NJG1159PHH GNSS Front-End Module I GENERAL DESCRIPTION
I PACKAGE OUTLINE
The NJG1159PHH is a front-end module (FEM) designed for GNSS including GPS, GLONASS, BeiDou, and Galileo applications. This FEM offers low noise figure, high linearity, and high out-band rejection characteristics brought by included high performance pre-SAW filter and low noise amplifier (LNA). This FEM can operate from 1.5V to 3.3V single voltage in -40 to 105°C. This FEM has stand-by mode to save current consumption. This FEM offers very small mounting area by included one SAW filter, only two external components, and very small package HFFP10-HH that is 1.5x1.1mm.
I FEATURES G Available for GNSS G Low supply voltage G Low current consumption G High gain G Low noise figure
G High out band rejection
G Small package size G RoHS compliant and Halogen Free, MSL1
1.8/ 2.8V typ. 3.0/3.7mA typ. @VDD=1.8/ 2.8V, VCTL=1.8V 0.1µA typ. @VDD=1.8/ 2.8V, VCTL=0V (Stand-by mode) 15.5/16.0dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz, 1559 to 1591MHz 1.55/1.50dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz 1.70/1.65dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1597 to 1606MHz 1.75/1.70dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1559 to 1591MHz 55dBc typ. @f=704 to 915MHz, relative to 1575MHz 43dBc typ. @f=1710 to 1980MHz, relative to 1575MHz 51dBc typ. @f=2400 to 2500MHz, relative to 1575MHz HFFP10-HH: 1.5mmx1.1mm (typ.), t=0.5mm (max.)
I PIN CONFIGURATION
1 pin index
(Top View) GND
VDD
1
I BLOCK DIAGRAM
9
VCTL
VCTL LNAOUT
8 LNAIN
2
7 LNA
GND
Pre-Filter
3
6
PreIN
4
PreOUT
GND
10
5
Pin Connection 1. VDD 2. VCTL 3. GND 4. PreIN 5. GND 6. PreOUT 7. LNAIN 8. LNAOUT 9. GND 10. GND
RF IN
VDD
Pre-Filter
RF OUT LNA
GND
GND
I TRUTH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL Mode H Active mode L Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2016-04-18
-1-
NJG1159PHH I ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50Ω PARAMETERS
SYMBOL
CONDITIONS
RATINGS
UNITS
Supply voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
10
dBm
25
dBm
560
mW
PIN (inband) Input power PIN (outband)
VDD=2.8V, f=1575, 1597 to 1606, 1559 to 1591MHz VDD=2.8V, f=50 to 1460, 1710 to 4000MHz 4-layer FR4 PCB without through-hole (101.5x114.5mm), Tj=110°C
Power dissipation
PD
Operating temperature
Topr
-40 to +105
°C
Storage temperature
Tstg
-40 to +110
°C
I ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: Ta=+25°C) PARAMETER
MIN
TYP
MAX
UNITS
VDD
1.5
-
3.3
V
Control Voltage (High)
VCTL(H)
1.5
1.8
3.3
V
Control Voltage (Low)
VCTL(L)
0
0
0.3
V
-
3.7
-
mA
-
3.0
-
mA
-
0.1
5.0
µA
-
0.1
5.0
µA
-
5.0
15.0
µA
Supply Voltage
SYMBOL
Supply Current 1
IDD1
Supply Current 2
IDD2
Supply Current 3
IDD3
Supply Current 4
IDD4
Control Current
ICTL
CONDITIONS
RF OFF, VDD=2.8V, VCTL=1.8V RF OFF, VDD=1.8V, VCTL=1.8V RF OFF, VDD=2.8V, VCTL=0V RF OFF, VDD=1.8V, VCTL=0V VCTL=1.8V
-2-
