FDD6637 35V P-Channel PowerTrench MOSFET General Description

Features

This P-Channel MOSFET has been produced using

• –55 A, –35 V

Fairchild Semiconductor’s proprietary PowerTrench

RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.5 V

technology to deliver low Rdson and optimized Bvdss

• High performance trench technology for extremely

capability to offer superior performance benefit in the

low RDS(ON)

applications.

• RoHS Compliant

Applications •

Inverter

•

Power Supplies D

D G

G

S

D-PAK TO-252 (TO-252)

S

Absolute Maximum Ratings Symbol

T A =25 oC unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

VDS(Avalanche)

Drain-Source Avalanche Voltage (maximum)

VGSS

Gate-Source Voltage

ID

Continuous Drain Current

PD

Power Dissipation

TJ, TSTG

(Note 4)

Ratings

Units

–35

V

–40

V

±25

V A

@TC=25°C

(Note 3)

–55

@TA=25°C

(Note 1a)

–13

Pulsed

(Note 1a)

–100

@TC=25°C

(Note 3)

57

@TA=25°C

(Note 1a)

3.1

@TA=25°C

(Note 1b)

W

1.3

Operating and Storage Junction Temperature Range

–55 to +150

°C °C/W

Thermal Characteristics RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

2.2

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

96

Package Marking and Ordering Information Device Marking

Device

Package

Reel Size

Tape width

Quantity

FDD6637

FDD6637

D-PAK (TO-252)

13’’

12mm

2500 units

2006 Fairchild Semiconductor Corporation FDD6637 Rev C2(W)

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FDD6637 35V P-Channel PowerTrench MOSFET

August 2006

Symbol

Parameter

T A = 25°C unless otherwise noted

Test Conditions

Min

Typ

Max Units

Drain-Source Avalanche Ratings EAS IAS

Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current

VDD = -35 V, ID= -11 A, L=1mH

61

mJ

–14

A

Off Characteristics(Note 2) IDSS

Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current

VDS = –28 V,

IGSS

Gate–Body Leakage

VGS = ±25 V,

BVDSS

On Characteristics

VGS = 0 V,

ID = –250 µA

–35

V

VGS = 0 V VDS = 0 V

–1

µA

±100

nA

–3 11.6 18 19

mΩ

(Note 2)

VGS(th)

Gate Threshold Voltage

RDS(on)

Static Drain–Source On–Resistance

gFS

Forward Transconductance

VDS = VGS, ID = –250 µA VGS = –10 V, ID = –14 A VGS = –4.5 V, ID = –11 A VGS = –10 V, ID = –14 A, TJ=125°C VDS =–5 V, ID = –14 A

–1

–1.6 9.7 14.4 14.7 35

V

S

Dynamic Characteristics Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics

VDS = –20 V, f = 1.0 MHz

V GS = 0 V,

f = 1.0 MHz

2370

pF

470

pF

250

pF

3.6

Ω

(Note 2)

td(on)

Turn–On Delay Time

18

32

ns

tr

Turn–On Rise Time

VDD = –20 V,

ID = –1 A,

10

20

ns

td(off)

Turn–Off Delay Time

VGS = –10 V,

RGEN = 6 Ω

62

100

ns

tf

Turn–Off Fall Time

36

58

ns

Qg

Total Gate Charge, VGS = –10V

45

63

nC

Qg

Total Gate Charge, VGS = –5V

25

35

nC

Qgs

Gate–Source Charge

7

nC

Qgd

Gate–Drain Charge

10

nC

FDD6637 Rev. C2(W)

VDS = – 20 V, ID = –14 A

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FDD6637 35V P-Channel PowerTrench MOSFET

Electrical Characteristics

Symbol

Parameter

T A = 25°C unless otherwise noted

Test Conditions

Min

Typ

Max Units

–0.8

–1.2

Drain–Source Diode Characteristics VSD trr

Drain–Source Diode Forward Voltage Diode Reverse Recovery Time

Qrr

Diode Reverse Recovery Charge

VGS = 0 V, IS = –14 A IF = –14 A,

(Note 2)

diF/dt = 100 A/µs

V

28

ns

15

nC

Notes: 1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper

b) RθJA = 96°C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

PD R DS(ON)

where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.

