Fujitsu 90nm Technology Introduction Fujitsu Limited. 2005.08
Leading-edge Technology
Fujitsu 90nm
Fujitsu Advanced Technology
1
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Leading-edge Technology
Fujitsu 90nm
Fujitsu CMOS Technology Roadmap
Physical Gate Length (nm)
1000 180-nm 180-nm
500 200
130-nm 130-nm
90-nm 90-nm
65-nm 65-nm
45-nm 45-nm
CS80 / 80A CS90A
100
CS100/CS100A (90nm) L actual=40-80nm SiOC(k:2.9) low-k Dual Damascene Cu
CS100A CS200A
CS90
50 CS100HP
20 10 1998 2000
CS200
2002
2004
2006
2008
CS200/CS200A (65nm) L actual=30-50nm NCS (Nano-Clustering Silica) 2010
Year (Production Start) 2
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Operating Frequency
90nm Technology Lineup
CS100HP High-End MPU
CS100A_LL Mobile
CS100A_G*
Graphics
Network
Consumer
FPGA *Supply *Supply only only technology technology
Power Consumption Fujitsu Proprietary and Confidential
4
Leading-edge Technology
Fujitsu 90nm
Proven track records of 90nm complex design and products (1) - In House Application -
3
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Leading-edge Technology
Fujitsu 90nm
Proven track records of 90nm complex design and products (2) - COT Customers Chip Size (mm2)
High performance products ¾ PC CPU (Transmeta) ¾ Large scale FPGA (Lattice) etc Low power products ¾ Multimedia Processor ¾ Digital AV product etc
High End
350-450
Low Power
250-350 200-250 100-200 50-100 20-50 0
5 10 Tape Out Number
30 30 Product Product Taped Taped Out Out 200 200prototype prototypewafers wafersdelivered delivered 4
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Leading-edge Technology
Fujitsu 90nm
Fujitsu 90nm - Key Features
High Performance Transistors
Advanced Lithography and Etch technology to achieve 40nm Gate Length
Low Temperature Process for Shallow Junction
Process Optimization for High Carrier Mobility
High density 6T SRAM
sub-1um2 cell is available
*Dual Damascene Cu + Full Low-k
*Assy and packaging technology
Full Low-K + Pb free bump + Large pin count + Large die size**
* High performance and high reliability. ** This combination can realize by only Fujitsu in the world. 5
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Leading-edge Technology
Fujitsu 90nm
Ultra-Thin Gate Insulator / Mobility Improvement
1nm-thick Gate Oxide Normalized gm (∝ mobility)
Poly-Si
Surface Cleaning 2.0E-3
40% increase
1.5E-3
Nitrided-SiO2
After optimize
1.0E-3
5.0E-4
Si substrate
Before 0.0 -0.5
1.5
3.5
5.5
Electric Field [MV/cm]
6
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Leading-edge Technology
Fujitsu 90nm
Advantage of Fujitsu 90nm technology Fujitsu is the World’s No.1 Leading Edge Process Technology Supplier
One customer’s benchmark results show Fujitsu’s technology has higher performance and low power consumption compared with one of the standard foundry technologies
Speed and Power Comparison
Foundry A
Fujitsu
Speed
100
125
Active Power
100
75
Stand-by Power
100
21
7
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Leading-edge Technology
90nm LL Transistor Benchmark
Fujitsu 90nm
* for nMOS transistor
100
UHS
Standby Current
small
Ioff(nA/um)
big
10
HS
1
Foundry A
Low-Vt
90LP, 1.2V
0.1
CS100A_LL, 1.2V Std-Vt
0.01
Fujitsu
STD LL
Hi-Vt 0.001 0
200
400
600
800
1000
Ion(nA/um) slow
Switching Speed
fast
CS100A_LL process covers a broad range of requirement for both high performance and low leakage current.