NJG1159PHH I ELECTRICAL CHARACTERISTICS 2 (RF) General conditions: VDD=2.8V, VCTL=1.8V, fRF=1575MHz, 1597 to 1606, 1559 to 1591MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit PARAMETER Small Signal Gain (GPS)1 Small Signal Gain (GLONASS)1 Small Signal Gain (BeiDou, Galileo)1 Noise Figure (GPS)1 Noise Figure (GLONASS)1 Noise Figure (BeiDou, Galileo)1 Input Power at 1dB Gain Compression Point 1 Input 3rd Order Intercept Point 1 Out of Band Input 2nd Order Intercept Point 1 Out of Band Input 3rd Order Intercept Point 1 700MHz Harmonic1
Out-of-Band Input Power 1dB Compression 1
SYMBOL GainGPS1 GainGLN1 GainBG1 NFGPS1 NFGLN1 NFBG1 P-1dB(IN)1 IIP3_1
IIP2_OB1
IIP3_OB1
2fo1
MIN
TYP
MAX
UNITS
-
16.0
-
dB
-
16.5
-
dB
-
16.0
-
dB
-
1.50
-
dB
-
1.65
-
dB
-
1.70
-
dB
-
-10.0
-
dBm
-
-2.0
-
dBm
-
+80
-
dBm
-
+55
-
dBm
-
-37
-
dBm
P-1dB(IN) _OB1-1
fjam=900MHz, fmeas=1575MHz at Pin=-40dBm
-
+24
-
dBm
P-1dB(IN) _OB1-2
fjam=1710MHz, fmeas=1575MHz at Pin=-40dBm
-
+24
-
dBm
-
55
-
dBc
-
43
-
dBc
-
51
-
dBc
Low Band Rejection 1
BR_L1
High Band Rejection 1
BR_H1
WLAN Band Rejection 1
BR_W1
RF IN Return Loss (GPS)1 RF IN Return Loss (GLONASS)1 RF IN Return Loss (BeiDou, Galileo)1 RF OUT Return Loss (GPS)1 RF OUT Return Loss (GLONASS)1 RF OUT Return Loss (BeiDou, Galileo)1 Group Delay Time Deviation (GLONASS) 1 Group Delay Time Deviation (BeiDou)1 Group Delay Time Deviation (Galileo)1
CONDITIONS f=1575MHz (GPS) Exclude PCB, Connector Losses (0.17dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.17dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.17dB) f=1575MHz (GPS)Exclude PCB, Connector Losses (0.09dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.09dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.09dB) f=1575, 1597 to 1606, 1559 to 1591MHz f1=1575,1597 to 1606,1559 to 1591MHz, f2=f1 +/-1MHz, Pin=-30dBm f1=824.6MHz at +15dBm, f2=2400MHz at +15dBm, fmeas=1575.4MHz f1=1712.7MHz at +15dBm, f2=1850MHz at +15dBm, fmeas=1575.4MHz Input jammer tone: 787.76MHz at +15dBm Measure the harmonic tone at 1575.52MHz
f=704 to 915MHz, relative to 1575MHz f=1710 to 1980MHz, relative to 1575MHz f=2400 to 2500MHz, relative to 1575MHz
RLiGPS1
f=1575MHz (GPS)
-
10
-
dB
RLiGLN1
f=1597 to 1606MHz (GLONASS)
-
15
-
dB
f=1559 to 1591MHz (BeiDou, Galileo)
-
13
-
dB
RLoGPS1
f=1575MHz (GPS)
-
15
-
dB
RLoGLN1
f=1597 to 1606MHz (GLONASS)
-
15
-
dB
f=1559 to 1591MHz (BeiDou, Galileo)
-
15
-
dB
f=1597 to 1606MHz (GLONASS)
-
3
-
ns
GDTDB1
f=1559 to 1563.2MHz (BeiDou)
-
4
-
ns
GDTDG1
f=1559 to 1591MHz (Galileo)
-
9
-
ns
RLiBG1
RLoBG1 GDTDGLN1
-3-
NJG1159PHH I ELECTRICAL CHARACTERISTICS 3 (RF) General conditions: VDD=1.8V, VCTL=1.8V, fRF=1575MHz, 1597 to 1606, 1559 to 1591MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit PARAMETER Small Signal Gain (GPS)2 Small Signal Gain (GLONASS)2 Small Signal Gain (BeiDou, Galileo)2 Noise Figure (GPS)2 Noise Figure (GLONASS)2 Noise Figure (BeiDou, Galileo)2 Input Power at 1dB Gain Compression Point 2 Input 3rd Order Intercept Point 2 Out of Band Input 2nd Order Intercept Point 2 Out of Band Input 3rd Order Intercept Point 2 700MHz Harmonic2
