How to Solve DDR Parametric and Protocol Measurement Challenges

How to Solve DDR Parametric and Protocol Measurement Challenges DDR Measurements Page 1 Mar. 2008 Agenda DDR Memory Technology Overview DDR Probing...
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How to Solve DDR Parametric and Protocol Measurement Challenges

DDR Measurements Page 1

Mar. 2008

Agenda DDR Memory Technology Overview DDR Probing Challenges New BGA Probe Adapters Solves Probing Challenges Protocol Validation Challenges, and Solutions Parametric Measurement Challenges, and Solutions Questions and Answers DDR Measurements Page 2

DDR Measurement Challenges

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DDR Memory Technology Everywhere SO-DIMM (Small Outline Dual In-line Memory Module) for Mobile PC

Embedded Designs for HDTV, printers, phones, projectors, cars, base stations, etc.

FPGA Design

DIMM (Dual In-line Memory Module) for Regular PC

DDR DRAM

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Comparison for DDR 1, 2, 3 Specification DDR1

Operating Voltage Clock Frequency Data Transfer Rate Pin Count Package Backward Compatibility

1.8 – 3.3 V 100 – 200 MHz 200 – 400 MT/s 184 TSOP/BGA No

DDR2

DDR3

1.8 V 1.5 V 200 – 400 MHz 400 – 800 MHz 400 – 800 MT/s 800 – 1600 MT/s 240 240 BGA BGA No No

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DDR Nomenclature as defined by JEDEC DDR SDRAM Chip Specification (for Embedded)

D D R 3 - 1 6 0 0 DDR Technology Designation

DDR Technology Generation

Data Transfer Rate (MT/s) Clock Rate is ½ Data Transfer Rate = 800 MHz

DDR DIMM Specification (for Computer)

P C 3 - 12800 DDR used in PC Designation

DDR Technology Generation

Memory Bandwidth (MB/s) Data Rate (1600) x 8 = 12,800 MB/s

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Impact on Design and Validation ƒ Clock Speeds reaching 1GHz ƒ Parallel buses reaching the speeds of serial technology ƒ Tighter timing margins require calibration and bus training for DRAM, controller, and analyzer capture ƒ Crosstalk, impedance, EMI, and jitter issues ƒ Noise susceptibility ƒ Probe load effects are critical

“I’m becoming a microwave designer!”

Memory Speed Roadmap

DDR4 3.2 GT/s DDR3 1.6 GT/s

2010+

DDR2 800 MT/s

2008+

DDR 400 MT/s

2005 SDR 100 MT/s

2002

2000

Benefits of good signal integrity ƒ Guarantees interoperability with different vendors ƒ Improved device performance ƒ More design margin

DDR Measurements

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Agenda DDR Memory Technology Overview DDR Probing Challenges New BGA Probe Adapters Solves Probing Challenges Protocol Validation Challenges, and Solutions Parametric Measurement Challenges, and Solutions Questions and Answers DDR Measurements Page 7

Mar. 2008

Probing Requirement Memory Controller

DRAM

Ideal Probing Points – DRAM Ballout

DIMM

PCB trace

DIMM Connector

JEDEC defines the DDR spec at the DRAM ballout. To fully comply with the specification, probing is recommended to be made at the DRAM ballout for most accurate results. DDR Measurements Page 8

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Probing Challenges

Where to probe?

If probing at the BGA signals is not difficult enough, new design with higher density and limited board space post an even bigger challenge. Designing special probe points or vias on the board is no longer an option.

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Alternative Probing Options and Issues for Oscilloscope Probing at the center of the trace

DRAM

Memory Controller

Many engineers will find other alternative points to probe at the DDR signals. One example above is probing at the transmission line. However, there is a risk of signal reflection and other signal integrity issues. DDR Measurements Page 10

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Issues with Current Probing Solution on Logic Analyzer • Complete Protocol validation with the logic analyzer requires access to all the buses. • Current probing method does not address individual DRAM probing • Flying leads and midbus probing methods require design-in footprints and connectors – Not practical for boards with tight board space especially on an embedded system – Tedious setup

DDR Measurements Page 11

Mar. 2008

Agenda DDR Memory Technology Overview DDR Probing Challenges New BGA Probe Adapters Solves Probing Challenges Protocol Validation Challenges, and Solutions Parametric Measurement Challenges, and Solutions Questions and Answers DDR Measurements Page 12

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Ideal Probing with DDR2 and DDR3 BGA Probe Adapters DDR2 BGA Probe Adapter for Scope and Logic Analyzer

