PESD5V0V1BLD. Very low capacitance bidirectional ESD protection diode

PESD5V0V1BLD Very low capacitance bidirectional ESD protection diode Rev. 1 — 7 December 2010 Product data sheet 1. Product profile 1.1 General desc...
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PESD5V0V1BLD Very low capacitance bidirectional ESD protection diode Rev. 1 — 7 December 2010

Product data sheet

1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

1.2 Features and benefits „ „ „ „ „ „

Bidirectional ESD protection of one line Ultra small SMD plastic package Solderable side pads Package height typ. 0.37 mm Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W

„ „ „ „ „ „

Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 4.8 A AEC-Q101 qualified

„ „ „ „

Communication systems Portable electronics 10/100 Mbit/s Ethernet FireWire

1.3 Applications „ „ „ „

Computers and peripherals Audio and video equipment Cellular handsets and accessories Subscriber Identity Module (SIM) card protection

1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol

Parameter

VRWM

reverse standoff voltage

Cd

diode capacitance

Conditions f = 1 MHz; VR = 0 V

Min

Typ

Max

Unit

-

-

5

V

-

11

13

pF

PESD5V0V1BLD

NXP Semiconductors

Very low capacitance bidirectional ESD protection diode

2. Pinning information Table 2.

Pinning

Pin

Description

1

cathode 1

2

cathode 2

Simplified outline

Graphic symbol

[1]

1 1

2

2 006aab041

Transparent top view

[1]

The marking bar indicates pin 1.

3. Ordering information Table 3.

Ordering information

Type number

Package

PESD5V0V1BLD

Name

Description

Version

-

leadless ultra small plastic package; 2 terminals; body 1 × 0.6 × 0.4 mm

SOD882D

4. Marking Table 4.

Marking codes

Type number

Marking code[1]

PESD5V0V1BLD

0111 0000

[1]

For SOD882D binary marking code description, see Figure 1.

4.1 Binary marking code description CATHODE BAR

READING DIRECTION VENDOR CODE

READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION

006aac477

Fig 1.

PESD5V0V1BLD

Product data sheet

SOD882D binary marking code description

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 7 December 2010

© NXP B.V. 2010. All rights reserved.

2 of 14

PESD5V0V1BLD

NXP Semiconductors

Very low capacitance bidirectional ESD protection diode

5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol

Parameter

Conditions

PPP

peak pulse power

tp = 8/20 μs

IPP

peak pulse current

tp = 8/20 μs

Min

Max

Unit

[1]

-

45

W

[1]

-

4.8

A

Per diode

Per device Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

[1]

Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol

Parameter

Conditions

VESD

electrostatic discharge voltage

IEC 61000-4-2 (contact discharge)

[1]

Min

Max

Unit

-

30

kV

machine model

-

2

kV

MIL-STD-883 (human body model)

-

16

kV

Device stressed with ten non-repetitive ESD pulses.

Table 7.

ESD standards compliance

Standard

PESD5V0V1BLD

Product data sheet

[1]

Conditions

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model)

> 8 kV

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 7 December 2010

© NXP B.V. 2010. All rights reserved.

3 of 14

PESD5V0V1BLD

NXP Semiconductors

Very low capacitance bidirectional ESD protection diode

001aaa631

IPP

001aaa630

120

100 % 90 %

100 % IPP; 8 μs

IPP (%) 80

e−t 50 % IPP; 20 μs

40

10 %

0

10

20

30

30 ns

40 t (μs)

Fig 2.

t

tr = 0.7 ns to 1 ns

0

60 ns

8/20 μs pulse waveform according to IEC 61000-4-5

Fig 3.

ESD pulse waveform according to IEC 61000-4-2

6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol

Parameter

VRWM

reverse standoff voltage

IRM

reverse leakage current

VRWM = 5 V

VBR

breakdown voltage

Cd VCL rdyn

PESD5V0V1BLD

Product data sheet

Conditions

Min

Typ

Max

Unit

-

-

5

V

-

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