Data Sheet No.PD60156-K

IPS511G/IPS512G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • •

Product Summary

Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground

Rds(on)

150mΩ (max)

V clamp

50V

I Limit

5A

V open load

3V

Description The IPS511G/IPS512G are fully protected five terminal high side switches with built in short-circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, overtemperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground.

Truth Table

Typical Connection

Available Package

Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature

In Out H H L L H H L H H L (limiting) L L H L (cycling) L L

Dg H L H H L L L L

+ VCC + 5v 15K Status feedback

Output pull-up resistor

Vcc Dg

Logic

Rdg Rin

Logic signal

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control Out

In

Gnd

Load Logic Gnd

Load Gnd

8 Lead SOIC (Single) IPS511G

16 Lead SOIC (Dual) IPS512G

1

IPS511G/IPS512G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).

Symbol Parameter

Min.

Max.

Vcc-50

Vcc+0.3

Maximum logic ground to load ground offset Vcc-50

Vcc+0.3

Units

Vout Voffset

Maximum output voltage

Vin Iin, max

Maximum Input voltage

-5

10

Vdg Idg, max

Maximum diagnostic output voltage

-0.3

5.5

V

Maximum diagnostic output current

-1

10

mA

Isd cont.

Diode max. continuous current (1)

-0.3

Maximum IN current

(IPS511G)

—

1.4

—

0.8

Isd pulsed Diode max. pulsed current (1)

—

10

ESD1

—

4000

ESD2

Electrostatic discharge voltage (Machine Model)

—

500

Pd

Maximum power dissipation (rth=125oC/W) IPS511G

—

1

—

1.5

(rth=85oC/W,

both legs on) IPS512G

V

5.5

(per leg/both legs ON - IPS512G) Electrostatic discharge voltage (Human Body)

Test Conditions

mA

A

C=100pF, R=1500Ω, V

C=200pF, R=0Ω, L=10µH

W o

Tj max.

Max. storage & operating junction temp.

-40

+150

Vvv max

Maximum Vcc voltage

—

50

Min.

Typ.

— —

 &

a a

—

85

—

—

100

—

—

#

—

C V

Thermal Characteristics Symbol Parameter Rth1 Rth2 Rth1

Thermal resistance with standard footprint Thermal resistance with 1" square footprint Thermal resistance with standard footprint (2 mos on) (2 mosfets on) Rth2 (1) Thermal resistance with standard footprint (1 mos on) (1 mosfet on) Rth2 Thermal resistance with 1" square footprint (2 mos on) (2 mosfets on)

Max. Units Test Conditions 8 Lead SOIC

o

C/W 16 Lead SOIC

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

2

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IPS511G/IPS512G Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter

Min.

Max.

Vcc VIH VIL Iout

5.5 4 -0.3

35 5.5 0.9

—

1.4

— 4 10

1.0 6 20

Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current Tamb=85 oC (TAmbient = 85oC, Tj = 125oC, rth = 100oC/W) IPS511G Iout Continuous output current per leg Tamb=85 oC (TAmbient = 85oC, Tj = 125oC Rth = 85oC/W both legs on) IPS512G Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin

Units V

A

kΩ

Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.)

Symbol Parameter

Min.

Typ.

ON state resistance Tj = 25oC

—

130

150

ON state resistance @ Vcc = 6V

—

130

150

ON state resistance Tj = 150oC

—

220

—

Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Iol Iol Idg

Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current

5.5 50 — — — — — — — 0

— 56 58 0.9 16 0.7

35 — 65 1.2 50 2 — 0.4 120 25

leakage

Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis

—

—

— 1 — 0.1

2.3 2 70 0.25

Rds(on)

Max. Units Test Conditions Vin = 5V, Iout = 2.5A

@Tj=25o C

Rds(on) (V cc=6V)

Rds(on)

mΩ

Vin = 5V, Iout = 1A Vin = 5V, Iout = 2.5A

@Tj=150oC

Vih Vil Iin, on In, hyst.

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20 0.15 60 —

10 2.5 — 200 0.5

V µA mA µA V µA

Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V

V µA V

Vin = 5V

3

IPS511G/IPS512G Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5.6Ω, Tj = 25oC, (unless otherwise specified).

Symbol Parameter

Min.

Tdon Tr1 Tr2

Turn-on delay time Rise time to Vout = Vcc - 5V Rise time from the end of TR1 to Vout = 90% of Vcc dV/dt (on) Turn ON dV/dt E on Turn ON energy Tdoff Turn-off delay time Tf Fall time to Vout = 10% of Vcc dV/dt (off) Turn OFF dV/dt Eoff Turn OFF energy Tdiag Vout to Vdiag propagation delay

Typ. Max. Units Test Conditions

— —

7 10

— — — — — — — —

45 1.3 400 15 10 2 80 5

Min.

Typ.