Out-of-Band Input Power 1dB Compression 2
SYMBOL GainGPS2 GainGLN2 GainBG2 NFGPS2 NFGLN2 NFBG2 P-1dB(IN)2 IIP3_2
IIP2_OB2
IIP3_OB2
2fo2
P-1dB(IN) _OB2-1 P-1dB(IN) _OB2-2
Low Band Rejection 2
BR_L2
High Band Rejection 2
BR_H2
WLAN Band Rejection 2
BR_W2
RF IN Return Loss (GPS)2 RF IN Return Loss (GLONASS)2 RF IN Return Loss (BeiDou, Galileo)2 RF OUT Return Loss (GPS)2 RF OUT Return Loss (GLONASS)2 RF OUT Return Loss (BeiDou, Galileo)2 Group Delay Time Deviation (GLONASS) 2 Group Delay Time Deviation (BeiDou)2 Group Delay Time Deviation (Galileo)2
CONDITIONS f=1575MHz (GPS) Exclude PCB, Connector Losses (0.17dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.17dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.17dB) f=1575MHz (GPS)Exclude PCB, Connector Losses (0.09dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.09dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.09dB) f=1575, 1597 to 1606, 1559 to 1591MHz f1=1575, 1597 to 1606, 1559 to 1591MHz, f2=f1 +/-1MHz, Pin=-30dBm f1=824.6MHz at +15dBm, f2=2400MHz at +15dBm, fmeas=1575.4MHz f1=1712.7MHz at +15dBm, f2=1850MHz at +15dBm, fmeas=1575.4MHz Input jammer tone: 787.76MHz at +15dBm Measure the harmonic tone at 1575.52MHz fjam=900MHz, fmeas=1575MHz at Pin=-40dBm fjam=1710MHz, fmeas=1575MHz at Pin=-40dBm f=704 to 915MHz, relative to 1575MHz f=1710 to 1980MHz, relative to 1575MHz f=2400 to 2500MHz, relative to 1575MHz
MIN
TYP
MAX
UNITS
-
15.5
-
dB
-
16.0
-
dB
-
15.5
-
dB
-
1.55
-
dB
-
1.70
-
dB
-
1.75
-
dB
-
-13.0
-
dBm
-
-5.0
-
dBm
-
+80
-
dBm
-
+55
-
dBm
-
-37
-
dBm
-
+24
-
dBm
-
+24
-
dBm
-
55
-
dBc
-
43
-
dBc
-
51
-
dBc
RLiGPS2
f=1575MHz (GPS)
-
10
-
dB
RLiGLN2
f=1597 to 1606MHz (GLONASS)
-
15
-
dB
f=1559 to 1591MHz (BeiDou, Galileo)
-
13
-
dB
RLoGPS2
f=1575MHz (GPS)
-
15
-
dB
RLoGLN2
f=1597 to 1606MHz (GLONASS)
-
15
-
dB
f=1559 to 1591MHz (BeiDou, Galileo)
-
15
-
dB
f=1597 to 1606MHz (GLONASS)
-
3
-
ns
GDTDB2
f=1559 to 1563.2MHz (BeiDou)
-
4
-
ns
GDTDG2
f=1559 to 1591MHz (Galileo)
-
9
-
ns
RLiBG2
RLoBG2 GDTDGLN2
-4-
NJG1159PHH I TERMINAL INFORMATION No.
SYMBOL
DESCRIPTION
1
VDD
Supply voltage terminal. Please connect bypass capacitor C1 with ground as close as possible.
2
VCTL
Control voltage terminal.
3
GND
4
PreIN
5
GND
6
PreOUT
7
LNAIN
RF input terminal. This terminal requires only a matching inductor L1, and does not require DC blocking capacitor because of integrated capacitor.
8
LNAOUT
RF output terminal. This terminal requires no DC blocking capacitor since this terminal has integrated DC blocking capacitor.
9
GND
Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance.
10
GND
Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance.
Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF input terminal. This terminal connects to input of pre-SAW filter. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Pre-SAW filter output terminal. This terminal connects to LNAIN with L1.
