2014-01-17

SMT Multi TOPLED SMT Multi TOPLED Version 1.1 SFH 331

Features:

Besondere Merkmale:

• SMT package with red emitter (635 nm) and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately

• SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Applications

Anwendungen

• Data transmission • Lock bar • Infrared interface

• Datenübertragung • Wegfahrsperre • Infrarotschnittstelle

Ordering Information Bestellinformation Type:

Ordering Code

Typ:

Bestellnummer

SFH 331-JK

Q65110A2821

2014-01-17

1

Version 1.1

SFH 331

Maximum Ratings Grenzwerte Parameter

Symbol

Values

Unit

Bezeichnung

Symbol

Werte

Einheit

Operating and storage temperature range Betriebs- und Lagertemperatur

Top; Tstg

-40 ... 100

Junction temperature Sperrschichttemperatur

Tj

(max)

Forward current Durchlassstrom

IF

30

mA

Surge current Stoßstrom (tp ≤ 10 µs, D = 0.005)

IFSM

0.5

A

Reverse voltage Sperrspannung

VR

5

V

Total power dissipation Verlustleistung

Ptot

100

mW

Thermal resistance junction - ambient 1) page 15 Wärmewiderstand Sperrschicht - Umgebung

RthJA

450

K/W

RthJS

350

K/W

Collector current Kollektorstrom

IC

15

mA

Surge current Stoßstrom (τ ≤ 10 µs)

IFSM

0.075

A

Collector-emitter voltage Kollektor-Emitter-Spannung

VCE

35

V

Total power dissipation Verlustleistung

Ptot

165

mW

Thermal resistance 1) page 15 Wärmewiderstand 1) Seite 15

RthJA

450

K/W

°C 100

°C

LED

1) Seite 15

Thermal resistance junction - solder point Wärmewiderstand Sperrschicht - Lötpad Phototransistor Fototransistor

2014-01-17

2

Version 1.1

SFH 331

Note:

The stated maximum ratings refer to the specified chip regardless of the operating status of the other one.

Anm:

Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen.

Characteristics Kennwerte Parameter

Symbol

Values

Unit

Bezeichnung

Symbol

Werte

Einheit

LED (TA = 25 °C) Peak wavelength Emissionswellenlänge (IF = 10 mA)

λpeak

635

nm

Dominant wavelength Dominantwellenlänge (IF = 10 mA)

λdom

628

nm

Spectral bandwidth at 50% of Imax Spektrale Bandbreite bei 50% von Imax (IF = 10 mA)

∆λ

45

nm

Half angle Halbwinkel

ϕ

± 60

Rise and fall times of Ie ( 10% and 90% of Ie max) Schaltzeiten von Ie ( 10% und 90% von Ie max) (IF = 100 mA, tp = 10 µs, RL = 50 Ω)

tr / tf

300 / 150

ns

Capacitance Kapazität (VR = 0 V, f = 1 MHz)

C0

12

pF

Forward voltage Durchlassspannung (IF = 10 mA)

VF

2 (≤ 2.6)

V

Reverse current Sperrstrom (VR = 5 V)

IR

0.01 (≤ 10)

µA

Luminous intensity Lichtstärke (IF = 10 mA)

IV

6 (4 ... 12.5)

mcd

2014-01-17

3

°

Version 1.1

SFH 331

Parameter

Symbol

Values

Unit

Bezeichnung

Symbol

Werte

Einheit

Phototransistor Fototransistor (TA = 25 °C, λ = 950 nm) Wavelength of max. sensitivity Wellenlänge der max. Fotoempfindlichkeit

λS max

990

nm

Spectral range of sensitivity Spektraler Bereich der Fotoempfindlichkeit (S = 10% of Smax)

λ

440 ... 1150

nm

Radiant sensitive area Bestrahlungsempfindliche Fläche (∅ = 240 µm)

A

0.038

mm2

Dimensions of chip area Abmessung der Chipfläche

LxW

0.45 x 0.45

mm x mm

Half angle Halbwinkel

ϕ

Capacitance Kapazität (VCE = 0 V, f = 1 MHz, E = 0)

CCE

5

pF

Dark current Dunkelstrom (VCE = 20 V, E = 0)

ICE0

1 (≤ 50)

nA

Photocurrent Fotostrom (λ = 950 nm, Ee = 0.1 mW/cm2, VCE = 5 V)

IPCE

≥ 16

µA

Rise and fall time Anstiegs- und Abfallzeit (IC = 1 mA, VCE = 5 V, RL = 1 kΩ)

tr, tf

7

µs

Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung (IC = 5 µA, Ee = 0.1 mW/cm2)

VCEsat

150

mV

2014-01-17

4

± 60

°

Version 1.1

SFH 331

Diagrams

LED

Diagramme

LED

Relative Spectral Emission Relative spektrale Emission (typ) Irel = f(λ), TA = 25 °C, IF = 20 mA, V(λ) = Standard Eye Response Curve OHL02350

100 % Φ rel

80 Vλ 60

40

20 super-red

0 400

450

500

550

600

650 λ

2014-01-17

5

nm

700

Version 1.1

SFH 331

Forward Current Durchlassstrom IF = f(VF), TA = 25 °C

Relative Luminous Intensity Relative Lichtstärke Iv / Iv(10 mA) = f(IF), TA = 25 °C OHL02351

10 2

OHL02316

10 1

Ι F mA

ΙV Ι V(10mA) 10 0

10 1

5

5

super-red

10 -1

super-red

5 10 0 10 -2

5

5

10 -1 1.0

1.4

1.8

2.2

2.6

10 -3 10

3.0 V 3.4 VF

Permissible Pulse Handling Capability Zulässige Pulsbelastbarkeit IF = f(tp), TA = 25 °C, duty cycle D = parameter

