Introduction/Glossary of Terms

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Introduction

Glossary of Terms

GPD Optoelectronics manufactures a broad range of Ge and InGaAs photodetectors to meet the most demanding military and commercial applications. This brochure contains technical specifications for Ge, dual (Si/Ge) detectors, and TE cooled Ge photodiodes.

DARK CURRENT (ID)

Custom devices and packages are also available.

Responsivity vs. Wavelength Comparison 1

(A/W) Responsivity

SHUNT RESISTANCE (RSH) The resistance of a photodetector at or near zero bias; shunt resistance values in this catalog are calculated at 10mV reverse bias. MAXIMUM REVERSE VOLTAGE (VRM) The maximum reverse voltage that may be applied without damaging the detector.

Germanium

Silicon

The current through a photodetector when a specified reverse bias is applied under conditions of no incident radiation.

RESPONSIVITY (R) The photocurrent output per unit incident radiant power, usually at a specified wavelength.

0.1 InGaAs

NOISE EQUIVALENT POWER (NEP) 0.01 400

600

800

1000

Wavelength

1200

1400

1600

1800

(nanometers)

The incident radiant power that creates a signal­ to-noise ratio of one at the photodetector output. JUNCTION CAPACITANCE (CJ)

Both Germanium and InGaAs are sensitive to light in the near-infrared region of the spec­ trum. While InGaAs detectors offer better noise performance, Ge detectors offer better linearity and cost advantages, particularly where a large detection area is required.

The total device capacitance, usually measured at a specified reverse bias and frequency. CUTOFF FREQUENCY (fc) The frequency at which the responsivity de­ creases by 3 dB from the DC responsivity value. It can be calculated from the load resistance and the junction capacitance. fc = 1/(2πRLCJ)

Table of Contents Glossary of Terms Operating Circuits Ge pn Detectors Two-color Detector Package Outline Drawings

2 3 4-5 6 7-12

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Operating Circuits

Vo

Vo

Vo:

Output Voltage (Is X Rf)

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Ge Photodiodes TE Cooled Photodiodes

TYPE

GM2 GM2HS GM2VHS GM2VHR

ACTIVE DIA. (mm.)

SHUNT RES. @ Vr=10mV (KΩ) MIN. TYP.

DARK CURRENT @ Vr=Vtest (µA MAX)

TEST REVERSE BIAS (Volts)

MAX REVERSE VOLTS

CAPACITANCE @Vr MAX (pF)

NEP (pW/ √Hz)

CUT-OFF FREQ. @Vr, 50ΩRL (MHz)

