Specific Protein Binding Sensor using SWNT (case 1)
Electrical Sensing of Biomolecules based Nanomaterials and Carbon Nanotubes
CNT w/ Protein
AFM image
Department of Chemistry Pohang University of Science and Technology Hee Cheul Choi
Star. A, et al. Nano. Lett. 2003, 3, 459
PEI & PEG
Protein Sensor using SWNT (case 2) Individual SWNT device
CE : Pt
RE : Ag/AgCl
PBS
A,B : #1 & #2 : p-type, #3 : metallic SWNT C : before D & E : after the introduction of the protein(cytochrome c) sol’n
Æ Protein adsorption does not change slop but VTh (200 μM)
Boussaad. S, et al. Chem.Comm. 2003, 1502.
P-type SWNT
Specific Protein Binding Sensor using SWNT (case 2)
Glucose Sensor using SWNT (GOx)
H2O2
O2 gluconic acid glucose
Linking molecule : pyrene group
AFM image
Besteman. K, et al. Nano. Lett. 2003, 3, 727 Chen. R, J, et al. PNAS. 2003, 100, 4984
Specific Protein Binding Sensor using SiNW biotin-modified SiNW
streptavidin
DNA Sensor using SiNW 1 : buffer 2 : 60 fM WT DNA →
G (nS)
1,3 : DNA free sol’n 2,4 : 100 fM MU DNA ↓ Modified SiNW
Modified SiNW ↑ 1, 3 : buffer
Unmodified SiNW (A) Yellow : sensor device Green : microfluidic channel (B) PNA(peptide nucleic acid) surface (C) PNA-DNA duplex
2 : 250 nM streptavidin
Hahm. J, et al. Nano. Lett. 2004, 4, 51
Cui. Y, et al. Science 2001, 293, 1289
1, 3 : buffer 2 : 3 μM m-antibiotin
1 : buffer 2 : bovine IgG 3 : 3 μM m-antibiotin
Static system
Flowing (buffer) system
Single Virus Sensor using SiNW Microfluidic Channel (100 virus particles per μl)
50 virus particles per μl
Influenza A virus
anti-influenza type A antibody anti-adenovirus group antibody Introduce 1: adenovirus 2 : influenza A 3 : buffer 4 : 1 : 1 mixed adenovirus & influenza A
anti-hemagglutinin for influenza A anti-adenovirus group Ⅲ
Single Virus Binding Selectivity
Patolsky. F, et al. PNAS. 2004, 101, 14017
Application 2 : DNA array detection
Resistance (ohms)
Part Ⅱ
Park. S, et al. Science 2002, 295, 1503
What applications carbon nanotubes will contribute?
Forms of Carbon
Electromagnetic Shield coating
Field emission devices
Diamond
Graphite
Ray Baughman, UT Dallas
C60
Carbon nanotube
Strong materials
Structure of carbon nanotubes
Representatives of carbon nanotubes
• Nanotubes consist of graphene sheets of carbon • Rolled into a cylinder
Multi-walled (MWNT)
Single-walled (SWNT)
• Some with multiple concentric cylinders Graphite
Sumino Iijima
Single-walled nanotube (SWNT)
Multi-walled nanotube (MWNT)
Richard Smalley
SWNTs are all C molecular wires and excellent quasi 1D systems for basic work (synthesis, materials science and physics) and potential applications
Diameter Control: Catalytic Nanoparticles Derived in Apoferritin Templates (d~1-3 nm)
How do SWNTs grow?
Nanotubes at various stages of growth
• Particle size ~ tube diameter • Catalytic particles (active end) remain on support • The other end is dome-closed • Base growth (differs from the VLS growth mode) Y. Li, et al.,J. Phys. Chem., 105, 11424, 2001
Diameter Control: Catalytic Nanoparticles Derived in Dendrimer Templates (d~1-2 nm)
Nanotubes Grown From Dendrimer Templated Nanoparticles
Fe(III)/G6OH PAMAM
G6OH PAMAM
Fe2O3 Nanoparticle on SiO2
Sorption of Fe(III)
CVD 1 mm
Fe2O3
Calcination Substrate
5 nm
CVD growth Substrate
250 nm 1.3 nm
10 nm Choi, H. C. et. al J. Phys. Chem. B 2002, 106, 12361.
• Diameters: 1-2 nm • (1-5 nm with conventional supported catalyst)
A Simple Approach to Monolayer Catalytic Nanoparticles: Clean Tube Films
NH2OH
Fe(III)
OH
OH
Applications
Iron oxide nanoparticle
• AFM tip for high resolution images and fabrication • Electrical devices • Electro-mechanical devices • Gas and biosensors
OH
Calcination SiO2
SiO2
500 nm
1 μm
250 nm
Choi, H. C. et al., Nano. Lett. 2003, 3, 157.