FDD6637 Rev. C2(W)

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FDD6637 35V P-Channel PowerTrench MOSFET

Electrical Characteristics

100

2.4 -6.0V

VGS = -3.5V

-5.0V

NORMALIZED DRAIN-SOURCE ON-RESISTANCE

VGS = -10V

-4.5V -I D, DRAIN CURRENT (A)

80 -4.0V

60

-3.5V

40

20

-3.0V

0

1 2 3 -VD S, DRAIN-SOURCE VOLTAGE (V)

1.8 -4.0V

1.6

-4.5V -5.0V

1.4

-6.0V

1.2

-8.0V

-10V

1

4

0

Figure 1. On-Region Characteristics

20

40 60 -I D, DRAIN CURRENT (A)

80

100

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.05

1.8 ID = -14A V GS = -10V

I D = -7A R DS(ON), ON-RESISTANCE (OHM)

NORMALIZED DRAIN-SOURCE ON-RESISTANCE

2

0.8

0

1.6

1.4

1.2

1

0.8

0.6 -50

0.04

0.03 o

TA = 125 C 0.02 TA = 25o C 0.01

0

-25

0 25 50 75 100 o TJ , JUNCTION TEMPERATURE ( C)

125

150

2

Figure 3. On-Resistance Variation with Temperature

4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000

100

VGS = 0V

80

o

T A = -55 C

-I S, REVERSE DRAIN CURRENT (A)

VD S = -5V -I D , DRAIN CURRENT (A)

2.2

o

125 C

60 o

25 C 40

20

0

100 10 TA = 125o C

1

o

0.1

25 C

0.01

o

-55 C

0.001 0.0001

1

2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

FDD6637 Rev. C2(W)

5

0

0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V)

1.4

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature

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FDD6637 35V P-Channel PowerTrench MOSFET

Typical Characteristics

3200 I D = -14A

VDS = 10V

f = 1MHz VGS = 0 V

30V 8

CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

10

20V 6

4

2400 C iss

1600

C oss

800 2 C rss 0

0 0

10

20 30 Qg, GATE CHARGE (nC)

40

50

0

Figure 7. Gate Charge Characteristics

30

P(pk), PEAK TRANSIENT POWER (W)

100

100µs 1ms 10ms 100ms 1s

100

-I D , DRAIN CURRENT (A)

10 15 20 25 VD S, DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics

1000

R DS(ON) LIMIT

10 10s DC

1 VGS = -10V SINGLE PULSE o R θJA = 96 C/W

0.1

o

T A = 25 C

SINGLE PULSE Rθ JA = 96°C/W T A = 25°C

80

60

40

20

0 0.01

0.01 0

0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V)

0.1

100

1

10

100

1000

t1 , TIME (sec)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power Dissipation

100

1000 SINGLE PULSE Rθ JA = 96°C/W T A = 25°C

80

I (AS) , AVALANCHE CURRENT

I(pk), PEAK TRANSIENT CURRENT (A)

5

o

100

60

40

20

0 0.01

0.1

1

10

100

t1 , TIME (sec)

Figure 11. Single Pulse Maximum Peak Current

FDD6637 Rev. C2(W)

1000

TJ = 25 C

10

1 0.001

0.01

0.1

1

10

tA V, TIME IN AVANCHE(ms)

Figure 12. Unclamped Inductive Switching Capability

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FDD6637 35V P-Channel PowerTrench MOSFET

Typical Characteristics

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1 D = 0.5

Rθ JA(t) = r(t) * RθJA Rθ JA = 96 °C/W

0.2

0.1

0.1 0.05

P(pk) 0.02

0.01

t1

0.01

t2 T J - T A = P * Rθ JA (t) Duty Cycle, D = t1 / t 2

SINGLE PULSE

0.001 0.001

0.01

0.1

1

10

100

1000

t 1, TIME (sec)

Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6637 Rev. C2(W)

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FDD6637 35V P-Channel PowerTrench MOSFET

Typical Characteristics

L

VDS

BVDSS tP

VG

RGEN

DUT

VDD

VDD +

0V

VGS

VDS

IAS

-

tp

vary tP to obtain required peak IAS

IAS 0.01Ω

tAV Figure 14. Unclamped Inductive Load Test Circuit

Figure 15. Unclamped Inductive Waveforms

Drain Current Regulator Same type as DUT

+

10µF

QG

10V

50kΩ

10V

-

1µF

+

QGD

Q GS

VGS

VDD

VG DUT

Charge, (nC)

Ig(REF)

Figure 16. Gate Charge Test Circuit

VDS

RL

t ON

DUT

VDS

Pulse Width ≤ 1µs Duty Cycle ≤ 0.1%

Figure 18. Switching Time Test Circuit

tf

tr

10%

0V

90%

10% 90%

V GS 0V

td(OFF)

90%

VDD +

VGS

FDD6637 Rev. C2(W)

tOFF

t d(ON)

VGS RGEN

Figure 17. Gate Charge Waveform

50% 10%

50%

Pulse Width

Figure 19. Switching Time Waveforms

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FDD6637 35V P-Channel PowerTrench MOSFET

Test Circuits and Waveforms

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I20