IF

D=

mA

tP

tP

ΙF

IF

T

5 10

0

5

10

1

mA 10 ΙF

Max. Permissible Forward Current Max. zulässiger Durchlassstrom IF, max = f(TA )

OHL01686

10 3

-1

T

OHL01661

60 mA 50

D = 0.005 0.01 0.02 0.05 0.1

40

10 2 0.2

5

30

0.5

20

DC

10 10 1 -5 10

10 -4

10 -3

10 -2

10 -1

0

10 0 s 10 1

tp

2014-01-17

6

0

20

40

60

80 ˚C 100 TA

2

Version 1.1

SFH 331

Wavelength at Peak Emission Max. der spektralen Emission λpeak = f(TA), IF = 20 mA

Dominant Wavelength Dominantwellenlänge λdom = f(TA), IF = 20 mA OHL02104

690

OHL02105

690

λ peak

λ dom nm

nm

650

650

super-red

orange

610

610 590

yellow

590

570

green

570

pure-green 550

super-red

630

630

0

20

40

550

60

80 ˚C 100

orange yellow green pure-green 0

20

40

60

80 ˚C 100 TA

TA

Forward Voltage Durchlassspannung VF = f(TA), IF = 10 mA

Relative Luminous Intensity Relative Lichtstärke Iv / Iv(25 °C) = f(TA), IF = 10 mA OHL02106

2.4 VF

OHL02150

2.0 IV

V

I V (25 ˚C)

2.2

2.0

1.6

1.2

yellow green

green super-red orange yellow

1.8

0.8

pure-green

pure-green

1.6

1.4

0.4

0

20

40

60

0.0

80 ˚C 100 TA

2014-01-17

orange super-red

0

20

40

60

80 ˚C 100

Tj

7

Version 1.1

SFH 331

Diagrams

Phototransistor

Diagramme

Fototransistor

Relative Spectral Sensitivity Relative spektrale Empfindlichkeit

Photocurrent Fotostrom

Srel = f(λ)

IPCE = f(Ee), VCE = 5 V

Srel

100 %

OHF01924

10 3 µA

OHF00207

Ι PCE

80

10 2

70 60

4 3 2

10 1

50 40 30

10 0

20 10 0 400 500 600 700 800 900

2014-01-17

10 -1 -3 10

nm 1100

λ

10 -2

10 0

mW/cm 2 Ee

8

Version 1.1

SFH 331

Photocurrent Fotostrom

Photocurrent Fotostrom

IPCE = f(VCE), Ee = Parameter 10 mA

IPCE / IPCE (25°C) = f(TA), VCE = 5 V OHF01529

0

Ι PCE

Ι PCE

OHF01524

1.6

1

mW cm 2

0.5

mW cm 2

1.2

mW 0.25 cm 2

1.0

Ι PCE 25 1.4

10 -1

0.8

0.1

mW cm 2

0.6 0.4 0.2

10 -2

0

5

10

15

20

25

0 -25

30 V 35 V CE

Dark Current Dunkelstrom

75 C 100 TA

OHF01530

10 3 nA

Ι CEO

Ι CEO

10 0

10 2

10 -1

10 1

10 -2

10 0

2014-01-17

50

ICEO = f(TA), VCE = 5 V, E = 0 OHF01527

1

10 -3

25

Dark Current Dunkelstrom

ICEO = f(VCE), E = 0 10 nA

0

0

5

10

15

20

25

10 -1 -25

30 V 35 V CE

9

0

25

50

75 ˚C 100 TA

Version 1.1

SFH 331

Collector-Emitter Capacitance Kollektor-Emitter Kapazität

Total Power Dissipation Verlustleistung

CCE = f(VCE), f = 1 MHz, E = 0

Ptot = f(TA) OHF01528

5.0

OHF00871

200

C CE pF

mW P tot

4.0

160

3.5 120

3.0 2.5

80

2.0 1.5 1.0

40

0.5 0 10 -2

2014-01-17

10 -1

10 0

0

10 1 V 10 2 V CE

10

0

20

40

60

80 ˚C 100 TA

Version 1.1

SFH 331

LED Radiation Characteristics / Phototransistor Directional Characteristics LED Abstrahlcharakteristik / Phototransistor Winkeldiagramm Irel = f(ϕ) / Srel = f(ϕ) 40˚

30˚

20˚

10˚

0˚

ϕ

OHL01660

1.0

50˚

0.8

0.6 60˚ 0.4 70˚ 0.2 80˚ 0

90˚ 100˚ 1.0

0.8

0.6

0.4

0˚

20˚

40˚

60˚

80˚

Package Outline Maßzeichnung

3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083)

C

E

3.7 (0.146) 3.3 (0.130)

C

0.1 (0.004) typ

4

Package marking Emission color : super-red (SFH 331)

0.5 (0.020)

A

1

0.9 (0.035) 0.7 (0.028)

3

1.1 (0.043)

2

(2.4 (0.094))

3.4 (0.134) 3.0 (0.118)

0.8 (0.031) 0.6 (0.024)

2.1 (0.083) 1.7 (0.067)

0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6924

Dimensions in mm (inch). / Maße in mm (inch).

2014-01-17

11

100˚

120˚

Version 1.1

SFH 331

Package

Multi TOPLED

Gehäuse

Multi TOPLED

Recommended Solder Pad Empfohlenes Lötpaddesign 3.3 (0.130)

3.3 (0.130) 0.4 (0.016)

2.6 (0.102)

0.5 (0.020)

Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation

Kathoden Markierung / Cathode marking

7.5 (0.295)

1.5 (0.059)

4.5 (0.177)

1.1 (0.043)

Cu Fläche /