For better resolution
Nanotube at the apex of Si tip - Direct growth for SWNT - Glue attached for MWNT SWNT
MWNT Nature 398,761-762, 1999 PNAS 97, 3809-3813, 2000
Immunoglobin G (IgG) - consists of 4 polypeptide chains (Y-shpe) - Two antigen binding fragments (Fab) - One Fc site
J. Am. Chem. Soc. 120, 603-604 (1998)
Tube deflection and Conductance change
Deflection and corresponding conductance changes: “reversible”
Carbon nanotube based Field Effect Transistors (SWNT-FETs) Ti/Au SWNT
HP4156 Semiconductor Analyzer
Vg
Vd
Vs
P-type silicon wafer 500 nm - 2 mm SiO2
10 mm 1 mm
Integrated Nanoelectronics: Nanotube Transistor Arrays with Local W/ SiO2 gates
I-Vg characteristics of SWNT-FETs
VSD
Mo
iSD -+ -+ -+ -+ -+
SiO2
30
W S
25
+-Vg Vg
I(nA)
W gate
Si
20
50 µm
500 µm
D
15 10 5 Applied bias = 10 mV
0 -10
-5
0
5
10
¾ Derived by patterned growth of nanotube arrays ¾ Percentage of semiconducting tubes: ~ 70% by CVD ¾ High yield of transistors ¾ Ability in obtaining p- and n- arrays on same chip for Complementary Devices
Vg(V)
Nanotube Ring Oscillators & Logic Gates
Vout (volts)
-2.5
Vout p
n
-1.5
p
n
-1.0
p
n
-2.0
VDD
• Orders of magnitude conductance response
-0.5 0
10
20
30
Time (ms)
0,0
-1.0
0,1
1,1
• Room temperature
Vout
-1.5 Vout (volts)
Nanotube Chemical Sensors
p
n
p
n
• NO2: near chemisorption
1,0
p
• NH3: physisorption
A
-0.5
n
AND gate
B
0.0 0
20
40 Time (s)
60
VDD
80
Javey et al. Nano Lett., 2002
Science, 287, 622, 2000
Nanotube sensor array with 100% yield
H2 sensing with SWNT/Pd single device
4μm
300μm
3.0 I(μΑ)
~ 5 Å Pd
2.5 2.0
40μm
1.5 -10
0 Vg (V)
10
• Grow multiple tubes for each device in a large array • Semiconducting tubes dominant (70%) • Excellent electrostatic gating and chemical gating sensitivity J. Kong et. al., Adv. Mater. 13, 1384, 2001
Multiplex-functionalized sensor array capable of detecting multiple molecules in a gas mixture
100ppt
0.0 -ΔG/G0
4.0
I(μΑ)
3.5 3.0
0.1
• NO2 sensing: Down to 100 ppt sensitivity • Sticking coefficient PEI/tube ~ 0.3 No PEI/tube ~0.001
200 500 1ppb
0.2 0.3
2
0.4
2.5
8
Nafion coated 7 6
0.5 0
-10
PEI coated
I(μΑ)
Enhanced sensitivity of NO2 detection for polymer (PEI) coated n-type devices
• Large sensor arrays obtained (100% yield, low noise)
0 Vg (V)
10
2000 4000 6000 8000 t(s)
Enhanced selectivity as well: No response to NH3, CO, CO2, H2, CH4, O2
-ΔG/G0
I-Vg of n-type device
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1 0.0 0
-10 -20 Vg (V)
PEI coated
5 4
[NO2](ppb) 2 4 6 8 10
0.0
NH3 NH3 100ppm 500ppm
NO2 1ppm
3
Nafion coated • Micro-spotting used for coating different devices with different polymers
2 0
400 800 1200 1600 t(s)
P. Qi, et al, Nano Lett. 3, 347, 2003
CNT-FET device for biosensor applications
CNT-FET as a smart sensor
-Teflon based electrochemical cellCounter electrode (Pt) Reference electrode (Ag/AgCl)
Conventional CNT-FET 200 μm
- Change of IDS by the effect of VGS - VGS by electric field
Bias (V)
5 μm
CNT-Chemical Effect Transistor (CET) - Change of IDS NOT by the effect of VGS - Why not by chemical effects? * Charge transfer from molecules to CNT
50 μm
Hydrophobic/vdW anchoring of Tween20/PEG
Non-specific interaction of SWNT with proteins
50