8
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Leading-edge Technology
Fujitsu 90nm
Power/Delay estimation result Assumption Logic : 1.7Mgate, SRAM : 8Mbit Assumption 400 Delay Time
500
350
400
300
300
250
Delay Time [psec]
600
POWER [mW]
・Logic : 1.7Mgate, SRAM : 8Mbit
200
200 Stand-By power Operation power
100 0
・Delay time: Tj=25℃, VDD=1.2V, Process Typical ■Active power is dominant for total power consumption. Roughly half of 130nm node with 90nm node.
150
■Total power benefit by evolution.
100
■Excess Low Leak targeting costs delay time penalty.
ＣＳ９０Ａ CS100A A-company 130nm node
・Power: Tj =85℃, VDD=1.3V, Process Typical
90nm node
9
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Leading-edge Technology
Fujitsu 90nm
Cu/Low-k Integration Technology Fourth-generation Cu wiring LSI Leading-edge Low-k technology
Wiring Pitch (um)
1.0
0.5 0.4 0.3 0.2
0.1
CS80 *Cu-6 Layer *FSG(k=3.6)
0.18um
CS90A *Cu-7 Layer *Partial Low-k
0.13um
CS100/100A *Cu-10 Layer *Full Low-k
90nm
CS200/201 *Cu-11 Layer *Full Advanced Low-k
65nm
Technology Node 10
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Leading-edge Technology
Fujitsu 90nm
6T SRAM Cell
1.88
4.18um2
1.40
1.20
1.65
2.22
Conventional Type:Symmetrical Type: For Bigger size Verified
(um)
1.20
0.95
0.655
1.98um2
1.14um2
0.917um2
16 - 512Kbit
32K - 8Mbit
11
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Leading-edge Technology
Fujitsu 90nm
90/65nm 300mm New Fab.
Outlook of new fab.
Mie New Fab. Milestone
World first semiconductor fab. with a micro vibration control & seismically isolated structure
Apr. 21, 2004 Ceremony for sanctifying ground
Nov. 20, 2004 Completion of construction
Apr. 1, 2005 Formal operation starts
Sept. 9, 2005 Volume shipment
鉛プラグ （径φ120∼φ150）
積層ゴム
ベースポット
すべり面（テフロン加工）
内部ゴム（基礎の回転角を吸収） ベース （ベースポットにはめ込み式）
１FL
すべり板
12
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Leading-edge Technology
Fujitsu 90nm
300mm foundry capacity for 90nm/65nm Mie Mie 300 300 mm mm Fab Fab Advanced Advanced technology technology production production 2005/2H~ 2005/2H~
Akiruno Akiruno TC TC 200mm 200mm Advanced Advanced technology technology development development and and production production
300mm Fab Akiruno TC
30000
15000
10000 20000
5000 10000
Capacity (300mm/month)
Capacity (200mm/month)
40000
0 2004/2H
2005/1H 2005/2H
2006/1H
2006/2H 2007/1H
2007/2H
Year 13
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Leading-edge Technology
Fujitsu 90nm
Extensive IP line up
Customers are satisfied with the Si verified IP. Fujitsu provide extensive IP line up.
High Speed I/O STD I/O
SRAM
I/F (USB 2.0 etc) PLL
AD/DA
* Chip photo is not related on each IP. 14
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Fujitsu Foundry Services
15
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Fujitsu launched pure foundry business Fujitsu announced “ Fujitsu launched pure foundry business as primary to keep pace with market shift from ASIC to foundry . Fujitsu made foundry business division to focus the foundry business in 2004 June.
This advertisement is published in “Nikkei electronics 2004 12-6, page 100-101” , which is one of the major magazine of electronics in Japan. In 2005 April, Fujitsu has released the similar advertisement in U.S.A.
