SMCJ Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC) size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown Voltage up to 550 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter
Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3)
IFSM
200
Amps
PM(AV)
5.0
Watts
VF
(Note 5)
Volts
TJ
-55 to +150
°C
TSTG
-55 to +175
°C
Steady State Power Dissipation @ TL = 75 °C Maximum Instantaneous Forward Voltage @ IPP = 100 A (For Unidirectional Units Only) Operating Temperature Range Storage Temperature Range 1. 2. 3. 4. 5.
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. Thermal Resistance Junction to Lead. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %. VF = 3.5 V on SMCJ5.0A through SMCJ90A and VF= 5.0 V on SMCJ100A through SMCJ495A.
Working Peak Reverse Voltage 5.0 = 5.0 VRWM (Volts) Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.
SMCJ Transient Voltage Suppressor Diode Series Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Bidirectional Device
3. For bidirectional devices with a VR of 10 volts or less, the IR limit is double. 4. For unidirectional devices with a VF max. of 3.5 V at an IF of 35 A, 0.5 Sine Wave of 8.3 ms Pulse Width.
Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.
SMCJ Transient Voltage Suppressor Diode Series Product Dimensions
Physical Specifications Case ...........................................Molded plastic per UL Class 94V-0 Polarity....................... Cathode band indicates unidirectional device No cathode band indicates bidirectional device Weight .................................................... 0.007 ounces / 0.21 grams
MM (INCHES)
Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.
SMCJ Transient Voltage Suppressor Diode Series Rating & Characteristic Curves Pulse Derating Curve
Maximum Non-Repetitive Surge Current Peak Forward Surge Current (Amps)
Peak Pulse Derating in Percent of Peak Power or Current
100
75
50
25 10 x 1000 Waveform as Defined by R.E.A.
200 100
Pulse Width 8.3 ms Single Half Sine-Wave (JEDEC Method) 10
0 25
0
50
75
100
125
150
175
1
200
2
5
Pulse Waveform
100
Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM.
50
10 x 1000 waveform as defined by R.E.A.
TA=25 °C TP
TA = 25 °C
Unidirectional
IRSM Half value= 2 Capacitance (pF)
IP, Peak Pulse Current (%)
50
10000
Peak value (IRSM)
100
20
Typical Junction Capacitance
TR=10 µs
1000 Bidirectional
100
0
0 0
1.0
2.0
3.0
0
4.0
10
Pulse Rating Curve
1000
Steady State Power Derating Curve
100
5.0
Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 10
1.0 5.0 mm Lead Areas
1.0 µs
10 µs
100 µs
TP, Pulse Width
1.0 ms
10 ms
RM(AV) Steady State Power Dissipation (W)
TA = 25 °C
0.1 0.1 µs
100 Standoff Voltage (Volts)
T, Time (ms)
PP, Peak Power (KW)
10
Number of Cycles at 60 Hz
Ambient Temperature ( °C)
4.0
3.0
2.0
1.0 60 Hz Resistive or Inductive Load 0.0 0
25
50
75
100
125
150
175
200
TL, Lead Temperature (°C)
Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.
CDDFN5-0504N TVS/Steering DiodeDiode Array Series SMCJ Transient -Voltage Suppressor Packaging Information The product will be dispensed in tape and reel format (see diagram below). P 0 P 1
d
T
E Index Hole
120 ° F
D2
W B
D1 D
P
A
Trailer
....... .......
End
C Device
....... .......
....... .......
Leader
....... .......
W1 Start
DIMENSIONS:
MM (INCHES)
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Symbol
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
Quantity per Reel
--
Devices are packed in accordance with EIA standard RS-481-A and specifications shown here.
REV. 02/13 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.