Persistent Efforts to Overcome the Challenge of EUVL

Soichi Inoue EUVL Infrastructure Development Center, Inc.

EUVL Workshop 2012, June 4, 2012

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Agenda     

Trend of LSI Downscaling Lithography Prospect Technical Challenge for EUVL Role of EIDEC Persistent Efforts for Each Technology Development  Mask  Resist / Process  Source / Scanner  Summary

EUVL Workshop 2012, June 4, 2012

2

More Moore ! 40

Number of transistors in a chip

( Log2 )

35 30 25

100B

Toshiba Flash memory

10B

■

▲

1B 0.1B

●◆ ◆

( Log10 )

● ● ◎▽ ◆ ◆

●

15

●

Intel CPU Ivy Bridge 1.4B Tr.

●

20

10

★

1T

Fujitsu CPU in Supercomputer “Kei” 0.76B Tr.

● ●

◆ Panasonic DVD SoC ▽ Renesas Mobile SoC ◎ Rohm Graphic SoC

5

(Courtesy by JEITA)

0

1970

1980

1990

2000

2010

2020

2030

Intel CPU plots, except Iyv Bridge, are shown in http://www.intel.com/jp/technology/mooreslaw/index.htm?iid=jpIntel_tl+moores_law

EUVL Workshop 2012, June 4, 2012

3

Trend of Downscaling Planar Si-channel CMOS

Booster -scaling

Dennard -scaling

3D -scaling

High-μ -scaling

Quantum -scaling シングルピラー マルチピラー

Gate length (nm)

104

▲ Lg SiON-base

▲

103

▲

High-k Low-k Metal G Strain

▲▲ ▲▲

102 Cost Down

Fin SOI

▲ ▲ ▲ ▲▲

101

1

Ge III-V

Lg=6nm @2020

▲ High Performance

Low Power Consumption

Nanowire Nanopillar Nanosheet

放熱経路

放熱経路

？ Lg=1nm @2030

★

1nm = Four Si-atom length 0.1

1970

1980

1990

2000

EUVL Workshop 2012, June 4, 2012

2010

2020

2030 4

How About Is Millennial Roadmap ?

Gold Stamp (AD100) Dimension ~ 1mm

EUVL Workshop 2012, June 4, 2012

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Lithography Prospect hp70nm hp56nm hp43nm hp3ｘnm hp2ｘnm Next (=hp1ｘnm)

ArF

(DRY)

ArF

EUVL

(Water Immersion)

ArF Immersion Extendibility

Double Patterning Technology

Nanoimprint DSA  Technology direction will be decided by development schedule, performance and economics.  EUV lithography will be the main stream technology from cost and extendibility viewpoint. EUVL Workshop 2012, June 4, 2012

ML2

6

Scenario of EUV Insertion EUV NA0.33

EUV NA0.4x

EUV NA0.6x ?

35 DRAM

Half Pitch [nm]

30 25

Flash

?

ArF imm＋DPT

Logic-M1

EUV NA0.33 + RET

20 15

ArF imm＋DPT

? EUV NA0.4x + RET

ArF imm＋QPT EUV NA0.6x + RET

EUV NA0.33 + DPT

10

ArF imm＋QPT

EUV NA0.4x + RET EUV NA0.4x + DPT λ = 6.x nm ?

5

0 2010

2012

2014

2016

EUVL Workshop 2012, June 4, 2012

2018

2020 7

Agenda     

Trend of LSI Downscaling Lithography Prospect Technical Challenge for EUVL Role of EIDEC Persistent Efforts for Each Technology Development  Mask  Resist / Process  Source / Scanner  Summary

EUVL Workshop 2012, June 4, 2012

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Technical Challenge for EUVL Source

Mask

 High power: 250W @IF  Stability  Long Life of Collector Mirror

 Blank Inspection  Patterned Mask Inspection  Defect Review System  Particle Free Handling

Scanner  Field data  Higher quality / Long lifetime of optical components

Resist Courtesy by EUVA

EUVL Workshop 2012, June 4, 2012

   

Resolution < 20nmHP Sensitivity < 10mJ/cm2 LER < 2nm Lower outgassing

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Agenda     

Trend of LSI Downscaling Lithography Prospect Technical Challenge for EUVL Role of EIDEC Persistent Efforts for Each Technology Development  Mask  Resist / Process  Source / Scanner  Summary

