SiC POWER MODULES

Innovative Power Devices for a Sustainable Future Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society. Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon society and more affluent lifestyles. SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one.

Traction • Size and weight of traction inverters reduced • Regenerative performance enhanced • Noise reduced

Home appliances • Energy savings increased • Cooling system more compact • Equipment more compact/thinner

Industrial equipment • High torque, high speed, size reduced • Cooling system more compact • Manufacturing productivity enhanced

Merits of Incorporating SiC Power Modules Electric/hybrid vehicles • Power loss reduced • Cooling system more compact • Regenerative power used efficiently

Renewable energies • Energy conversion efficiency improved • Passive components downsized • Quieter high-speed operation

Building facilities • Power loss reduced • Greater layout freedom as the result of smaller equipment

1

SiC with superior characteristics Si

SiC

Gate

Gate

Source

Source

n+

p

n+ n-

Power loss reduced

Source

p

p

Source

n+

n+

n-

p

SiC substrate Drain electrode

SiC MOSFET structure

1 10

Current flow Si substrate

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.

Large reduction in electrical resistance

Drain electrode

Si MOSFET structure

High-temperature operation SiC

Conduction band

High temperature

Band gap Band gap is approx.

3 times that of Si

When the temperature increases, electrons are exited to the conduction band and the leakage current increases. At times, this results in abnormal operation. However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures.

Valence band

High-speed switching operation

Hybrid SiC power modules Si SiC

Turn-on switching waveform

High-speed switching operations realized Ic:500A/div

With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized.

Vce:250V/div t:1µs/div

Heat dissipation Si

SiC

SiC has three times the heat conductivity of silicon, which improves heat dissipation.

Thermal conductivity rate is approx. 3 times that of Si

SiC power modules appropriated by application Application

Product name Hybrid SiC-IPM Full SiC-IPM Full SiC Power Modules

Industrial equipment

Traction Home appliances

Hybrid SiC Power Modules for High-frequency Switching Applications Large Hybrid SiC DIPIPMTM for PV Application Hybrid SiC Power Modules Hybrid SiC DIPPFCTM Full SiC DIPPFCTM

Model PMH200CS1D060 PMH75-120-Sxxx＊ PMF75-120-Sxxx＊ FMF400BX-24A FMF800DX-24A CMH100DY-24NFH CMH150DY-24NFH CMH200DU-24NFH CMH300DU-24NFH CMH400DU-24NFH CMH600DU-24NFH PSH50YA2A6 CMH1200DC-34S PSH20L91A6-A PSF20L91A6-A

Rating Voltages[V] Current[A]

Connection

States

Insert pages

600

200

6-in-1

1200

75

6-in-1

1200 1200

4-in-1 2-in-1

2-in-1

Sample available

600 1700

400 800 100 150 200 300 400 600 50 1200

Commercially available Sample available Sample available Sample available Sample available

600

20Arms

1200

Commercially Commercially Commercially Interleaved Commercially 4-in-1 2-in-1

available available available available

P3 P4

P5

P6 P7

＊Tentative No.

2

600V/200A Hybrid SiC-IPM for Industrial Equipment PMH200CS1D060 New SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions Power loss reduction of approx. 20% contributes to enhancing the performance of industrial machinery Features • Hybrid combination of SiC-SBD and IGBT with current and temperature sensors implemented for IPM supplies high functionality and low loss enabling high torque and motor speed • Recovery loss (Err) reduced by 95% compared to the conventional product* • Package compatible with the conventional product* making replacement possible * Conventional product: Mitsubishi Electric S1 Series PM200SC1D060

Internal circuit diagram

: SiC-SBD

FWD_SW FWD_DC

Power loss comparison

IGBT_SW IGBT_DC

P Approx.

V

Power loss [W]

U

20%

W

reduction

Si-IPM

Hybrid SiC-IPM

Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1, three-phase modulation, Tj=125˚C

N

1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment PMH75-120-Sxxx＊/PMF75-120-Sxxx＊ Sample available ＊Tentative No.

