APM2600C N-Channel Enhancement Mode MOSFET

Pin Description

Features •

30V/6A,

D

D S

RDS(ON)=22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V

• • •

Super High Dense Cell Design

D

Reliable and Rugged

D

G

Top View of SOT-23-6

Lead Free and Green Devices Available (1,2,5,6) DD DD

(RoHS Compliant)

Applications •

(3)G

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

(4)S

N-Channel MOSFET

Ordering and Marking Information Package Code C : SOT-23-6 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device

APM2600 Assembly Material Handling Code Temperature Range Package Code

APM2600

C:

X - Date Code

M00X

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

1

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APM2600C Absolute Maximum Ratings Symbol

(TA = 25°C unless otherwise noted)

Parameter

Rating

VDSS

Drain-Source Voltage

30

VGSS

Gate-Source Voltage

±20

ID*

Continuous Drain Current

IDM*

300µs Pulsed Drain Current

IS*

Diode Continuous Forward Current

1.4

TJ

Maximum Junction Temperature

150

Storage Temperature Range

PD*

Maximum Power Dissipation

A

18

A °C

-55 to 150 TA=25°C

1.4

TA=100°C

0.5

Thermal Resistance-Junction to Ambient

RθJA*

V

6

VGS=10V

TSTG

Unit

W

90

°C/W

Note : *Surface Mounted on 1in pad area, t ≤ 5sec. 2

Electrical Characteristics Symbol

Parameter

(TA = 25°C unless otherwise noted)

Test Conditions

APM2600C Min.

Typ.

Max.

30

-

-

-

-

1

-

-

30

Unit

STATIC CHARACTERISTICS BVDSS

Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

VGS(th) IGSS RDS(ON) a

VSD

a

VDS=24V, VGS=0V TJ=85°C

V µA

Gate Threshold Voltage

VDS=VGS, IDS=250µA

1

1.5

2

V

Gate Leakage Current

VGS=±20V, VDS=0V

-

-

±100

nA

VGS=10V, IDS=6A

-

22

28

VGS=4.5V, IDS=4.5A

-

26

35

ISD=1.4A, VGS=0V

-

0.8

1.3

-

9

13

-

1.5

-

-

3.7

-

Drain-Source On-State Resistance Diode Forward Voltage

GATE CHARGE CHARACTERISTICS Qg

VGS=0V, IDS=250µA

Gate-Source Charge

Qgd

Gate-Drain Charge

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

V

b

Total Gate Charge

Qgs

mΩ

VDS=15V, VGS=4.5V, IDS=6A

2

nC

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APM2600C Electrical Characteristics (Cont.) Symbol

Parameter

DYNAMIC CHARACTERISTICS

Test Conditions

APM2600C

Unit

Min.

Typ.

Max.

-

1.7

-

-

800

-

-

120

-

-

90

-

-

5

10

-

9

17

-

25

46

-

5

10

-

16

-

ns

-

10

-

nC

b

RG

Gate Resistance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

Tr

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Tf

Turn-off Fall Time

trr

Reverse Recovery Time

Qrr

(TA = 25°C unless otherwise noted)

Reverse Recovery Charge

VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz

VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω

IDS=6A, dlSD/dt=100A/µs

Ω pF

ns

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

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APM2600C Typical Operating Characteristics Power Dissipation

Drain Current

1.6

7

1.4

6

ID - Drain Current (A)

Ptot - Power (W)

1.2 1.0 0.8 0.6 0.4

5 4 3 2 1

0.2

o

TA=25 C,VG=10V

o

0.0

TA=25 C 0

20

40

0

60

80 100 120 140 160

0

20

40

TJ - Junction Temperature (°C)

Safe Operation Area

Thermal Transient Impedance 2

Normalized Effective Transient

Rd s(o n) Lim it

1

ID - Drain Current (A)

80 100 120 140 160

TJ - Junction Temperature (°C)

50

10

60

300µs 1ms

1

10ms 100ms

0.1

Duty = 0.5 0.2 0.1 0.05

0.1

0.02 0.01

0.01

Single Pulse

DC 2

Mounted on 1in pad o RθJA : 90 C/W

o

T =25 C 0.01 A 0.01 0.1

1

10

1E-3 1E-4 1E-3 0.01

100

1

10

100

Square Wave Pulse Duration (sec)

VDS - Drain - Source Voltage (V)

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

0.1

4

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APM2600C Typical Operating Characteristics (Cont.) Output Characteristics

Drain-Source On Resistance 40

18

VGS= 4, 5, 6, 7, 8, 9, 10V

16

36

ID - Drain Current (A)

14

RDS(ON) - On - Resistance (mΩ)

