®
OPT211
MONOLITHIC PHOTODIODE AND AMPLIFIER FEATURES
DESCRIPTION
● WIDE BANDWIDTH, HIGH RESPONSIVITY:
The OPT211 is a monolithic photodiode with on-chip FET-input transpedance amplifier, that provides wide bandwidth at very high gains. Uncommitted input and feedback nodes allow a variety of feedback options for maximum versatility. Trade-offs in responsivity (gain), bandwidth and SNR can easily be made.
BANDWIDTH 50kHz *150kHz 5kHz *13kHz *with bootstrap buffer
● PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm) ● HIGH RESPONSIVITY: 0.45A/W (650nm)
The monolithic combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs such as leakage current errors, noise pickup and gain peaking due to stray capacitance. The 0.09 x 0.09 inch photodiode is operated at zero bias for excellent linearity and low dark current. Direct access to the detector’s anode allows photodiode bootstrapping, which increases speed performance.
● LOW DARK ERRORS: 2mV max ● EXCELLENT SPECTRAL RESPONSE ● LOW QUIESCENT CURRENT: 400µA ● TRANSPARENT 8-PIN DIP
APPLICATIONS
The OPT211 operates over a wide supply range (±2.25V to ±18V) and supply current is only 400µA. It is packaged in a transparent plastic 8-pin DIP specified for the 0°C to 70°C temperature range.
● MEDICAL INSTRUMENTATION ● LABORATORY INSTRUMENTATION ● POSITION AND PROXIMITY SENSORS ● PHOTOGRAPHIC ANALYZERS ● BARCODE SCANNERS
RF 2 OPT211
5
λ
VOUT
0.5
Red
Photodiode Responsivity (A/W)
Ultraviolet
Blue
● SMOKE DETECTORS
SPECTRAL RESPONSIVITY Green Yellow
RF 1MΩ 100MΩ
Infrared
Using External 1MΩ Resistor
0.4 0.3 0.2 0.1 0
7
8
1
100
3
200 300 400 500
600
700 800 900 1000 1100
Wavelength (nm) V+
V–
International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©
1994 Burr-Brown Corporation
PDS-1258A
Printed in U.S.A. January, 1995
SPECIFICATIONS TA = +25°C, VS = ±15V, λ = 650nm, external 1MΩ feedback resistor, circuit shown in Figure 1, unless otherwise noted. OPT211P PARAMETER
CONDITIONS
RESPONSIVITY Photodiode Current Unit-to-Unit Variation Voltage Output Nonlinearity Photodiode Area
MIN
650nm 650nm λ = 650nm, RF = 1MΩ
DARK ERRORS, RTO(1) Offset Voltage, Output vs Temperature vs Power Supply Voltage Noise, Dark FREQUENCY RESPONSE Bandwidth Rise Time, 10% to 90%, RF = 1MΩ Settling Time, FS to Dark 1% 0.1% 0.01% 100% Overload Recovery Time
OUTPUT Voltage Output
(0.090 x 0.090 inches) (2.29 x 2.29mm)
0.45 ±5 0.45 0.01 0.008 5.2
VS = ±2.25V to ±18V Dark, fB = 0.1Hz to 100kHz
±0.5 ±10 10 1
Anode Grounded(2) Anode Bootstrapped(3) Anode Grounded(2) Anode Bootstrapped(3) Anode Grounded(2)
A/W % V/µW % of FS in2 mm2 ±2 100
mV µV/°C µV/V mVrms
10 25 30 44 100 240
µs µs µs µs µs µs
(V+) – 1.25 (V+) – 2
(V+) – 1 (V+) – 1.5 250 ±18
V V pF mA
±2.25
±15 ±400
VOUT = 0V
TEMPERATURE RANGE Specification Operating Storage Thermal Resistance, θJA
UNITS
kHz kHz µs µs
Operation(4)
POWER SUPPLY Operating Voltage Range Quiescent Current
MAX
50 150 5 2
FS to Dark (to 1%) VS = ±5V VS = ±2.25V RL = 10kΩ RL = 5kΩ
Capacitive Load, Stable Short-Circuit Current
TYP
0 0 –25
±18 ±500
V µA
+70 +70 +85
°C °C °C °C/W
MAX
UNITS
100
NOTES: (1) Referred to Output. Includes all error sources. (2) See Figure 1. (3) See Figure 3. (4) See Figure 2.