-5-
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
S11, S22
S21, S12
VSWR
Zin, Zout
-6-
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
S21 vs. frequency
NF, Gain vs. frequency (VDD=2.8V, VCTL=1.8V)
4
20
Gain
10 15
10
2
NF
1
0
S21 (dB)
3
Gain (dB)
Noise Figure (dB)
(VDD=2.8V, VCTL=1.8V)
20
5
-10 -20 -30 -40 -50
(NF, Gain: Exclude PCB, Connector Losses)
0 1.54
1.56
1.58
1.60
0 1.64
1.62
-60 0.0
0.5
frequency (GHz)
1.0
1.5
2.0
2.5
3.0
frequency (GHz)
Group Delay vs. frequency (VDD=2.8V, VCTL=1.8V)
30
Group Delay (ns)
25
20
15
10
5
0 1.55
1.56
1.57
1.58
1.59
1.60
1.61
1.62
frequency (GHz)
Pout, I
vs. Pin
Pout, IM3 vs. Pin
DD (VDD=2.8V, VCTL=1.8V, fRF=1575MHz)
10
(VDD=2.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz)
20
8
OIP3=+14.9dBm 7
P-1dB(OUT)=+4.7dBm
Pout (dBm)
6
IDD
-5
5
Pout
4
-15
3
-20
2
Pout , IM3 (dBm)
Pout
0
-10
0
IDD (mA)
5
-20
-40
-60
IM3
-80
P-1dB(IN)=-10.8dBm -25 -40
IIP3=-1.6dBm 1
-30
-20
-10
Pin (dBm)
0
10
-100 -40
-30
-20
-10
0
10
Pin (dBm)
-7-
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
Out-of-band P-1dB (fjam=900MHz)
Out-of-band P-1dB (fjam=1710MHz)
(VDD=2.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20
(VDD=2.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20
7
16
7
14
6
14
6
12
5
12
5
Gain (dB)
IDD
10
4
8 6
P-1dB(IN)_OB>+26.0dBm
8
2
6
(Gain: Exclude PCB, Connector Losses)
4 -40
-20
-10
0
3
10
20
4 -40
30
1 -30
-10
0
10
20
Out-of-band IIP2
Out-of-band IIP3
(VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz, f2=2400MHz)
(VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=1712.7MHz, f2=1850MHz)
100 80
80
60
60
Pout , IM3 (dBm)
Pout , IM2 (dBm)
-20
40
Pout
0 -20 -40
IM2
-60
30
Pin at 1710MHz (dBm)
100
20
2
P-1dB(IN)_OB=+25.3dBm
Pin at 900MHz (dBm)
120
4
(Gain: Exclude PCB, Connector Losses)
1 -30
IDD
10
3
8
Gain
IDD (mA)
16
Gain (dB)
18
Gain
IDD (mA)
8
18
40 20 0
Pout
-20 -40
IM3
-60 -80
-80 IIP2_OB=+86.1dBm -100 -40
-20
0
20
40
60
80
IIP3_OB=+54.5dBm 100
Pin (dBm)
-100 -40
-20
0
20
40
60
80
Pin (dBm)
2nd Harmonics (VDD=2.8V, VCTL=1.8V, fin=787.76MHz, fmeas=1575.52MHz)
0
2nd Harmonics (dBm)
-10 -20 -30
2fo=-35.9dBm
-40 -50 -60 -70 -80 -90 -100 -20
-10
0
10
20
30
Pin (dBm)
-8-
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
S11, S22
S21, S12
VSWR
Zin, Zout
-9-
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
S21 vs. frequency
NF, Gain vs. frequency (VDD=1.8V, VCTL=1.8V)
4
20
Gain
10 15
2
10
NF
1
0
S21 (dB)
3
Gain (dB)
Noise Figure (dB)
(VDD=1.8V, VCTL=1.8V)
20
5
-10 -20 -30 -40 -50
(NF, Gain: Exclude PCB, Connector Losses)
0 1.54
1.56
1.58
1.60
0 1.64
1.62
-60 0.0
0.5
frequency (GHz)
1.0
1.5
2.0
2.5
3.0
frequency (GHz)
Group Delay vs. frequency (VDD=1.8V, VCTL=1.8V)
30
Group Delay (ns)
25
20
15
10
5
0 1.55
1.56
1.57
1.58
1.59
1.60
1.61
1.62
frequency (GHz)
Pout, I
vs. Pin
Pout, IM3 vs. Pin
DD (VDD=1.8V, VCTL=1.8V, fRF=1575MHz)
10
20
8
5
