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Si7625DN Vishay Siliconix

P-Channel 30 V (D-S) MOSFET FEATURES

PRODUCT SUMMARY VDS (V)

RDS(on) (Ω)

ID (A)

0.007 at VGS = - 10 V

- 35d

0.011 at VGS = - 4.5 V

- 35d

- 30

• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100% Rg Tested • 100% UIS Tested • Compliant to RoHS Directive 2002/95/EC

Qg (Typ.) 39.5 nC

PowerPAK® 1212-8

APPLICATIONS S

3.30 mm

• Notebook Adapter Switch • Notebook Load Switch

3.30 mm

1

S 2

S 3

S

G

G

4 D 8

D 7

D 6

D 5

D

Bottom View

Ordering Information: Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C

Limit - 30 ± 20 - 35d - 17.3a, b - 13.8a, b - 80 - 35d

ID

Continuous Source-Drain Diode Current

TC = 25 °C TA = 25 °C

IS

Avalanche Current Single-Pulse Avalanche Energy

L = 0.1 mH

IAS EAS

Maximum Power Dissipation

TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C

PD

- 3.0a, b - 20 20 52 33 3.7a, b 2.4a, b - 55 to 150 260

TJ, Tstg

Operating Junction and Storage Temperature Range

V

35d

IDM

Pulsed Drain Current

Unit

Soldering Recommendations (Peak Temperature)e, f

A

mJ

W

°C

THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case

t ≤ 10 s Steady State

Symbol RthJA RthJC

Typical 26 1.9

Maximum 33 2.4

Unit °C/W

Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 81 °C/W. d. Package limited. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65737 S10-0638-Rev. A, 22-Mar-10

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Si7625DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter

Symbol

Test Conditions

Min.

VDS

VGS = 0 V, ID = - 250 µA

- 30

Typ.

Max.

Unit

Static Drain-Source Breakdown Voltage VDS Temperature Coefficient

ΔVDS/TJ

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = - 250 µA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-State Resistancea Forward Transconductancea

RDS(on) gfs

Dynamicb Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time

tr

mV/°C

5.0 - 1.0

- 2.5

V

± 100

nA

VDS = - 30 V, VGS = 0 V

-1

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

-5

VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 15 A

- 30 0.007

VGS = - 4.5 V, ID = - 10 A

0.0088

0.011

VDS = - 10 V, ID = - 15 A

47 4427

VDS = - 15 V, VGS = 0 V, f = 1 MHz

452

pF

430 VDS = - 15 V, VGS = - 10 V, ID = - 10 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A

84.5

126

39.5

60

11

nC

13.5 f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω

0.4

1.8

3.6

15

30

13

26

55

100

tf

10

20

55

100

tr

Ω S

td(on) td(off)

µA A

0.0056

td(on) td(off)

V - 23

VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω

tf

42

80

52

100

17

34

Ω

ns

Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current

IS

Pulse Diode Forward Current

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

ta

Reverse Recovery Rise Time

tb

TC = 25 °C

- 35 - 80

IS = - 3 A, VGS = 0 V

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

A

- 0.74

- 1.2

V

14

24

ns

4

8

nC

8 6

ns

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65737 S10-0638-Rev. A, 22-Mar-10

New Product

Si7625DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10

80 V GS = 10 V thru 4 V

8 I D - Drain Current (A)

ID - Drain Current (A)

64

48

32 V GS = 3 V

6 T C = 125 °C 4 T C = 25 °C 2

16

T C = - 55 °C 0 0.0

0 0.5

1.0

1.5

2.0

0

2.5

1

3

4

5

V GS - Gate-to-Source Voltage (V)

V DS - Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics 6000

0.012

4800

0.010 V GS =4.5V

C - Capacitance (pF)

RDS(on) - On-Resistance (Ω)

2

0.008

0.006 V GS =10V

Ciss 3600

2400

0.004

1200

0.002

0

Coss Crss

0

16

32

48

64

80

0

6

ID - Drain Current (A)

12

24

30

V DS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance 1.6

10

ID = 15 A

V DS = 15 V

ID = 10 A

V GS = 10 V 1.4

8 RDS(on) - On-Resistance (Normalized)

VGS - Gate-to-Source Voltage (V)

18

V DS = 10 V 6

4 V DS = 20 V

V GS = 4.5 V

1.2

1.0

0.8

2

0 0

18

36

54

Qg - Total Gate Charge (nC)

Gate Charge Document Number: 65737 S10-0638-Rev. A, 22-Mar-10

72

90

0.6 - 50

- 25

0

25

50

75

100

125

150

T J - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Si7625DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030

100

ID = 15 A R DS(on) - On-Resistance (Ω)

T J = 150 °C I S - Source Current (A)

10 T J = 25 °C

1

0.1

0.018 T J = 125 °C 0.012 T J = 25 °C 0.006

0.01

0.001 0.0

0.024

0.000 0.2

0.4

0.6

0.8

1.0

1.2

0

2

V SD - Source-to-Drain Voltage (V)

4

6

8

10

V GS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.8

100 ID = 250 μA 80

Power (W)

V GS(th) Variance (V)

0.5

0.2 ID = 5 mA

60

40

- 0.1 20

- 0.4 - 50

0 - 25

0

25

50

75

100

125

150

0.001

0.01

0.1

1

T J - Temperature (°C)

Pulse (s)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

10

100 Limited by RDS(on)*

ID - Drain Current (A)

10 1 ms 10 ms 1 100 ms 1s 10 s

0.1 TA = 25 °C Single Pulse 0.01 0.01

DC BVDSS Limited

0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified

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Document Number: 65737 S10-0638-Rev. A, 22-Mar-10

New Product

Si7625DN Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70

ID - Drain Current (A)

56

42 Package Limited 28

14

0 0

25

50

75

100

125

150

T C - Case Temperature (°C)

65

2.0

52

1.6

39

1.2

Power (W)

Power (W)

Current Derating*

26

13

0.8

0.4

0

0.0 0

25

50

75

100

TC - Case Temperature (°C)

Power, Junction-to-Case

125

150

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 65737 S10-0638-Rev. A, 22-Mar-10

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Si7625DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1

Notes:

0.1 PDM

0.05 t1 t2 1. Duty Cycle, D =

0.02

t1 t2

2. Per Unit Base = R thJA = 81 °C/W 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted

Single Pulse

0.01 10 -4

10 -3

10 -2

10 -1 1 Square Wave Pulse Duration (s)

10

100

1000

Normalized Thermal Transient Impedance, Junction-to-Ambient 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1

0.05 0.02 Single Pulse

0.01 10 -4

10 -3

10 -2

10 -1

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65737.

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Document Number: 65737 S10-0638-Rev. A, 22-Mar-10

Legal Disclaimer Notice Vishay

Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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