Built-in drive circuit and protection functions realize high functionality Features

Main specifications

• Incorporates SiC-MOSFET with current sensor and built-in drive circuit and protection functions to deliver high functionality • Significant reduction in power loss compared to the conventional product* • Package compatible with the conventional product*

Rating Mounted Functions

1200V/75A 6in1 • Built-in drive circuit • Under-voltage protection • Short-circuit protection • Over temperature protection (Monitoring IGBT chip surface)

* Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120

Internal circuit diagram Full SiC-IPM

V

W

Gate

Sense N

3

Source

FWD_SW FWD_DC

Power loss comparison

SiC-MOSFET with current sense terminal Drain

U

:SiC-SBD

Power loss [W]

P

:SiC-MOSFET

Approx.

Approx.

reduction

reduction

25%

Si-IPM

Hybrid SiC-IPM

Tr_SW Tr_DC

70%

Full SiC-IPM

Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9, Modulation=1 ,three-phase modulation, Tj=125˚C

1200V/400A・1200V/800A Full SiC Power Modules for Industrial Equipment FMF400BX-24A/FMF800DX-24A Sample available Contributes to reducing size/weight of industrial-use inverters with the mounting area reduced by approx. 60% Features • Power loss reduced approx. 70% compared to the conventional product* • Low-inductance package adopted to deliver full SiC performance • Contributes to realizing smaller/lighter inverter equipment by significantly reducing the package size and realizing a mounting area approx. 60% smaller compared to the conventional product* ＊Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs

Product lineup Applications

Industrial equipment

Rated voltage

Comparison with conventional product package Reted current

Circuit configration

400A

4-in-1

800A

2-in-1

1200V

Package size (D ×W)

Si Power module 1200V/400A(2-in-1) 2pcs 92.3 × 121.7mm

Full SiC Power module 1200V/400A(4-in-1) 1pcs or 1200V/800A(2-in-1) 1pcs

Approx.

60%

Footprint reduction

Internal circuit diagram 1200V/400A Full SiC Power module

:SiC-MOSFET

:SiC-SBD

FWD_SW FWD_DC

Tr_SW Tr_DC

1200V/800A Full SiC Power module

:SiC-MOSFET

:SiC-SBD

FWD_SW FWD_DC

Tr_SW Tr_DC

Power loss comparison

Approx.

70%

reduction

IGBT module(Si)

Full SiC module

Condition:Vcc=600V, Io=110Arms (assuming a 55kW inverter), fc=15kHz, P.F=0.8, Modulation=1 ,three-phase modulation, Tj=125˚C

1200V/800A Full SiC Power module

Power loss [W]

Power loss [W]

1200V/400A Full SiC Power module

Approx.

70%

reduction

IGBT module(Si)

Full SiC module

Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, Modulation=1 ,three-phase modulation, Tj=125˚C

4

Hybrid SiC Power Modules for High-frequency Switching Applications Sample available For optimal operation of power electronics devices that conduct high-frequency switching Contributes to realizing highly efficient machinery that is smaller and lighter by reducing power loss and enabling higher frequencies Features • Power loss reduction of approx. 40% contributes to higher efficiency, smaller size and weight reduction of total system • Suppresses surge voltage by reducing internal inductance • Package compatible with the conventional product* * Conventional product: Mitsubishi Electric NFH Series IGBT Modules

Internal circuit diagram

FWD_SW FWD_DC

Power loss comparison

E2

C1

E1

C2E1

Tr_SW Tr_DC

Approx.

40%

Power loss [W]

E2

G2

:SiC-SBD

reduction

G1

CM600DU-24NFH (Si-IGBT)

CMH600DU-24NFH (Hybrid SiC)

Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1, three-phase modulation, Tj=125˚C

Recovery waveform (FWD)

Product lineup Applications

CM600DU-24NFH (Si-IGBT)

IE:100A/div CMH600DU-24NFH (Hybrid SiC)

Industrial equipment

Model

Rated voltage

Rated Circuit External size current configuration (DxW)