A repelled OH HO
200 nm
(B
QCM Signal Δ F (Hz)
1 nM 10 nM
0
O O
Streptavidin, Protein A, Glucosidase, Bovine Serum Albumin, IgG…
O
OH HO
x
O O O
Turns out to be generic:
50 .1 nM
Ow O
x
O O O
yOH
O O
z
Ow O
O
yOH
z
0
100 nM SA
50
QCM Δ F(Hz)
Δ F (Hz)
SA
100 nM BSA
100 nM SpA
rinse
QCM Signal
(A
-50
.05% Tween 20
0 -50
-100
-100
rinses
-150 -200
-150
0
4
8
t/10
12
3
16
C
(s)
-200 0
1
2
3
4
5
3
100 nm
100 nM
B
1 μM Streptavidin
-50
t /10 (s) 200 nm
rinses
I
II
III
Non-covalent irreversible adsorption Water solubility, highly stable
-100
Protein resistant Tween 20 & Pluronic block copolymer P103 are the best
-150
C E
-200 0
2
4
6
8 3
t/10 (s)
10
12
14
16
Chen et al, PNAS 2003, 100, 4984
Selective electronic biosensor
Origin of the conductance change Where does the conductance change come from? • Nanotube aspects: – Charge injection from biomolecules – Electric double layer field modulation caused by biomolecules • Metal-nanotube contact aspect: – Adsorbed chemical species may modulate work function level of contact metals, which consequently change the Schottky barrier height resulting in the conductance change.
Nanotube vs. metal-nanotube contact
PMMA SWNT
BSA
SiO2/Si Pd/Au evaporation
Both photolithography and electron-beam lithography can be used
.02x10 SiO2/Si
HIgG .50x10
-6
Ids (μΑ)
3.00
mPEG-SH SAM
Ids (μΑ)
CNT-FET device fabrication
2.98
s
100 nM
2.96
s s s s ss ss s ss s SiO2/Si
Lift off then Tween 20
2.94 0
Lift off
.40x10 ss
ss
SiO2/Si
SiO2/Si
S
S
S
HO
Device II
O O
800 Time (s)
1200
-6
100 nM
3.30
Ow O
x
O O O
S 11
Device I
.50x10
100 nM
-6
400
3.45
SiO2/Si OMe OMe O O n n
1.44 0
1200
Device I Metal-nanotube
100 nM
1.46
ss
OH
OMe OMe O O n n
800 Time (s)
Ids (μΑ)
ss
400
1.48
Ids (μΑ)
Lift off
-6
O
yOH
Device II Nanotube only
3.40 3.35
3.20
z
Device III
Chen, Choi et al J. Am. Chem. Soc. 2004, 126, 1563
0
400 800 Time (s)
1200
3.30 0
200
400 600 Time (s)
800
1000
Nanotube vs. metal-nanotube contact hCG
HSA .65x10
.50x10
Summary of biomolecule sensing mechanism
-6
-6
100 nM
1. hCG NSB
Pd or Au
Ids (μΑ)
Ids (μΑ)
2.60 2.40 100 nM
3.5x10
2.55
400
800 Time (s)
2.45 0
1200
-6
.50x10
100 nM
1. mPEG-SH on Pd or Au
400
800 Time (s)
1200
Ids (μΑ)
Device II Nanotube only
400 Time (s)
600
800
Device II
3.20 0
G
Effective functionalization of metal surface with appropriate chemical species will lead high sensitive and selective nanotube-biosensor.
3.25 200
Time (s)
S
Pd or Au
2. hCG NSB
3.30
3.1
S
Conductance (G) Measurement
100 nM
3.35
3.2
S
G
Time (s)
3.40
3.3
OMe OMe OMe O O O n n n
-6
3.45 3.4 Ids (μΑ)
SiO2/Si SWNT-FET
2.50
2.30 0
Device I
Device I Metal-nanotube
400
800 Time (s)
1200
Application 1 : DNA-templated CNT-FET
DNA and Protein Sensor using GC/CNTs (case 3)
DNA-templated CNT FET & metallic wires contacting it
Chronopotentiometric signals
glassy carbon electrode (GC)
CNT
DNA
protein
SEM image
A (DNA) : 10 pg/mL target oligonucleotide B (protein) : 80 pg/mL IgG (a) single ALP tag (b) CNT-multiple ALP tags (c) CNT-ALP tags modified GC electrode 50 μL α–naphthyl PBS sol’n(50 mM) w/ enzymatic rxn Keren. K, et al. Science. 2003, 302, 1380
Magnetic beads-DNA-CNT + 10 pg/mL target sample
Wang. J, et al. J. Am. Chem. Soc. 2004, 126, 3010.