June 2009

FDV301N Digital FET , N-Channel General Description

Features

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOIC-16

SOT-223

Mark:301 INVERTER APPLICATION

Vcc

D D

OUT

IN

G

Absolute Maximum Ratings Symbol

G

S GND

S

TA = 25oC unless other wise noted

Parameter

FDV301N

Units

VDSS, VCC

Drain-Source Voltage, Power Supply Voltage

25

V

VGSS, VI

Gate-Source Voltage, VIN

8

V

ID, IO

Drain/Output Current

0.22

A

- Continuous

0.5 PD

Maximum Power Dissipation

TJ,TSTG

Operating and Storage Temperature Range

ESD

Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)

0.35

W

-55 to 150

°C

6.0

kV

357

°C/W

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

©2009 Fairchild Semiconductor Corporation

FDV301N Rev.F1

Inverter Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol

Parameter

Conditions

Max

Units

IO (off)

Zero Input Voltage Output Current

VCC = 20 V, VI = 0 V

1

µA

VI (off)

Input Voltage

VCC = 5 V, IO = 10 µA

0.5

V

VI (on) RO (on)

Min

VO = 0.3 V, IO = 0.005 A Output to Ground Resistance

Typ

1

VI = 2.7 V, IO = 0.2 A

V 4

5

Ω

Typ

Max

Units

Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol

Parameter

Conditions

Min

25

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

∆BVDSS/∆TJ

Breakdown Voltage Temp. Coefficient

ID = 250 µA, Referenced to 25 o C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate - Body Leakage Current

VGS = 8 V, VDS= 0 V

V

TJ = 55°C ON CHARACTERISTICS

mV / oC

25 1

µA

10

µA

100

nA

(Note)

∆VGS(th)/∆TJ

Gate Threshold Voltage Temp. Coefficient

ID = 250 µA, Referenced to 25 o C

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 2.7 V, ID = 0.2 A

mV / oC

-2.1 0.70

TJ =125°C VGS = 4.5 V, ID = 0.4 A

0.85

1.06

V

3.8

5

Ω

6.3

9

3.1

4

ID(ON)

On-State Drain Current

VGS = 2.7 V, VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V, ID= 0.4 A

0.2 0.2

A S

VDS = 10 V, VGS = 0 V, f = 1.0 MHz

9.5

pF

6

pF

1.3

pF

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

(Note)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω

VDS = 5 V, ID = 0.2 A, VGS = 4.5 V

3.2

8

ns

6

15

ns

3.5

8

ns

3.5

8

ns

0.49

0.7

nC

0.22

nC

0.07

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 0.29 A

(Note)

0.8

0.29

A

1.2

V

Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV301N Rev.F1

Typical Electrical Characteristics 1 .4

0 .5 GS

= 4.5V

4 .0 3 .5 3 .0

0 .4

R DS(on ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE

I D , DRAIN-SOURCE CURRENT (A)

V

2 .7 2 .5

0 .3

0 .2

2 .0

0 .1

1 .5

VGS = 2 .0V 1 .2

2 .5 2 .7

1

3 .0 3 .5 4 .0

0 .8

4 .5

0 .6

0 0

0 .5 V

DS

1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V)

2 .5

0

3

0 .4

0 .5

15

R DS(on) , ON-RESISTANCE (OHM)

1.8 R DS(ON) , NORMALIZED

0 .2 0 .3 I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

Figure 1. On-Region Characteristics.

DRAIN-SOURCE ON-RESISTANCE

0 .1

I D = 0.2A

1.6

VGS = 2.7 V

1.4 1.2 1 0.8

ID = 0.2A 12

25°C

125°C

9

6

3

0

0.6 -50

2

-25

0

25

50

75

100

125

2.5

150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

0.5

V GS = 0V 0.2 I S, REVERSE DRAIN CURRENT (A)

I D , DRAIN CURRENT (A)

125°C 0 .1 5

0 .1

0 .0 5

0 0 .5

1 V

GS

1 .5 2 , GATE TO SOURCE VOLTAGE (V)

4

Gate-To-Source Voltage.

T = -55°C J 25°C

V DS = 5.0V

3.5

Figure 4. On Resistance Variation with

with Temperature.

0 .2

3

V GS , GATE TO SOURCE VOLTAGE (V)

2 .5

TJ = 125°C

0.1

25°C 0.01

-55°C

0.001

0.0001 0.2

0.4 0.6 0.8 1 V , BODY DIODE FORW A RD VOLTAGE (V)

1.2

SD

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDV301N Rev.F1

Typical Electrical And Thermal Characteristics 30

VDS = 5V

I D = 0.2A

20

10V

4

15V CAPACITANCE (pF)

V GS , GATE-SOURCE VOLTAGE (V)

5

3

2

C iss

10

C oss

5 3 2

1

f = 1 MHz V GS = 0V

1 0 .1

0 0

0.1

0.2

0.3

0.4

0.5

C rss 0 .5 1 2 5 V , DRAIN TO SOURCE VOLTAGE (V) DS

0.6

10

25

Q g , GATE CHARGE (nC)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

1

5

( DS

ON

)L

IM

1m

IT

10

0m

s

1s

0 .1

10

0 .0 5

VGS = 2.7V

0 .0 2

RθJ A = 357 °C/ W TA = 25°C

s

3

2

DC

SINGLE PULSE

0 .0 1 0 .5

1 V

DS

SINGLE PULSE R θJA =357° C/W T A = 25°C

4

s POWER (W)

R

0 .2

D

I , DRAIN CURRENT (A)

0 .5

1

2 5 10 15 , DRAI N -SOURCE VOLTAGE (V)

25

35

0 0.001

0.01

0.1

1

10

100

300

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.5

D = 0.5

0.2

0 .2

0.1

0 .1

0.05 0.02 0.01 0.005

R θJA (t) = r(t) * R θJA R θJA = 357 °C/W

0 .05 P(pk)

0 .02 0.01

t1

Single Pulse

=P * R (t) A θJA Duty Cycle, D = t1 /t2

0.002 0.001 0.0001

t2

TJ - T

0.001

0.01

0.1 t1 , TIM E (sec)

1

10

100

300

Figure 11. Transient Thermal Response Curve.

FDV301N Rev.F1

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2.

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40

©2009 Fairchild Semiconductor Corporation FDV301N Rev.F1

3

www.fairchildsemi.com

®

tm