CMH100DY-24NFH

100A

48 × 94mm

CMH150DY-24NFH

150A

48 × 94mm

CMH200DU-24NFH

62 × 108mm

200A 1200V

2-in-1

CMH300DU-24NFH

300A

62 × 108mm

CMH400DU-24NFH

400A

80 × 110mm

CMH600DU-24NFH

600A

80 × 110mm

200ns/div

5

600V/50A Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 New More efficient power modules for PV power conditioner applications Features ・Hybrid structure achieved with SiC Schottky barrier diode and 7th-generation. IGBT chips ・Power loss reduction of approx. 25% compared to the conventional product* ・Helps downsize PV inverter system thanks to modified short-circuit protection scheme *Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99

Internal circuit diagram

:SiC-SBD

Power loss comparison

FWD_SW FWD_DC

IGBT_SW IGBT_DC

P VWP1 LVIC

WP

LVIC

VP

VWPC

VVPC

V W

VN1 VN

Approx.

Power Loss [W]

VVP1

25%

reduction

LVIC

WN FO VNC

CFO

CIN

N W N V

VSC

Si DIPIPMTM

Hybrid SiC DIPIPMTM

Condition：Vcc=300V, Io=25Arms, PF=0.8, fc=10kHz, Tj=125℃

1700V/1200A Hybrid SiC Power Modules for Traction Inverters CMH1200DC-34S New High-power/low-loss/highly reliable modules appropriate for use in traction inverters Features

Main specifications

• Power loss reduced approximately 30% compared to the conventional product* • Highly reliable design appropriate for use in traction • Package compatible with the conventional product*

Module Si-IGBT @150˚C SiC-SBD @150˚C

150˚C Max.operating temperature 4000Vrms Isolation voltage 2.3V Collector-emitter saturation voltage turn-on 140mJ Switching loss 850V/1200V turn-off 390mJ 2.3V Emitter-collector voltage 9.0µC Capacitive charge

* Conventional product: Mitsubishi Electric Power Module CM1200DC-34N

Internal circuit diagram

:SiC-SBD

4

Power loss comparison

FWD_SW FWD_DC

IGBT_SW IGBT_DC

2 (C2) C2

E1 G1

G2

Si-IGBT

Si-IGBT

C1

Approx.

Power loss [W]

(E1)

30%

reduction

E2

3

(C1)

1

(E2)

CM1200DC-34N

CMH1200DC-34S

Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1, three-phase modulation, Tj=125˚C

6

Hybrid SiC DIPPFCTM/Full SiC DIPPFCTM for Home Appliances PSH20L91A6-A New / PSF20L91A6-A New Utilizing SiC enables high-frequency switching and contributes to reducing the size of peripheral components Features • Incorporating SiC chip in the Super mini package widely used in home appliances • The SiC chip allows high-frequency switching (up to 40kHz) and contributes to downsizing the reactor, heat sink and other peripheral components • Adopts the same package as the Super mini DIPIPMTM to eliminate the need for a spacer between the inverter and heat sink and to facilitate its implementation

Power loss comparison

Internal block diagram (Full SiC DIPPFCTM) :SiC-MOSFET

L1 L2

LVIC

CFo GND

N2

Cin1 Cin2

N1

45%

reduction

Si DIPPFC™

Full SiC DIPPFC™

Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C

Interleaved PFC circuit configuration (for Hybrid SiC DIPPFCTM)

:SiC-SBD

Hybrid SiC DIPPFC™ P2 L1

Vin1

MCU

High-frequency drive enables reactor sized to be reduced

P1

VD Vin2

L2

LV IC

Fo CFo

Si-IGBT

N2 AC input N1

GND

+

To inverter part

PFC circuit and drive IC integrated making it possible to reduce size including smaller mounting area and simplified layout pattern

Merits of combined use of SiC DIPIPMTM and DIPPFCTM Interleave PFC circuit in the case of discrete element configuration

In the case of using SiC DIPIPMTM and DIPPFCTM configuration

High adjustment spacer Di Tr PFC control and protection circuit parts

Di

Tr

No need to use spacer for adjusting Merit 1 height when attaching heat sink

7

Tr_DC

Approx.

