College of Optics & Photonics: CREOL & FPCE at UCF
CLUSTER
JET
SOLID DROPLET
Xe
Xe
Xe, Sn, Li
0.5%
DEBRIS ions @ 10 kHz
0.7%
ions cold shards
Xe = 0.5% Sn = 0.5% Li = 2.5% ions 700 kgms/yr
DOPED DROPLET
Sn 2.3%
ions < 100 gms/yr
The LPL tin-doped micro-droplet laser-plasma EUV source Laser Plasma Laboratory
College of Optics & Photonics: CREOL & FPCE at UCF
30 kHz source Mass-limited target regime – mass of tin 30 kHz stable laser irradiation demonstrated 35 μm within droplet limited to the number of
Laser shoots everyradiators droplet! heated by the laser – atomic 13 atoms per droplet. t~ 10 Motion control Intelligent 3 –D imaging feedback system Target supply
controls target and laser beam pointing Multi-component target
[1] Chemical Tin liquids 3-D droplet stability of 3 μm [2] Liquid solutions of Delay control Laser trigger Tin 24 hour operation at nanoparticles 30 kHz
Laser beam
Droplet US Patents 6,862,339 Imaging Single term operation velocity 30 for m/s several days International patents
already demonstrated
Targets
Plasma
Imaging
& 6,831,963 + Position analysis Post processing
30% target mass in tin only ~ 1% atoms are tin
Mirror Erosion from Tin ions Laser Plasma Laboratory
College of Optics & Photonics: CREOL & FPCE at UCF
Sputtering yield calculation
Ion energy distributions Sputtering rate Si : 1.4 x 108 shots/nm Mo: 1.3 x 108 shots/nm 5.0E+06
10
Sn+ Sn2+ Sn3+ Sn4+ Sn5+
0.0E+00 100
Without mitigation at 70 kHz Sputtered atoms 1000
10000
Sputtering yield [atoms/ion]
dN/dE
1.0E+07
After 1.4 x 1010 shots 40 bi-layers reduced to 25 Reflectivity 73% to 66%
KE [eV]
Mo
SRIM calculation Normal incident 0.1 100
100000
Si
1
~ 60 hours operation for mirror failure 1000
10000
100000
Incident ion energy [eV]
Sputtering impact of ion species
1.0E+04
1.8E+07
9.0E+03
1.6E+07
8.0E+03
1.4E+07
7.0E+03
Sn+
6.0E+03
Sn2+
5.0E+03
Sn3+
4.0E+03
Sn4+ Sn5+
3.0E+03 2.0E+03
1.2E+07 1.0E+07 8.0E+06 6.0E+06 4.0E+06 2.0E+06
1.0E+03 0.0E+00 100
# of sputtered atoms
dNsputtered dE
Factor of ~ 500 shorter than the 30,000 hr Si requirement 0.0E+00 1000
10000
Incident ion energy [eV]
100000
Sn+
Sn2+
Sn3+
Sn4+
Sn5+
The wavelength issue Laser Plasma Laboratory
College of Optics & Photonics: CREOL & FPCE at UCF
Wavelength targets 351 nm
532 nm
1064 nm
Solid Tin
1.2% Cymer
6.0% UCF
Doped tin
0.5 % UCF (new)
2.25 % UCF (2005)
Li
2.5% Cymer (2005) 3.0% Cymer (2005)
2.6% (Cymer 2005) 2.2% UCF (new)
Xe
0.86% (Extreme)
10.6 μm
0.5% (EUVA)
So Tin is best with 1064 nm laser light Laser Plasma Laboratory
115 W @ IF will require 230 W source power Ideal source 30 μm dia. droplet 30 – 100 kHz operation 100 – 300 mJ/pulse
Projected Power 230 W @ IF
College of Optics & Photonics: CREOL & FPCE at UCF
With current assuming 2π collection and
Laser Power ~ 10 kW
50% EUV Target CEtransport = 2.3%
13 13Sn atoms/ target ~ ~1010 Sn atoms/ target 17 17Sn atoms/s (30 kHz) ~ ~3 3x x1010 Sn atoms/s (30 kHz) 20 20 few 100 grams ~ ~1010 Sn atoms/hr Sn atoms/hr 24of 24 Tin a year ~ ~3 3x x1010 Sn atoms for Sn atoms for30,000 30,000hrs hrs
200 kHz source
+
Two 10 kW lasers ~ 500 gms Tin/yr
Trends - Lasers Laser Plasma Laboratory
College of Optics & Photonics: CREOL & FPCE at UCF
CO2 10 μm MOPA design Electric Efficiency < 10 % Footprint > 10 m2 Price - reasonable
NEW Solid State Nd:YAG 1064 nm or Yb:glass fiber 1060 nm MOPA, Battery or multiple fiber design DPSL Efficiency 10% -30% Footprint ~ m2 Price - reasonable
New DPSS Laser technologies Laser Plasma Laboratory
College of Optics & Photonics: CREOL & FPCE at UCF
NEW ARCHITECTURES - battery lasers HELLADS laser GA disc amplifier LMA fibers NEW DIODES – Lower cost diodes $10/W $5/W Ultra- efficient diodes 65- 80% wallplug (SHEDS) High brightness diodes – narrow New applications - High power DPSL’s for interdiction, guide-star and detection - Industrial applications in machine fab, - Cost Driver on Diodes.
Cost of Ownership Laser Plasma Laboratory
College of Optics & Photonics: CREOL & FPCE at UCF
10 kW 1064 nm 30 – 100 kHz Can 10 kW solid-state lasers be built for a reasonable cost? Laser Requirements for Current Source: 115 W @ IF 230 W Source Power CE = 2.3% Laser Power = 10 kW
