PESD2CAN CAN bus ESD protection diode Rev. 01 — 22 December 2006

Product data sheet

1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients.

1.2 Features n Due to the integrated diode structure only one small SOT23 package is needed to protect two CAN bus lines n Max. peak pulse power: PPP = 230 W at tp = 8/20 µs n Low clamping voltage: VCL = 41 V at IPP = 5 A n Ultra low leakage current: IRM < 1 nA n ESD protection up to 30 kV n IEC 61000-4-2, level 4 (ESD) n IEC 61000-4-5 (surge); IPP = 5 A at tp = 8/20 µs n Small SMD plastic package

1.3 Applications n CAN bus protection n Automotive applications

1.4 Quick reference data Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

-

-

24

V

-

25

30

pF

Per diode VRWM

reverse standoff voltage

Cd

diode capacitance

f = 1 MHz; VR = 0 V

PESD2CAN

NXP Semiconductors

CAN bus ESD protection diode

2. Pinning information Table 2.

Pinning

Pin

Description

1

cathode 1

2

cathode 2

3

common cathode

Simplified outline

Symbol

3

1

1

2

3

2 006aaa155

3. Ordering information Table 3.

Ordering information

Type number PESD2CAN

Package Name

Description

Version

-

plastic surface-mounted package; 3 leads

SOT23

4. Marking Table 4.

Marking codes

Type number

Marking code[1]

PESD2CAN

6R*

[1]

* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol

Parameter

Conditions

peak pulse power

tp = 8/20 µs

peak pulse current

tp = 8/20 µs

Min

Max

Unit

[1][2]

-

230

W

[1][2]

-

5

A

Per diode PPP IPP Per device Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

[1]

Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1 to 3 or 2 to 3.

PESD2CAN_1

Product data sheet

© NXP B.V. 2006. All rights reserved.

Rev. 01 — 22 December 2006

2 of 11

PESD2CAN

NXP Semiconductors

CAN bus ESD protection diode

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

electrostatic discharge voltage

IEC 61000-4-2 (contact discharge)

Min

Max

Unit

[1][2]

-

30

kV

[2]

-

400

V

[1][2]

-

16

kV

Per diode VESD

machine model MIL-STD-883 (human body model) [1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1 to 3 or 2 to 3.

Table 7.

ESD standards compliance

Standard

Conditions

Per diode IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV

001aaa631 001aaa630

120

IPP 100 % 90 %

100 % IPP; 8 µs

IPP (%) 80

e−t 50 % IPP; 20 µs

40

10 % t

tr = 0.7 ns to 1 ns

0 0

10

20

30

30 ns

40 t (µs)

60 ns

Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5

Fig 2. ESD pulse waveform according to IEC 61000-4-2

PESD2CAN_1

Product data sheet

© NXP B.V. 2006. All rights reserved.

Rev. 01 — 22 December 2006

3 of 11

PESD2CAN

NXP Semiconductors

CAN bus ESD protection diode

6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode VRWM

reverse standoff voltage

-

-

24

V

IRM

reverse leakage current

VRWM = 24 V

-