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Changing Business Environment Customers’ needs are changing with evolution in LSI development Customers Customers require require integrated integrated design design and and engineering engineering and and flexible flexible manufacturing manufacturing capabilities capabilities
Strong Appeal as New IDM Vendor System System Design Design
System System Design Design
Logic Logic Design Design
Logic Logic Design Design
Physical Physical Design Design
Foundry Foundry
SoC SoC
ASIC ASIC Manufacturing Manufacturing Technology Technology
New business opportunity
Fujitsu’s conventional LSI business
(Technology & Engineering Service) 17
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Full Turnkey Foundry Service option Customer can select service and biz model. Wafer process
Sort test
Sort test Wafer process
Packaging
Packaging
Mask making
Mask making
Lsi Test
Lsi Test
Backend Design Service Turnkey Foundry Service
Traditional Foundry Service 18
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EDG in Japan FIM (Miyagi) Assembling
Iwate Plant [Memory, Microcomputer, Logic]
FIM (Aizu) Assembling & Test
Akiruno TC (Tokyo) R&D (90nm∼)
Aizu Wakamatsu Plant
FIM (Gifu) Assembling & Test
*:300mm FAB 90nm/65nm
FIM (Kagoshima) Assembling & Test
FIM : Fujitsu Integrated Microtechnology
Mie Plant
19
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SiExpressTM SiExpressTM is a pre-production service where customers save cost by sharing mask sets and wafer, called multi-projectwafer. SiExpressTM service provides completely consistent samples which enable your real product’s performance evaluation. Sample forms •Bare Chips •Package chips 20
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Fab information system ~FF -eSERVE ~FF-eSERVE FJ-WAN
Secured accessibility for world wide customers
Iwate
Wakamatsu Akiruno Mie
Fire wall
FJ foundry
Internet
Fire wall
Customers can access FJ foundry information through the Internet with high security 21
World wide customers
All Rights Reserved, Copyright FUJITSU LIMITED 2005
Fab information linked customer’s PO
FF -eSERVE FF-eSERVE
Received Received PO PO
The fab information system of your own
•• Engineering Engineering docs docs Query
•• Lot Lot history history •• Daily Daily WIP WIP •• Inprocess Inprocess data data •• WAT WAT data data •• SORT SORT data data •• Wafer Wafer Map Map •• Wafer Wafer Shipping Shipping info info •• Assembly Assembly WIP WIP •• LSI LSI Shipping Shipping info info
Info
Customer
Customers can get FJ foundry information linked PO 22
All Rights Reserved, Copyright FUJITSU LIMITED 2005
Why Fujitsu foundry? Fujitsu launched foundry biz. Provide 300mm capacity for “Foundry Customer” Customer can enjoy the Fujitsu’s high performance and low leakage 90nm technology. Matured 90nm device production From high end to low power devices Higher yield than other fab. Extensive IP line up
23
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Leading-edge Technology
Fujitsu 90nm
EDA tool vendor’s support
Cadence Foundry Program http://www.cadence.com/partners/foundry _program/index.aspx?lid=foundries
Synopsys SPV Cafe http://www.synopsys.com/cgi-bin/svp/lib/svp.cgi
24
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Standard Cell 1. Standard cell 1-1. CS100A_LL Tr.
LL
STD
HS
9grid
Now
Now
Now
12grid
Now
Now
Now
HiVT
STD
HS
3Q / 2005
3Q / 2005
NA
Cell Height
1-2. CS100HP Tr. Cell Height 9grid
LL : Low-Leak Tr. , STD : Standard Tr. , HS : High-Speed Tr. , HiVT : High-Vth Tr.
