃
400 300 200
0.2 100
0.1 0.0 0
25
50
85
75
0
100
125
0
150
5
10 15 20 Power Supply VS [V]
Ambient Temperature Ta [℃]
Figure 1 Derating curve
30
Figure 2 Circuit current - Supply voltage
40
0 O S term inal S ource C urrent I O S S O [uA ]
30
R a te of fluctua tion Δ [% ]
25
20
RIN=300
10 0 -10
RIN=1kΩ -20 -30 -40
-100
105℃ -200
25℃ -300
-60℃ -400
-500 -60
-40
-20
0
20
40
60
80
100
120
0
5
10
15
20
Ambient Temperature Ta [℃]
Power Supply VS [V]
Figure 3 Trip voltage fluctuation rate - Ambient temperature
Figure 4 OS terminal source current - Supply voltage
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
5/11
25
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
5
10
4
8 O S te rm in a l v o lta g e V O S [V ]
O p e ra tin g tim e t O N [m s ]
BD54123F
3
2
1
6
4
-60℃
2
105℃ 0
0 -60
-40
-20
0
20
40
60
80
100
0
120
1
2
Ambient Temperature Ta [℃]
Figure 5 Operating time - Ambient temperature
10
10
8
8
6
105℃
25℃
3 4 5 6 Power Supply VS [V]
7
8
9
10
Figure 6 Latch OFF supply voltage - Ambient temperature
O S te rm in a l v o lta g e V O S [V ]
O S te rm in a l vo lta g e V O S [V ]
25℃
-60℃
4
2
6
4
-60℃ 25℃
2
105℃ 0
0 0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
SC terminal input voltage VSCON [V]
Figure 7 SC ON voltage - Ambient temperature
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
1
2
3 4 5 6 Power Supply VS [V]
7
8
9
10
Figure 8 Latch ON supply voltage - Ambient temperature
6/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F
●Power Dissipation Power dissipation(total loss) indicates the power that can be consumed by IC at Ta=25℃(normal temperature).IC is heated when it consumed power, and the temperature of IC chip becomes higher than ambient temperature. The temperature that can be accepted by IC chip depends on circuit configuration, manufacturing process, and consumable power is limited. Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature) and thermal resistance of package (heat dissipation capability). The maximum junction temperature is typically equal to the maximum value in the storage temperature range. Heat generated by consumed power of IC radiates from the mold resin or lead frame of the package. The parameter which indicates this heat dissipation capability(hardness of heat release)is called thermal resistance, represented by the symbol θja℃/W.The temperature of IC inside the package can be estimated by this thermal resistance. Fig.9(a) shows the model of thermal resistance of the package. Thermal resistance θja, ambient temperature Ta, junction temperature Tj, and power dissipation Pd can be calculated by the equation below θja = (Tj - Ta) / Pd ℃/W ・・・・・ (Ⅰ) Derating curve in Fig.9(b) indicates power that can be consumed by IC with reference to ambient temperature. Power that can be consumed by IC begins to attenuate at certain ambient temperature. This gradient is determined by thermal resistance θja. Thermal resistance θja depends on chip size, power consumption, package, ambient temperature, package condition, wind velocity, etc even when the same of package is used. Thermal reduction curve indicates a reference value measured at a specified condition. Fig.10(a) show a derating curve for an example of BD54123F. LSIの 消 費 力 [W] Power dissipation of 電 LSI Pd (max)
θja=(Tj-Ta)/P ℃/W
P2
θja2 < θja1
周囲温度 Ta [℃] Ambient temperature
θ' ja2
P1
θ ja2 Tj ' (max) Tj (max)
θ' ja1
Chip surfaceチップ temperature 表面温度 Tj [℃]
0
消費電力Pd[W] P [W] Power dissipation
25
50
θ ja1 75
100
Ambient temperature 周 囲 温 度 Ta [℃ ]
125
150
(b) Derating curve
(a) Thermal resistance
Figure 9. Thermal resistance and derating
1.0 0.9 Power Dissipation [W]
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0
25
50
75 85 100
125
150
Ambient Temperature Ta [℃] (a) BD54123F
BD54123F
Derating curve slope
UNIT
5.5
mW/℃
When using the unit above Ta=25℃, subtract the value above per degree℃ Permissible dissipation is a value when FR4 glass epoxy board 70mm×70mm×1.6mm (cooper foil area below 3%) is mounted.
Figure 10. Derating curve
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
7/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●I/O equivalence circuit VCC VCC
VS
300O
Pin 1 [VR]
Pin 5 [SC]
100kO
ESD PRO TECT
Pin 2
VCC VCC
VS Pin 1
Pin 2 [IN]
VCC
300O
Pin 6 [NR]
100kO
Pin 7
VCC VCC Pin 6
Pin 3 [GND]
Pin 7 [OS]
VCC VCC
VCC line (Internal Power Supply Line)
Pin 4 [OD]
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
Pin 8 [VS]
8/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F
●Operational Notes 1) Absolute maximum ratings Absolute maximum ratings are the values which indicate the limits, within which the given voltage range can be safely charged to the terminal. However, it does not guarantee the circuit operation. 2) Power dissipation Pd Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to a rise in chip temperature, including reduced current capability. Therefore, please take into consideration the power dissipation (Pd) under actual operating conditions and apply a sufficient margin in thermal design. Refer to the thermal derating curves for more information. 3) Terminal short-circuits When the output and power supply terminals are shorted, excessive output current may flow, resulting in undue heat generation and, subsequently, destruction. 4) Ground terminal voltage All time, Ground terminal voltage should keep lowest voltage. In addition, please confirm whether there is not really a terminal becoming the voltage that is lower than GND including a transitional phenomenon. 5) Operation in a strong electromagnetic field Operation in a strong electromagnetic field may cause malfunctions. 6) Short-circuit between pins and erroneous mounting Incorrect mounting may damage the IC. In addition, the presence of foreign particles between the outputs, the output and the power supply, or the output and GND may result in IC destruction. 7) IC handing Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuations in the electrical characteristics due to piezo resistance effects. 8) Board inspection Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every process is recommended. In addition, when attaching and detaching the jig during the inspection phase, ensure that the power is turned off before inspection and removal. Furthermore, please take measures against ESD in the assembly process as well as during transportation and storage.
Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority.
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
9/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●Ordering Information
B
D
5
4
1
2
3
Part Number
F
E2 Packaging and forming specification E2: Embossed tape and reel (SOP8)
Package F: SOP8
●Physical Dimension Tape and Reel Information
SOP8 5.0±0.2 (MAX 5.35 include BURR)
+6° 4° −4°
5
0.3MIN
6
1 2
3
0.9±0.15
7
4.4±0.2
6.2±0.3
8
Tape
Embossed carrier tape
Quantity
2500pcs
Direction of feed
E2 The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
4
0.595 1.5±0.1
+0.1 0.17 -0.05 S S
0.11
0.1
1.27
1pin
0.42±0.1
Reel
(Unit : mm)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
●Marking Diagrams SOP8 (TOP VIEW)
5
4
1
2
3
LOT Number
1PIN MARK
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
10/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002
Datasheet
BD54123F ●Revision History Date
Revision
2012.10.29
001
Changes New Release
www.rohm.co.jp © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001
11/11
TSZ02201-0RCR1GZ00060-1-2 2012.10.29 Rev.002