PHOTODIODE SPECIFICATIONS TA = +25°C, λ = 650nm, unless otherwise noted. Photodiode of OPT211 PARAMETER
CONDITIONS
Photodiode Area Current Responsivity Dark Current vs Temperature Capacitance
MIN
(0.090 x 0.090 inches) (2.29 x 2.29mm) λ = 650nm VD = 0V VD = 0V
TYP 0.008 5.2 0.45 865 500 doubles every 10°C 600
in2 mm2 A/W µA/W/cm2 fA pF
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
®
OPT211
2
OP AMP SPECIFICATIONS TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted. OPT211 Op Amp(1) PARAMETER INPUT Offset Voltage vs Temperature vs Power Supply Input Bias Current vs Temperature Input Impedance Differential Common-Mode Common-Mode Input Voltage Range Common-Mode Rejection
CONDITIONS
MIN
TYP
MAX
UNITS
±0.5 ±5 10 ±1 doubles every 10°C
mV µV/°C µV/V pA
1012 || 3 1012 || 3 ±14.4 106
Ω || pF Ω || pF V dB
30 25 15 0.8
nV/√Hz nV/√Hz nV/√Hz fA/√Hz
OPEN-LOOP GAIN Open-Loop Voltage Gain
120
dB
FREQUENCY RESPONSE Gain-Bandwidth Product(2) Slew Rate Settling Time 0.1% 0.01%
16 6 4 5
MHz V/µs µs µs
(V+) – 1.25 (V+) – 2
(V+) – 1 (V+) – 1.5 ±18
V V mA
±2.25
±15 ±400
NOISE Voltage Noise Density
Current Noise Density
OUTPUT Voltage Output
VS = ±2.25V to ±18V
Linear Operation
f = 10Hz f = 100Hz f = 1kHz f = 1kHz
RL = 10kΩ RL = 5kΩ
Short-Circuit Current POWER SUPPLY Operating Voltage Range Quiescent Current
IO = 0mA
±18 ±500
V µA
NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable in gains ≥ 20V/V.
®
3
OPT211
DICE INFORMATION
4
1
PAD
FUNCTION
8B
1 2 3 4 5 6 7 8A, 8B
V+ –In V– NC VOUT NC PD Anode Common
2
3
Photodiode Area 0.090 x 0.090 inch 2.29 x 2.29 mm
5
NC: No Connection.
MECHANICAL INFORMATION 8A
Die Size Die Thickness Min. Pad Size 7
6
Backing
MILS (0.001")
MILLIMETERS
154 x 120 18 4x4
3.91 x 3.05 0.46 0.1 x 0.1 None
OPT211 DIE TOPOGRAPHY
PIN CONFIGURATIONS Top View
ELECTROSTATIC DISCHARGE SENSITIVITY
DIP
V+
1
–In
2
8
Common
7
PD Anode
This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
(1)
V–
3
6
NC
NC
4
5
VOUT
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
NOTE: (1) Photodiode location.
ABSOLUTE MAXIMUM RATINGS Supply Voltage ................................................................................... ±18V Input Voltage Range ............................................................................ ±VS Output Short-Circuit (to ground) ............................................... Continuous Operating Temperature ..................................................... –25°C to +85°C Storage Temperature ........................................................ –25°C to +85°C Junction Temperature ...................................................................... +85°C Lead Temperature (soldering, 10s) ................................................ +300°C (Vapor-Phase Soldering Not Recommended)
MOISTURE SENSITIVITY AND SOLDERING Clear plastic does not contain the structural-enhancing fillers used in black plastic molding compound. As a result, clear plastic is more sensitive to environmental stress than black plastic. This can cause difficulties if devices have been stored in high humidity prior to soldering. The rapid heating during soldering can stress wire bonds and cause failures. Prior to soldering, it is recommended that plastic devices be baked-out at +85°C for 24 hours.
PACKAGE INFORMATION MODEL OPT211P
PACKAGE
PACKAGE DRAWING NUMBER(1)
8-Pin DIP
006-1
The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT211 plastic packages cannot meet flammability test, UL-94.
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix D of Burr-Brown IC Data Book.
®
OPT211
4
TYPICAL PERFORMANCE CURVES TA = +25°C, VS = ±15V, λ = 650nm, external 1MΩ feedback resistor, circuit shown in Figure 1, unless otherwise noted.
NORMALIZED SPECTRAL RESPONSIVITY
RESPONSE vs INCIDENT ANGLE 1.0
1.0 θX
(0.48A/W)
0.8
0.8
650nm (0.45A/W)
Relative Response
Normalized Current or Voltage Output
1.0
0.6
0.4
0.6
0.6 θX
0.4
0.2
0.4
0.2
0 ±80
0 100
200 300 400 500
600
700 800 900 1000 1100
±20
0
±40
Wavelength (nm)
±60
Incident Angle (°)
TRANSIMPEDANCE vs FREQUENCY
VOLTAGE RESPONSIVITY vs RADIANT POWER
100M
10
10M
Output Voltage (V)
Dotted Line: Bandwidth with Bootstrap Buffer— See Text.