DDR3 BGA Probe Adapter for Scope

Key Features and Benefits: • Easiest way to access your DDR signals • Superior signal integrity probing for most accuracy in measurement • Compatible with parametric and protocol measurements

W2631-34A (each ship with a kit of 4 probes)

W2635-36A (each ship with a kit of 10 probes)

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Key Feature 1: Easiest way to access your DDR signals No designated probe points

DDR2 BGA Probe Adapter

Probe Here

Probe Here

Where to probe? Probe Here

High density board

Probe Here DDR3 BGA Probe Adapter

DDR2 and DDR3 BGA probe adapters provide signal access points. DDR Measurements Page 14

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Key Feature 2: Superior signal integrity probing with embedded

resistors in BGA probe Probe Here

Probe Here

DRAM

DDR2/3 BGA Probe PCB Embedded Resistors

Embedded resistor provides isolation of the probe loading and the live signal.

Embedded resistor isolates the probe loading effect from the sig nals. signals. DDR Measurements Page 15

Mar. 2008

Key Feature 2: Superior signal integrity probing for most

accuracy in measurement

Sample Test Results from Key Customer on DDR3 BGA probe Customer’s Quote: These attenuations of waveforms are acceptable and comprehensible. Therefore, W2635A can be used for the measurements.

Without BGA Probe

With BGA Probe

Probing directly at the signals and BGA probes yield similar res ults. results. DDR Measurements Page 16

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Key Feature 3: Compatible with parametric and protocol

measurements

InfiniiMax Probes

Waveform / Data Analysis with Logic Analyzer

DDR2 and DDR3 BGA Probe Adapters

E5384A & E5826/7A LA Cable Adapters

Parametric Measurement with Infiniium Scopes

Compatible with our scope and logic analyzer probes Page 17

DDR Measurements Mar. 2008

Agenda DDR Memory Technology Overview DDR Probing Challenges New BGA Probe Adapters Solves Probing Challenges Protocol Validation Challenges, and Solutions Parametric Measurement Challenges, and Solutions Questions and Answers DDR Measurements Page 18

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Functional Validation Challenges Signal Integrity issues create inaccurate timing and protocol measurement. We need to be able to access and analyze all the buses at the same time to obtain an overview of the bit error rate and SI issues. Accurate Read and write data capture for protocol analysis. We need to be able to sample at the correct sampling position on both read and write data valid window to enable accurate state capture. Spending a lot of time on the work bench, trying to analyze the raw command, bank address and read/write data from the captured trace.

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EyeScan Feature for Quick SI Check EyeScan result gives a superior and quick SI insight to all the memory buses including Address, Command, Control and Data.

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Protocol Decode Tool

Protocol Decode provides the following for easy memory bus analysis: ƒ Command ƒ Bank Address ƒ Column Address ƒ Read or Write Data

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NEW DDR3 EyeFinder SW The DDR3 EyeFinder software helps you position the sampling points for accurate read and write data capture. The software triggers on valid read and write commands with your system executing any memory test suite or stimulus program. The software will then display read and write data valid window as a result of the scan.

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Agenda DDR Memory Technology Overview DDR Probing Challenges New BGA Probe Adapters Solves Probing Challenges Protocol Validation Challenges, and Solutions Parametric Measurement Challenges, and Solutions Questions and Answers DDR Measurements Page 23

Mar. 2008

Scope Required Bandwidth for DDR Validation Rise Time Memory App

Signal Rate

Fundamental Calculated Freq Fastest Tr/Tf from JEDEC spec

Real Signal Tr/Tf

Optimum Bandwidth

Most likely Material

DDR1 Up to 400MT/s

200MHz

155ps (20-80%)

600 (20-80%)

600MHz - 1GHz

FR4

DDR2 Up to 800MT/s

400MHz

100ps (20-80%)

200 (20-80%)

2GHz - 4GHz

FR4

DDR3

800MHz

60ps (20-80%)

100 (20-80%)

4GHz - 8GHz

FR4

Up to 1.6GT/s

y No mention of signal rise/fall time or bandwidth specification in JEDEC DDR spec. y Bandwidth requirement is a function of rise time. Rise time is a function of signal slew rate and amplitude. Using the information in spec, the fastest rise time can be calculated. y Although the calculated fastest rise time looks aggressive for silicon, the real performance is much slower. This is due to the cheaper FR4 materials and connectors used in the real product design and manufacturing. y The actual signal bandwidth is lower with the higher signal harmonics filtered. DDR Measurements Page 24

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Challenges That Needs to be Addressed Today •

Probing system response. We have the BGA probes to address signal accessibility. Is that all? Actually, the entire probing system (including the probe and scope) has effect on the measurement results.