3 — — 2 2

5 165 158 3 3

50 50 95 4 — 50 50 6 — 15

µs V/µs µJ µs

See figure 3

See figure 4

V/µs µJ µs

Protection Characteristics Symbol Parameter Ilim Internal current limit Tsd+ Over-temp. positive going threshold TsdOver-temp. negative going threshold Vsc Short-circuit detection voltage (3) Vopen load Open load detection threshold

Max. Units Test Conditions 7 — — 4 4

A oC oC

V V

Vout = 0V See fig. 2 See fig. 2 See fig. 2

(3) Referenced to Vcc

Lead Assignments Vcc Vcc Vcc Vcc In1 Gnd1 Vcc Vcc Vcc Vcc Out2 Dg2

1

GND IN

1

DG OUT

Dg1 Out1 Vcc Vcc Vcc Vcc Gnd2 In2

8 Lead SOIC

16 Lead SOIC

IPS512G

IPS511G Part Number

4

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IPS511G/IPS512G Functional Block Diagram All values are typical

VCC

Under voltage lock out 50V

Over temperature

165°C 158°C

Tj

Charge pump

62 V

2.7 V

IN

Level shift

2.2 V 7 V

200 KΩ

driver

-

DG

Current limit

+

5A

7 V 40Ω

3V

+ -

+ Open load

Short-circuit

GND

T clamp

-

3V

VOUT

Vin

5V 0V

Vin

Iout

limiting

T shutdown

cycling

Ilim.

Iout ( + Vcc )

T

0V

Out

V clamp

Tsd+ Tsd(160 ° )

( see Appl . Notes to evaluate power dissipation )

Figure 1 - Active clamp waveforms

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Figure 2 - Protection timing diagram

5

IPS511G/IPS512G

Vin Vcc 90%

Vin

Vcc - 5V

Vout

90%

dV/dt on

10%

dV/dt off

Td on

Vout

Tr 1

Tr 2 E1(t)

10%

Iout1 Eon1

Td off

Iout2

Resistive load

Tf E2 (t)

Inductive load Eon2

Figure 4 - Switching times definition (turn-off)

Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load

V in Dg Vcc IN

Vcc Vcc -Vsc

Out +

Gnd

L

Vin

14 V

V o ut

Vout

Vol

R V d ia g

5v 0v

Iout Diag off blanking

Diag on blanking

Rem :

V load is negative during demagnetization

Figure 5 - Active clamp test circuit

6

T diag

Figure 6 - Diagnostic delay definitions

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IPS511G/IPS512G

150

2 00 %

100

1 50 %

50

1 00 %

0 0

5

10

15

20

25

30

5 0%

35

-5 0

0

50

100

150

Figure 8 - Normalized Rds(on) Vs Tj (oC)

Figure 7 - Rds(on) (mΩ) Vs Vcc (V)

10

150

100 1

50

0.1 0

0

1

2

3

4

Figure 9 - Rds(on) (mΩ) Vs Iout (A)

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5 Figure 10 - Max. Iout (A) Vs Load Inductance (uH)

7

IPS511G/IPS512G

5

5

4

4 1inch² footprint Rthja= 60°C/W

3

3 Standard footprint one leg on

2

2 Standard footprint Rth=100°C/W

1

1

0

Standard footprint both legs on

0 25

50

75

100

125

150

25

Figure 11a - Max load current (A) Vs Tamb (oC) IPS511G

50

75

100

125

150

Figure 11b - Max load current (A) Vs Tamb (oC) IPS512G

6

10 0

5 10

4 3

1

2 0,1

1

Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (S) - IPS511G/IPS512G

8

1E+03

1E+02

1E+01

1E+00

1E-01

1E-02

1E-03

1E-04

1E-05

0,01

0 -50

0

50

100

150

Figure 13 - Ilim (A) Vs Tj (oC)

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IPS511G/IPS512G

Resistive load

600

10000

1000

I=Imax vs Induct.(see fig.10)

Eon 400

Eoff 100

I=1.5A

10

200

1

Figure 14 - Eon, Eoff (µJ) vs I (A)

1E+06

1E+05

0.1

3

1E+04

2

1E+03

1

1E+02

0

1E+01

0

Figure 15 - Eon (µJ) Vs Load Inductance (µH) (see Fig. 3)

1.00E-03

150 125 Diag on blanking 100

1.00E-04

75 50

1.00E-05

25 Diag off blanking 0

1.00E-06

0

1

2

Figure 16 - Diag Blanking time (µS) Vs Iout (A) (resistive load - see Fig. 6)

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3

0

5

10

15

20

25

30

35

Figure 17 - Icc (mA) Vs Vcc (V)

9

IPS511G/IPS512G

Case Outline - IPS511G

8 Lead SOIC

10

(MS-012AA) 01-0021 09

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IPS511G/IPS512G

Case Outline

16 Lead SOIC (narrow body)

01-3064 00

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 5/9/2000

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