RF = 100MΩ
Transimpedance (V/A)
θY
Plastic DIP Package
0.2
0
RF = 10MΩ, CF = 1pF
1M
RF = 1MΩ, CF = 3pF
Ω 0M
1
RF
=
0.1
10
Ω
M
RF
=
10
RF
=
Ω 1M λ = 650nm
0.01
0.001
100k 1k
10k
100k
1M
10-3
10-2
Frequency (Hz)
10-1
102
QUIESCENT CURRENT vs TEMPERATURE
VOLTAGE RESPONSIVITY vs IRRADIANCE
0.6 0.5
Quiescent Current (mA)
Ω
1
M 00
RF
=
1
Ω
0.1 RF
=
M 10
Ω
RF
0.01
=
1M
λ = 650nm
VS = ±15V
0.4 0.3 VS = ±2.25V 0.2 0.1
0.001 10-4
101
10
Radiant Power (µW)
10
Output Voltage (V)
0.8
θY
0 10-3
10-2
10-1
10
101
–75
Irradiance (W/m2)
–50
–25
0
25
50
75
100
125
Temperature (°C)
®
5
OPT211
TYPICAL PERFORMANCE CURVES
(CONT)
TA = +25°C, VS = ±15V, λ = 650nm, external 1MΩ feedback resistor, circuit shown in Figure 1, unless otherwise noted.
NOISE EFFECTIVE POWER vs MEASUREMENT BANDWIDTH
OUTPUT NOISE VOLTAGE vs MEASUREMENT BANDWIDTH 10–2
10–8 Total Noise 0.1 Hz to Indicated BW
1MΩ
Noise Effective Power (W)
Noise Voltage (Vrms)
10–3
10–4 RF = 100MΩ 10–5
10–6 RF = 1MΩ RF = 10MΩ
10–7 1
10
100
1k
OPT211 Anode Grounded OPT211 with Anode Bootstrap Drive 10k
100k
λ = 650nm
10–9
10MΩ
Total Noise 0.1 Hz to Indicated BW
10–10
100MΩ
10–11
10–12 OPT211 Anode Grounded OPT211 with Anode Bootstrap Drive
10–13
1M
Frequency (Hz)
10–14 1
10
100
1k
10k
Frequency (Hz)
STEP RESPONSE RF = 1MΩ, Bootstrap Buffer
STEP RESPONSE RF = 1MΩ, Anode Grounded
®
OPT211
6
100k
1M
APPLICATIONS INFORMATION Figure 1 shows the basic connections required to operate the OPT211. Applications with high impedance power supplies may require decoupling capacitors located close to the device pins as shown in Figure 1.
stray capacitance to a few tenths of a picofarad. With experimentation, circuit board traces can be used to produce the necessary stray capacitance for proper compensation and widest possible bandwidth. The circuit in Figure 1 can drive capacitive loads up to 250pF. To drive load capacitance up to 1nF, connect R1 and the feedback components as shown in Figure 2.
CF
RF ≥ 330kΩ
DARK ERRORS Dark error specifications include all error sources and are tested with the circuit shown in Figure 1 using RF=1MΩ. The dominate dark error source is the input offset voltage of the internal op amp. The combination of photodiode dark current and op amp input bias current is approximately 1.5pA at 25°C. Even with very large feedback resistors, this contributes virtually no offset error. Dark current and input bias current increase with temperature, doubling (approximately) for each 10°C increase. At 70°C, dark current is approximately 35pA. This would produce 3.5mV offset with a 100MΩ feedback resistor.
2 OPT211
ID
5
λ 7
8
1
VOUT
3
0.1µF
0.1µF V+ V– +15V –15V
RF (Ω)
CF (pF)
Bandwidth (kHz)
330k 1M 10M 100M
5.6 3 1(1) 0.3(1)
86 50 16 5
Circuit board leakage currents can increase dark error. Use clean assembly procedures to avoid contamination, particularly around the sensitive inverting input node (pin 2). Errors due to leakage current from the V+ supply (pin 1) can be eliminated by encircling the trace connecting to pin 2 with a guard trace connected to ground.
NOTE: (1) Feedback resistor has approximately 1pF stray capacitance. CF