EUVL Workshop 2012, June 4, 2012

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Project Start : 2011-4-1 2011

EIDEC Outlook

2013

2012

2014

Phase-1 hp 16nm

2015

Phase-2 hp 11nm *AIST Super Clean Room @ Tsukuba

◆ Focus Area Blank/Mask defect inspection

Tsukuba

Resist development

~60Km Tokyo

◆ Programs（EIDEC Project is supported by METI and NEDO) 1. Blank Inspection 2. Patterned Mask Inspection 3. Resist Materials SFET 4. Resist Outgassing Control

ABI

Member Companies (16) (Mask/Blank) ・AGC ・DNP ・HOYA ・TOPPAN (Resist/Material) ・FUJIFILM ・JSR ・Nissan Chemical ・Shin-Etsu Chemical ・TOK (Device) ・Intel (USA) ・Renesas Electronics ・Samsung (Korea) ・SanDisk (USA) ・SK Hynix (Korea) ・TOSHIBA ・TSMC (Taiwan) ◆ JD Companies (2) ・EBARA ・Lasertec ◆ JD Research Institutes (3) ・AIST ・Osaka University ・University of Hyogo

*AIST: National Institute of Advanced Industrial Science and Technology EUVL Workshop 2012, June 4, 2012

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Agenda     

Trend of LSI Downscaling Lithography Prospect Technical Challenge for EUVL Role of EIDEC Persistent Efforts for Each Technology Development  Mask  Resist / Process  Source / Scanner  Summary

EUVL Workshop 2012, June 4, 2012

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Status of Mask Infrastructure Blank Inspector

Defect Reviewer EUV-AIMS (13.5nm)

193 nm EUV (Bright Field)

EUV (Dark Field)

Patterned Mask Inspector

199 nm e-Beam (SEM, Projection)

Defect Repair Tool

193 nm EUV (13.5 nm) GFIS EUVL Workshop 2012, June 4, 2012

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Challenges for “Effective” Phase Defect-free Blank

Defect Reduction

CD Impact (Real Defect Traceability)

Phase Defect

Defect Review & Characterization

Defect Inspection

Defect Mitigation

EUVL Workshop 2012, June 4, 2012

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Dark Field Actinic Blank Inspector (ABI)

13.5nm 193nm 266nm 488nm

EUVL Workshop 2012, June 4, 2012

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Progress of Actinic Blank Inspector (ABI) Higher sensitivity and throughput (16 and 11nm hp)

MIRAI ABI tool

Sensitivity [nm]

30 40 50 60

EIDEC ABI tool

30

45

MIRAI ABI tool

60

EIDEC ABI tool

300

Inspection Time (Min)

EUVL Workshop 2012, June 4, 2012

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Current Status of Phase Defect

EUVL Workshop 2012, June 4, 2012

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Requirement: Defect Hiding Process

Phase Defect

 It takes a long time to achieve perfect blanks (no phase defect) with high yield.  Industry requires to identify precise location of phase defects to mitigate them by shifting patterns and hiding them.

EUVL Workshop 2012, June 4, 2012

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New Feature: Defect Review Mode Pixel size 460nm

Top-down View of Image Sensor

Pixel size < 20nm

Switch Mirror

Image Sensor

Concave Mirror Review Optics Objective Mirror M1 = 26 Mask Inspection Mode (26X)

Review mode ( M1×M2 = 1200X )

M2 = b／a >23

 Review optics enables to demagnify the corresponding pixel size of image sensor on wafer and to identify the position of phase defect with higher accuracy.

EUVL Workshop 2012, June 4, 2012

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Patterned Mask Inspector (PMI) with EB Projection Optics • • •

Basic Concept EB Projection Optics High Resolution High Throughput 2X nm gen.