Power loss [W]

Vin1 Fo

Tr_SWoff Tr_SWon

P1 P2

VD Vin2

FWD_SW FWD_DC

:SiC-SBD

DIPIPMTM

SiC DIPPFCTM

DIPIPMTM

Integration of PFC circuit and drive IC made it possible to Merit 2 reduce the mounting area and make component more compact such as simplifying the wiring pattern

SiC Power Module Lineup Unit : mm

1200V/75A Hybrid/Full SiC-IPM for Industrial Use PMH75-120-Sxxx＊ PMF75-120-Sxxx＊

32.75

23

23

7

(3)

23

12 (SCREWING DEPTH) 7

94

17 21.14 18.49

23

Hybrid SiC Power Modules for High-frequency Switching Applications CMH 200DU-24NFH CMH 300DU-24NFH 7.5

17

12

6.72

22 39

3.5

6

6-M6 NUTS

110 93±0.25

(8.5)

7.5

14

23.72

Hybrid SiC Power Modules for High-frequency Switching Applications CMH 400DU-24NFH CMH 600DU-24NFH

Tc measured point

108 93±0.25 14

14

22 39

(8.5)

4 56

30 31 32

4

12.7

40

34

2

33 3

1

Type name

18

SCREWING DEPTH MIN. 7.7

11.85±0.2

55.2±0.3

6-φ7 MOUNTING HOLES

14x2.54(-35.56) 0.45 0.45

SCREWING DEPTH MIN. 16.5

5±0.2

16

0.45

0.2

0.45 0.25

8

8.6

62±0.25 80

8-0.6

+1

2

18±0.2 44±0.2 57±0.2

4-C1.2

25

14±0.5

2.7

16±0.2 40±0.2 53±0.2

17.5 6 15 6

Lot No. 3MIN

38 -0

0.8

1

2.54±0.2

6-M4 NUTS

(9)

18.25

0.28

70 ±0.3 79 ±0.5

1

18

10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3

1.8

38±0.5 20x1.778(-35.56) 35±0.3 14-0.5

0.28 1.778±0.2

(1)

4-M8 NUTS

57±0.25

2-ø4.5±0.2

TAB#110. t=0.5

18

LABEL

29

Type name , Lot No.

31±0.5

130±0.5

7

Hybrid/Full SiC DIPPFCTM for Home Appliances PSH20L91A6-A / PSF20L91A6-A

20±0.1

23

18 19 12 13 14 15 1617 20 7 8 9 1011 41 42

18

21.2 8.5

4

B

57±0.25 1

21.5

(2.2)

A

2.54±0.3 2.8

7

1. 6

A

(2.54×10)

A

18

2R

A

B

LABEL

124±0.25 140±0.5

A

A

A

2.8

14 25

TAB#110, t=0.5

1700V/1200A Hybrid SiC Power Modules for Tranction Inverters CMH1200DC-34S

A = 2.54±0.3 B = 5.08±0.3

B

B

7 18

14 25

+1.0

+1

Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 B

7 18

7.5

18

14

3-M6 NUTS

8.5

TAB#110, t=0.5

16

LABEL

B

4-φ6.5 MOUTING HOLES

22

7

29 –0.5

16

2.5

4

21.2 7.5

29 –0.5

+1.0

7

21.5

29 –0.5

2-φ6.5MOUNTING HOLES

16

25

24±0.5

25 3-M6 NUTS

4-φ6.5 MOUNTING HOLES

HEAT SINK SIDE

5.5±0.5

3-M5 NUTS

12

12

12 80±0.25

30±0.2

12

9.25 (10)

(22.2)

17.5 6 15 6 48±0.25 62 7

4

25.7 18

8.85 8.25

18

13

48

4

23

3.81 3.81 3.81

19- 0.5

(9)

17

3.81 3.81

12

＊Tentative No.

