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1
DDR3 1600/1333/1066/800MHz DRAM Component Validation
Intel Platform Memory Operations
DDR3 1600/1333/1066/800MHz DRAM Component Validation Results This information is provided as a guide to component compliance. This testing is not intended to replace the normal OEM component qualification process. Intel encourages memory suppliers to validate their fastest speed/latency component. The slower speed/latency components using the same die revision as the listed fast component may not be explicitly listed in this table. This does not preclude the slower components from being submitted in memory modules for testing if the component has passed testing and has been listed in this table at the fastest speed/latency. Please contact the supplier directly to obtain information regarding the corresponding slower speed/latency parts. Validated DDR3 1600/1333/1066/800MHz DRAM Components Density
Width
Freq
Latency CL-tRCD-tRP
Notes
Component Date Code
EDJ1108BFBG-GN-F
1Gb
8
1600
11-11-11
-
1016
Elpida
EDJ1104BDSE-DJ-F
1Gb
4
1333
9-9-9
-
933
Elpida
EDJ1108BFBG-DJ-F
1Gb
8
1333
9-9-9
-
1010
Elpida
EDJ1108BDSE-DJ-F
1Gb
8
1333
9-9-9
-
913
Elpida
EDJ1116BBSE-DJ-F, ∇
1Gb
16
1333
9-9-9
-
846
EDJ1108BBSE-DJ-F
1Gb
8
1333
9-9-9
-
846
EDJ1104BASE-AE-E
1Gb
4
1066
7-7-7
-
831
Elpida
EDJ1104BASE-DJ-E
1Gb
4
1333
9-9-9
-
831
Elpida
EDJ1108BASE-DJ-E
1Gb
8
1333
9-9-9
-
729
Elpida
EDJ1108BASE-AE-E
1Gb
8
1066
7-7-7
-
729
Elpida
EDJ2204B1MB-AE-E
1Gb (DDP)
4
1066
7-7-7
-
831
Hynix
H5TQ1G83DFR-H9C
1Gb
8
1333
9-9-9
Hynix
H5TQ1G83DFR-PBC, ◊
1Gb
8
1600
11-11-1
-
1020
Hynix
H5TQ1G83TFR-PBC, ◊
1Gb
8
1600
11-11-1
-
946
Hynix
H5TQ2G63BFR-PBC
1Gb
16
1600
11-11-1
-
1008
Hynix
H5TQ2G83BFR-PBC
2Gb
8
1600
11-11-1
-
948
Hynix
H5TQ2G63BFR-H9C
2Gb
16
1333
9-9-9
-
940
Hynix
H5TQ2G43BFR-H8C
2Gb
4
1333
8-8-8
-
940
Hynix
H5TQ2G43BFR-H9C
2Gb
4
1333
9-9-9
-
940
Supplier
Part Number
Elpida
Elpida Elpida
2
DDR3 1600/1333/1066/800MHz DRAM Component Validation
1016
Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density
Width
Freq
Latency CL-tRCD-tRP
Notes
Component Date Code
H5TQ1G43TFR-H8C, ◊
1Gb
4
1333
8-8-8
-
933
Hynix
H5TQ1G43TFR-H9C, ◊
1Gb
4
1333
9-9-9
-
933
Hynix
H5TQ1G83TFR-H8C, ◊
1Gb
8
1333
8-8-8
-
933
Hynix
H5TQ1G83TFR-H9C, ◊
1Gb
8
1333
9-9-9
-
933
Hynix
H5TQ2G83BFR-H9C
2Gb
8
1333
9-9-9
-
936
Hynix
H5TQ2G83BFR-H8C
2Gb
8
1333
8-8-8
-
936
Hynix
H5TQ2G43AFR-H9C, ◊
2Gb
4
1333
9-9-9
-
904
Hynix
H5TQ2G43AFR-G7C, ◊
2Gb
4