(VDD=1.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz) OIP3=+11.5dBm
7
0
P-1dB(OUT)=+1.2dBm
-5 -10
5
Pout
4
IDD -15
3
-20
2
IDD (mA)
Pout (dBm)
6
Pout , IM3 (dBm)
Pout
0
-20
-40
-60
IM3
-80 IIP3=-4.3dBm
P-1dB(IN)=-13.6dBm -25 -40
1 -30
-20
-10
Pin (dBm)
0
10
-100 -40
-30
-20
-10
0
10
Pin (dBm)
- 10 -
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
Out-of-band P-1dB (fjam=900MHz)
Out-of-band P-1dB (fjam=1710MHz)
(VDD=1.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20
(VDD=1.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20
Gain
Gain
14
6
14
6
12
5
12
5
10
4
10
4
IDD
8 6
P-1dB(IN)_OB>+26.0dBm
Gain (dB)
16
IDD (mA)
7
16
Gain (dB)
8
18
3
8
2
6
(Gain: Exclude PCB, Connector Losses)
4 -40
-20
-10
0
IDD
10
20
4 -40
30
1 -30
0
10
20
Out-of-band IIP2
Out-of-band IIP3 (VDD=1.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=1712.7MHz, f2=1850MHz)
100
80
60
60
Pout , IM3 (dBm)
Pout , IM2 (dBm)
-10
(VDD=1.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz, f2=2400MHz)
80
40
Pout
0
-20
-20 -40
IM2
-60
30
Pin at 1710MHz (dBm)
100
20
2
P-1dB(IN)_OB=+23.1dBm
Pin at 900MHz (dBm)
120
3
(Gain: Exclude PCB, Connector Losses)
1 -30
7
IDD (mA)
8
18
40 20 0
Pout
-20 -40
IM3
-60 -80
-80 IIP2_OB=+84.4dBm -100 -40
-20
0
20
40
60
80
IIP3_OB=+53.3dBm 100
Pin (dBm)
-100 -40
-20
0
20
40
60
80
Pin (dBm)
2nd Harmonics (VDD=1.8V, VCTL=1.8V, fin=787.76MHz, fmeas=1575.52MHz)
0
2nd Harmonics (dBm)
-10 -20 -30
2fo=-34.8dBm
-40 -50 -60 -70 -80 -90 -100 -20
-10
0
10
20
30
Pin (dBm)
- 11 -
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit
NF, Gain vs. Temperature
Return Loss vs. Temperature
(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)
3.5
20
(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)
20
2.5
16
2.0
14
1.5
12
NF
10
1.0
Return Loss (dB)
18
Gain (dB)
Noise Figure (dB)
Gain 3.0
RLo
15
10
RLi
5
8
0.5 (NF, Gain: Exclude PCB, Connector Losses)
0.0 -60
-40
-20
0
20
40
60
80
100
6 120
0 -60
-40
-20
Temperature (oC)
(VDD=2.8V, VCTL=1.8V)
Group Delay Time Deviation (ns)
Band Rejection (dBc)
915MHz
40
40
60
80
100
120
(VDD=2.8V, VCTL=1.8V, fRF=1597~1606, 1559~1563.2, 1559~1591MHz)
20
60
50
20
Group Delay Time Deviation vs. Temperature
Band Rejection vs. Temperature 70
0
Temperature (oC)
2400MHz 1980MHz
30
Galileo (1559~1591MHz)
15
10
BeiDou (1559~1563.2MHz)
5
GLONASS (1597~1606MHz)
20 -60
-40
-20
0
20
40
60
80
100
0 -60
120
o
1.0
IDD (mA) @Active Mode
IDD (Active Mode)
0.8
0.6
3
0.4
2
IDD (Standby Mode)
1
0 -60
-40
-20
20
40
60
80
100
120
1.2
5
4
0
vs. Temperature
DD (VDD=2.8V, VCTL=1.8V/0V, RF OFF)
6
-20
0
20
40
60
80
100
0.2
IDD (µ µ A) @Standby Mode
I
-40
Temperature (oC)
Temperature ( C)
0.0 120
Temperature (oC)
- 12 -
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit
P-1dB(IN) vs. Temperature
OIP3, IIP3 vs. Temperature
(VDD=2.8V, VCTL=1.8V, fRF=1575MHz)
(VDD=2.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm) 6 18
16
-10