Fujitsu Proprietary and Confidential
2
I/O Cell 2. I/O cell 2-1. CS100A_LL Interface
Status
Note
3.3V LVCMOS
Now
(63cells)
for 3.3V Process
3.3V PCI
Now
( 5cells , 66/33MHz)
for 3.3V Process
SSTL-2
Now
( 5cells , 400Mbps)
for 3.3V Process
LVDS
4Q / 2005
( 5cells , 333MHz)
for 3.3V Process
2-2. CS100HP Interface 2.5V LVCMOS
3Q / 2005
Fujitsu Proprietary and Confidential
Status
Note
( TBD )
for 2.5V Process
3
Memory 3. SRAM / ROM / Register File CS100A_LL Type
1RW SRAM 2RW SRAM ROM 1R1W Reg. File 2R2W Reg. File
Tr. Type ( Cell / Peripheral ) LL / LL LL / STD LL / HS LL / LL LL / STD LL / HS LL / LL LL / HS LL / LL LL / STD LL / HS LL / LL LL / STD LL / HS
CS100HP Status Now Now Now Now Now Now Now Now Now Now Now Now Now Now
Tr. Type ( Cell / Peripheral ) HiVT / HiVT HiVT / STD HiVT / HS HiVT / HiVT HiVT / STD HiVT / HS HiVT / HiVT HiVT / STD HiVT / HiVT HiVT / STD HiVT / HS HiVT / HiVT HiVT / STD HiVT / HS
Status On demand On demand On demand On demand Now *1 On demand On demand On demand On demand On demand On demand On demand On demand On demand
*1 : Virage’s IP LL : Low-Leak Tr. , STD : Standard Tr. , HS : High-Speed Tr. , HiVT : High-Vth Tr.
Fujitsu Proprietary and Confidential
4
I/F Macro, ARM I/F Macro Macro
Functions
Specifications
Design completion
Evaluation completion ( SiliconProven )
1
USB2.0 Device
USB2.0(HS) Device PHY
Now
2005/5/E
2005/8/E
Development
2
USB2.0 Host
USB2.0(HS) Host PHY
TBD
TBD
TBD
Development
3
USB2.0 OTG
USB2.0(HS) OTG PHY
Now
2005/7/E
2005/8/E
Procurement
4
IEEE1394.a
IEEE1394.a AV-protocol only (LINK + PHY)
Now
2005/6/E
2005/11/E
Development
S-ATA 1.5G Host PHY
2005.6.30(PHY)
2005.10.31(PHY)
2006.3.31(PHY)
Procurement
S-ATA 3.0G Host PHY
TBD
TBD
TBD
PCI-Express 2.5G Endpoint PHY
2005.5.31(PHY)
2005.10.31(PHY)
2006.3.31(PHY)
Development
DDR2 400～533Mbps x 32
2005/5/E
2005/6/B
2005/9/E
Development
DDR2 400～533Mbps x 16
2005/5/E
2005/8/B
2005/11/E
Development
DDR2 ～800Mbps x 16
2005/9/B
2006/4/B
2006/8/E
Development
UWB
TBD
TBD
TBD
Specifications
Design completion
5 6 7
S-ATA PCI-Express
8 9
DRAM Controller
10 11
UWB
Note (Procurement or Development)
TBD
Joint Development
ARM Macro 1 2 3 4
ARM
Functions ARM7TDMI-S
Now
ARM926EJ-S
Now
ARM946E-S
Now
ARM1176JZF-S
Now
Fujitsu Proprietary and Confidential
Evaluation completion ( SiliconProven )
Note (Procurement or Development)
We will deliver the library two months after the business fixation.
