HP MEMS SEISMIC SENSOR. Don Milligan Sensor Design Engineer

HP MEMS SEISMIC SENSOR Don Milligan Sensor Design Engineer [email protected] Introduction HP MEMS Inertial Sensing Technology has been optimized t...
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HP MEMS SEISMIC SENSOR Don Milligan Sensor Design Engineer [email protected]

Introduction HP MEMS Inertial Sensing Technology has been optimized to produce a breakthrough performance needed for Seismic Imaging requirements.

Outline: • • • • • •

Sensor Design Specifications Noise Optimization Test Results QC Self Tests Conclusions

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HP MEMS Seismic Sensor Key Features – Three single crystal silicon wafers hermetically bonded under vacuum • •

Pressure controlled for low thermal mechanical noise CTE match of substrates results in temperature stability

– Surface Electrodes • •

Constant gap allows large proofmass travel in open loop Three phase electrode configuration allows full sensitivity and range at any orientation or wafer alignment

– Custom ASIC • • •

Low noise demodulation of capacitive sensor Low power 24 bit digital output

electrodes Cap wafer MEMS wafer

Stator wafer

suspension

bond

Sensor Node and Tether Head Assembly

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Voyager Seismic Sensor Specifications Max acceleration amplitude Noise spectral density

Peak (Highest Gain Mode)

+/- 80 mG

Peak (Lowest Gain Mode)

+/- 320 mG

Noise density

< 13 nG/rt Hz

Dynamic range

120 dB

THD @ 12Hz, 68.4 mg pk acceleration (0.7 in/s pk velocity)

< -80 dB

Depth

24 bit (20 ENOB)

Sample Rate

2ms or 4ms

Passband

1-200Hz (2ms)

Cross axis sensitivity

All axes