OIP3 (dBm)
P-1dB(IN) (dBm)
-8
P-1dB(IN)
-12
-14
-16
4
14
2
12
0
10
IIP3
-2
-4
8
-18 -60
-40
-20
0
20
40
60
80
100
6 -60
120
-40
-20
0
20
40
60
80
100
-6 120
Temperature (oC)
Temperature (oC)
Out-of-band IIP2 vs. Temperature
Out-of-band IIP3 vs. Temperature
90
IIP2_OB
80
70
60
50 -60
-40
-20
(VDD=2.8V, VCTL=1.8V, fmeas=1575MHz, f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm) 80
Out-of-band IIP3 (dBm)
(VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm) 100
Out-of-band IIP2 (dBm)
OIP3
0
20
40
60
80
100
120
Temperature (oC)
IIP3 (dBm)
-6
70
60
IIP3_OB 50
40
30 -60
-40
-20
0
20
40
60
80
100
120
Temperature (oC)
2nd Harmonics vs. Temperature
2nd Harmonics (dBm)
-10
(VDD=2.8V, VCTL=1.8V, fmeas=1575.52MHz, fin=787.76MHz, Pin=+15dBm)
-20
-30
2fo
-40
-50
-60 -60
-40
-20
0
20
40
60
80
100
120
Temperature (oC)
- 13 -
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit
NF, Gain vs. VDD
Return Loss vs. VDD
(VCTL=1.8V, fRF=1575MHz)
3.0
18
17
RLo
Gain
15
1.5
NF 1.0
14
0.5
13
Gain (dB)
16
2.0
Return Loss (dB)
2.5
Noise Figure (dB)
(VCTL=1.8V, fRF=1575MHz)
20
15
10
RLi
5
(NF, Gain: Exclude PCB, Connector Losses)
0.0 1.0
1.5
2.0
2.5
3.5
12 4.0
0 1.0
2.5
3.0
3.5
4.0
Band Rejection vs. VDD
Group Delay Time Deviation vs. VDD
(VCTL=1.8V)
Group Delay Time Deviation (ns)
(VCTL=1.8V, fRF=1597~1606, 1559~1563.2, 1559~1591MHz) 12
915MHz 50
2400MHz
40
1980MHz
30
1.5
2.0
2.5
3.0
3.5
8
6
BeiDou 4
(1559~1563.2MHz)
2
GLONASS (1597~1606MHz)
1.5
2.0
2.5
3.0
3.5
4.0
VDD (V)
vs. V
DD DD (VCTL=1.8V/0V, RF OFF)
6
(1559~1591MHz)
0.6
0.5
5
0.4
4
IDD (Active Mode)
3
0.3
2
0.2
1
IDD
0.1
IDD (µ µ A) @Standby Mode
I
Galileo 10
0 1.0
4.0
VDD (V)
IDD (mA) @Active Mode
2.0
VDD (V)
60
20 1.0
1.5
VDD (V)
70
Band Rejection (dBc)
3.0
(Standby Mode)
0 1.0
1.5
2.0
2.5
3.0
3.5
0.0 4.0
VDD (V)
- 14 -
NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50Ω, with application circuit (VCTL=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm)
18
-8
16
4
-10
14
2
-12
P-1dB(IN)
-14
12
0
OIP3
10
-2
-16
8
-4
-18
6
-20 1.0
1.5
2.0
2.5
3.0
3.5
4 1.0
4.0
1.5
2.0
2.5
3.0
3.5
VDD (V)
Out-of-band IIP2 vs. VDD
Out-of-band IIP3 vs. VDD
IIP2_OB 80
70
60
1.5
2.0
2.5
3.0
3.5
4.0
VDD (V)
-8 4.0
(VCTL=1.8V, fmeas=1575MHz, f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm) 80
Out-of-band IIP3 (dBm)
90
50 1.0
-6
IIP3
VDD (V) (VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm) 100
Out-of-band IIP2 (dBm)
6
IIP3 (dBm)
OIP3, IIP3 vs. VDD
(VCTL=1.8V, fRF=1575MHz)
OIP3 (dBm)
P-1dB(IN) (dBm)
-6
P-1dB(IN) vs. VDD
70
60
IIP3_OB 50
40
30 1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDD (V)
2nd Harmonics vs. VDD (VCTL=1.8V, fmeas=1575.52MHz, fin=787.76MHz, Pin=+15dBm)
2nd Harmonics (dBm)
-10
-20
-30
2fo
-40
-50
-60 1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDD (V)
- 15 -
NJG1159PHH I Application circuit (Top View) 1 pin index GND
VDD
VDD
1
9
LNAOUT
RF OUT
8
C1 1000pF