Read and write signal separation on the same bus. We need to trigger using the controls signals, but sometimes scope channels are not enough to get a stable trigger. We need to do many single acquisitions.



Not productive, too much time and effort required. Engineers need to manually making measurements of the signals. The maximum measurements is limited. Too much effort to put all results into a test report.

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Probing System Response Performance of probing system is a combination of both scope and probe. You need the flattest probing response for full confidence in DDR measurement results. Select a probing where the signals track directly with the signals measured with SMA connection. As DDR signals are mostly single-ended, probing is a major consideration for accurate and repeatable measurement. Agilent DSA91204 + N5381A

Magnitude (dB)

Choose a probing solution you are confidence with. Evaluate its performance if you have to. You need to have the full confidence especially if you are validating a new design.

6.0 5.0 4.0 3.0 2.0 1.0 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0

Company X+ Various Solder-ins

Solder-in

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Frequency (GHz)

Magnitude (dB)

Magenta: SMA direct Green: Probing

6.0 5.0 4.0 3.0 2.0 1.0 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0

High BW 00D High BW 90D Short Solder-in Med Solder-in Long Solder-in 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Frequency (GHz)

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More InfiniiMax Probe Innovations Need temperature characterization?

N5450A InfiniiMax Extreme Temperature Cable Extension

ƒ Solution with Gore Cable Extension specially developed for InfiniiMax ƒ Perfect solution for the environmental chamber testing ƒ Agilent exclusive solution with 36 inches long (92cm) reach ƒ Two Different Operating Temp depending of the probe head ƒ N5381A solder-in: -55 to +150°C ƒ E2677A solder-in: -25 to +80°C

Need probing with larger pitch size? N5451A InfiniiMax Long Wire ZIF Tip

ƒ Wider span than standard ZIF Tip to probe signal like DDR system with larger pitch size. Need to reach to the ground point on the board. ƒ Two different wire length: 7 mm (>6GHz) and 11 mm (>4.5GHz)

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Use InfiniiScan to separate Read and Write signals There is no rule how to use the zones to separate the read or write signals. It depends on the silicon characteristics and DIMM loading which shows distinctive difference between the read and write signals.

High Impedance State DQS read or write normal bits

DQS read or write normal bits High impedance state

DQS read or write preamble bit

Use InfiniiScan ““Zone Zone Qualify Qualify”” to trigger on Read and Write distinctive waveform pattern. DDR Measurements Page 28

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Read-Write Separation – Step 1 A “Must Not Intersect” zone is drawn on the DQS waveform to discard the normal bits or idle state signals.

With the “Must Not Intersect” zone drawn, the scope consistently tracks the preamble DQ signal is tracked at bits of the read and write the beginning of the signals. read or write burst, but not separated yet. DDR Measurements Page 29

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Read-Write Separation – Step 2 Drawing a “Must Intersect” zone at the upper pre-amble bit voltage isolates the Write separation. Compare the DQS and DQ edges. Write Separation – Edges not aligned

Drawing a “Must Intersect” zone at the lower pre-amble bit voltage isolates the Read separation. Compare the DQS and DQ edges. Read Separation – Edges are aligned

Read and Write separation made easy with InfiniiScan ““Zone Zone Qualify Qualify”” DDR Measurements Page 30

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Debugging Clock Jitter Issues with EZJIT tool

Find Correlation Analyze Jitter spectrum

25MHz oscillator

50MHz oscillator

EZJIT is a great tool to debug clock jitter issues. Analyzing the clock error spectrum, you can identify the source of the clock jitter coupled to your DDR clock signal.

Power switching line

Clock error trend

Comparing the low-pass filtered jitter trend with signals like power line, you can correlate the clock jitter with power switching line with EZJIT.

DDR Measurements Page 31

Mar. 2008

List of JEDEC DDR3 Test Parameters Specification JESD79-3 DDR3 SDRAM Specifications