1066
7-7-7
-
905
Hynix
H5TQ2G83AFR-G7C, ∇,◊
2Gb
8
1066
7-7-7
-
905
H5TQ1G43BFR-H8C, ◊
1Gb
4
1333
8-8-8
-
842
H5TQ1G43BFR-H9C, ∇,◊
1Gb
4
1333
9-9-9
-
842
H5TQ2G83AFR-H9C, ∇,◊
2Gb
8
1333
9-9-9
-
905
1Gb
16
1333
9-9-9
-
849
2Gb (DDP)
8
1066
7-7-7
-
836
Supplier
Part Number
Hynix
Hynix Hynix Hynix Hynix
H5TQ1G63BFR-H9C, ∇,◊
Hynix
H5TQ4G83MMR-G7C, ‡, ª, ¤
Hynix
H5TQ1G43AFP-G7C
1Gb
4
1066
7-7-7
-
827
H5TQ1G43AFP-H9C, ∇
1Gb
4
1333
9-9-9
-
827
2Gb
8
1333
9-9-9
-
827
1Gb (DDP)
4
1066
7-7-7
-
827
H5TQ1G43BFR-G7C, ∇,◊
1Gb
4
1066
7-7-7
-
835
1Gb
8
1066
7-7-7
-
844
1Gb
4
1066
7-7-7
-
835
H5TQ1G83BFR-H8C, ∇,◊
1Gb
8
1333
8-8-8
-
849
H5TQ1G83BFR-H9C, ∇,◊
1Gb
8
1333
9-9-9
-
849
1Gb
16
1066
7-7-7
-
832
H5TQ2G83MFR-G7C, ∇
2Gb
8
1066
7-7-7
-
823
H5TQ1G63AFP-G7C, ∇
1Gb
16
1066
7-7-7
-
813
Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix Hynix
3
H5TQ2G83MFR-H9C, ∇
H5TQ2G43AMP-G7C, ∇
H5TQ1G83BFR-G7C, ∇,◊ H5TQ1G43BFR-G8C, ∇,◊ H5TQ1G63BFR-G7C, ∇,◊
DDR3 1600/1333/1066/800MHz DRAM Component Validation
Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density
Width
Freq
Latency CL-tRCD-tRP
Notes
Component Date Code
1Gb
16
1066
8-8-8
-
813
H5TQ1G83AFP-G7C, ∇
1Gb
8
1066
7-7-7
-
813
H5TQ1G83AFP-G8C, ∇
1Gb
8
1066
8-8-8
-
813
1Gb
8
1333
8-8-8
-
827
H5TQ1G83AFP-H9C, ∇
1Gb
8
1333
9-9-9
-
827
MT41J128M8JP-15E:G
1Gb
8
1333
9-9-9
-
1044
MT41J1G4THD-15E:D
2Gb (DDP)
4
1333
9-9-9
-
1042
Micron
MT41J256M8HX-15E
2Gb
8
1333
9-9-9
-
1023
Micron
MT41J128M16HA-15E
2Gb
16
1333
9-9-9
-
1023
Micron
MT41J512M4HX-15E
2Gb
4
1333
9-9-9
-
1023
Micron
MT41J256M4JP-15E, ∇
1Gb
4
1333
9-9-9
-
906
MT41J128M8JP-187E, ∇
1Gb
8
1066
7-7-7
-
844
MT41J128M8JP-15E, ∇
1Gb
8
1333
9-9-9
-
906
1Gb
4
1066
7-7-7
-
838
MT41J256M4HX-15E, ∇
1Gb
4
1333
9-9-9
-
838
MT41J512M4THR-187E
1Gb (DDP)
4
1066
7-7-7
-
838
MT41J128M8HX-187E, ∇
1Gb
8
1066
7-7-7
-
806
NT5CB128M8CN-CG
1Gb
8
1333
9-9-9
-
914
NT5CB128M8CN-CF
1Gb
8
1333
8-8-8
-
914
Nanya
NT5CB256M4AN-CG
1Gb
4
1333
9-9-9
-
812
Nanya
NT5CB256M4AN-BE
1Gb
4
1066
7-7-7
-
812
Nanya
NT5CB128M8CN-BE
1Gb
8
1066
7-7-7
-
812
Nanya
NT5CB64M16AP-BE, ∇
1Gb
16
1066
7-7-7
-
750
Supplier
Part Number
Hynix
H5TQ1G63AFP-G8C, ∇
Hynix Hynix Hynix Hynix Micron Micron
Micron Micron Micron Micron Micron Micron Nanya Nanya
H5TQ1G83AFP-H8C, ∇
MT41J256M4HX-187E, ∇
Nanya
NT5CB128M8AN-CG
1Gb
8
1333
9-9-9
-
803
Nanya
NT5CB128M8AN-CF
1Gb
8
1333
8-8-8
-
803
Nanya
NT5CB128M8AN-BE
1Gb
8
1066
7-7-7
-
812
4
DDR3 1600/1333/1066/800MHz DRAM Component Validation
Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density
Width
Freq
Latency CL-tRCD-tRP
Notes
Component Date Code
K4B2G0846D-HCH9
2Gb
8
1333
9-9-9
-
1031
Samsung
K4B1G0846F-HCK0, ◊
1Gb
8
1600
11-11-11
-
1004
Samsung
K4B2G0846C-HCK0, ◊
2Gb
8
1600
11-11-11
-
1007
Samsung
K4B1G0446F-HCH9, ◊
1Gb
4
1333
9-9-9
-
1001
Samsung
K4B1G0846F-HCH9, ◊
1Gb
8
1333
9-9-9
-
940
Samsung
K4B2G0446C-HCH9, ◊
2Gb
4
1333
9-9-9
-
940
Samsung
K4B4G0446A-HCH9, ◊
4Gb
4
1333
9-9-9
-
1010
Samsung
K4B4G0846A-HCH9, ◊
4Gb
8
1333
9-9-9
-
1010
Samsung
K4B8G0446A-MCF8, ◊
4Gb (DDP)
4
1066
7-7-7
-
1013
Samsung
K4B2G0846C-HCH9, ∇,◊
2Gb
8
1333
9-9-9
-
940
K4B2G0446B-HCF8, ◊
2Gb
4
1066
7-7-7
-
846
K4B2G0446B-HCH9, ∇,◊
2Gb
8
1333
9-9-9
-
846
K4B1G0846E-HCF8, ◊
1Gb
8
1066
7-7-7
-
843
1Gb
16
1066
7-7-7
-
913
Samsung
K4B1G0446E-HCF8, ◊
1Gb
4
1066
7-7-7
-
846
Samsung
K4B1G1646E-HCF8, ∇,◊ K4B1G0846E-HCH9, ◊
1Gb
8
1333
9-9-9
-
843
K4B2G0846B-HCH9, ∇,◊
2Gb
8
1333
9-9-9
-
837
1Gb
16
1333
9-9-9
-
913
Supplier
Part Number
Samsung
Samsung Samsung Samsung Samsung
Samsung Samsung
K4B1G1646E-HCH9, ∇,◊
Samsung
K4B1G0446D-HCF7, ◊
1Gb
4
800
6-6-6
-
829
Samsung
K4B1G0446D-HCF8, ◊
1Gb
4
1066
7-7-7
-
829
Samsung
K4B1G0446D-HCH9, ◊
1Gb
4
1333
9-9-9
-
829
Samsung
K4B1G0446E-HCH9, ◊
1Gb
4
1333
9-9-9
-
846
Samsung
K4B2G0446D-MCF7, µ, Φ, ª
1Gb (DDP)
4
800
6-6-6
-
829
Samsung
K4B2G0446D-MCF8, µ, Φ, ª
1Gb (DDP)
4
1066
7-7-7
-
829
Samsung
K4B2G0846B-HCF8, ◊
2Gb
8
1066
7-7-7
-
846
Samsung
K4B1G0846D-HCG9, ∇
1Gb
8
1333
8-8-8
-
808
5
DDR3 1600/1333/1066/800MHz DRAM Component Validation
Intel Platform Memory Operations Validated DDR3 1600/1333/1066/800MHz DRAM Components Density
Width
Freq
Latency CL-tRCD-tRP
Notes
Component Date Code
1Gb
8
1333
9-9-9
-
804
K4B1G1646D-HCF8, ∇
1Gb
16
1066
7-7-7
-
804
1Gb
8
1066
7-7-7
-
808
1Gb
16
800
6-6-6
-
808
K4B1G0846D-HCF7, ∇
1Gb
8
800
6-6-6
-
808
Supplier
Part Number
Samsung
K4B1G0846D-HCH9, ∇
Samsung Samsung Samsung Samsung
K4B1G0846D-HCF8, ∇ K4B1G1646D-HCF7, ∇
∇ Exceeds maximum VOX specification ° TDQS feature not functioning; not recommended to be used on RDIMM or UDIMM modules targeting server applications ± Exceeds minimum Rdie specification µ Exceeds IOL/IOH specification Φ Exceeds maximum RDL specification ª Exceeds maximum LPKG specification ¤ Exceeds maximum Slew Rate specification ◊ Write margin testing was performed at component level by Shmoo testing for voltage and timing, based on limited sampling
6
DDR3 1600/1333/1066/800MHz DRAM Component Validation