0.5 SQ

30 100 250 550

60 150 350 900

2.0 1.0 0.7 0.5

10 3.0 0.3 0.3

15 5.0 0.5 0.5

27 110 300 300

1.0 0.3 0.2 0.1

120 30 10 10

0.1

120 350 1500 2000

180 500 2500 3000

1.0 0.3 0.1 0.1

10 3.0 0.3 0.3

15 5.0 0.5 0.5

1 6 21 21

0.3 0.1 0.1 0.1

3000 500 150 150

0.3

60 250 400 900

80 400 650 1600

1.5 0.4 0.2 0.2

10 3.0 0.3 0.3

15 5.0 0.5 0.5

10 50 200 200

0.6 0.3 0.2 0.15

300 60 16 16

1.0

20 60 200 330

40 100 280 450

3.0 1.5 0.5 0.5

10 2.0 0.3 0.3

15 3.0 0.5 0.5

85 300 1450 1450

1.5 0.5 0.3 0.3

35 10 2.0 2.0

2.0

6 30 80 120

12 60 120 200

10 3.0 1.0 1.0

10 2.0 0.3 0.3

15 3.0 0.5 0.5

300 1200 9000 9000

2.0 0.8 0.4 0.4

17 1.0 0.6 0.6

3.0

4 25 40 65

8 35 65 90

30 4.0 3.0 2.0

5.0 1.0 0.25 0.25

10 3.0 0.5 0.5

800 4000 13000 13000

3.0 1.0 0.6 0.6

4.0 0.7 0.2 0.2

GM8 GM8HS GM8VHS GM8VHR

5.0

2 10 15 20

4 15 20 30

40 15 5 5

3.0 1.0 0.1 0.1

5.0 3.0 0.3 0.3

3000 6000 35000 35000

4.0 2.0 1.0 1.0

1.6 0.5 0.1 0.1

GM10HS

10 SQ.

2.0

3.5

50

0.5

1.0

30000

4.0

0.1

GM13HS

13

1.0

2.0

100

0.5

1.0

50000

8.0

0.05

GM5TEC1

1.0

300

0.2

5.0

7.0

85

0.4

55

GM8TEC2

5.0

60

1.0

1.0

2.0

3000

1.0

1.6

GM3 GM3HS GM3VHS GM3VHR GM4 GM4HS GM4VHS GM4VHR GM5 GM5HS GM5VHS GM5VHR GM6 GM6HS GM6VHS GM6VHR GM7 GM7HS GM7VHS GM7VHR

VHS series: VHR series: HS series: GM series: TEC series:

Designed for zero reverse bias applications requiring high shunt resistance. Designed for zero reverse bias applications. Designed for < 5V reverse bias applications. Designed for high speed applications with reverse bias > 10V. Mounted on a one- or two-stage thermoelectric cooler for low-noise applications.

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Ge Photodiodes

Electrical Specifications

Optical Specifications Responsivity vs. Wavelength WAVELENGTH

Dark Current vs. Reverse Bias

Dark Current (A)

100

GM8

Series

1300

1550

min.

typ.

min.

typ.

min.

typ.

GM

.20

.26

.60

.65

.75

.85

GMHS

.20

.26

.60

.70

.75

.85

GMVHS

.20

.26

.60

.70

.80

.85

GMVHR

.26

.32

.70

.80

.82

.87

GM7

10

850

GM6

GM5

1

0.1 0.01

0.1

1

10

Reverse Bias (V)

Linearity of Response

Uniformity of Response

Photocurrent (mA)

25

20

15

10

5

0 0

5

10

15

20

25

30

Input Power (mW)

Relative Shunt Resistance

Shunt Resistance vs. Temperature

Responsivity of Filtered Units

1000

100

10

1

0.1

0.01 -60

-40

-20

0

20

40

60

80

T e m p e r a t u r e (°C )

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Relative Capacitance (%)

Two-Color Photodiodes

Capacitance vs. Reverse Bias

Special Options • High response at short wavelength available • BNC connectors • Thermoelectric coolers (1- and 2-stage) • Neutral density filters • Bandpass Filters • AR-coated lenses/windows • Custom devices including arrays • Calibrated spectral response

100 GM series HS series

80

60

40

20

0 -2

0

2

4

6

8

10

12

Reverse Bias (V)

Si/Ge TWO-COLOR DETECTOR: ELECTRICAL SPECIFICATIONS Type (Si) GM6Si5 (Ge) (Si) GM7Si5 (Ge) (Si) GM8Si5 (Ge)

Active Diam. (mm)

Wavelength Range (nm)

Peak Resp. (A/W)

NEP (pW/√ Hz)

RSHUNT (KΩ )

Max Reverse Volts (V)

Leakage Current

Forward Voltage (V) IPH=10mA

5

400-1000

0.5

1.0x10-14

> 1000

30

2 nA

1.1

2

1000-1800

0.6

1.0x10-12

60

3

2 µA

0.45

5

400-1000

0.5

1.0x10-14

> 1000

30

2 nA

1.1

3

1000-1800

0.6

1.5x10-12

25

3

3µA

0.45

5

400-1000

0.5

1.0x10-14

> 1000

30

2 nA

1.1

5

1000-1800

0.6

2.0x10-12

10

1.5

10µA

0.45

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Package Drawings Dimensions in mm (in.) Many other packages (including lensed packages) available.

TO-18 (Chip Diameter to 1 mm)

TO-5 (Chip Diameter to 3 mm)

TO-8 (5 mm chip)

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Package Drawings Dimensions in mm (in.) Many other packages (including lensed packages) available.

TO-9 (Chip Diameter to 13 mm)

TO-18 with lens cap (Chip Diameter to 1 mm)

TO-5 with lens cap (Chip Diameter to 3 mm)

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Package Drawings

Dimensions in mm (in.) Many other packages (including lensed packages) available.

TO-5 with TEC (Chip Diameter to 3 mm)

TO-8 with TEC (Chip Diameter to 5 mm)

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Package Drawings

GM8HSCS

GM10HSCS

GM10BNC

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Package Drawings

FC Active Mount

0614

SC Active Mount

ST Active Mount

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Package Drawings Dimensions in mm (in.) Many other packages (including lensed packages) available.

Si/Ge Two-color Detector

Fiber-pigtailed Detector

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