Test Parameters

Table 26 – Single Ended AC and DC Input Levels (Page 103) Vih(dc), Vil(dc), Vih(ac), Vih(dc) Table 27 – Differential AC and DC input levels (Page 105) VIHdiff, VILdiff Table 28 – Cross Point Voltage for Differential Input Signals Vix (CK, DQS) (Page 105) Table 31 – Single Ended AC and DC Output Levels (Page 109) Voh(dc), Vom(dc), Vol(dc), Voh(ac), Vol(ac) Table 32 – Differential Output Slew Rate (Page 109) VOHdiff(ac), VOLdiff(ac) Table 34 – Output Slew Rate (Single-Ended) (Page 110) SRQse Table 36 – Differential Output Slew Rate (Page 111) SRQdiff Table 37 – AC Overshoot/Undershoot Specification for Maximum peak amplitude for overshoot area, Maximum peak Address and Control Pins (Page 113) area for undershoot area, Maximum overshoot area above VDD, Maximum undershoot area below VSS Table 38 – AC Overshoot/Undershoot Specification for Clock, Maximum peak amplitude for overshoot area, Maximum peak Data, Strobe and Mask (Page 114) area for undershoot area, Maximum overshoot area above VDDQ, Maximum undershoot area below VSSQ Table 66 – Timing Parameters by Speed Bin (Page 153) tCK(avg), tJIT(per), tJIT(cc), tERR(2per), tERR(3per), tERR(4per), tERR(5per), tERR(nper), tERR(nper2), tCH(avg), tCL(avg), tJIT(duty), tAC, tDQSCK, tDQSQ, tQH, tDQSS, tDSS, tDSH, tHZDQ, tHZDQS, tLZDQ, tLZDQS, tWPRE, tWPST, tRPRE, tRPST, tDQSH, tDQSL, tDS(base), tDH(base), tIS(base), tIH(base)

Huge list of DDR3 test parameters that have to be verified. DDR Measurements Page 32

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Setting Up the DDR App for Measurements - 1 Select the DDR speed grade.

Selecting the tests.

Configure the apps before the measurements.

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Setting Up the DDR App for Measurements - 2 Making sure you have made the right connections to your device and scope. User can choose to repeat the measurements. Run the tests.

Result summary page. Includes margin analysis on how close your device passes of fails the spec. DDR Measurements Page 34

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Example of Automated Measurements Eye-Diagram Analysis

Write Preamble Width

DQ Setup Time

Falling Edge Slew Rate

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Automated HTML Report Generation

The app automatically generates a HTML report for sharing with others or result archiving purpose.

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Summary • New DDR technology speeds and architecture are driving new design and measurement techniques. • Superior signal integrity and BGA probing technology is required for the most accurate DDR validation. • Validation that would have otherwise been very difficult are made easy through new instrument capabilities • Powerful triggering and signal processing • Automated testing of compliance thru SW applications • Protocol aware calibration and data capture

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For Additional Information Agilent’s DDR technology webpage: • www.agilent.com/find/ddr BGA Probe Information: • www.agilent.com/find/ddr2bga • www.agilent.com/find/ddr3bga-scope A Time-Saving Method for Analyzing Signal Integrity for DDR Buses Application Note: • http://cp.literature.agilent.com/litweb/pdf/5989-6664EN.pdf • http://www.techonline.com/learning/techpaper/199701791 InfiniiScan Product Info • www.agilent.com/find/InfiniiScan Memory Solution with Logic analyzer: • http://www.home.agilent.com/USeng/nav/-536902586.0/pc.html

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Questions and Answers

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Backup Information

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DDR2 and DDR3 BGA Probe Model Number DDR2 BGA Probe Adapter for Logic Analyzer and Scope W2631A

DDR2 x16 BGA command and data probe (4 units)

W2632A

DDR2 x16 BGA data probe (4 units)

W2633A

DDR2 x8 BGA command and data probe (4 units)

W2634A

DDR2 x8 BGA data probe (4 units)

E5384A

46-ch single-ended ZIF probe for x8/x16 DRAM BGA probe connect to 90-pin LA cable

E5876A

46-ch single-ended ZIF probe for x16 DRAM data only BGA probe connect to 90-pin LA cable

E5877A

46-ch single-ended ZIF probe for 2 x8 DRAM data only BGA probe connect to 90-pin LA cable

1130/60A

InfiniiMax probe amplifier

N5424A/25A

ZIF probe head and tips

N5381A

Solder-in probe head

DDR3 BGA Probe Adapter for Scope W2635A-010

x8, 10 mm width DDR3 BGA probe adapter for x4 and x8 DRAM package (10 units)

W2635A-011

x8, 11 mm width DDR3 BGA probe adapter for x4 and x8 DRAM package (10 units)

W2636A-010

x16, 10 mm width DDR3 BGA probe adapter for x16 DRAM package (10 units)

W2636A-011

x16, 11 mm width DDR3 BGA probe adapter for x16 DRAM package (10 units)

1130/60A

InfiniiMax probe amplifier

N5424A/25A

ZIF probe head and tips

N5381A

Solder-in probe head

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