5
PLL, DLL Macro
Functions
Specifications
Design completion
Evaluation completion ( SiliconProven )
Note (Procurement or Development)
1
Fout:100-150MHz, Fin:12.5-150MHz, N=1-8, Power:1mW
NOW
NOW
NOW
Development
2
Fout:150-200MHz, Fin:10-200MHz, N=1-15, Power:1mW
NOW
NOW
NOW
Development
3
Fout:200-230MHz, Fin:10-200MHz, N=1-16, Power:1mW
NOW
NOW
NOW
Development
4
Fout:100-300MHz, Fin:8-150MHz, N=2-38, Power:3mW
NOW
NOW
NOW
Development
5
Fout:250-600MHz, Fin:8-200MHz, N=2-66, Power:4mW
NOW
NOW
NOW
Development
6
Fout:400-800MHz, Fin:10-50MHz, N=12-40, Power:6mW
NOW
NOW
NOW
Development
7
Fout:500-900MHz, Fin:6.25-150MHz, N=6-96, Power:6mW
NOW
NOW
NOW
Development
8
Fout:600-1200MHz, Fin:6-80MHz, N=6-80, Power:7mW
NOW
NOW
NOW
Development
Fout:20-32MHz, Fin:0.3-50MHz, N=30-66, Power:4mW
2005/6/E
2005/6/E
2005/11/E
Development
10
Fout:50-62MHz, Fin:0.3-50MHz, N=12-66, Power:4mW
2005/6/E
2005/6/E
2005/11/E
Development
11
Fout:90-150MHz, Fin:1.5-50MHz, N=32-66, Power:4mW
2005/6/E
2005/6/E
2005/11/E
Development
12
Fout:1200-1500MHz, Fin:24-100MHz, Power:10mW
2005/12/E
2005/12/E
2006/3/E
Development
13
Fout:1500-1800MHz, Fin:24-200MHz, Power:12mW
2005/12/E
2005/12/E
2006/3/E
Development
14
Fout:24.576MHz, Fin:24KHz, N=1024, Power:10mW (High Multiply)
2005/6/E
2005/7/E
2005/12/E
Development
15
Fout:150-300MHz, Fin:18.75-37.5MHz, N=8, Power:15mW (SSCG) (The available Fout[MHz]/Fin[MHz] pair is only five cases or 150/18.75,192/24,200/25,266/33.25,300/37.5)
2005/8/E
2005/8/E
2005/9/E
Development
Specifications
Design completion
Evaluation completion ( SiliconProven )
NOW
Ｎｏｗ
Ｎｏｗ
9
PLL
*Analog Capacitor is 3.3V Poly-Diffusion capacitor. Macro 1 DLL(Analog)
Functions Number of TAP:16, DQS≦133MHz, Power:10mW *Analog Capacitor is 3.3V Poly-Diffusion capacitor.
Fujitsu Proprietary and Confidential
6
Note (Procurement or Development) Development
ADC, DAC Macro
Functions
Specifications Design completion
Evaluation completion Note ( SiliconProven ) (Procurement or Development)
Note VDD=3.3V(typ)
1
10bit 1MS/s
now
now
now
Development
Planning of Improvement Now Designing (with Input ｓｗ)
2
10bit 1MS/s
now
now
2005.9.E
Development
With 17ch Input Switch
3
12bit 1MS/s
2005.7.E
2005.8.E
2005.12.E
Development
Single Input
4
ＡＤＣ 6bit 108MS/s
now
now
2005.7.E
Development
Single Input
5
8bit 54MS/s
now
now
2005.7.E
Development
Single Input
6
10bit 30MS/s
now
now
2005.11.E
Development
Single Input
7
１0bit 80MS/s
now
now
2005.10.E
Development
FMSL Differential Input
8
10bit 150MS/s
2005.7.E
2005.9.E
2006.1.E
Development
FMSL Differential Input
9
8bit 300kHz
now
now
now
Development
Voltage Output Low Power
10
8bit 1MHz
now
now
2005.7.E
Development
Voltage Output
11
10bit 300kHz
now
now
2005.7.E
Development
Voltage Output Low Power
12
10bit 1MHz
now
now
2005.7.E
Development
Voltage Output
13 ＤＡＣ １0bit 30MHz
now
now
now
Development
Current Output VDD=2.5V
14
１0bit 30MHz
now
now
2005.7.E
Development
Current Output With built-in resistance
15
１0bit 54MHz
now
now
2005.11.E
Development
Current Output
16
１0bit 110MHz
2005.10.E
2005.10.E
2006.1.E
Development
Current Output
Fujitsu Proprietary and Confidential
7
(End of Presentation)
Fujitsu Proprietary and Confidential
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