AMT2175013 Preliminary Data Sheet Rev. 1.0 January 2008
0.5-26 GHz Wideband Amplifier Features
Frequency Range : 0.5 - 26.0GHz 11dB Nominal gain Mid-band Noise Figure < 3dB Input Return Loss > 10 dB Output Return Loss > 13 dB DC decoupled input and output 0.15 µm InGaAs pHEMT Technology Chip dimension: 3.0 x 1.2 x 0.1 mm
Functional Diagram Vd
Vg2
RF out
RF in
Vg1
Typical Applications Wideband LNA/Gain block Electronic warfare Test Instrumentation
Description The AMT2175013 is a broadband pHEMT GaAs MMIC TWA designed to operate over 0.5 to 26 GHz frequency range. The design employs 4 cascode pHEMT cells in a distributed amplifier topology, to ensure larger bandwidth, flat gain and good return losses. The device offers a typical small signal gain of 11 dB over the operating frequency band and has a Noise figure less than 4.5 dB in 1-20GHz band. The Input & output are matched to 50Ω with a VSWR better than 1.7:1. The chip is unconditionally stable over the entire operating frequency range. The AMT2175013 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, jammers and instrumentation. In addition, the chip may also be used as a gain block.
Absolute Maximum Ratings(1) Parameter Positive DC voltage RF input power Supply Current Storage Temperature Operating Temperature
Absolute Maximum +8 +16 150 -55 to +150 -40 to +85
Units V dBm mA o C o C
1. Operation beyond these limits may cause permanent damage to the component
Astra Microwave Products Limited, Hyderabad, INDIA Phone: +91-40-30618000 Email:
[email protected] Fax: +91-40-30618048 URL: www.astramtl.com
AMT2175013 Preliminary Data Sheet Rev. 1.0 January 2008
Electrical Specifications (1) @ TA = 25 oC, Zo =50Ω; Vd = 5.0V, Vg2 = 2.0V Vg1 =-0.28V Parameter
Min.
Typ.
Max.
Units
0.5
–
26.0
GHz
Gain
-
11
-
dB
Gain Flatness
–
± 0.75
–
dB
Noise Figure (mid-band)
-
2.5
-
dB
Input Return Loss
-
10
–
dB
Output Return Loss
-
12
–
dB
Output Power (P1 dB)
–
5
–
dBm
Third Order Intercept point
–
14
–
dBm
Supply Current(2)
–
46
65
mA
Frequency Range
Note: 1. Electrical specifications mentioned above are measured in a test fixture. 2. For optimal performance, the gate voltage Vg1 should be tuned to achieve a drain current of 46 mA (typ.). 3. The negative gate supply (Vg1) can be tuned from 0V to -0.3V. 4. By varying the Vg1, the gain & current can be controlled to the user requirements.
Astra Microwave Products Limited, Hyderabad, INDIA Phone: +91-40-30618000 Email:
[email protected] Fax: +91-40-30618048 URL: www.astramtl.com
AMT2175013 Preliminary Data Sheet Rev. 1.0 January 2008
Test fixture data
Vd= +5.0V, Vg2=+2.0V & Vg1 = -0.28V, Current =46 mA, TA = 25 oC
Gain 18 16 14
Gain (dB)
12 10 8 6 4 2 0 0
2
4
6
8
10
12 14 16 Frequency (GHz)
18
20
22
24
26
18
20
22
24
26
Return losses
0
-5
RL (dB)
-10
S22
-15
-20 S11
-25
-30
-35 0
2
4
6
8
10
12
14
16
Frequency (GHz)
Astra Microwave Products Limited, Hyderabad, INDIA Phone: +91-40-30618000 Email:
[email protected] Fax: +91-40-30618048 URL: www.astramtl.com
AMT2175013 Preliminary Data Sheet Rev. 1.0 January 2008
Test fixture data
Vd= +5.0V, Vg2=+2.0V & Vg1 = -0.28V, Current =46 mA, TA = 25 oC
Isolation
0 -10 -20
Iso (dB)
-30 -40 -50 -60 -70 -80 0
2
4
6
8
10
12 14 16 18 Frequency (GHz)
20
22
24
26
28
Noise Figure 8 7 6
NF (dB)
5 4 3 2 1 0 1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz)
Astra Microwave Products Limited, Hyderabad, INDIA Phone: +91-40-30618000 Email:
[email protected] Fax: +91-40-30618048 URL: www.astramtl.com
AMT2175013 Preliminary Data Sheet Rev. 1.0 January 2008
1.49 [0.059]
0.30 [0.012]
Mechanical Characteristics
1.20 [0.047] 3
4
5
6
GND
Vd
Vg2
GND
GND
9
GND
1 RF IN GND
Vg1 GND
11 10
2.55 [0.100]
12
3.00 [0.118]
0.40 [0.016]
0.89 [0.035]
RF OUT 8 GND
2
7
Units: millimeters (inches) Note: 1. All RF and DC bond pads are 100µm x 100µm 2. Pad no. 1 : RF In 3. Pad no. 4 : Vd 4. Pad no. 5 : Vg2 5. Pad no. 8 : RF out 6. Pad no. 11 : Vg1
Astra Microwave Products Limited, Hyderabad, INDIA Phone: +91-40-30618000 Email:
[email protected] Fax: +91-40-30618048 URL: www.astramtl.com
AMT2175013 Preliminary Data Sheet Rev. 1.0 January 2008
Recommended Assembly Diagram
Vd
Vg2
100 pF
100 pF
3
4
Vd GND
50ohm Line
2
GND
1
RF_IN
12
GND
5
50ohm Line
6
GND
Vg2 GND
7
RF_OUT
8
GND
9
Vg1
GND
11
10
100 pF
Vg1
Note: 1. Two 1 mil (0.0254mm) bond wires of minimum length should be used for RF input and output. 2. Input and output 50 ohm lines are on 5mil Alumina/RT Duroid substrate. 3. The supply voltages are Vd=5.0V, Vg2=+2.0V & Vg1=-0.28V. 4. 0.1 µF capacitors may be additionally used as a second level of bypass at the power supplies for reliable operation.
Die attach: For Epoxy attachment, use of a two-component conductive epoxy is recommended. An epoxy fillet should be visible around the total die periphery. If Eutectic attachment is preferred, use of fluxless AuSn (80/20) 1-2 mil thick preform solder is recommended. Use of AuGe preform should be strictly avoided. Wire bonding: For DC pad connections use either ball or wedge bonds. For best RF performance, use of 150 - 200µm length of wedge bonds is advised. Single Ball bonds of 250-300µm though acceptable, may cause a deviation in RF performance.
GaAs MMIC devices are susceptible to Electrostatic discharge. Proper precautions should be observed during handling, assembly & testing All information and Specifications are subject to change without prior notice Astra Microwave Products Limited, Hyderabad, INDIA Phone: +91-40-30618000 Email:
[email protected] Fax: +91-40-30618048 URL: www.astramtl.com
