The silicon photomultiplier and its possible applications P.Buzhan, B.Dolgoshein*, A.Ilyin, V.Kantserov, V.Kaplin, A.Karakash, F.Kayoumov, E.Popova, S.Smirnov (MEPhI, Moscow) L.Filatov, S.Klemin (“Pulsar” Enterprise, Moscow) *) Email:
[email protected] Supported by ISTC project No.1275-99 and INTAS grant No. YSF00-150
Silicon photomultiplier (SiPM)
42µm 20µm
pixels hν
Resistor Rn=400 kΩ
2 mV
Al Depletion Region 2 µm
R 50Ω
2 ns
substrate
Ubias ∼50V
For further details see: «Advanced study of SiPM» http://www.slac.stanford.edu/pubs/icfa/fall01.html B.Dolgoshein
SiPM main features: • Sensitive size 1x1mm2 on chip 1.5x1.5 mm2 • Gain 2⋅106 • Ubias~50V • Recovery time ~ 100 ns/pixel • Number of pixels: 576 • Nuclear counter effect: negligible (due to Geiger mode • Insensitive to magnetic field • Dynamic range ~103/mm2
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Single photoelectron (single pixel) spectra SiPM
VLPC
HPD
NIM A 477 (2002) 172-178
10000
0 pe 1 pe
1 pe
0 pe
160
1 pe
800 Pedestal
8000
2 pe
2 pe
120
600
2 pe
6000
Counts
NIM A 442 (2000) 164170
3 pe
4000
3 pe
80
400 3 pe
4 pe
2000
40
200 4 pe
0
0
100
200
300
400
0
0
200
400
600
800
Channel
Channel
0
200
300
400
500
600
Channel
SiPM: • excellent single photoelectron resolution • low ENF expected B.Dolgoshein
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More about pixel signal resolution: tens of photoelectrons 2000 1800
=46
1600 1400
Counts
1200 1000 800 600 400 200 0 200
400
600
800
1000
Channel
• SiPM consists of a large number of pixel photoelectron counters with binary readout for each pixel, working as analogue device • signal uniformity from pixel to pixel is quite good B.Dolgoshein
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20
40
30
10
20
5
10
One pixel gain M, 10
5
15
Detection efficiency ε, %
one pixel gain (exp. data) one pixel gain (linear fit) detection efficiency (λ=565nm)
operating voltage
0
0 0
1
Ubreakdown=48V
2
3
4
Overvoltage ∆U=U-Ubreakdown, V
Photon detection efficiency B.Dolgoshein
5
6
ε = QE⋅εgeom
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Photon detection efficiency Spectral dependence of quantum efficiency for different photodetectors (room temperature) 80 APD EG&G C30626E (NIM A428 (1999) 413-431)
QE, %
60
40
PMT XP2020Q number 40979 (according to Philips Photonics)
QE•εgeom
20
SiPM 0 200
300
400
500
600
700
800
Wavelengthλ, nm
SiPM:
ε = QE⋅εgeom, εgeom~0.3 (possible improvement up to ~ 0.5) B.Dolgoshein
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SiPM noise 0
+20 C
6
2,5x10
Noise frequency fnoise, Hz
6
2,0x10
6
1,5x10
0
0 C 6
1,0x10
0
-20 C 5
5,0x10
0
-60 C
0,0 0,0032
0,0034
0,0036
0,0038
0,0040
0,0042
0,0044
0,0046
0,0048
-1
Temperature 1/T, K
• Electronics noise - negligible (less than 0.1e - because the SiPM gain ~106) • dark rate noise Even for room temperature the contribution of the dark rate is rather low (less than 1 ph.e. for a gate of 50 ns) B.Dolgoshein
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SiPM gain: temperature and voltage dependence Photodetector
∆T for ∆M/M=1%
∆V/V0 for ∆M/M=1%
PMT
~10o
0.5V/1500V= =3⋅10-4
APD EG&G C30626E*
0.15o
0.4V/400V= =10-3
0.3o
0.04V/300V= =1.5⋅10-4
2.5o
0.05V/50V= =10-3
APD Hamamatsu S5345 (high capacitance)* SiPM M=2⋅106
*) for APDs M=100 /Karar et al NIM A428(1999) 413/ B.Dolgoshein
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SiPM dynamic range Dynamic range is limited due to finite total number of pixels m
Signal ~ m(1-exp(-Nph.e/m))
⇐
⇒ “Dispersion limit” of dynamic range: Nph.e/m < 1 B.Dolgoshein
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SiPM application for sci fiber MIP detection Kuraray SCSF-3HF(1500)M
100
NIM A 459 (2001) 440-447
APD
∅ 1mm =6 T=+20°C ε=15%
60 Events
∅0.75mm =22 T=+28°C QE=75%
Events
SiPM
80
0
80
120
NIM B 44 (1995) 332-339
40
VLPC 0.03
Events
20
0 100
40
200
300
400
500
600
0.02
∅0.835mm =10 T=6.5K ε=60%
0.01
C h a n n e ls
Channels
• SiPM is better than APD for room temperature • SiPM at room temperature is good enough even compared to VLPC at 6.5oK B.Dolgoshein
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SiPM application for scintillator + wavelength shifter (WLS) readout SiPM
300
Sr90 β-test PMT (FEU-143)
1 GeV pion beam signal noise
250
100
QE=10% 4.7 ph.e
80
7 ph.e
Events
Counts
200 150 100
60 40
50
20
0
0 0
50
100
150
200
0
Channels
100
200
300
400
500
600
C hannels
SiPM: ε=15%, M=2⋅106, Npixel=576, Ubias=53V Tile: Bicron BC-404, 50x50x5 mm3 WLS: Kuraray Y11 ∅1mm x 34 cm B.Dolgoshein
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More about Sci+WLS readout: TESLA Hadron Tile calorimeter beam test of 3tile+WLS cell 225 200
from 3 tiles: signal (19 ph.e.) noise
175 150 Counts
1 GeV π detection with 3 tiles of Bicron BC-404 and 1 mm diameter 34 cm long WLS Kuraray Y11 (with aluminized mylar mirror) coupled to 3 SiPMs
125 100 75 50 25 0 0
50
100
150
200
250
90% efficiency Channels -6 3.5•10 noise detection efficiency
B.Dolgoshein
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Timing by SiPM: possible application for Cherenkov Imaging Counters SiPM
PMT R-5320
1200 1000
Single Photoelectron
Counts
800 600
123 ps fwhm
400 200 0 500
1000
1500
2000
Time (ps)
SiPM: • position sensitive (~1 mm2) • a single photon detection capability with background hits density : 2⋅10-3 1/ns⋅mm2 (room temperature) 3⋅10-4 1/ns⋅mm2 (-50oC)
• insensitive to magnetic field • good time resolution (~50 ns rms)
FWHM: Laser (40 ps) + electronics (60 ps) => SiPM (100 ps) B.Dolgoshein
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Conclusion The R&D developments of SiPM show that after tuning of some parameters (photon detection efficiency, gain, timing, dynamic range etc.) one can consider the SiPM as a suitable photodetector for a number of applications
B.Dolgoshein
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