Hybrid SiC Power Modules for High-frequency Switching Applications CMH100DY-24NFH CMH150DY-24NFH

41.35 44

13.64

6.5

LABEL

42.7

31.2 30 28

3

10.75

7.75

13.64

6-M5 NUTS

SCREWING DEPTH 7.5 15- 0.64

4-φ5.5 MOUNTING HOLES

(21.14)

19

19

6.5

19

13

19.05

121.7 110±0.5 94.5 39 22

57.5 50±0.5

19

9

57.15

92.3 62

19

5-M4 NUT

5

18.8

3.75

10 15

2 11.6 1.1

2.5

7

1

32

2-R7

13.5

9

4.06

55

2-φ 5.5 MOUNTING HOLES

15

2-φ 5.5 MOUNTING HOLES

16 15.25 3-2 6-2

13

10

25

5.57

106

16 3-2

12

8.5 1.65 50 39

7

67.4

17.5

5-2.54

10.16

14.5 17.5

4

10.16

3.25 19.75 16 19.75 3-2

16.5

2-2.54

1

10.16

2-2.54

2-2.54

23.79

120

7

(20.5) 13

11

106 ±0.3

11.75

120 7

1200V/400A，1200V/800A Full SiC Power Modules for Industrial Use FMF400BX-24A FMF800DX-24A

31

600V/200A Hybrid SiC-IPM for Industrial Use PMH200CS1D060

Terminology SiC

Silicon Carbide

FWD-SW

Diode switching loss

DIPIPM

Dual-In-Line Package Intelligent Power Module

Tr-SW

Transistor switching loss

IPM

DIPPFC SBD

MOSFET IGBT Tr

Intelligent Power Module

Dual-In-Line Package Power Factor Correction Schottky Barrier Diode

Metal Oxide Semiconductor Field Effect Transistor Insulated Gate Bipolar Transistor Transistor

FWD-DC Tr-DC

IGBT-SW IGBT-DC PV

CSTBT

Diode DC loss

Transistor DC loss

IGBT switching loss IGBT DC loss Photovoltaics

Mitsubishi Electric’s unique IGBT that makes use of the carrier cumulative effect

8

Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating Them Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, we succeeded in developing various elemental technologies. In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device. Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery. We will continue to provide competitive SiC power modules with advanced development and achievements from now on.

2010

January 2010 Developed large-capacity power module equipped with SiC diode

Early

1990s

2011

January 2011 Verified highest power conversion efficiency＊1 for solar power generation system power conditioner (domestic industry)

October 2011 Commercialized SiC inverter for use in railcars

Developed new material, silicon-carbide (SiC) power semiconductor, maintaining a lead over other companies

2000s

October 2010 Launched "Kirigamine" inverter air conditioner

Various elemental technologies developed

2006

January 2006 Successfully developed SiC inverter for driving motor rated at 3.7kW

2009

February 2009 Verified 11kW SiC inverter, world's highest value＊1 with approx. 70% reduction in power loss

November 2009 Verified 20kW SiC inverter, world's highest value＊1 with approx. 90% reduction in power loss

9

Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO).

2012

March 2012 Developed motor system with built-in SiC inverter＊2

September 2012 Verified built-in main circuit system for railcars

2014

February 2014 Developed EV motor drive system with built-in SiC inverter＊2

May 2014 Began shipping samples of hybrid SiC power modules for high-frequency switching applications

Contributing to the realization of a low-carbon society and more affluent lifestyles

November 2014 Launch Large Hybrid SiC DIPIPMTM for PV Application

2015

January 2015 Launched power conditioner for PV equipped with full SiC-IPM

2013

February 2013 Developed SiC for application in elevator control systems＊2

July 2012 Began shipping samples of hybrid SiC power modules

March 2013 Delivered auxiliary power supply systems for railcars

February 2013 Developed technologies to increase capacities of SiC power modules＊2

May 2013 Launched SiC power modules

December 2013 Launched railcar traction inverter with full SiC power module

December 2012 Launched CNC drive unit equipped with SiC power module

＊1 Researched on press releases by Mitsubishi Electric. ＊2 Currently under development, as of May 2015. * The year and month listed are based on press releases or information released during the product launch month in Japan.

10

SiC POWER MODULES

Please visit our website for further details.

www.MitsubishiElectric.com

Revised publication, effective May 2015. Superseding publication of HG-802B Sep. 2014. Specifications subject to change without notice. HG-802B

2015