VCTL
LNAIN
2
7 LNA
VCTL GND
Pre-Filter
3
PreOUT
6 L1
PreIN
GND
13nH
RF IN 4
10
5
GND
Parts list Parts ID
Manufacture
L1
LQW15AN_00 Series (MURATA)
C1
GRM03 Series (MURATA)
- 16 -
NJG1159PHH I Evaluation board (Top View)
VCTL
VDD PCB Substrate: FR-4 Thickness: 0.2mm Microstrip line width: 0.4mm (Z0=50Ω) Size: 14.0mm x 14.0mm
C1 1 pin index
RF IN
RF OUT L1
PCB PKG Terminal PKG Outline GND Via Hole Diameter φ= 0.2mm
PRECAUTIONS • Please layout ground pattern under this FEM in order not to couple with RFIN and RFOUT terminal. • All external parts should be placed as close as possible to the FEM. • For good RF performance, all GND terminals must be connected to PCB ground plane of substrate, and via-holes for GND should be placed near the FEM.
- 17 -
NJG1159PHH ■ RECOMMENDED FOOTPRINT PATTERN (HFFP10-HH Package) PKG : 1.5mm x 1.1mm Pin pitch : 0.39mm
: Land : Mask (Open area) *Metal mask thickness : 100µm : Resist(Open area)
- 18 -
NJG1159PHH I NOISE FIGURE MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent N8973A Noise Source
: Agilent 346A
Setting the NF analyzer Measurement mode form Device under test
: Amplifier
System downconverter : off Mode setup form Sideband
: LSB
Averages
: 16
Average mode
: Point
Bandwidth
: 4MHz
Loss comp
: off
Tcold
: setting the temperature of noise source (303.15K) NF Analyzer (Agilent N8973A) Preamplifier NJG1145UA2 Gain 15dB NF 1.5dB
Noise Source (Agilent 346A)
* Preamplifier is used to improve NF Input (50Ω)
Noise Source Drive Output
measurement accuracy. * Noise source, preamplifier and NF analyzer are connected directly.
Calibration setup NF Analyzer (Agilent N8973A) Preamplifier NJG1145UA2 Gain 15dB NF 1.5dB
Noise Source (Agilent 346A)
* Noise source, DUT, preamplifier IN
DUT
OUT
Input (50Ω)
Noise Source Drive Output
and NF analyzer are connected directly.
Measurement Setup
- 19 -
NJG1159PHH I Package outline (HFFP10-HH) TOP VIEW
SIDE VIEW
1pin index
SIDE VIEW
Electrode Dimensions clearance : ±0.05mm BOTTOM VIEW
Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country.
Unit Substrate Terminal treat Lid Weight (typ.)
: mm : Ceramic : Au : SnAg/Kovar/Ni : 4.9mg
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. This product is hollow seal package type, and it is with the structure susceptible to stress from the outside. Therefore, note the following in relation to the contents, after conducting an evaluation, please use. 1. After mounting this product, to implement the potting and transfer molding, please the confirmation of resistance to temperature changes and shrinkage stress involved in the molding. 2. When mounted on the product, collet diameter please use more than 1mmφ. In addition, the value of static load is recommended mounting less than 5N. 3. For dynamic load at the time of mounting, please use it after confirming in consideration of the contact area / speed / load.
- 20 -