3V

12 10 8 2.5V

6 4

32 28

VGS=4.5V

24

VGS=10V

20 16 12

2 2V

8

0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

2

4

VDS - Drain - Source Voltage (V)

6

8

10 12 14 16 18

ID - Drain Current (A)

Drain-Source On Resistance

Gate Threshold Voltage

50

1.8 IDS = 250µA

ID=6A

1.6

Normalized Threshold Voltage

RDS(ON) - On Resistance (mΩ)

45 40 35 30 25 20 15 10

1.4 1.2 1.0 0.8 0.6 0.4 0.2

1

2

3

4

5

6

7

8

9

0.0 -50 -25

10

VGS - Gate - Source Voltage (V)

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

0

25

50

75 100 125 150

TJ- Junction Temperature (°C)

5

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APM2600C Typical Operating Characteristics (Cont.) Drain-Source On Resistance

Source-Drain Diode Forward

1.8

20

VGS = 10V IDS = 6A

10

1.4

IS - Source Current (A)

Normalized On Resistance

1.6

1.2 1.0 0.8

o

Tj=150 C

o

Tj=25 C 1

0.6 o

RON@Tj=25 C: 22mΩ 0.4 -50 -25

0

25

50

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

75 100 125 150

TJ- Junction Temperature (°C)

VSD - Source - Drain Voltage (V)

Capacitance

Gate Charge 10

1200

Frequency=1MHz

1100

VGS - Gate - source Voltage (V)

1000

C - Capacitance (pF)

900 Ciss

800 700 600 500 400 300 200

Coss

0

5

10

15

20

25

7 6 5 4 3 2

0

30

0

4

8

12

16

20

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

ID = 6A

8

1

100 Crss 0

VDS= 15V

9

6

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APM2600C Package Information SOT-23-6 D e

E

E1

SEE VIEW A

b

c

0.25

A

L

0

GAUGE PLANE SEATING PLANE

A1

A2

e1

VIEW A

S Y M B O L

SOT-23-6

MAX.

MIN.

A A1

INCHES

MILLIMETERS MIN.

MAX.

1.45 0.00

0.057

0.15

0.000

0.006 0.051

A2

0.90

1.30

0.035

b

0.30

0.50

0.012

0.020

c

0.08

0.22

0.003

0.009

D

2.70

3.10

0.106

0.122

E

2.60

3.00

0.102

0.118

E1

1.40

1.80

0.055

e e1

0.071 0.037 BSC

0.95 BSC 1.90 BSC

0.075 BSC

L

0.30

0.60

0

0°

8°

0.012 0°

0.024 8°

Note : 1. Follow JEDEC TO-178 AB. 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side.

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

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APM2600C Carrier Tape & Reel Dimensions P0

P2

P1

A

B0

W

F

E1

OD0

K0

A0

A

OD1 B

B

T

SECTION A-A

SECTION B-B

H A

d

T1

Application

A

H

178.0± 2.00 50 MIN. SOT-23-6

T1

C

d

D

8.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20

P0

P1

P2

4.0±0.10

4.0±0.10

2.0±0.05

D0

20.2 MIN.

D1

T

1.5+0.10 1.0 MIN. -0.00

W

E1

8.0±0.30 1.75±0.10 A0

B0

F 3.5±0.05 K0

0.6+0.00 3.20±0.20 3.10±0.20 1.50±0.20 -0.40

(mm)

Devices Per Unit Package Type

Unit

Quantity

SOT-23-6

Tape & Reel

3000

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

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APM2600C Taping Direction Information SOT-23-6

USER DIRECTION OF FEED

AAAX

Reflow Condition

AAAX

AAAX

AAAX

AAAX

AAAX

(IR/Convection or VPR Reflow)

tp

TP

Critical Zone TL to TP

Ramp-up

Temperature

AAAX

TL

tL Tsmax

Tsmin Ramp-down ts Preheat

25

t 25 °C to Peak

Time

Reliability Test Program Test item SOLDERABILITY HOLT PCT TST

Copyright  ANPEC Electronics Corp. Rev. A.2 - Dec., 2008

Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9

9

Description 245°C, 5 sec 1000 Hrs Bias @125°C 168 Hrs, 100%RH, 121°C -65°C~150°C, 200 Cycles

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APM2600C Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate

Sn-Pb Eutectic Assembly

Pb-Free Assembly

3°C/second max.

3°C/second max.

100°C 150°C 60-120 seconds

150°C 200°C 60-180 seconds

183°C 60-150 seconds

217°C 60-150 seconds

See table 1

See table 2

10-30 seconds

20-40 seconds

6°C/second max.

6°C/second max.

6 minutes max. Time 25°C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface.

8 minutes max.

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures 3

Package Thickness

Volume mm