Previous Generation • Program Defect Mask • Sensitivity: < 30nm S. Yamaguchi, et al., Proc. of SPIE Vol. 8166 81662F-1 (2011) EUVL Workshop 2012, June 4, 2012

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Signal-to-Noise Ratio of Defect

31 nm 24 nm

1 Defect size [nm]

Edge Extension

SEM images 24 nm

Edge Intrusion

Defect SNR [-]

hp 88 nm

31 nm

PEM images

The 24 nm-sized edge extension defect was successfully identified EUVL Workshop 2012, June 4, 2012

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Agenda     

Trend of LSI Downscaling Lithography Prospect Technical Challenge for EUVL Role of EIDEC Persistent Efforts for Each Technology Development  Mask  Resist / Process  Source / Scanner  Summary

EUVL Workshop 2012, June 4, 2012

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Metric & Infrastructure for Resist Development Infrastructure

Resist Development

SFET

Source

Resolution

Illuminator

LER

Outgas Test Setup High Power EUV light

Sensitivity

Resist Film

Outgassing Outgas

WS

Contamination Film

All performance improvement are necessary

EUVL Workshop 2012, June 4, 2012

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Small Field Exposure Tool: SFET ■Resolution ＜ 20nmHP ■Sensitivity < 10mJ/cm2 ■LER < 2nm ■Low Outgassing

SFET Exposure chamber Source (Xe DPP)

Items NA Field size: mm Magnification Source power

Spec 0.3 0.2 x 0.6 1/5 0.5W @IF

EUVL Workshop 2012, June 4, 2012

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Ultimate Resolution (Aggressive Dipole Illum.) 16nm L/S was resolved. 17nmL/S

16nmL/S

15nmL/S

Exposure Tool ：Canon SFET NA ：0.3 Illumination：X-dipole Track ：TEL ACT12 Evaluation SEM ：Hitachi CG4000 Resist ：35nm Thickness Proc. of SPIE Vol. 7696 79690Q-6

N. Sugie, et al., presented at The 21st Research Group on Polymers for Microelectronics and Photonics, No.1 (2012). EUVL Workshop 2012, June 4, 2012

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Outgas Evaluation Procedure e

e

Outgas

Resist Film

WS Contamination Film

EB-based Tool

Ellipsometer

XPS

Cleaning

X-ray e

Gas Resist Film

EUV Outgas Contamination Film

WS

WS

Spectroscopic Ellipsometer

WS

WS

H2 Cleaner

XPS

EUV-based Tool

 Outgassing from resist material generates contamination film on WS.  The outgas amount for cleanable (carbon) components is quantified by measuring the thickness of the contamination film.  Non-cleanable components can be characterized by XPS after cleaning the carbon contaminant by H2 radical. EUVL Workshop 2012, June 4, 2012

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Outgas Evaluation Infrastructure in EIDEC

EB-based Tool EUVOM-9000 (LTJ) New SUBARU

Spectroscopic Ellipsometer

EUV-based Tool HERC (Univ. of Hyogo)

H2 Cleaner (EUVT)

M-2000X (J.A.Woollam)

XPS Versa Probe Ⅱ (ULVAC PHI)

 EB-based Outgas Evaluation Tool has been installed in Mar. 2012.  EUV-based Tool also has been installed as a reference of EB-based tool.  The metrology tools, i.e. Spectroscopic Ellipsometer (SE) and XPS, was certificated by exposure tool supplier. EUVL Workshop 2012, June 4, 2012

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Carbon Contamination Platform

2.5

De-protected Group Weak

Methacry late

Methacrylate

2 PHS

1.5

Hybrid-3 Hybrid-3

1 Hybrid-1

0.5

PHS

Polarity

High Power EUV (nm)

3 Carbon Contamination Thickness

0

0

0.5 1 1.5 2 2.5 Electron Beam (nm)

3

Hybrid-1 Strong

 Linear correlation for carbon contamination between EUV and EB was clearly observed.  The carbon contamination was decreasing with increase in degree of polarity of the de-protected groups and polymer platforms. Polarity control is one of the key design parameters to reduce outgassing. EUVL Workshop 2012, June 4, 2012

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Contamination at Unexposed Area after Cleaning Witness Sample (WS)

TOF-SIMS Result High

Unexposed Area Exposed Area

C4F9SO3 Concentration

Residual Element (atomic %)

Low

8.0 6.0

6.0 5.8

EUV

Exposed Area Un-exposed Area 4.6

4.0 1.8 2.0

2.0